Deterministic Loading of Microwaves onto an Artificial Atom Using a Time-Reversed Waveform.

Loading quantum information deterministically onto a quantum node is an important step toward a quantum network. Here, we demonstrate that coherent-state microwave photons with an optimal temporal waveform can be efficiently loaded onto a single superconducting artificial atom in a semi-infinite one-dimensional (1D) transmission-line waveguide. Using a weak coherent state (the number of photons (N) contained in the pulse ≪1) with an exponentially rising waveform, whose time constant matches the decoherence time of the artificial atom, we demonstrate a loading efficiency of 94.2% ± 0.7% from 1D semifree space to the artificial atom. The high loading efficiency is due to time-reversal symmetry: the overlap between the incoming wave and the time-reversed emitted wave is up to 97.1% ± 0.4%. Our results open up promising applications in realizing quantum networks based on waveguide quantum electrodynamics.

Electron shelving of a superconducting artificial atom.

Interfacing long-lived qubits with propagating photons is a fundamental challenge in quantum technology. Cavity and circuit quantum electrodynamics (cQED) architectures rely on an off-resonant cavity, which blocks the qubit emission and enables a quantum non-demolition (QND) dispersive readout. However, no such buffer mode is necessary for controlling a large class of three-level systems that combine a metastable qubit transition with a bright cycling transition, using the electron shelving effect. Here we demonstrate shelving of a circuit atom, fluxonium, placed inside a microwave waveguide. With no cavity modes in the setup, the qubit coherence time exceeds 50 µs, and the cycling transition's radiative lifetime is under 100 ns. By detecting a homodyne fluorescence signal from the cycling transition, we implement a QND readout of the qubit and account for readout errors using a minimal optical pumping model. Our result establishes a resource-efficient (cavityless) alternative to cQED for controlling superconducting qubits.

The superconducting quasicharge qubit.

The non-dissipative nonlinearity of Josephson junctions1 converts macroscopic superconducting circuits into artificial atoms2, enabling some of the best-controlled qubits today3,4. Three fundamental types of superconducting qubit are known5, each reflecting a distinct behaviour of quantum fluctuations in a Cooper pair condensate: single-charge tunnelling (charge qubit6,7), single-flux tunnelling (flux qubit8) and phase oscillations (phase qubit9 or transmon10). Yet, the dual nature of charge and flux suggests that circuit atoms must come in pairs. Here we introduce the missing superconducting qubit, 'blochnium', which exploits a coherent insulating response of a single Josephson junction that emerges from the extension of phase fluctuations beyond 2π (refs. 11-14). Evidence for such an effect has been found in out-of-equilibrium direct-current transport through junctions connected to high-impedance leads15-19, although a full consensus on the existence of extended phase fluctuations is so far absent20-22. We shunt a weak junction with an extremely high inductance-the key technological innovation in our experiment-and measure the radiofrequency excitation spectrum as a function of external magnetic flux through the resulting loop. The insulating character of the junction is manifested by the vanishing flux sensitivity of the qubit transition between the ground state and the first excited state, which recovers rapidly for transitions to higher-energy states. The spectrum agrees with a duality mapping of blochnium onto a transmon, which replaces the external flux by the offset charge and introduces a new collective quasicharge variable instead of the superconducting phase23,24. Our findings may motivate the exploration of macroscopic quantum dynamics in ultrahigh-impedance circuits, with potential applications in quantum computing and metrology.

Asymmetric 3D Elastic-Plastic Strain-Modulated Electron Energy Structure in Monolayer Graphene by Laser Shocking.

Graphene has a great potential to replace silicon in prospective semiconductor industries due to its outstanding electronic and transport properties; nonetheless, its lack of energy bandgap is a substantial limitation for practical applications. To date, straining graphene to break its lattice symmetry is perhaps the most efficient approach toward realizing bandgap tunability in graphene. However, due to the weak lattice deformation induced by uniaxial or in-plane shear strain, most strained graphene studies have yielded bandgaps <1 eV. In this work, a modulated inhomogeneous local asymmetric elastic-plastic straining is reported that utilizes GPa-level laser shocking at a high strain rate (dε/dt) ≈ 106 -107 s-1 , with excellent formability, inducing tunable bandgaps in graphene of up to 2.1 eV, as determined by scanning tunneling spectroscopy. High-resolution imaging and Raman spectroscopy reveal strain-induced modifications to the atomic and electronic structure in graphene and first-principles simulations predict the measured bandgap openings. Laser shock modulation of semimetallic graphene to a semiconducting material with controllable bandgap has the potential to benefit the electronic and optoelectronic industries.

Demonstration of Protection of a Superconducting Qubit from Energy Decay.

Long-lived transitions occur naturally in atomic systems due to the abundance of selection rules inhibiting spontaneous emission. By contrast, transitions of superconducting artificial atoms typically have large dipoles, and hence their lifetimes are determined by the dissipative environment of a macroscopic electrical circuit. We designed a multilevel fluxonium artificial atom such that the qubit's transition dipole can be exponentially suppressed by flux tuning, while it continues to dispersively interact with a cavity mode by virtual transitions to the noncomputational states. Remarkably, energy decay time T_{1} grew by 2 orders of magnitude, proportionally to the inverse square of the transition dipole, and exceeded the benchmark value of T_{1}>2 ms (quality factor Q_{1}>4×10^{7}) without showing signs of saturation. The dephasing time was limited by the first-order coupling to flux noise to about 4 µs. Our circuit validated the general principle of hardware-level protection against bit-flip errors and can be upgraded to the 0-π circuit [P. Brooks, A. Kitaev, and J. Preskill, Phys. Rev. A 87, 052306 (2013)PLRAAN1050-294710.1103/PhysRevA.87.052306], adding protection against dephasing and certain gate errors.

Suppression of the Berezinskii-Kosterlitz-Thouless transition in 2D superconductors by macroscopic quantum tunneling.

The evolution with thickness of the properties of quench-deposited homogeneous amorphous bismuth (a-Bi) thin films with a 14.67 Å amorphous antimony (a-Sb) underlayer has been studied. In contrast with the results of previous investigations on similar systems the transition between the insulating and superconducting regimes is not direct, but involves an intervening metallic regime over a range of thicknesses. For these metallic films the temperature dependencies of the resistances at temperatures above the metallic regime can be described by the Halperin-Nelson form suggesting the occurrence of a Berezinskii-Kosterlitz-Thouless (BKT) transition at lower temperatures. However, this transition never occurs as curves of R(T) flatten out as temperature is reduced. We suggest that this phenomenon is evidence of a crossover between a classical regime of thermal vortex unbinding at high temperatures and a regime of macroscopic quantum tunneling at low temperatures. The latter prevents the BKT transition from occurring.

Magnetic-field-tuned quantum phase transition in the insulating regime of ultrathin amorphous Bi films.

A surprisingly strong variation of resistance with a perpendicular magnetic field, and a peak in the resistance versus field, R(B) has been found in insulating films of a sequence of homogeneous, quench-condensed films of amorphous Bi undergoing a thickness-tuned superconductor-insulator transition. Isotherms of magnetoresistance, rather than resistance, versus field were found to cross at a well-defined magnetic field higher than the field corresponding to the peak in R(B). For all values of B, R(T) was found to obey an Arrhenius form. At the crossover magnetic field the prefactor became equal to the quantum resistance of electron pairs h/4e², and the activation energy returned to its zero-field value. These observations suggest that the crossover is the signature of a quantum phase transition between two distinct insulating ground states, tuned by magnetic field.