Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga2O3/NiO Semiconductors.

Recent advancements in power electronics have been driven by Ga2O3-based ultrawide bandgap (UWBG) semiconductor devices, enabling efficient high-current switching. However, integrating Ga2O3 power devices with essential silicon CMOS logic circuits for advanced control poses fabrication challenges. Researchers have introduced Ga2O3-based NMOS and pseudo-CMOS circuits for integration, but these circuits may either consume more power or increase the design complexity. Hence, this article proposes Ga2O3-based CMOS realized using heterogeneous 3D-stacked bilayer ambipolar transistors. These ambipolar transistors consist of HfO2/NiO/Ga2O3/NiO/HfO2 heterostructures that are wrapped around by the Ti/Au gate electrode, resulting in record high electron and hole current on/off ratios of 109 and 107. The threshold voltage, subthreshold swing, and current density measured from 100 ambipolar devices (across 5 batches) are around -7.99 ± 0.92 V (p-channel) and 7.81 ± 0.81 V (n-channel), 0.59 ± 0.07 V/dec (p-channel) and 0.61 ± 0.06 V/dec (n-channel), and 0.99 ± 0.26 mA/mm (p-channel) and 58.23 ± 12.99 mA/mm (n-channel), respectively. All the 100 ambipolar devices showed decent long-term stability over a period of 200 days, exhibiting reliable electrical performance. The threshold voltage shift (ΔVTH) after negative bias stressing for a period of 3500 s is around 11.52 V (p-channel) and 10.21 V (n-channel), respectively. Notably, the n-channels exhibit ∼2 orders higher on/off ratio than the best Ga2O3 unipolar transistors at 300 °C. Moreover, the polarities of ambipolar transistors are reconfigurable into p- or n-MOS, which are integrated to demonstrate CMOS inverter, NOR, and NAND logic gates. The switching periods from "0" to "1" and from "1" to "0" of NOR are 0.12 and 0.17 µs, and those of NAND are 0.16 and 0.13 µs. This work lays the foundation of oxide-semiconductor-based CMOS for future integrated electronics.

Transferable Ga2O3 Membrane for Vertical and Flexible Electronics via One-Step Exfoliation.

Transferable Ga2O3 thin film membrane is desirable for vertical and flexible solar-blind photonics and high-power electronics applications. However, Ga2O3 epitaxially grown on rigid substrates such as sapphire, Si, and SiC hinders its exfoliation due to the strong covalent bond between Ga2O3 and substrates, determining its lateral device configuration and also hardly reaching the ever-increasing demand for wearable and foldable applications. Mica substrate, which has an atomic-level flat surface and high-temperature tolerance, could be a good candidate for the van der Waals (vdW) epitaxy of crystalline Ga2O3 membrane. Beyond that, benefiting from the weak vdW bond between Ga2O3 and mica substrate, in this work, the Ga2O3 membrane is exfoliated and transferred to arbitrary flexible and adhesive tape, allowing for the vertical and flexible electronic configuration. This straightforward exfoliation method is verified to be consistent and reproducible by the transfer and characterization of thick (∼380 nm)/thin (∼95 nm) κ-phase Ga2O3 and conductive n-type ß-Ga2O3. Vertical photodetectors are fabricated based on the exfoliated Ga2O3 membrane, denoting the peak response at ∼250 nm. Through the integration of Ti/Au Ohmic contact and Ni/Ag Schottky contact electrode, the vertical photodetector exhibits self-powered photodetection behavior with a responsivity of 17 mA/W under zero bias. The vdW-bond-assisted exfoliation of the Ga2O3 membrane demonstrated here could provide enormous opportunities in the pursuit of vertical and flexible Ga2O3 electronics.

Ultrasensitive Flexible κ-Phase Ga2O3 Solar-Blind Photodetector.

Flexible Ga2O3 photodetectors have attracted considerable interest owing to their potential use in the development of implantable, foldable, and wearable optoelectronics. In particular, ß-phase Ga2O3 has been most widely investigated due to the highest thermodynamic stability. However, high-quality ß-phase Ga2O3 relies on the ultrahigh crystallization temperature (usually ≥750 °C), beyond the thermal tolerance of most flexible substrates. In this work, we epitaxially grow a high-quality metastable κ-phase Ga2O3 (002) thin film on a flexible mica (001) substrate under 680 °C and develop a flexible κ-Ga2O3 thin film photodetector with ultrahigh performance. Epitaxial κ-Ga2O3 and the mica substrate are maintained to be thermally stable up to 750 °C, suggesting their potential for harsh environment applications. The responsivity, on/off ratio, detectivity, and external quantum efficiency of the fabricated photodetector are 703 A/W, 1.66 × 107, 4.08 × 1014 Jones, and 3.49 × 105 %, respectively, for 250 nm incident light and a 20 V bias voltage. These values are record-high values reported to date for flexible Ga2O3 photodetectors. Furthermore, the flexible photodetector shows robust flexibility for bending radii of 1, 2, and 3 cm. More importantly, it shows strong mechanical stability against 10,000 bending test cycles. These results reveal the significance of high-quality κ-phase Ga2O3 grown heteroepitaxially on a flexible mica substrate, especially its potential for use in future flexible solar-blind detection systems.

Au-Nanoplasmonics-Mediated Surface Plasmon-Enhanced GaN Nanostructured UV Photodetectors.

The nanoplasmonic impact of chemically synthesized Au nanoparticles (Au NPs) on the performance of GaN nanostructure-based ultraviolet (UV) photodetectors is analyzed. The devices with uniformly distributed Au NPs on GaN nanostructures (nanoislands and nanoflowers) prominently respond toward UV illumination (325 nm) in both self-powered as well as photoconductive modes of operation and have shown fast and stable time-correlated response with significant enhancement in the performance parameters. A comprehensive analysis of the device design, laser power, and bias-dependent responsivity and response time is presented. The fabricated Au NP/GaN nanoflower-based device yields the highest photoresponsivity of ∼ 380 mA/W, detectivity of ∼ 1010 jones, reduced noise equivalent power of ∼ 5.5 × 10-13 W Hz-1/2, quantum efficiency of ∼ 145%, and fast response/recovery time of ∼40 ms. The report illustrates the mechanism where light interacts with the chemically synthesized nanoparticles guided by the surface plasmon to effectively enhance the device performance. It is observed that the Au NP-stimulated local surface plasmon resonance effect and reduced channel resistance contribute to the augmented performance of the devices. Further, the decoration of low-dimensional Au NPs on GaN nanostructures acts as a detection enhancer with a fast recovery time and paves the way toward the realization of energy-efficient optoelectronic device applications.

Surface-Engineered Nanostructure-Based Efficient Nonpolar GaN Ultraviolet Photodetectors.

Surface-engineered nanostructured nonpolar (112̅0) gallium nitride (GaN)-based high-performance ultraviolet (UV) photodetectors (PDs) have been fabricated. The surface morphology of a nonpolar GaN film was modified from pyramidal shape to flat and trigonal nanorods displaying facets along different crystallographic planes. We report the ease of enhancing the photocurrent (5.5-fold) and responsivity (6-fold) of the PDs using a simple and convenient wet chemical-etching-induced surface engineering. The fabricated metal-semiconductor-metal structure-based surface-engineered UV PD exhibited a significant increment in detectivity, that is, from 0.43 to 2.83 (×108) Jones, and showed a very low noise-equivalent power (∼10-10 W Hz-1/2). The reliability of the nanostructured PD was ensured via fast switching with a response and decay time of 332 and 995 ms, which were more than five times faster with respect to the unetched pyramidal structure-based UV PD. The improvement in device performance was attributed to increased light absorption, efficient transport of photogenerated carriers, and enhancement in conduction cross section via elimination of recombination/trap centers related to defect states. Thus, the proposed method could be a promising approach to enhance the performance of GaN-based PD technology.

Wet chemical etching induced stress relaxed nanostructures on polar & non-polar epitaxial GaN films.

We report formation of aligned nanostructures on epitaxially grown polar and nonpolar GaN films via wet chemical (hot H3PO4 and KOH) etching. The morphological evolution exhibited stress relaxed faceted nanopyramids, flat/trigonal nanorods and porous structures with high hydrophilicity and reduced wettability. The nanostructured films divulged significant suppression of defects and displayed an enhanced intensity ratio of the near band edge emission to the defect band. Extensive photoemission analysis revealed variation in oxidation state along with elimination of OH- and adsorbed H2O molecules from the chemically modified surfaces. Fermi level pinning, and alteration in the surface polarity with substantial changes in the electron affinities were also perceived. The temperature dependent current-voltage analysis of the nanostructured surfaces displayed enhancement in current conduction. The in-depth analysis demonstrates that the chemically etched samples could potentially be utilized as templates in the design/growth of III-nitride based high performance devices.

Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE.

The relationship of the growth temperature with stress, defect states, and electronic structure of molecular beam epitaxy grown GaN films on c-plane (0001) sapphire substrates is demonstrated. A minimum compressively stressed GaN film is grown by tuning the growth temperature. The correlation of dislocations/defects with the stress relaxation is scrutinized by high-resolution X-ray diffraction and photoluminescence measurements which show a high crystalline quality with significant reduction in the threading dislocation density and defect related bands. A substantial reduction in yellow band related defect states is correlated with the stress relaxation in the grown film. Temperature dependent Raman analysis shows the thermal stability of the stress relaxed GaN film which further reveals a downshift in the E2 (high) phonon frequency owing to the thermal expansion of the lattice at elevated temperatures. Electronic structure analysis reveals that the Fermi level of the films is pinned at the respective defect states; however, for the stress relaxed film it is located at the charge neutrality level possessing the lowest electron affinity. The analysis demonstrates that the generated stress not only affects the defect states, but also the crystal quality, surface morphology and electronic structure/properties.