Terahertz-Triggered Phase Transition and Hysteresis Narrowing in a Nanoantenna Patterned Vanadium Dioxide Film.

We demonstrate that high-field terahertz (THz) pulses trigger transient insulator-to-metal transition in a nanoantenna patterned vanadium dioxide thin film. THz transmission of vanadium dioxide instantaneously decreases in the presence of strong THz fields. The transient THz absorption indicates that strong THz fields induce electronic insulator-to-metal transition without causing a structural transformation. The transient phase transition is activated on the subcycle time scale during which the THz pulse drives the electron distribution of vanadium dioxide far from equilibrium and disturb the electron correlation. The strong THz fields lower the activation energy in the insulating phase. The THz-triggered insulator-to-metal transition gives rise to hysteresis loop narrowing, while lowering the transition temperature both for heating and cooling sequences. THz nanoantennas enhance the field-induced phase transition by intensifying the field strength and improve the detection sensitivity via antenna resonance. The experimental results demonstrate a potential that plasmonic nanostructures incorporating vanadium dioxide can be the basis for ultrafast, energy-efficient electronic and photonic devices.

Unconventional terahertz carrier relaxation in graphene oxide: observation of enhanced auger recombination due to defect saturation.

Photoexcited carrier relaxation is a recurring topic in understanding the transient conductivity dynamics of graphene-based devices. For atomically thin graphene oxide (GO), a simple free-carrier Drude response is expected to govern the terahertz (THz) conductivity dynamics--same dynamics observed in conventional CVD-grown graphene. However, to date, no experimental testimony has been provided on the origin of photoinduced conductivity increase in GO. Here, using ultrafast THz spectroscopy, we show that the photoexcited carrier relaxation in GO exhibits a peculiar non-Drude behavior. Unlike graphene, the THz dynamics of GO show percolation behaviors: as the annealing temperature increases, transient THz conductivity rapidly increases and the associated carrier relaxation changes from mono- to biexponential decay. After saturating the recombination decay through defect trapping, a new ultrafast decay channel characterized by multiparticle Auger scattering is observed whose threshold pump fluence is found to be 50 µJ/cm2. The increased conductivity is rapidly suppressed within 1 ps due to the Auger recombination, and non-Drude THz absorptions are subsequently emerged as a result of the defect-trapped high-frequency oscillators.

Terahertz excitation of a coherent λ-type three-level system of exciton-polariton modes in a quantum-well microcavity.

Interactions of few-cycle terahertz pulses with the induced optical polarization in a quantum-well microcavity reveal that the lower and higher exciton-polariton modes together with the optically forbidden 2p-exciton state form a unique Λ-type three-level system. Pronounced nonlinearities are observed via time-resolved strong-terahertz and weak-optical excitation spectroscopy and explained with a fully microscopic theory. The results show that the terahertz pulses strongly couple the exciton-polariton states to the 2p-exciton state while no resonant transition between the two polariton levels is observed.

Terahertz imaging and spectroscopy of large-area single-layer graphene.

We demonstrate terahertz (THz) imaging and spectroscopy of a 15 × 15-mm2 single-layer graphene film on Si using broadband THz pulses. The THz images clearly map out the THz carrier dynamics of the graphene-on-Si sample, allowing us to measure sheet conductivity with sub-mm resolution without fabricating electrodes. The THz carrier dynamics are dominated by intraband transitions and the THz-induced electron motion is characterized by a flat spectral response. A theoretical analysis based on the Fresnel coefficients for a metallic thin film shows that the local sheet conductivity varies across the sample from σ(s) = 1.7 × 10(-3) to 2.4 × 10(-3) Ω(-1) (sheet resistance, ρ(s) = 420 - 590 Ω/sq).

Multiphoton absorption and nonlinear refraction of GaAs in the mid-infrared.

We report the wavelength dependencies of the two- and three-photon absorption coefficients of undoped GaAs in the spectral range 1.3-3.5 microm, as well as nonlinear refractive index n2 in the range 1.7-3.25 microm. The data were obtained by using the single-beam Z-scan method with 100-fs-long optical pulses. Anisotropy of the three-photon absorption coefficient was observed and found to be consistent with the crystal symmetry of GaAs.

Interaction of strong single-cycle terahertz pulses with semiconductor quantum wells.

An experiment-theory comparison is presented to demonstrate terahertz-induced extreme-nonlinear transients in a GaAs/AlGaAs quantum-well system. The terahertz-pump and optical-probe experiments show pronounced spectral modulations of the light- and heavy-hole excitonic resonances. Excellent agreement with the results of microscopic many-body calculations is obtained, identifying clear ponderomotive contributions and the generation of terahertz harmonics.

Terahertz wave propagation in one-dimensional periodic dielectrics.

We demonstrate the temporal evolution of terahertz (THz) wave propagation in one-dimensional periodic dielectrics. Distributed Bragg reflectors and a resonant cavity are investigated: The structures involve air gaps interleaved between polymer films. Transmitted and reflected broadband THz waves are measured by means of THz time-domain spectroscopy. The experimental results agree well with transfer matrix calculations.