Surface-Originated Weak Confinement in Tetrahedral Indium Arsenide Quantum Dots.

While the shape-dependent quantum confinement (QC) effect in anisotropic semiconductor nanocrystals has been extensively studied, the QC in facet-specified polyhedral quantum dots (QDs) remains underexplored. Recently, tetrahedral nanocrystals have gained prominence in III-V nanocrystal synthesis. In our study, we successfully synthesized well-faceted tetrahedral InAs QDs with a first excitonic absorption extending up to 1700 nm. We observed an unconventional sizing curve, indicating weaker confinement than for equivalently volumed spherical QDs. The (111) surface states of InAs QDs persist at the conduction band minimum state even after ligand passivation with a significantly reduced band gap, which places tetrahedral QDs at lower energies in the sizing curve. Consequently, films composed of tetrahedral QDs demonstrate an extended photoresponse into the short-wave infrared region, compared to isovolume spherical QD films.

P- and N-type InAs nanocrystals with innately controlled semiconductor polarity.

InAs semiconductor nanocrystals (NCs) exhibit intriguing electrical/optoelectronic properties suitable for next-generation electronic devices. Although there is a need for both n- and p-type semiconductors in such devices, InAs NCs typically exhibit only n-type characteristics. Here, we report InAs NCs with controlled semiconductor polarity. Both p- and n-type InAs NCs can be achieved from the same indium chloride and aminoarsine precursors but by using two different reducing agents, diethylzinc for p-type and diisobutylaluminum hydride for n-type NCs, respectively. This is the first instance of semiconductor polarity control achieved at the synthesis level for InAs NCs and the entire semiconductor nanocrystal systems. Comparable field-effective mobilities for holes (3.3 × 10-3 cm2/V·s) and electrons (3.9 × 10-3 cm2/V·s) are achieved from the respective NC films. The mobility values allow the successful fabrication of complementary logic circuits, including NOT, NOR, and NAND comprising photopatterned p- and n-channels based on InAs NCs.

One-Step Passivation of Both Sulfur Vacancies and SiO2 Interface Traps of MoS2 Device.

Transition metal dichalcogenides (TMDs) benefit electrical devices with spin-orbit coupling and valley- and topology-related properties. However, TMD-based devices suffer from traps arising from defect sites inside the channel and the gate oxide interface. Deactivating them requires independent treatments, because the origins are dissimilar. This study introduces a single treatment to passivate defects in a multilayer MoS2 FET. By applying back-gate bias, protons from an H-TFSI droplet are injected into the MoS2, penetrating deeply enough to reach the SiO2 gate oxide. The characterizations employing low-temperature transport and deep-level transient spectroscopy (DLTS) studies reveal that the trap density of S vacancies in MoS2 drops to the lowest detection level. The temperature-dependent mobility plot on the SiO2 substrate resembles that of the h-BN substrate, implying that dangling bonds in SiO2 are passivated. The carrier mobility on the SiO2 substrate is enhanced by approximately 2200% after the injection.

Boosting internal quantum efficiency via ultrafast triplet transfer to 2H-MoTe2 film.

Organic systems often allow to create two triplet spin states (triplet excitons) by converting an initially excited singlet spin state (a singlet exciton). An ideally designed organic/inorganic heterostructure could reach the photovoltaic energy harvest over the Shockley-Queisser (S-Q) limit because of the efficient conversion of triplet excitons into charge carriers. Here, we demonstrate the molybdenum ditelluride (MoTe2)/pentacene heterostructure to boost the carrier density via efficient triplet transfer from pentacene to MoTe2 using ultrafast transient absorption spectroscopy. We observe carrier multiplication by nearly four times by doubling carriers in MoTe2 via the inverse Auger process and subsequently doubling carriers via triplet extraction from pentacene. We also verify efficient energy conversion by doubling the photocurrent in the MoTe2/pentacene film. This puts a step forward to enhancing photovoltaic conversion efficiency beyond the S-Q limit in the organic/inorganic heterostructures.

Semiconductor Nanocrystals: Unveiling the Chemistry behind Different Facets.

ConspectusDeveloping next-generation colloidal semiconductor nanocrystals with high-quality optoelectronic properties and precise processability relies on achieving complete mastery over the surface characteristics of nanocrystals (NCs). This requires precise engineering of the ligand-NC surface interactions, which poses a challenge due to the complex reactivity of the multiple binding sites across the entire surface. Accordingly, recent progress has been made by strategically combining well-defined surface models with quantitative surface reactions to advance our understanding and manipulation of NC surface chemistry. Our lab has contributed to this progress by developing a size-dependent shape model of IV-VI NCs, gaining insights into their unique facet-specific chemistry, and developing a systematic ligand modification strategy for target applications. Furthermore, we have created well-defined facets in III-V NCs via a co-passivation strategy, addressing the previously lacking specific shapes.This Account is divided into three parts. First, we discuss the complexities involved in comprehensively understanding the nanocrystal surface structure at the atomistic level. We explain why we focused on well-defined NCs with a large exciton Bohr radius to explore facets, an essential aspect of surface heterogeneity across the entire NC. Second, we present our work on one of the most studied nanocrystals, IV-VI materials, and how facet-specific surface chemistry has led to a meaningful understanding and control of the NC's surface. We discovered a size-dependent facet distribution in IV-VI NCs and suggested facet-specific surface chemistry to improve the photophysical properties of NCs. We further modulate the electronic properties of NC assemblies for efficient optoelectronic applications. Third, we describe our recent success in achieving well-defined facets and their facet-specific chemistry in III-V NCs, which have yet to be explored as much as classical II-VI or IV-VI materials. We explain how controlling the surfaces in III-V NCs has been challenging. We present a precise growth platform for the geometric modulation of NCs, which can be further explored for shape-dependent exciton behavior and surface reactivities.Taken together, we present a compelling case for utilizing facet-specific chemistry as a platform for mechanistic investigation and morphology exploration, which can pave the way for developing high-quality and precisely designed NCs for optoelectronic technologies, unlocking new multidisciplinary applications.

Fabrication of junction-free Cu nanowire networks via Ru-catalyzed electroless deposition and their application to transparent conducting electrodes.

Over the past few years, metal nanowire networks have attracted attention as an alternative to transparent conducting oxide materials such as indium tin oxide for transparent conducting electrode applications. Recently, electrodeposition of metal on nanoscale template is widely used for formation of metal network. In the present work, junctionless Cu nanowire networks were simply fabricated on a substrate by forming a nanostructured Ru with 80 nm width as a seed layer, followed by direct electroless deposition of Cu. By controlling the density of Ru nanowires or the electroless deposition time, we readily achieve desired transmittance and sheet resistance values ranging from ∼1 kΩ sq-1at 99% to 9 Ω sq-1at 89%. After being transferred to flexible substrates, the nanowire networks exhibited no obvious increase in resistance during 8000 cycles of a bending test to a radius of 2.5 mm. The durability was verified by evaluation of its heating performance. The maximum temperature was greater than 180 °C at 3 V and remained constant after three repeated cycles and for 10 min. Transmission electron microscopy and x-ray diffraction studies revealed that the adhesion between the electrolessly deposited Cu and the seed Ru nanowires strongly influenced the durability of the core-shell structured nanowire-based heaters.

Uncovering the Role of Countercations in Ligand Exchange of WSe2: Tuning the d-Band Center toward Improved Hydrogen Desorption.

The role of countercations that do not bind to core nanocrystals (NCs) but rather ensure charge balance on ligand-exchanged NC surfaces has been rarely studied and even neglected. Such a scenario is unfortunate, as an understanding of surface chemistry has emerged as a key factor in overcoming colloidal NC limitations as catalysts. In this work, we report on the unprecedented role of countercations in ligand exchange for a colloidal transition metal dichalcogenide (TMD), WSe2, to tune the d-band center toward the Fermi level for enhanced hydrogen desorption. Conventional long-chain organic ligands, oleylamine, of WSe2 NCs are exchanged with short atomic S2- ligands having countercations to preserve the charge balance (WSe2/S2-/M+, M = Li, Na, K). Upon exchange with S2- ligands, the charge-balancing countercations are intercalated between WSe2 layers, thereby serving a unique function as an electrochemical hydrogen evolution reaction (HER) catalyst. The HER activity of ligand-exchanged colloidal WSe2 NCs shows a decrease in overpotential by down-shift of d-band center to induce more electron-filling in antibonding orbital and an increase in the electrochemical active surface area (ECSA). Exchanging surface functionalities with S2- anionic ligands enhances HER kinetics, while the existence of intercalated countercations improves charge transfer with the electrolyte. The obtained results suggest that both anionic ligands and countercationic species in ligand exchange must be considered to enhance the overall catalytic activity of colloidal TMDs.

Porosity-Engineering of MXene as a Support Material for a Highly Efficient Electrocatalyst toward Overall Water Splitting.

The use of 2 D transition metal carbide MXenes as support materials to incorporate catalytically active compounds is of interest because of their unique properties. However, the preparation of well-dispersed catalytic phases on the inter-connected porous MXene network is challenging and has been rarely explored. This work focuses on the synthesis of basal-plane-porous titanium carbide MXene (ac-Ti3 C2 ) that is used subsequently as an effective host for the incorporation of a known catalytically active phase (IrCo) as an effective bifunctional electrocatalyst toward water splitting. The porous ac-Ti3 C2 with abundant macro/meso/micropores is prepared by a wet chemical method at room temperature and provides ideal anchor sites for intimate chemical bonding with alien compounds. The resulting IrCo@ac-Ti3 C2 electrocatalyst exhibits an excellent reactivity (220 mV at 10 mA cm-2 ) towards the oxygen evolution reaction in 1.0 m KOH, which surpasses that of the benchmark RuO2 , a low voltage cell of 1.57 V (@ 10 mA cm-2 ) and good long-term durability. Our work demonstrates the effectiveness of porosity engineering in MXene nanosheets as a support material to shorten ion migration pathways, to increase electrolyte accessibility between inter-sheets and to overcome inherited re-stacking and aggregation issues.

Highly Efficient Thin-Film Transistor via Cross-Linking of 1T Edge Functional 2H Molybdenum Disulfides.

Thin-film transistors (TFTs) have received great attention for their use in lightweight, large area, and wearable devices. However, low crystalline materials and inhomogeneous film formation limit the realization of high-quality electrical properties for channels in commercial TFTs, especially for flexible electronics. Here, we report a field-effect TFT fabricated via cross-linking of edge-1T basal-2H MoS2 sheets that are prepared by edge functional exfoliation of bulk MoS2 with soft organic exfoliation reagents. For edge functional exfoliation, the electrophilic 4-carboxy-benzenediazonium used as the soft organic reagent attacks the nucleophilic thiolates exposed at the edge of the bulk MoS2 with the help of an amine catalyst, resulting in 1T edge-functional HOOC-benzene-2H basal MoS2 nanosheets (e-MoS2). The cross-linking via hydrogen bonding of the negatively charged HOOC of the e-MoS2 sheets with the help of a cationic polymer, polydiallyldimethylammonium chloride, results in a good film formation for a channel of the solution processing TFT. The TFT exhibits an extremely high mobility of 170 cm2/(V s) at 1 V (on/off ratio of 106) on SiO2/Si substrate and also a high mobility of 36.34 cm2/(V s) (on/off ratio of 103) on PDMS/PET substrate.

A molecular approach to an electrocatalytic hydrogen evolution reaction on single-layer graphene.

A major challenge in the development of electrocatalysts is to determine a detailed catalysis mechanism on a molecular level for enhancing catalytic activity. Here, we present bottom-up studies for an electrocatalytic hydrogen evolution reaction (HER) process through molecular activation to systematically control surface catalytic activity corresponding to an interfacial charge transfer in a porphyrin monolayer on inactive graphene. The two-dimensional (2D) assembly of porphyrins that create homogeneous active sites (e.g., electronegative tetrapyrroles (N4)) on graphene showed structural stability against electrocatalytic reactions and enhanced charge transfer at the graphene-liquid interface. Performance operations of the graphene field effect transistor (FET) were an effective method to analyse the interfacial charge transfer process associated with information about the chemical nature of the catalytic components. Electronegative pristine porphyrin or Pt-porphyrin networks, where intermolecular hydrogen bonding functioned, showed larger interfacial charge transfers and higher HER performance than Ni-, or Zn-porphyrin. A process to create surface electronegativity by either central N4 or metal (M)-N4 played an important role in the electrocatalytic reaction. These findings will contribute to an in-depth understanding at the molecular level for the synergetic effects of molecular structures on the active sites of electrocatalysts toward HER.

Flexible and Stretchable Optoelectronic Devices using Silver Nanowires and Graphene.

Many studies have accompanied the emergence of a great interest in flexible or/and stretchable devices for new applications in wearable and futuristic technology, including human-interface devices, robotic skin, and biometric devices, and in optoelectronic devices. Especially, new nanodimensional materials enable flexibility or stretchability to be brought based on their dimensionality. Here, the emerging field of flexible devices is briefly introduced using silver nanowires and graphene, which are famous nanomaterials for the use of transparent conductive electrodes, as examples, and their unique functions originating from the intrinsic property of these nanomaterials are highlighted. It is thought that this work will evoke more interest and idea exchanges in this emerging field and hopefully can trigger a breakthrough on a new type of optoelectronics and optogenetic devices in the near future.

Moving beyond flexible to stretchable conductive electrodes using metal nanowires and graphenes.

Stretchable and/or flexible electrodes and their associated electronic devices have attracted great interest because of their possible applications in high-end technologies such as lightweight, large area, wearable, and biointegrated devices. In particular, metal nanowires and graphene derivatives are chosen for electrodes because they show low resistance and high mechanical stability. Here, we review stretchable and flexible soft electrodes by discussing in depth the intrinsic properties of metal NWs and graphenes that are driven by their dimensionality. We investigate these properties with respect to electronics, optics, and mechanics from a chemistry perspective and discuss currently unsolved issues, such as how to maintain high conductivity and simultaneous high mechanical stability. Possible applications of stretchable and/or flexible electrodes using these nanodimensional materials are summarized at the end of this review.

High mechanical and tribological stability of an elastic ultrathin overcoating layer for flexible silver nanowire films.

A novel, nanoscale, thickness-controlled, elastic graphene oxide-polydiallyldimethylammonium chloride (GO-PDDA) film using a layer-by-layer technique on silver nanowires and a flexible substrate is reported. Micro- and nanoscale wear and flexibility depending on the thickness and/or elastic nature of the overcoating layer demonstrate high mechanical stability with the PDDA inserted overcoating layer.

Inhibition of adenylyl cyclase type 5 prevents L-DOPA-induced dyskinesia in an animal model of Parkinson's disease.

The dopamine precursor L-3,4-dihydroxyphenylalanine (L-DOPA) is widely used as a therapeutic choice for the treatment of patients with Parkinson's disease. However, the long-term use of L-DOPA leads to the development of debilitating involuntary movements, called L-DOPA-induced dyskinesia (LID). The cAMP/protein kinase A (PKA) signaling in the striatum is known to play a role in LID. However, from among the nine known adenylyl cyclases (ACs) present in the striatum, the AC that mediates LID remains unknown. To address this issue, we prepared an animal model with unilateral 6-hydroxydopamine lesions in the substantia nigra in wild-type and AC5-knock-out (KO) mice, and examined behavioral responses to short-term or long-term treatment with L-DOPA. Compared with the behavioral responses of wild-type mice, LID was profoundly reduced in AC5-KO mice. The behavioral protection of long-term treatment with L-DOPA in AC5-KO mice was preceded by a decrease in the phosphorylation levels of PKA substrates ERK (extracellular signal-regulated kinase) 1/2, MSK1 (mitogen- and stress-activated protein kinase 1), and histone H3, levels of which were all increased in the lesioned striatum of wild-type mice. Consistently, FosB/ΔFosB expression, which was induced by long-term L-DOPA treatment in the lesioned striatum, was also decreased in AC5-KO mice. Moreover, suppression of AC5 in the dorsal striatum with lentivirus-shRNA-AC5 was sufficient to attenuate LID, suggesting that the AC5-regulated signaling cascade in the striatum mediates LID. These results identify the AC5/cAMP system in the dorsal striatum as a therapeutic target for the treatment of LID in patients with Parkinson's disease.

Antioxidant activities and determination of phenolic compounds isolated from oriental plums (Soldam, Oishiwase and Formosa).

The purposes of this study were to determine phenolic compounds and to evaluate antioxidant activities of plums (Soldam, Oishiwase and Formosa). Soldam contains the highest amount of total phenolics among cultivars (Formosa: 4.0%, Oishiwase: 3.3%, Soldam: 6.4% for total phenolic) as well as the total flavonoids of which constituents were mainly myricetin and anthocyanidin. The antioxidant activities were measured by DPPH, ABTS radical scavenging, and SOD-like activities. The DPPH radical scavenging activity of Korean plum extracts (200 µg/mL) showed more than 43%, and the Soldam turned out to be the highest : ID(50) value: 160-177 µg/mL for Formosa and Oishiwase; 58-64 µg/mL for Soldam. The ABTS radical scavenging activity of Korean plum extracts (200 µg/mL) was found to be more than 50%. The SOD-like activity of Korean plum extracts (200 µg/mL) showed more than 70%. Among three kinds of cultivars, Soldam had the highest antioxidant activity. The nitrite scavenging activity of Soldam was 61.5%, which is the highest, compared with that of the other cultivars, about 50%. From these results, Korean plums turned out to be phytochemical rich fruit as well as to show high antioxidant activities.

Gamma-irradiation improves the color and antioxidant properties of Chaga mushroom (Inonotus obliquus) extract.

The objective of this study was to evaluate the effect of ionizing radiation on color and antioxidative properties of Chaga mushroom (Inonotus obliquus) extract (CME). CME (10 mg/mL) was gamma-irradiated at 0, 3, 5, 7, and 10 kGy, and color, antioxidant activity, and total phenolic compound levels were then determined. The lightness and yellowness were increased (P < .05), and the redness was decreased (P < .05), as irradiation dose increased. The antioxidant parameters such as the 2-diphenyl-1-picrylhydrazyl, superoxide, and hydroxyl radical scavenging activities, ferric reducing/antioxidant power, and inhibition of lipid peroxidation increased as the irradiation dose increased. Also, the total phenolic compound levels of CME were increased (P < .05) by gamma-irradiation. These results suggest that gamma-irradiation could be considered a means for improving the antioxidant properties and the color of CME.

Change of an egg allergen in a white layer cake containing gamma-irradiated egg white.

This study was conducted to evaluate the reduction of an egg allergen in a cake containing gamma-irradiated egg white. A white layer cake was manufactured by a commercial formula with 10- or 20-kGy-irradiated egg white. Enzyme-linked immunosorbent assays (ELISAs) with immunoglobulin (Ig) E from egg-allergic patients and with rabbit anti-ovalbumin IgG were used to identify and quantify ovalbumin (OVA) in the samples. Concentrations of native OVA detected by IgE and IgG in the control were 432.88 and 375.46 microg/g sample, respectively. However, native OVA in samples with 10- and 20-kGy-irradiated egg white was detected at low concentrations (14.27 and 8.78 microg/g, respectively) by IgE (P < 0.05); IgG recognized OVA more often in 10- and 20-kGy samples than in controls. Conformational cleavage of OVA by irradiation could explain the IgG result. The results appear to suggest that irradiating egg white might reduce its allergenicity, which could be used in the production of baked goods of reduced allergenicity.