A proposal for leaky integrate-and-fire neurons by domain walls in antiferromagnetic insulators.

Brain-inspired neuromorphic computing is a promising path towards next generation analogue computers that are fundamentally different compared to the conventional von Neumann architecture. One model for neuromorphic computing that can mimic the human brain behavior are spiking neural networks (SNNs), of which one of the most successful is the leaky integrate-and-fire (LIF) model. Since conventional complementary metal-oxide-semiconductor (CMOS) devices are not meant for modelling neural networks and are energy inefficient in network applications, recently the focus shifted towards spintronic-based neural networks. In this work, using the advantage of antiferromagnetic insulators, we propose a non-volatile magnonic neuron that could be the building block of a LIF spiking neuronal network. In our proposal, an antiferromagnetic domain wall in the presence of a magnetic anisotropy gradient mimics a biological neuron with leaky, integrating, and firing properties. This single neuron is controlled by polarized antiferromagnetic magnons, activated by either a magnetic field pulse or a spin transfer torque mechanism, and has properties similar to biological neurons, namely latency, refraction, bursting and inhibition. We argue that this proposed single neuron, based on antiferromagnetic domain walls, is faster and has more functionalities compared to previously proposed neurons based on ferromagnetic systems.

Self-consistent computation of spin torques and magneto-resistance in tunnel junctions and magnetic read-heads with metallic pinhole defects.

A three-dimensional self-consistent spin transport model is developed, which includes both tunnelling transport, leading to tunnelling magneto-resistance, as well as metallic transport, leading to giant magneto-resistance. An explicit solution to the drift-diffusion model is also derived, which allows analysing the effect of both the reference and free layer thickness on the spin-transfer torque polarization and field-like coefficient. It is shown the model developed here can be used to compute the signal-to-noise ratio in realistic magnetic read-heads, where spin torque-induced fluctuations and instabilities limit the maximum operating voltage. The effect of metallic pinhole defects in the insulator layer is also analysed. Increasing the area covered by pinholes results in a rapid degradation of the magneto-resistance, following an inverse dependence. Moreover, the spin torque angular dependence becomes skewed, similar to that obtained in fully metallic spin valves, and the spin-transfer torque polarization decreases. The same results are obtained when considering tunnel junctions with a single pinhole defect, but decreasing cross-sectional area, showing that even a single pinhole defect can significantly degrade the performance of tunnel junctions and magnetic read-heads below the 40 nm node.

Collective skyrmion motion under the influence of an additional interfacial spin-transfer torque.

Here we study the effect of an additional interfacial spin-transfer torque, as well as the well-established spin-orbit torque and bulk spin-transfer torque, on skyrmion collections-group of skyrmions dense enough that they are not isolated from one another-in ultrathin heavy metal/ferromagnetic multilayers, by comparing modelling with experimental results. Using a skyrmion collection with a range of skyrmion diameters and landscape disorder, we study the dependence of the skyrmion Hall angle on diameter and velocity, as well as the velocity as a function of diameter. We show that inclusion of the interfacial spin-transfer torque results in reduced skyrmion Hall angles, with values close to experimental results. We also show that for skyrmion collections the velocity is approximately independent of diameter, in marked contrast to the motion of isolated skyrmions, as the group of skyrmions move together at an average group velocity. Moreover, the calculated skyrmion velocities are comparable to those obtained in experiments when the interfacial spin-transfer torque is included. Our results thus show the significance of the interfacial spin-transfer torque in ultrathin magnetic multilayers, which helps to explain the low skyrmion Hall angles and velocities observed in experiment. We conclude that the interfacial spin-transfer torque should be considered in numerical modelling for reproduction of experimental results.

Effect of inter-layer spin diffusion on skyrmion motion in magnetic multilayers.

It is well known that skyrmions can be driven using spin-orbit torques due to the spin-Hall effect. Here we show an additional contribution in multilayered stacks arises from vertical spin currents due to inter-layer diffusion of a spin accumulation generated at a skyrmion. This additional interfacial spin torque is similar in form to the in-plane spin transfer torque, but is significantly enhanced in ultra-thin films and acts in the opposite direction to the electron flow. The combination of this diffusive spin torque and the spin-orbit torque results in skyrmion motion which helps to explain the observation of small skyrmion Hall angles even with moderate magnetisation damping values. Further, the effect of material imperfections on threshold currents and skyrmion Hall angle is also investigated. Topographical surface roughness, as small as a single monolayer variation, is shown to be an important contributing factor in ultra-thin films, resulting in good agreement with experimental observations.

Unified treatment of spin torques using a coupled magnetisation dynamics and three-dimensional spin current solver.

A three-dimensional spin current solver based on a generalised spin drift-diffusion description, including the bulk and interfacial spin Hall effects, is integrated with a magnetisation dynamics solver. The resulting model is shown to simultaneously reproduce the spin-orbit torques generated using the spin Hall effect, spin pumping torques generated by magnetisation dynamics in multilayers, as well as the spin transfer torques acting on magnetisation regions with spatial gradients, whilst field-like and spin-like torques are reproduced in a spin valve geometry. Two approaches to modelling interfaces are analysed, one based on the spin mixing conductance and the other based on continuity of spin currents where the spin dephasing length governs the absorption of transverse spin components. In both cases analytical formulas are derived for the spin-orbit torques in a heavy metal/ferromagnet bilayer geometry, showing in general both field-like and damping-like torques are generated. The limitations of the analytical approach are discussed, showing that even in a simple bilayer geometry, due to the non-uniformity of the spin currents, a full three-dimensional treatment is required. The model is further applied to the analysis of the spin Hall angle in Pt by reproducing published experimental ferromagnetic resonance data in the bilayer geometry.

Heat-Assisted Multiferroic Solid-State Memory.

A heat-assisted multiferroic solid-state memory design is proposed and analysed, based on a PbNbZrSnTiO3 antiferroelectric layer and Ni81Fe19 magnetic free layer. Information is stored as magnetisation direction in the free layer of a magnetic tunnel junction element. The bit writing process is contactless and relies on triggering thermally activated magnetisation switching of the free layer towards a strain-induced anisotropy easy axis. A stress is generated using the antiferroelectric layer by voltage-induced antiferroelectric to ferroelectric phase change, and this is transmitted to the magnetic free layer by strain-mediated coupling. The thermally activated strain-induced magnetisation switching is analysed here using a three-dimensional, temperature-dependent magnetisation dynamics model, based on simultaneous evaluation of the stochastic Landau-Lifshitz-Bloch equation and heat flow equation, together with stochastic thermal fields and magnetoelastic contributions. The magnetisation switching probability is calculated as a function of stress magnitude and maximum heat pulse temperature. An operating region is identified, where magnetisation switching always occurs, with stress values ranging from 80 to 180 MPa, and maximum temperatures normalised to the Curie temperature ranging from 0.65 to 0.99.

Synthetic ferrimagnet nanowires with very low critical current density for coupled domain wall motion.

Domain walls in ferromagnetic nanowires are potential building-blocks of future technologies such as racetrack memories, in which data encoded in the domain walls are transported using spin-polarised currents. However, the development of energy-efficient devices has been hampered by the high current densities needed to initiate domain wall motion. We show here that a remarkable reduction in the critical current density can be achieved for in-plane magnetised coupled domain walls in CoFe/Ru/CoFe synthetic ferrimagnet tracks. The antiferromagnetic exchange coupling between the layers leads to simple Néel wall structures, imaged using photoemission electron and Lorentz transmission electron microscopy, with a width of only ~100 nm. The measured critical current density to set these walls in motion, detected using magnetotransport measurements, is 1.0 × 1011 Am-2, almost an order of magnitude lower than in a ferromagnetically coupled control sample. Theoretical modelling indicates that this is due to nonadiabatic driving of anisotropically coupled walls, a mechanism that can be used to design efficient domain-wall devices.