Seamless High-Q Microwave Cavities for Multimode Circuit Quantum Electrodynamics.

Multimode cavity quantum electrodynamics-where a two-level system interacts simultaneously with many cavity modes-provides a versatile framework for quantum information processing and quantum optics. Because of the combination of long coherence times and large interaction strengths, one of the leading experimental platforms for cavity QED involves coupling a superconducting circuit to a 3D microwave cavity. In this work, we realize a 3D multimode circuit QED system with single photon lifetimes of 2 ms across 9 modes of a novel seamless cavity. We demonstrate a variety of protocols for universal single-mode quantum control applicable across all cavity modes, using only a single drive line. We achieve this by developing a straightforward flute method for creating monolithic superconducting microwave cavities that reduces loss while simultaneously allowing control of the mode spectrum and mode-qubit interaction. We highlight the flexibility and ease of implementation of this technique by using it to fabricate a variety of 3D cavity geometries, providing a template for engineering multimode quantum systems with exceptionally low dissipation. This work is an important step towards realizing hardware efficient random access quantum memories and processors, and for exploring quantum many-body physics with photons.

Characterization of Edge Contact: Atomically Resolved Semiconductor-Metal Lateral Boundary in MoS2.

Despite recent efforts for the development of transition-metal-dichalcogenide-based high-performance thin-film transistors, device performance has not improved much, mainly because of the high contact resistance at the interface between the 2D semiconductor and the metal electrode. Edge contact has been proposed for the fabrication of a high-quality electrical contact; however, the complete electronic properties for the contact resistance have not been elucidated in detail. Using the scanning tunneling microscopy/spectroscopy and scanning transmission electron microscopy techniques, the edge contact, as well as the lateral boundary between the 2D semiconducting layer and the metalized interfacial layer, are investigated, and their electronic properties and the energy band profile across the boundary are shown. The results demonstrate a possible mechanism for the formation of an ohmic contact in homojunctions of the transition-metal dichalcogenides semiconductor-metal layers and suggest a new device scheme utilizing the low-resistance edge contact.

Nanoscale control of phonon excitations in graphene.

Phonons, which are collective excitations in a lattice of atoms or molecules, play a major role in determining various physical properties of condensed matter, such as thermal and electrical conductivities. In particular, phonons in graphene interact strongly with electrons; however, unlike in usual metals, these interactions between phonons and massless Dirac fermions appear to mirror the rather complicated physics of those between light and relativistic electrons. Therefore, a fundamental understanding of the underlying physics through systematic studies of phonon interactions and excitations in graphene is crucial for realising graphene-based devices. In this study, we demonstrate that the local phonon properties of graphene can be controlled at the nanoscale by tuning the interaction strength between graphene and an underlying Pt substrate. Using scanning probe methods, we determine that the reduced interaction due to embedded Ar atoms facilitates electron-phonon excitations, further influencing phonon-assisted inelastic electron tunnelling.

Atomic and electronic structure of an alloyed topological insulator, Bi1.5Sb0.5Te1.7Se1.3.

Bi2-xSbxTe3-ySey has been argued to exhibit both topological surface states and insulating bulk states, but has not yet been studied with local probes on the atomic scale. Here we report on the atomic and electronic structures of Bi1.5Sb0.5Te1.7Se1.3 studied using scanning tunnelling microscopy (STM) and spectroscopy (STS). Although there is significant surface disorder due to alloying of constituent atoms, cleaved surfaces of the crystals present a well-ordered hexagonal lattice with 10 Å high quintuple layer steps. STS results reflect the band structure and indicate that the surface state and Fermi energy are both located inside the energy gap. In particular, quasi-particle interference patterns from electron scattering demonstrate that the surface states possess linear dispersion and chirality from spin texture, thus verifying its topological nature. This finding demonstrates that alloying is a promising route to achieve full suppression of bulk conduction in topological insulators whilst keeping the topological surface state intact.