Optical Monitoring of the Magnetization Switching of Single Synthetic-Antiferromagnetic Nanoplatelets with Perpendicular Magnetic Anisotropy.

Synthetic antiferromagnetic nanoplatelets (NPs) with a large perpendicular magnetic anisotropy (SAF-PMA NPs) have a large potential in future local mechanical torque-transfer applications for e.g., biomedicine. However, the mechanisms of magnetization switching of these structures at the nanoscale are not well understood. Here, we have used a simple and relatively fast single-particle optical technique that goes beyond the diffraction limit to measure photothermal magnetic circular dichroism (PT MCD). This allows us to study the magnetization switching as a function of applied magnetic field of single 122 nm diameter SAF-PMA NPs with a thickness of 15 nm. We extract and discuss the differences between the switching field distributions of large ensembles of NPs and of single NPs. In particular, single-particle PT MCD allows us to address the spatial and temporal heterogeneity of the magnetic switching fields of the NPs at the single-particle level. We expect this new insight to help understand better the dynamic torque transfer, e.g., in biomedical and microfluidic applications.

Spin-polarized hot electron transport versus spin pumping mediated by local heating.

A 'toy model'-aimed at capturing the essential physics-is presented that jointly describes spin-polarized hot electron transport and spin pumping driven by local heating. These two processes both contribute to spin-current generation in laser-excited magnetic heterostructures. The model is used to compare the two contributions directly. The spin-polarized hot electron current is modeled as one generation of hot electrons with a spin-dependent excitation and relaxation scheme. Upon decay, the excess energy of the hot electrons is transferred to a thermalized electron bath. The elevated electron temperature leads to an increased rate of electron-magnon scattering processes and yields a local accumulation of spin. This process is dubbed as spin pumping by local heating. The built-up spin accumulation is effectively driven out of the ferromagnetic system by (interfacial) electron transport. Within our model, the injected spin current is dominated by the contribution resulting from spin pumping, while the hot electron spin current remains relatively small. We derive that this observation is related to the ratio between the Fermi temperature and Curie temperature, and we show what other fundamental parameters play a role.

Integrating all-optical switching with spintronics.

All-optical switching (AOS) of magnetic materials describes the reversal of the magnetization using short (femtosecond) laser pulses, and received extensive attention in the past decade due to its high potential for fast and energy-efficient data writing in future spintronic memory applications. Unfortunately, the AOS mechanism in the ferromagnetic multilayers commonly used in spintronics needs multiple pulses for the magnetization reversal, losing its speed and energy efficiency. Here, we experimentally demonstrate on-the-fly single-pulse AOS in combination with spin Hall effect (SHE) driven motion of magnetic domains in Pt/Co/Gd synthetic-ferrimagnetic racetracks. Moreover, using field-driven-SHE-assisted domain wall (DW) motion measurements, both the SHE efficiency in the racetrack is determined and the chirality of the optically written DW's is verified. Our experiments demonstrate that Pt/Co/Gd racetracks facilitate both single-pulse AOS as well as efficient SHE-induced domain wall motion, which might ultimately pave the way towards integrated photonic memory devices.

Spin Accumulation and Dynamics in Inversion-Symmetric van der Waals Crystals.

Inversion-symmetric materials are forbidden to show an overall spin texture in their band structure in the presence of time-reversal symmetry. However, in van der Waals materials which lack inversion symmetry within a single layer, it has been proposed that a layer-dependent spin texture can arise leading to a coupled spin-layer degree of freedom. Here we use time-resolved Kerr rotation in inversion-symmetric WSe_{2} and MoSe_{2} bulk crystals to study this spin-layer polarization and unveil its dynamics. Our measurements show that the spin-layer relaxation time in WSe_{2} is limited by phonon scattering at high temperatures and that the interlayer hopping can be tuned by a small in-plane magnetic field at low temperatures, enhancing the relaxation rates. We find a significantly lower lifetime for MoSe_{2} which agrees with theoretical expectations of a spin-layer polarization stabilized by the larger spin-orbit coupling in WSe_{2}.

Constitutive loss and acute pharmacological manipulation of ErbB4 signaling do not affect attention and inhibitory control in mice.

The receptor tyrosine kinase ErbB4 and its ligand trophic factors of the neuregulin (NRG) family have been associated with schizophrenia and other mental disorders in human genetic studies. In vivo studies in mice have shown how abnormal Nrg-ErbB4 signaling leads to deviant behaviors relevant to distinct aspects of schizophrenia, including hyperactivity, sensory gating deficits, working and spatial memory deficits and impaired social behavior. However, so far little is known on the role of ErbB4 in attention and inhibitory control, two aspects of executive functions that are impaired in schizophrenia. Here we investigated the effects of constitutive loss of ErbB4 in the central nervous system of mice on performance in a 5-choice serial reaction time task (5CSRTT) assessing attention and inhibitory control. In this task, ErbB4-/- mice did not show deficits in various parameters of attention, and premature responses as measure of inhibitory control. Nonetheless, ErbB4-/- mice recapitulated a specific set of behavioral phenotypes associated with schizophrenia, including a deficit in spatial learning and memory in the Barnes Maze and in contextual fear learning, and a trend for a deficit in sensorimotor gating. Furthermore, we investigated the effect of acute pharmacological inhibition of ErbB tyrosine kinase receptor using the pan-ErbB kinase inhibitor JNJ-28871063 (JNJ), in an automated version of the 5CSRTT. JNJ did not affect attention and inhibitory control. In conclusion, our data suggest no direct involvement of a classical Nrg-ErbB4 pathway in attention and inhibitory control in mice, while it confirms the involvement of this pathway in other domains relevant to schizophrenia.

Hot-Electron-Induced Ultrafast Demagnetization in Co/Pt Multilayers.

Using specially engineered structures to tailor the optical absorption in a metallic multilayer, we analyze the magnetization dynamics of a Co/Pt multilayer buried below a thick Cu layer. We demonstrate that hot electrons alone can very efficiently induce ultrafast demagnetization. Simulations based on hot electron ballistic transport implemented within a microscopic model that accounts for local dissipation of angular momentum nicely reproduce the experimental results, ruling out contribution of pure thermal transport.

Focused-electron-beam-induced-deposited cobalt nanopillars for nanomagnetic logic.

Nanomagnetic logic (NML) intends to alleviate problems of continued miniaturization of CMOS-based electronics, such as energy dissipation through heat, through advantages such as low power operation and non-volatile magnetic elements. In line with recent breakthroughs in NML with perpendicularly magnetized elements formed from thin films, we have fabricated NML inverter chains from Co nanopillars by focused electron beam induced deposition (FEBID) that exhibit shape-induced perpendicular magnetization. The flexibility of FEBID allows optimization of NML structures. Simulations reveal that the choice of nanopillar dimensions is critical to obtain the correct antiferromagnetically coupled configuration. Experiments carrying the array through a clocking cycle using the Oersted field from an integrated Cu wire show that the array responds to the clocking cycle.

Field-free magnetization reversal by spin-Hall effect and exchange bias.

As the first magnetic random access memories are finding their way onto the market, an important issue remains to be solved: the current density required to write magnetic bits becomes prohibitively high as bit dimensions are reduced. Recently, spin-orbit torques and the spin-Hall effect in particular have attracted significant interest, as they enable magnetization reversal without high current densities running through the tunnel barrier. For perpendicularly magnetized layers, however, the technological implementation of the spin-Hall effect is hampered by the necessity of an in-plane magnetic field for deterministic switching. Here we interface a thin ferromagnetic layer with an anti-ferromagnetic material. An in-plane exchange bias is created and shown to enable field-free S HE-driven magnetization reversal of a perpendicularly magnetized Pt/Co/IrMn structure. Aside from the potential technological implications, our experiment provides additional insight into the local spin structure at the ferromagnetic/anti-ferromagnetic interface.

Functional nickel-based deposits synthesized by focused beam induced processing.

Functional nanostructures fabricated by focused electron/ion beam induced processing (FEBIP/FIBIP) open a promising route for applications in nanoelectronics. Such developments rely on the exploration of new advanced materials. We report here the successful fabrication of nickel-based deposits by FEBIP/FIBIP using bis(methyl cyclopentadienyl)nickel as a precursor. In particular, binary compounds such as nickel oxide (NiO) are synthesized by using an in situ two-step process at room temperature. By this method, as-grown Ni deposits transform into homogeneous NiO deposits using focused electron beam irradiation under O2 flux. This procedure is effective in producing highly pure NiO deposits with resistivity of 2000 Ωcm and a polycrystalline structure with face-centred cubic lattice and grains of 5 nm. We demonstrate that systems based on NiO deposits displaying resistance switching and an exchange-bias effect could be grown by FEBIP using optimized parameters. Our results provide a breakthrough towards using these techniques for the fabrication of functional nanodevices.

Cleaved thin-film probes for scanning tunneling microscopy.

We introduce an alternative type of probe for scanning tunneling microscopy (STM). Instead of using a needle-like tip made from a piece of metallic wire, a sharp-edged cleaved insulating substrate, which is initially covered by a thin conductive film, is used. The sharp tip is formed at the intersection of the two cleaved sides. Using this approach a variety of materials for STM probes can be used, and functionalization of STM probes is possible. The working principle of different probes made of metallic (Pt, Co, and CoB), indium-tin oxide, as well as Cu/Pt and Co/Pt multilayer films are demonstrated by STM imaging of clean Cu(001) and Cu(111) surfaces as well as the epitaxial Co clusters on Cu(111).

Functional characterization of the PCLO p.Ser4814Ala variant associated with major depressive disorder reveals cellular but not behavioral differences.

Genome-wide association studies have suggested a role for a genetic variation in the presynaptic gene PCLO in major depressive disorder (MDD). As with many complex traits, the PCLO variant has a small contribution to the overall heritability and the association does not always replicate. One variant (rs2522833, p.Ser4814Ala) is of particular interest given that it is a common, nonsynonymous exon variant near a calcium-sensing part of PCLO. It has been suggested that the molecular effects of such variations penetrate to a variable extent in the population due to phenotypic and genotypic heterogeneity at the population level. More robust effects may be exposed by studying such variations in isolation, in a more homogeneous context. We tested this idea by modeling PCLO variation in a mouse knock-in model expressing the Pclo(SA)(/)(SA) variant. In the highly homogeneous background of inbred mice, two functional effects of the SA-variation were observed at the cellular level: increased synaptic Piccolo levels, and 30% increased excitatory synaptic transmission in cultured neurons. Other aspects of Piccolo function were unaltered: calcium-dependent phospholipid binding, synapse formation in vitro, and synaptic accumulation of synaptic vesicles. Moreover, anxiety, cognition and depressive-like behavior were normal in Pclo(SA)(/)(SA) mice. We conclude that the PCLO p.Ser4814Ala missense variant produces mild cellular phenotypes, which do not translate into behavioral phenotypes. We propose a model explaining how (subtle) cellular phenotypes do not penetrate to the mouse behavioral level but, due to genetic and phenotypic heterogeneity and non-linearity, can produce association signals in human population studies.

Multi-channel Andreev reflection in Co-W nanocontacts fabricated using focused electron/ion beam induced deposition.

We report multi-channel electron transport in nano-contacts fabricated using focused electron beam induced deposited (FEBID) cobalt and focused ion beam induced deposited (FIBID) tungsten. Anomalous Andreev reflection (AR) effect is observed to which the conventional Blonder-Tinkham-Klapwijk (BTK) fit cannot be applied. In specific, we have observed multiple number of shoulders near the AR peak, whose origin is unknown in literature. We explain this effect based on a simple model that takes into account the material properties of the FIBID grown W superconductor, as well as the specific interface properties that are an outcome of using FEBID/FIBID as a fabrication technique. We show that numerical calculations using the BTK approximation based on the consideration of multiple channels generate similar shoulders as we observed in the AR experiments. Electrical measurements and x-ray photoemission spectroscopy carried out on FIBID W deposits puts additional evidence towards multi-channel current transport occuring at the interface of the nanocontacts.

Ultrafast spin-transfer torque driven by femtosecond pulsed-laser excitation.

Spin currents have an important role in many proposed spintronic devices, as they govern the switching process of magnetic bits in random access memories or drive domain wall motion in magnetic shift registers. The generation of these spin currents has to be fast and energy efficient for realization of these envisioned devices. Recently it has been shown that femtosecond pulsed-laser excitation of thin magnetic films creates intense and ultrafast spin currents. Here we utilize this method to change the orientation of the magnetization in a magnetic bilayer by spin-transfer torque on sub-picosecond timescales. By analysing the dynamics of the magnetic bilayer after laser excitation, the rich physics governing ultrafast spin-transfer torque are elucidated opening up new pathways to ultrafast magnetization reversal, but also providing a new method to quantify optically induced spin currents generated on femtosecond timescales.

Tunable chiral spin texture in magnetic domain-walls.

Magnetic domain-walls (DWs) with a preferred chirality exhibit very efficient current-driven motion. Since structural inversion asymmetry (SIA) is required for their stability, the observation of chiral domain walls in highly symmetric Pt/Co/Pt is intriguing. Here, we tune the layer asymmetry in this system and observe, by current-assisted DW depinning experiments, a small chiral field which sensitively changes. Moreover, we convincingly link the observed efficiency of DW motion to the DW texture, using DW resistance as a direct probe for the internal orientation of the DW under the influence of in-plane fields. The very delicate effect of capping layer thickness on the chiral field allows for its accurate control, which is important in designing novel materials for optimal spin-orbit-torque-driven DW motion.

Tuning organic magnetoresistance in polymer-fullerene blends by controlling spin reaction pathways.

Harnessing the spin degree of freedom in semiconductors is generally a challenging, yet rewarding task. In recent years, the large effect of a small magnetic field on the current in organic semiconductors has puzzled the young field of organic spintronics. Although the microscopic interaction mechanisms between spin-carrying particles in organic materials are well understood nowadays, there is no consensus as to which pairs of spin-carrying particles are actually influencing the current in such a drastic manner. Here we demonstrate that the spin-based particle reactions can be tuned in a blend of organic materials, and microscopic mechanisms are identified using magnetoresistance lineshapes and voltage dependencies as fingerprints. We find that different mechanisms can dominate, depending on the exact materials choice, morphology and operating conditions. Our improved understanding will contribute to the future control of magnetic field effects in organic semiconductors.

Comparing ultrafast demagnetization rates between competing models for finite temperature magnetism.

We investigate a recent controversy in ultrafast magnetization dynamics by comparing the demagnetization rates from two frequently used but competing descriptions for finite temperature magnetism, namely a rigid band structure Stoner-like approach and a system of localized spins. The calculations on the localized spin system show a demagnetization rate and time comparable to experimentally obtained values, whereas the rigid band approach yields negligible demagnetization, even when the microscopic spin-flip process is assumed to be instantaneous. This shows that rigid band structure calculations will never be in quantitative agreement with experiments, irrespective of the investigated microscopic scattering mechanism.

Domain wall depinning governed by the spin Hall effect.

Perpendicularly magnetized materials have attracted significant interest owing to their high anisotropy, which gives rise to extremely narrow, nanosized domain walls. As a result, the recently studied current-induced domain wall motion (CIDWM) in these materials promises to enable a new class of data, memory and logic devices. Here we propose the spin Hall effect as an alternative mechanism for CIDWM. We are able to carefully tune the net spin Hall current in depinning experiments on Pt/Co/Pt nanowires, offering unique control over CIDWM. Furthermore, we determine that the depinning efficiency is intimately related to the internal structure of the domain wall, which we control by the application of small fields along the nanowire. This manifestation of CIDWM offers an attractive degree of freedom for manipulating domain wall motion by charge currents, and sheds light on the existence of contradicting reports on CIDWM in perpendicularly magnetized materials.

High-throughput phenotyping of avoidance learning in mice discriminates different genotypes and identifies a novel gene.

Recognizing and avoiding aversive situations are central aspects of mammalian cognition. These abilities are essential for health and survival and are expected to have a prominent genetic basis. We modeled these abilities in eight common mouse inbred strains covering ∼75% of the species' natural variation and in gene-trap mice (>2000 mice), using an unsupervised, automated assay with an instrumented home cage (PhenoTyper) containing a shelter with two entrances. Mice visited this shelter for 20-1200 times/24 h and 71% of all mice developed a significant and often strong preference for one entrance. Subsequently, a mild aversive stimulus (shelter illumination) was automatically delivered when mice used their preferred entrance. Different genotypes developed different coping strategies. Firstly, the number of entries via the preferred entrance decreased in DBA/2J, C57BL/6J and 129S1/SvImJ, indicating that these genotypes associated one specific entrance with the aversive stimulus. Secondly, mice started sleeping outside (C57BL/6J, DBA/2J), indicating they associated the shelter, in general, with the aversive stimulus. Some mice showed no evidence for an association between the entrance and the aversive light, but did show markedly shorter shelter residence times in response to illumination, indicating they did perceive illumination as aversive. Finally, using this assay, we screened 43 different mutants, which yielded a novel gene, specc1/cytospinB. This mutant showed profound and specific delay in avoidance learning. Together, these data suggest that different genotypes express distinct learning and/or memory of associations between shelter entrance and aversive stimuli, and that specc1/cytospinB is involved in this aspect of cognition.

Shift registers based on magnetic domain wall ratchets with perpendicular anisotropy.

The movement of magnetic domain walls can be used to build a device known as a shift register, which has applications in memory and logic circuits. However, the application of magnetic domain wall shift registers has been hindered by geometrical restrictions, by randomness in domain wall displacement and by the need for high current densities or rotating magnetic fields. Here, we propose a new approach in which the energy landscape experienced by the domain walls is engineered to favour a unidirectional ratchet-like propagation. The domain walls are defined between domains with an out-of-plane (perpendicular) magnetization, which allows us to route domain walls along arbitrary in-plane paths using a time-varying applied magnetic field with fixed orientation. In addition, this ratchet-like motion causes the domain walls to lock to discrete positions along these paths, which is useful for digital devices. As a proof-of-principle experiment we demonstrate the continuous propagation of two domain walls along a closed-loop path in a platinum/cobalt/platinum strip.

Electric-field control of domain wall motion in perpendicularly magnetized materials.

Domain wall motion in materials exhibiting perpendicular magnetic anisotropy has been the subject of intensive research because of its large potential for future spintronic devices. Recently, it has been shown that perpendicular anisotropy of thin films can be influenced by electric fields. Voltage-controlled magnetic switching has already been realized, which is envisioned to lead to low-power logic and memory devices. Here we demonstrate a radically new application of this effect, namely control of domain wall motion by electric fields. We show that an applied voltage perpendicular to a Co or CoB wire can significantly increase or decrease domain wall velocities. Velocity modification over an order of magnitude is demonstrated (from 0.4 to 4 µm s(-1)), providing a first step towards electrical control of domain wall devices. This opens up possibilities of real-time and local control of domain wall motion by electric fields at extremely low power cost.