A CMOS-integrated terahertz near-field sensor based on an ultra-strongly coupled meta-atom.

Recently, plasmonic-based sensors operating in the terahertz frequency range have emerged as perspective tools for rapid and efficient label-free biosensing applications. In this work, we present a fully electronic approach allowing us to achieve state-of-the-art sensitivity by utilizing a near-field-coupled electronic sensor. We demonstrate that the proposed concept enables the efficient implementation and probing of a so-called ultra-strongly coupled sub-wavelength meta-atom as well as a single resonant circuit, allowing to limit the volume of material under test down to a few picoliter range. The sensor has been monolithically integrated into a cost-efficient silicon-based CMOS technology. Our findings are supported by both numerical and analytical models and validated through experiments. They lay the groundwork for near-future developments, outlining the perspectives for a terahertz microfluidic lab-on-chip dielectric spectroscopy sensor.

600-GHz Fourier imaging based on heterodyne detection at the 2nd sub-harmonic.

Fourier imaging is an indirect imaging method which records the diffraction pattern of the object scene coherently in the focal plane of the imaging system and reconstructs the image using computational resources. The spatial resolution, which can be reached, depends on one hand on the wavelength of the radiation, but also on the capability to measure - in the focal plane - Fourier components with high spatial wave-vectors. This leads to a conflicting situation at THz frequencies, because choosing a shorter wavelength for better resolution usually comes at the cost of less radiation power, concomitant with a loss of dynamic range, which limits the detection of higher Fourier components. Here, aiming at maintaining a high dynamic range and limiting the system costs, we adopt heterodyne detection at the 2nd sub-harmonic, working with continuous-wave (CW) radiation for object illumination at 600 GHz and local-oscillator (LO) radiation at 300 GHz. The detector is a single-pixel broad-band Si CMOS TeraFET equipped with substrate lenses on both the front- and backside for separate in-coupling of the waves. The entire scene is illuminated by the object wave, and the Fourier spectrum is recorded by raster scanning of the single-detector unit through the focal plane. With only 56 µW of power of the 600-GHz radiation, a dynamic range of 60 dB is reached, sufficient to detect the entire accessible Fourier space spectrum in the test measurements. We present a detailed comparison between plane-to-plane imaging and Fourier imaging, and show that, with both, a lateral spatial resolution of better than 0.5 mm, at the diffraction limit, is reached.

Sub-terahertz feedback interferometry and imaging with emitters in 130 nm BiCMOS technology.

In this work, we present the effect of self-mixing in compact terahertz emitters implemented in a 130 nm SiGe BiCMOS technology. The devices are based on a differential Colpitts oscillator topology with optimized emission frequency at the fundamental harmonic. The radiation is out-coupled through the substrate side using a hyper-hemispheric silicon lens. The first source is optimized for 200 GHz and radiates up to 0.525 mW of propagating power. The second source emits up to 0.325 mW at 260 GHz. We demonstrate that in these devices, feedback radiation produces the change in bias current, the magnitude of which can reach up to several percent compared to the bias current itself, enabling feedback interferometric measurements. We demonstrate the applicability of feedback interferometry to perform coherent reflection-type raster-scan imaging.

Terahertz structured light: nonparaxial Airy imaging using silicon diffractive optics.

Structured light - electromagnetic waves with a strong spatial inhomogeneity of amplitude, phase, and polarization - has occupied far-reaching positions in both optical research and applications. Terahertz (THz) waves, due to recent innovations in photonics and nanotechnology, became so robust that it was not only implemented in a wide variety of applications such as communications, spectroscopic analysis, and non-destructive imaging, but also served as a low-cost and easily implementable experimental platform for novel concept illustration. In this work, we show that structured nonparaxial THz light in the form of Airy, Bessel, and Gaussian beams can be generated in a compact way using exclusively silicon diffractive optics prepared by femtosecond laser ablation technology. The accelerating nature of the generated structured light is demonstrated via THz imaging of objects partially obscured by an opaque beam block. Unlike conventional paraxial approaches, when a combination of a lens and a cubic phase (or amplitude) mask creates a nondiffracting Airy beam, we demonstrate simultaneous lensless nonparaxial THz Airy beam generation and its application in imaging system. Images of single objects, imaging with a controllable placed obstacle, and imaging of stacked graphene layers are presented, revealing hence potential of the approach to inspect quality of 2D materials. Structured nonparaxial THz illumination is investigated both theoretically and experimentally with appropriate extensive benchmarks. The structured THz illumination consistently outperforms the conventional one in resolution and contrast, thus opening new frontiers of structured light applications in imaging and inverse scattering problems, as it enables sophisticated estimates of optical properties of the investigated structures.

Characterization of Silver Nanowire Layers in the Terahertz Frequency Range.

Thin layers of silver nanowires are commonly studied for transparent electronics. However, reports of their terahertz (THz) properties are scarce. Here, we present the electrical and optical properties of thin silver nanowire layers with increasing densities at THz frequencies. We demonstrate that the absorbance, transmittance and reflectance of the metal nanowire layers in the frequency range of 0.2 THz to 1.3 THz is non-monotonic and depends on the nanowire dimensions and filling factor. We also present and validate a theoretical approach describing well the experimental results and allowing the fitting of the THz response of the nanowire layers by a Drude-Smith model of conductivity. Our results pave the way toward the application of silver nanowires as a prospective material for transparent and conductive coatings, and printable antennas operating in the terahertz range-significant for future wireless communication devices.

All-Electronic Emitter-Detector Pairs for 250 GHz in Silicon.

The spread of practical terahertz (THz) systems dedicated to the telecommunication, pharmacy, civil security, or medical markets requires the use of mainstream semiconductor technologies, such as complementary metal-oxide-semiconductor (CMOS) lines. In this paper, we discuss the operation of a CMOS-based free space all-electronic system operating near 250 GHz, exhibiting signal-to-noise ratio (SNR) with 62 dB in the direct detection regime for one Hz equivalent noise bandwidth. It combines the state-of-the-art detector based on CMOS field-effect-transistors (FET) and a harmonic voltage-controlled oscillator (VCO). Three generations of the oscillator circuit are presented, and the performance characterization techniques and their improvement are explained in detail. The manuscript presents different emitter-detector pair operation modalities, including spectroscopy and imaging.

Roadmap of Terahertz Imaging 2021.

In this roadmap article, we have focused on the most recent advances in terahertz (THz) imaging with particular attention paid to the optimization and miniaturization of the THz imaging systems. Such systems entail enhanced functionality, reduced power consumption, and increased convenience, thus being geared toward the implementation of THz imaging systems in real operational conditions. The article will touch upon the advanced solid-state-based THz imaging systems, including room temperature THz sensors and arrays, as well as their on-chip integration with diffractive THz optical components. We will cover the current-state of compact room temperature THz emission sources, both optolectronic and electrically driven; particular emphasis is attributed to the beam-forming role in THz imaging, THz holography and spatial filtering, THz nano-imaging, and computational imaging. A number of advanced THz techniques, such as light-field THz imaging, homodyne spectroscopy, and phase sensitive spectrometry, THz modulated continuous wave imaging, room temperature THz frequency combs, and passive THz imaging, as well as the use of artificial intelligence in THz data processing and optics development, will be reviewed. This roadmap presents a structured snapshot of current advances in THz imaging as of 2021 and provides an opinion on contemporary scientific and technological challenges in this field, as well as extrapolations of possible further evolution in THz imaging.

Sensitivity of Field-Effect Transistor-Based Terahertz Detectors.

This paper presents an overview of the different methods used for sensitivity (i.e., responsivity and noise equivalent power) determination of state-of-the-art field-effect transistor-based THz detectors/sensors. We point out that the reported result may depend very much on the method used to determine the effective area of the sensor, often leading to discrepancies of up to orders of magnitude. The challenges that arise when selecting a proper method for characterisation are demonstrated using the example of a 2×7 detector array. This array utilises field-effect transistors and monolithically integrated patch antennas at 620 GHz. The directivities of the individual antennas were simulated and determined from the measured angle dependence of the rectified voltage, as a function of tilting in the E- and H-planes. Furthermore, this study shows that the experimentally determined directivity and simulations imply that the part of radiation might still propagate in the substrate, resulting in modification of the sensor effective area. Our work summarises the methods for determining sensitivity which are paving the way towards the unified scientific metrology of FET-based THz sensors, which is important for both researchers competing for records, potential users, and system designers.

Antenna-coupled field-effect transistors as detectors for terahertz near-field microscopy.

We report the successful implementation of antenna-coupled terahertz field-effect transistors (TeraFETs) as homodyne detectors in a scattering-type scanning near-field optical microscope (s-SNOM) operating with radiation at 246.5 GHz. The devices were fabricated in Si CMOS foundry technology with two different technologies, a 90 nm process, which provides a better device performance, and a less expensive 180 nm one. The high sensitivity enables s-SNOM demodulation at up to the 10th harmonic of the cantilever's oscillation frequency. While we demonstrate application of TeraFETs at a fixed radiation frequency, this type of detector device is able to cover the entire THz frequency range.

Hyperspectral terahertz imaging with electro-optic dual combs and a FET-based detector.

In this paper, a terahertz hyperspectral imaging architecture based on an electro-optic terahertz dual-comb source is presented and demonstrated. In contrast to single frequency sources, this multi-heterodyne system allows for the characterization of the whole spectral response of the sample in parallel for all the frequency points along the spectral range of the system. This hence provides rapid, highly consistent results and minimizes measurement artifacts. The terahertz illumination signal can be tailored (in spectral coverage and resolution) with high flexibility to meet the requirements of any particular application or experimental scenario while maximizing the signal-to-noise ratio of the measurement. Besides this, the system provides absolute frequency accuracy and a very high coherence that allows for direct signal detection without inter-comb synchronization mechanisms, adaptive acquisition, or post-processing. Using a field-effect transistor-based terahertz resonant 300 GHz detector and the raster-scanning method we demonstrate the two-dimensional hyperspectral imaging of samples of different kinds to illustrate the remarkable capabilities of this innovative architecture. A proof-of-concept demonstration has been performed in which tree leaves and a complex plastic fragment have been analyzed in the 300 GHz range with a frequency resolution of 10 GHz.

Passive Detection and Imaging of Human Body Radiation Using an Uncooled Field-Effect Transistor-Based THz Detector.

This work presents, to our knowledge, the first completely passive imaging with human-body-emitted radiation in the lower THz frequency range using a broadband uncooled detector. The sensor consists of a Si CMOS field-effect transistor with an integrated log-spiral THz antenna. This THz sensor was measured to exhibit a rather flat responsivity over the 0.1-1.5-THz frequency range, with values of the optical responsivity and noise-equivalent power of around 40 mA/W and 42 pW/ Hz , respectively. These values are in good agreement with simulations which suggest an even broader flat responsivity range exceeding 2.0 THz. The successful imaging demonstrates the impressive thermal sensitivity which can be achieved with such a sensor. Recording of a 2.3 × 7.5-cm 2 -sized image of the fingers of a hand with a pixel size of 1 mm 2 at a scanning speed of 1 mm/s leads to a signal-to-noise ratio of 2 and a noise-equivalent temperature difference of 4.4 K. This approach shows a new sensing approach with field-effect transistors as THz detectors which are usually used for active THz detection.

Silicon Field Effect Transistor as the Nonlinear Detector for Terahertz Autocorellators.

We demonstrate that the rectifying field effect transistor, biased to the subthreshold regime, in a large signal regime exhibits a super-linear response to the incident terahertz (THz) power. This phenomenon can be exploited in a variety of experiments which exploit a nonlinear response, such as nonlinear autocorrelation measurements, for direct assessment of intrinsic response time using a pump-probe configuration or for indirect calibration of the oscillating voltage amplitude, which is delivered to the device. For these purposes, we employ a broadband bow-tie antenna coupled Si CMOS field-effect-transistor-based THz detector (TeraFET) in a nonlinear autocorrelation experiment performed with picoseconds-scale pulsed THz radiation. We have found that, in a wide range of gate bias (above the threshold voltage V th = 445 mV), the detected signal follows linearly to the emitted THz power. For gate bias below the threshold voltage (at 350 mV and below), the detected signal increases in a super-linear manner. A combination of these response regimes allows for performing nonlinear autocorrelation measurements with a single device and avoiding cryogenic cooling.

Antenna-integrated 0.6 THz FET direct detectors based on CVD graphene.

We present terahertz (THz) detectors based on top-gated graphene field effect transistors (GFETs) with integrated split bow-tie antennas. The GFETs were fabricated using graphene grown by chemical vapor deposition (CVD). The THz detectors are capable of room-temperature rectification of a 0.6 THz signal and achieve a maximum optical responsivity better than 14 V/W and minimum optical noise-equivalent power (NEP) of 515 pW/Hz(0.5). Our results are a significant improvement over previous work on graphene direct detectors and are comparable to other established direct detector technologies. This is the first time room-temperature direct detection has been demonstrated using CVD graphene, which introduces the potential for scalable, wafer-level production of graphene detectors.

CMOS detector arrays in a virtual 10-kilopixel camera for coherent terahertz real-time imaging.

We demonstrate the principle applicability of antenna-coupled complementary metal oxide semiconductor (CMOS) field-effect transistor arrays as cameras for real-time coherent imaging at 591.4 GHz. By scanning a few detectors across the image plane, we synthesize a focal-plane array of 100×100 pixels with an active area of 20×20 mm2, which is applied to imaging in transmission and reflection geometries. Individual detector pixels exhibit a voltage conversion loss of 24 dB and a noise figure of 41 dB for 16 µW of the local oscillator (LO) drive. For object illumination, we use a radio-frequency (RF) source with 432 µW at 590 GHz. Coherent detection is realized by quasioptical superposition of the image and the LO beam with 247 µW. At an effective frame rate of 17 Hz, we achieve a maximum dynamic range of 30 dB in the center of the image and more than 20 dB within a disk of 18 mm diameter. The system has been used for surface reconstruction resolving a height difference in the µm range.