Design of clone-specific probes from genome sequences for rapid PCR-typing of outbreak pathogens.

The genome sequence of one OXA-48-producing Klebsiella pneumoniae belonging to sequence type (ST) 405, and three belonging to ST11, were used to design and test ST-specific PCR assays for typing OXA-48-producing K. pneumoniae. The approach proved to be useful for in-house development of rapid PCR typing assays for local outbreak surveillance.

Influence of the atmosphere on the growth by CVD of silicon based nanostructures.

Silica nanowires (phi = 70-80 nm) and core crystalline silicon carbide/amorphous silica coaxial nanocables (phi = 30-50 nm) have been grown on Ni (5 nm) covered silicon substrates by thermal CVD at 950 degrees C. Heating the sample in different atmospheres and the addition of methane lead to the growth of the nanostructures. The as-grown product was characterized by Scanning Electron (SEM) and Transmission Electron (TEM) Microscopies, Infrared (IR) and Glow Discharge Optical Emission (GDOES) Spectroscopies. High contents of Ni, O and Si have been detected in the surface layer for argon and nitrogen treatments and in both cases silica based nanostructures grew. However, no nanostructures were obtained in hydrogen environment probably due to the detected Ni migration inward the substrate making the nanostructures nucleation more difficult. In this work we have studied and proven that previous processes on the substrate surface affect significantly the nanostructures growth.

The key role of hydrogen in the growth of SiC/SiO(2) nanocables.

SiC/SiO(2) nanocables, consisting of a crystalline SiC core surrounded by an amorphous silica shell, have been grown by thermal chemical vapour deposition (CVD) at 950 °C on Ni-covered silicon substrates. The addition of methane to a 375 Torr hydrogen atmosphere, after heating the substrate in argon, leads to the growth of the SiC/SiO(2) nanocables, by the carbothermal reduction of silicon oxide as the initial stage. The growth mechanism follows the model previously proposed by us for a reducing medium. From the results obtained, several effects of hydrogen on the deposition process have been established: (a) reduction of the nickel nucleation sites, thus favouring the formation of SiC from the initial stage; (b) oxygen removal in the medium hindering the oxidative effect over the SiO and C species, thus promoting the nanocable growth, and (c) increase of the SiO concentration in the neighbourhood of the active nucleation sites. In addition, it is important to mention that SiC/SiO(2) nanocables, following the already proposed model, are obtained uniquely in a narrow hydrogen pressure range. At high hydrogen pressure, the unexpected formation of silica nanowires together with the SiC/SiO(2) nanocables has been detected.