Solar-blind photodetectors for harsh electronics.

We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as ~ 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 10(13) cm(-2) of 2-MeV proton fluences for AlN metal-semiconductor-metal (MSM) PDs. Moreover, the AlN PDs show a photoresponse time as fast as ~ 110 ms (the rise time) and ~ 80 ms (the fall time) at 5 V bias. The results demonstrate that AlN MSM PDs hold high potential in next-generation deep ultraviolet PDs for use in harsh environments.

An efficient broadband and omnidirectional light-harvesting scheme employing a hierarchical structure based on a ZnO nanorod/Si3N4-coated Si microgroove on 5-inch single crystalline Si solar cells.

We employ a ZnO nanorod/Si(3)N(4)-coated Si microgroove-based hierarchical structure (HS) for a light-harvesting scheme in 5 inch single crystalline Si solar cells. ZnO nanorods and Si microgrooves were fabricated by a simple and scalable aqueous process. The excellent light-harvesting characteristics of the HS, such as broadband working ranges and omnidirectionality have been demonstrated using external quantum efficiencies and reflectance measurements. The solar cells with the hierarchical surface exhibit excellent photovoltaic characteristics, i.e., a short-circuit current (J(SC)) of 38.45 mA cm(-2), open-circuit voltage of 609 mV and conversion efficiency of 14.04%. As incident angles increase from 0° to 60°, only 5.3% J(SC) loss is achieved by employing the hierarchical surface, demonstrating the enhanced omnidirectional photovoltaic performances, also confirmed by the theoretical analysis. A viable scheme for broadband and omnidirectional light harvesting using the HS employing microscale/nanoscale surface textures on single crystalline Si solar cells has been demonstrated.

Ultra-high-responsivity broadband detection of Si metal-semiconductor-metal Schottky photodetectors improved by ZnO nanorod arrays.

This study describes a strategy for developing ultra-high-responsivity broadband Si-based photodetectors (PDs) using ZnO nanorod arrays (NRAs). The ZnO NRAs grown by a low-temperature hydrothermal method with large growth area and high growth rate absorb the photons effectively in the UV region and provide refractive index matching between Si and air for the long-wavelength region, leading to 3 and 2 orders of magnitude increase in the responsivity of Si metal-semiconductor-metal PDs in the UV and visible/NIR regions, respectively. Significantly enhanced performances agree with the theoretical analysis based on the finite-difference time-domain method. These results clearly demonstrate that Si PDs combined with ZnO NRAs hold high potential in next-generation broadband PDs.

Er-doped ZnO nanorod arrays with enhanced 1540 nm emission by employing Ag island films and high-temperature annealing.

Single-crystalline Er-doped ZnO nanorod arrays (NRAs) on Ag island films with appropriate annealing show a promising enhancement of 1540 nm emission for optical communication. The enhanced 1540 nm emission of Er-doped ZnO NRAs is attributed to the enhancement of the deep level emission of ZnO host. In an effort to enhance deep level emission to pump Er(3+) emission at 1540 nm in the Er-doped ZnO NRAs, surface plasmon coupling and increase in deep level states were carried out via Ag island films and high-temperature annealing. This study points to the effective methods to enhance 1540 nm emission, demonstrating that ZnO NRAs with Ag islands have a promising potential for the application in optical communications.