SnS Quantum Dots Enhancing Carbon-Based Hole Transport Layer-Free Visible Photodetectors.

The recombination of charges and thermal excitation of carriers at the interface between methylammonium lead iodide perovskite (PVK) and the carbon electrode are crucial factors that affect the optoelectronic performance of carbon-based hole transport layer (HTL)-free perovskite photodetectors. In this work, a method was employed to introduce SnS quantum dots (QDs) on the back surface of perovskite, which passivated the defect states on the back surface of perovskite and addressed the energy-level mismatch issue between perovskite and carbon electrode. Performance testing of the QDs and the photodetector revealed that SnS QDs possess energy-level structures that are well matched with perovskite and have high absorption coefficients. The incorporation of these QDs into the interface layer effectively suppresses the dark current of the photodetector and greatly enhances the utilization of incident light. The experimental results demonstrate that the introduction of SnS QDs reduces the dark current by an order of magnitude compared to the pristine device at 0 V bias and increases the responsivity by 10%. The optimized photodetector exhibits a wide spectral response range (350 nm to 750 nm), high responsivity (0.32 A/W at 500 nm), and high specific detectivity (>1 × 1012 Jones).

Interfacial passivation of CsPbI3 quantum dots improves the performance of hole-transport-layer-free perovskite photodetectors.

Photodetectors (PDs) suffer from dark current due to defects in the perovskite photosensitive layer. Contact between the photosensitive layer and carbon electrodes could result in recombination of carriers at the interface. In this work, CsPbI3 quantum dots (QDs) were added between the photosensitive layer and the carbon electrode as the interfacial layer to passivate the surface defects of perovskite layer and improve the energy level matching at the interface. The effect of QDs concentrations on the passivation of the perovskite layer was investigated. It was found that the photoluminescence intensity of perovskite films was the strongest and the decay lifetime was the longest when the QDs concentration was 3 mg/mL. Owing to QDs passivation, the dark current of perovskite PD decreased by 94% from [Formula: see text] to [Formula: see text] A. The responsivity (R) at 605 nm improved by 27% from 0.29 to 0.37 A/W at 0 V bias voltage. The specific detectivity (D*) increased by 420% from [Formula: see text] to [Formula: see text] Jones.