High-speed interband cascade infrared photodetectors: photo-response saturation by a femtosecond oscillator.

Interband cascade infrared photodetectors (ICIPs) combine interband optical transitions with fast intraband transport to achieve high-frequency and broad-wavelength operation at room temperature. Here we study the bias-dependent electronic impulse response of ICIPs with a mid-infrared synchronously pumped optical parametric oscillator (OPO). Since the OPO produces ultrashort 104-fs pulses, it is possible to probe the impulse response of the ICIP. From this impulse response, we identify two characteristic decay times, indicating the contribution of electron as well as hole carriers. A reverse bias voltage applied to the ICIP reduces both time scales and leads to an increased electrical cut-off frequency. The OPO emits up to 500 mW average power, of which up to 10 mW is directed to the ICIP in order to test its saturation characteristics under short-pulse illumination. The peak of the impulse response profile as well as the average photocurrent experience a gradual saturation behavior, and we determine the corresponding saturation powers by measuring the photo-response as a function of average power directed to the ICIP. We demonstrate that an increasing reverse bias increases the saturation power as well as the responsivity of the ICIP.

Excitable phase slips in an injection-locked single-mode quantum-dot laser.

An experimental study of the dynamics of a single-mode quantum-dot semiconductor laser undergoing optical injection is described for the first time, to our knowledge. In particular, the first observation of excitable pulses near the locking boundaries for both positive and negative detuning is reported, indicating locking via a saddle-node bifurcation for both signs of the detuning. The phase evolution of the slave electric-field during pulsing was measured and confirmed that the pulses result from 2pi phase slips. The interpulse-time statistics were analyzed, and a Kramers-like distribution was obtained.

Widely tunable laterally coupled distributed feedback laser diodes for multispecies gas analysis based on InAs/InGaAs quantum-dash material.

Applying the concept of binary superimposed gratings, widely tunable single-mode laser diodes suitable for multispecies gas detection in the 1.8 microm wavelength range could be manufactured on InAs/InGaAs quantum dash-in-a-well material. A discrete wavelength tuning range of 21 nm as well as continuous tuning over 0.8 nm are demonstrated. Water and hydrogen chloride could be detected at absorption lines 13 nm apart.

1.3 microm quantum dot laser in coupled-cavity-injection-grating design with bandwidth of 20 GHz under direct modulation.

Using a multi section laser in coupled cavity injection grating design based on 1.3 microm InGaAs/GaAs quantum dot (QD) active region we were able to enhance the 3 dB modulation bandwidth well beyond the inherent material modulation bandwidth. The material bandwidth was determined by measurements on distributed feedback (DFB) devices to approximately 8 GHz. The special multisectional design allows interaction between the lasing mode and a second mode used as catalyst and enables a high resonance frequency of the device. Based on active QD material this approach allowed us to reach a cut off frequency of 20 GHz in the small signal response of the device.

1240nm high-power GaInNAs laser diodes.

We have fabricated 1240nm GaInNAs high-power semi-conductor laser diodes. In pulsed operation 1000 mum x 100 mum laser diodes show record low threshold current densities of 174 Acm(-2). Continuous wave output powers exceeding 4.6 Watts at room temperature and 6.2 Watts at a heatsink temperature of -5 degrees C are obtained from 1300 mum x 200 mum devices. The maximum wallplug efficiency of the device exceeds 40 % and the internal quantum efficiency reaches 0.89. Preliminary lifetime tests were performed for about 1000 h and show stable high-power operation.

DFB laser diodes in the wavelength range from 760 nm to 2.5 microm.

We present a novel device technology to produce DFB laser diodes which are suitable for tunable diode laser spectroscopy. The new technological approach employs lateral metal distributed feedback (DFB) gratings in close proximity to the laser ridge which results in single mode emission with high spectral purity and output powers as required for most spectroscopic applications. Over the entire wavelength range from the visible (760 nm) up to the near-infrared (2.5 microm) single mode emission can be obtained for devices based on different semiconductor systems such as GaAs, InP and GaSb. Typical side mode suppression ratios are better than 35 dB for cw-room temperature operation and narrow linewidths ensure high spectroscopic resolution.