Conformity Experiment on Inelastic Scattering Exponent of Electrons in Two Dimensions.

The quantum Hall (QH) effect is one of the most widely studied physical phenomenon in two dimensions. The plateau-plateau transition within this effect can be comprehensively described by the scaling theory, which encompasses three pivotal exponents: the critical exponent κ, the inelastic scattering exponent p, and the universal exponent γ. Prior studies have focused on measuring κ and estimating γ, assuming a constant p value of 2 across magnetic fields. Here, our work marks a significant advancement by measuring all three exponents within a single graphene device and a conventional two-dimensional electron system. This study uniquely determines p at low magnetic fields (weak localization region and well outside the QH regime) and high magnetic fields (in the vicinity of the QH regime). Employing a comprehensive analytical approach that includes weak localization, plateau-plateau transitions, and variable range hopping, we have directly determined κ, p, and γ. Our findings reveal a distinct variation in p, shifting from 1 in the low magnetic field regime to 2 in the QH regime in graphene.

Chiral anomaly and Weyl orbit in three-dimensional Dirac semimetal Cd3As2grown on Si.

Preparing Cd3As2, which is a three-dimensional (3D) Dirac semimetal in certain crystal orientation, on Si is highly desirable as such a sample may well be fully compatible with existing Si CMOS technology. However, there is a dearth of such a study regarding Cd3As2films grown on Si showing the chiral anomaly. Here,for the first time, we report the novel preparation and fabrication technique of a Cd3As2(112) film on a Si (111) substrate with a ZnTe (111) buffer layer which explicitly shows the chiral anomaly with a nontrivial Berry's phase ofπ. Despite the Hall carrier density (n3D≈9.42×1017cm-3) of our Cd3As2film, which is almost beyond the limit for the portents of a 3D Dirac semimetal to emerge, we observe large linear magnetoresistance in a perpendicular magnetic field and negative magnetoresistance in a parallel magnetic field. These results clearly demonstrate the chiral magnetic effect and 3D Dirac semimetallic behavior in our silicon-based Cd3As2film. Our tailoring growth of Cd3As2on a conventional substrate such as Si keeps the sample quality, while also achieving a low carrier concentration.

Tungsten Nitride (W5N6): An Ultraresilient 2D Semimetal.

Two-dimensional transition metal nitrides offer intriguing possibilities for achieving novel electronic and mechanical functionality owing to their distinctive and tunable bonding characteristics compared to other 2D materials. We demonstrate here the enabling effects of strong bonding on the morphology and functionality of 2D tungsten nitrides. The employed bottom-up synthesis experienced a unique substrate stabilization effect beyond van-der-Waals epitaxy that favored W5N6 over lower metal nitrides. Comprehensive structural and electronic characterization reveals that monolayer W5N6 can be synthesized at large scale and shows semimetallic behavior with an intriguing indirect band structure. Moreover, the material exhibits exceptional resilience against mechanical damage and chemical reactions. Leveraging these electronic properties and robustness, we demonstrate the application of W5N6 as atomic-scale dry etch stops that allow the integration of high-performance 2D materials contacts. These findings highlight the potential of 2D transition metal nitrides for realizing advanced electronic devices and functional interfaces.

Determining the Electron Scattering from Interfacial Coulomb Scatterers in Two-Dimensional Transistors.

Two-dimensional (2D) transistors are promising for potential applications in next-generation semiconductor chips. Owing to the atomically thin thickness of 2D materials, the carrier scattering from interfacial Coulomb scatterers greatly suppresses the carrier mobility and hampers transistor performance. However, a feasible method to quantitatively determine relevant Coulomb scattering parameters from interfacial long-range scatterers is largely lacking. Here, we demonstrate a method to determine the Coulomb scattering strength and the density of Coulomb scattering centers in InSe transistors by comprehensively analyzing the low-frequency noise and transport characteristics. Moreover, the relative contributions from long-range and short-range scattering in the InSe transistors can be distinguished. This method is employed to make InSe transistors consisting of various interfaces a model system, revealing the profound effects of different scattering sources on transport characteristics and low-frequency noise. Quantitatively accessing the scattering parameters of 2D transistors provides valuable insight into engineering the interfaces of a wide spectrum of ultrathin-body transistors for high-performance electronics.

Ultrahigh-quality graphene resonators by liquid-based strain-engineering.

Two-dimensional (2D) material-based nanoelectromechanical (NEM) resonators are expected to be enabling components in hybrid qubits that couple mechanical and electromagnetic degrees of freedom. However, challenges in their sensitivity and coherence time have to be overcome to realize such mechanohybrid quantum systems. We here demonstrate the potential of strain engineering to realize 2D material-based resonators with unprecedented performance. A liquid-based tension process was shown to enhance the resonance frequency and quality factor of graphene resonators six-fold. Spectroscopic and microscopic characterization reveals a surface-energy enhanced wall interaction as the origin of this effect. The response of our tensioned resonators is not limited by external loss factors and exhibits near-ideal internal losses, yielding superior resonance frequencies and quality factors to all previously reported 2D material devices. Our approach represents a powerful method of enhancing 2D NEM resonators for future quantum systems.

Nanoscale Gap-Plasmon-Enhanced Superconducting Photon Detectors at Single-Photon Level.

With a growing demand for detecting light at the single-photon level in various fields, researchers are focused on optimizing the performance of superconducting single-photon detectors (SSPDs) by using multiple approaches. However, input light coupling for visible light has remained a challenge in the development of efficient SSPDs. To overcome these limitations, we developed a novel system that integrates NbN superconducting microwire photon detectors (SMPDs) with gap-plasmon resonators to improve the photon detection efficiency to 98% while preserving all detector performance features, such as polarization insensitivity. The plasmonic SMPDs exhibit a hot-belt effect that generates a nonlinear photoresponse in the visible range operated at 9 K (∼0.64Tc), resulting in a 233-fold increase in phonon-electron interaction factor (γ) compared to pristine SMPDs at resonance under CW illumination. These findings open up new opportunities for ultrasensitive single-photon detection in areas like quantum information processing, quantum optics, imaging, and sensing at visible wavelengths.

Doping-Free High-Performance Photovoltaic Effect in a WSe2 Lateral p-n Homojunction Formed by Contact Engineering.

Two-dimensional transition metal dichalcogenides (TMDs) are promising materials for semiconductor nanodevices owing to their flexibility, transparency, and appropriate band gaps. A variety of optoelectronic and electronic devices based on TMDs p-n diodes have been extensively investigated due to their unique advantages. However, improving their performance is challenging for commercial applications. In this study, we propose a facile and doping-free approach based on the contact engineering of a few-layer tungsten di-selenide to form a lateral p-n homojunction photovoltaic. By combining surface and edge contacts for p-n diode fabrication, the photovoltaic effect is achieved with a high fill factor of ≈0.64, a power conversion efficiency of up to ≈4.5%, and the highest external quantum efficiency with a value of ≈67.6%. The photoresponsivity reaches 283 mA/W, indicating excellent photodiode performance. These results demonstrate that our technique has great potential for application in next-generation optoelectronic devices.

Type-III Superconductivity.

Superconductivity remains one of most fascinating quantum phenomena existing on a macroscopic scale. Its rich phenomenology is usually described by the Ginzburg-Landau (GL) theory in terms of the order parameter, representing the macroscopic wave function of the superconducting condensate. The GL theory addresses one of the prime superconducting properties, screening of the electromagnetic field because it becomes massive within a superconductor, the famous Anderson-Higgs mechanism. Here the authors describe another widely-spread type of superconductivity where the Anderson-Higgs mechanism does not work and must be replaced by the Deser-Jackiw-Templeton topological mass generation and, correspondingly, the GL effective field theory must be replaced by an effective topological gauge theory. These superconductors are inherently inhomogeneous granular superconductors, where electronic granularity is either fundamental or emerging. It is shown that the corresponding superconducting transition is a 3D generalization of the 2D Berezinskii-Kosterlitz-Thouless vortex binding-unbinding transition. The binding-unbinding of the line-like vortices in 3D results in the Vogel-Fulcher-Tamman scaling of the resistance near the superconducting transition. The authors report experimental data fully confirming the VFT behavior of the resistance.

Phase Modulation of Self-Gating in Ionic Liquid-Functionalized InSe Field-Effect Transistors.

Understanding the Coulomb interactions between two-dimensional (2D) materials and adjacent ions/impurities is essential to realizing 2D material-based hybrid devices. Electrostatic gating via ionic liquids (ILs) has been employed to study the properties of 2D materials. However, the intrinsic interactions between 2D materials and ILs are rarely addressed. This work studies the intersystem Coulomb interactions in IL-functionalized InSe field-effect transistors by displacement current measurements. We uncover a strong self-gating effect that yields a 50-fold enhancement in interfacial capacitance, reaching 550 nF/cm2 in the maximum. Moreover, we reveal the IL-phase-dependent transport characteristics, including the channel current, carrier mobility, and density, substantiating the self-gating at the InSe/IL interface. The dominance of self-gating in the rubber phase is attributed to the correlation between the intra- and intersystem Coulomb interactions, further confirmed by Raman spectroscopy. This study provides insights into the capacitive coupling at the InSe/IL interface, paving the way to developing liquid/2D material hybrid devices.

A Review on Low-Dimensional Nanomaterials: Nanofabrication, Characterization and Applications.

The development of modern cutting-edge technology relies heavily on the huge success and advancement of nanotechnology, in which nanomaterials and nanostructures provide the indispensable material cornerstone. Owing to their nanoscale dimensions with possible quantum limit, nanomaterials and nanostructures possess a high surface-to-volume ratio, rich surface/interface effects, and distinct physical and chemical properties compared with their bulk counterparts, leading to the remarkably expanded horizons of their applications. Depending on their degree of spatial quantization, low-dimensional nanomaterials are generally categorized into nanoparticles (0D); nanorods, nanowires, and nanobelts (1D); and atomically thin layered materials (2D). This review article provides a comprehensive guide to low-dimensional nanomaterials and nanostructures. It begins with the classification of nanomaterials, followed by an inclusive account of nanofabrication and characterization. Both top-down and bottom-up fabrication approaches are discussed in detail. Next, various significant applications of low-dimensional nanomaterials are discussed, such as photonics, sensors, catalysis, energy storage, diverse coatings, and various bioapplications. This article would serve as a quick and facile guide for scientists and engineers working in the field of nanotechnology and nanomaterials.

Ferroelectric 2D ice under graphene confinement.

We here report on the direct observation of ferroelectric properties of water ice in its 2D phase. Upon nanoelectromechanical confinement between two graphene layers, water forms a 2D ice phase at room temperature that exhibits a strong and permanent dipole which depends on the previously applied field, representing clear evidence for ferroelectric ordering. Characterization of this permanent polarization with respect to varying water partial pressure and temperature reveals the importance of forming a monolayer of 2D ice for ferroelectric ordering which agrees with ab-initio and molecular dynamics simulations conducted. The observed robust ferroelectric properties of 2D ice enable novel nanoelectromechanical devices that exhibit memristive properties. A unique bipolar mechanical switching behavior is observed where previous charging history controls the transition voltage between low-resistance and high-resistance state. This advance enables the realization of rugged, non-volatile, mechanical memory exhibiting switching ratios of 106, 4 bit storage capabilities and no degradation after 10,000 switching cycles.

Graphene quantum Hall effect parallel resistance arrays.

As first recognized in 2010, epitaxial graphene on SiC(0001) provides a platform for quantized Hall resistance (QHR) metrology unmatched by other two-dimensional structures and materials. Here we report graphene parallel QHR arrays, with metrologically precise quantization near 1000 Ω. These arrays have tunable carrier densities, due to uniform epitaxial growth and chemical functionalization, allowing quantization at the robust ν = 2 filling factor in array devices at relative precision better than 10-8. Broad tunability of the carrier density also enables investigation of the ν = 6 plateau. Optimized networks of QHR devices described in this work suppress Ohmic contact resistance error using branched contacts and avoid crossover leakage with interconnections that are superconducting for quantizing magnetic fields up to 13.5 T. Our work enables more direct scaling of resistance for quantized values in arrays of arbitrary network geometry.

Onsager-Casimir frustration from resistance anisotropy in graphene quantum Hall devices.

We report on nonreciprocity observations in several configurations of graphene-based quantum Hall devices. Two distinct measurement configurations were adopted to verify the universality of the observations (i.e., two-terminal arrays and four-terminal devices). Our findings determine the extent to which epitaxial graphene anisotropies contribute to the observed asymmetric Hall responses. The presence of backscattering induces a device-dependent asymmetry rendering the Onsager-Casimir relations limited in their capacity to describe the behavior of such devices, except in the low-field classical regime and the fully quantized Hall state. The improved understanding of this quantum electrical process broadly limits the applicability of the reciprocity principle in the presence of quantum phase transitions and for anisotropic two-dimensional materials.

Highly sensitive broadband binary photoresponse in gateless epitaxial graphene on 4H-SiC.

Due to weak light-matter interaction, standard chemical vapor deposition (CVD)/exfoliated single-layer graphene-based photodetectors show low photoresponsivity (on the order of mA/W). However, epitaxial graphene (EG) offers a more viable approach for obtaining devices with good photoresponsivity. EG on 4H-SiC also hosts an interfacial buffer layer (IBL), which is the source of electron carriers applicable to quantum optoelectronic devices. We utilize these properties to demonstrate a gate-free, planar EG/4H-SiC-based device that enables us to observe the positive photoresponse for (405-532) nm and negative photoresponse for (632-980) nm laser excitation. The broadband binary photoresponse mainly originates from the energy band alignment of the IBL/EG interface and the highly sensitive work function of the EG. We find that the photoresponsivity of the device is > 10 A/W under 405 nm of power density 7.96 mW/cm2 at 1 V applied bias, which is three orders of magnitude greater than the obtained values of CVD/exfoliated graphene and higher than the required value for practical applications. These results path the way for selective light-triggered logic devices based on EG and can open a new window for broadband photodetection.

Rational design of hetero-dimensional C-ZnO/MoS2 nanocomposite anchored on 3D mesoporous carbon framework towards synergistically enhanced stability and efficient visible-light-driven photocatalytic activity.

For efficient solar energy harvesting, various engineering strategies to strengthen visible-light responsivity of ZnO photocatalyst is under intensive investigation. In this work, a new ternary C-ZnO/MoS2/mesoporous carbon nanocomposite was successfully prepared by a two-step solution-processed synthesis protocol. The ternary composite exhibits a well-interconnected 3D mesoporous microstructure assembled by carbon nanosheets, which is loaded with quasi 0D ZnO nanoparticles and 2D MoS2 nanosheets. The carbonaceous nanocomposites show enhanced visible-light-driven photocatalytic performance and high photo-corrosion resistance. The incorporation of carbon in the hybrid design has manifold benefits that drastically promotes the photoactivity and photostability. The significant enhancement in photodegradation activity of the hybrid catalysts can be ascribed to a few positive synergistic effects, such as increased surface area and active reaction sites, boosted surface charge utilization efficiency, and band-gap lowering. The high porosity of the distinct microstructure raises the dye adsorption within the material. Tailored interface/surface properties enable more effective mass transport and higher separation efficiency of photo-generated carriers. The modulated electronic structure leads to the narrowing of the ZnO optical bandgap. Meanwhile, coupling with carbon prevents ZnO from photo-corrosion. Our approach highlights the roles of carbon as structure directing and stabilizing agents as well as heteroatom in defect engineering for wide band-gap oxide materials. The rational material design of multivariate mixed-dimensional architecture also provides guiding insight for the advancement of heterogeneous photocatalyst materials with superior performance and durability. The presented engineering strategy would be a promising method for the preparation of nanomaterials supported on 3D carbon network with high porosity and visible-light-driven photocatalytic performance.

Magnetotransport in hybrid InSe/monolayer graphene on SiC.

The magnetotransport properties of a hybrid InSe/monolayer graphene in a SiC system are systematically studied. Compared to those of its bare graphene counterpart, in InSe/graphene, we can effectively modify the carrier density, mobility, effective mass, and electron-electron (e-e) interactions enhanced by weak disorder. We show that in bare graphene and hybrid InSe/graphene systems, the logarithmic temperature (lnT) dependence of the Hall slope R H = Î´R xy /δB = Î´ρ xy /δB can be used to probe e-e interaction effects at various temperatures even when the measured resistivity does not show a lnT dependence due to strong electron-phonon scattering. Nevertheless, one needs to be certain that the change of R H is not caused by an increase of the carrier density by checking the magnetic field position of the longitudinal resistivity minimum at different temperatures. Given the current challenges in gating graphene on SiC with a suitable dielectric layer, our results suggest that capping a van der Waals material on graphene is an effective way to modify the electronic properties of monolayer graphene on SiC.

Development of gateless quantum Hall checkerboard p-n junction devices.

Measurements of fractional multiples of the ν = 2 plateau quantized Hall resistance (R H ≈ 12906 Ω) were enabled by the utilization of multiple current terminals on millimetre-scale graphene p-n junction devices fabricated with interfaces along both lateral directions. These quantum Hall resistance checkerboard devices have been demonstrated to match quantized resistance outputs numerically calculated with the LTspice circuit simulator. From the devices' functionality, more complex embodiments of the quantum Hall resistance checkerboard were simulated to highlight the parameter space within which these devices could operate. Moreover, these measurements suggest that the scalability of p-n junction fabrication on millimetre or centimetre scales is feasible with regards to graphene device manufacturing by using the far more efficient process of standard ultraviolet lithography.

2D CTAB-MoSe2 Nanosheets and 0D MoSe2 Quantum Dots: Facile Top-Down Preparations and Their Peroxidase-Like Catalytic Activity for Colorimetric Detection of Hydrogen Peroxide.

We report the facile and economic preparation of two-dimensional (2D) and 0D MoSe2 nanostructures based on systematic and non-toxic top-down strategies. We demonstrate the intrinsic peroxidase-like activity of these MoSe2 nanostructures. The catalytic processes begin with facilitated decomposition of H2O2 by using MoSe2 nanostructures as peroxidase mimetics. In turn, a large amount of generated radicals oxidizes 3,3,5,5-tetramethylbenzidine (TMB) to produce a visible color reaction. The enzymatic kinetics of our MoSe2 nanostructures complies with typical Michaelis-Menten theory. Catalytic kinetics study reveals a ping-pong mechanism. Moreover, the primary radical responsible for the oxidation of TMB was identified to be È®2- by active species-trapping experiments. Based on the peroxidase mimicking property, we developed a new colorimetric method for H2O2 detection by using 2D and 0D MoSe2 nanostructures. It is shown that the colorimetric sensing capability of our MoSe2 catalysts is comparable to other 2D materials-based colorimetric platforms. For instance, the linear range of H2O2 detection is between 10 and 250 µM by using 2D functionalized MoSe2 nanosheets as an artificial enzyme. Our work develops a systematic approach to use 2D materials to construct novel enzyme-free mimetic for a visual assay of H2O2, which has promising prospects in medical diagnosis and food security monitoring.

Unprecedented random lasing in 2D organolead halide single-crystalline perovskite microrods.

Three-dimensional organic-inorganic hybrid halide perovskites have been demonstrated as great materials for applications in optoelectronics and photonics. However, their inherent instabilities in the presence of moisture, light, and heat may hinder their commercialization. Alternatively, emerging two-dimensional (2D) organic-inorganic hybrid perovskites have recently attracted increasing attention owing to their great environmental stability and inherent natural quantum-well structure. In this work, we have synthesized a high-quality long-chain organic diammonium spacer assisted 2D hybrid perovskite FA-(N-MPDA)PbBr4 (FA = formamidinium and N-MPDA = N-methylpropane-1,3-diammonium) by the slow evaporation at constant temperature method. The millimeter-sized single-crystalline microrods demonstrate low threshold random lasing behavior at room temperature. The single-crystalline 2D hybrid perovskite random laser achieved a very narrow linewidth (∼0.1 nm) with a low threshold (∼0.5 µJ cm-2) and a high quality factor (∼5350). Furthermore, the 2D hybrid microrod laser shows stable lasing emission with no measurable degradation after at least 2 h under continuous illumination, which substantially proves the stability of 2D perovskites. Our results demonstrate the promise of 2D organic-inorganic microrod-shaped perovskites and provide an important step toward the realization of high-performance optoelectronic devices.

Berezinskii-Kosterlitz-Thouless transition in an Al superconducting nanofilm grown on GaAs by molecular beam epitaxy.

We have performed extensive transport experiments on a 4 nm thick aluminum (Al) superconducting film grown on a GaAs substrate by molecular beam epitaxy (MBE). Nonlinear current-voltage (I-V) measurements on such a MBE-grown superconducting nanofilm show that V âˆ¼ I 3, which is evidence for the Berezinskii-Kosterlitz-Thouless (BKT) transition, both in the low-voltage (T BKT ≈ 1.97 K) and high-voltage regions (T BKT ≈ 2.17 K). In order to further study the two regions where the I-V curves are BKT-like, our experimental data are fitted to the temperature-induced vortices/antivortices unbinding model as well as the dynamical scaling theory. It is found that the transition temperature obtained in the high-voltage region is the correct T BKT as confirmed by fitting the data to the aforementioned models. Our experimental results unequivocally show that I-V measurements alone may not allow one to determine T BKT for superconducting transition. Therefore, one should try to fit one's results to the temperature-induced vortices/antivortices unbinding model and the dynamical scaling theory to accurately determine T BKT in a two-dimensional superconductor.