Implantable photonic neural probes with out-of-plane focusing grating emitters.

We have designed, fabricated, and characterized implantable silicon neural probes with nanophotonic grating emitters that focus the emitted light at a specified distance above the surface of the probe for spatially precise optogenetic targeting of neurons. Using the holographic principle, we designed gratings for wavelengths of 488 and 594 nm, targeting the excitation spectra of the optogenetic actuators Channelrhodopsin-2 and Chrimson, respectively. The measured optical emission pattern of these emitters in non-scattering medium and tissue matched well with simulations. To our knowledge, this is the first report of focused spots with the size scale of a neuron soma in brain tissue formed from implantable neural probes.

Photonic neural probe enabled microendoscopes for light-sheet light-field computational fluorescence brain imaging.

Significance: Light-sheet fluorescence microscopy is widely used for high-speed, high-contrast, volumetric imaging. Application of this technique to in vivo brain imaging in non-transparent organisms has been limited by the geometric constraints of conventional light-sheet microscopes, which require orthogonal fluorescence excitation and collection objectives. We have recently demonstrated implantable photonic neural probes that emit addressable light sheets at depth in brain tissue, miniaturizing the excitation optics. Here, we propose a microendoscope consisting of a light-sheet neural probe packaged together with miniaturized fluorescence collection optics based on an image fiber bundle for lensless, light-field, computational fluorescence imaging. Aim: Foundry-fabricated, silicon-based, light-sheet neural probes can be packaged together with commercially available image fiber bundles to form microendoscopes for light-sheet light-field fluorescence imaging at depth in brain tissue. Approach: Prototype microendoscopes were developed using light-sheet neural probes with five addressable sheets and image fiber bundles. Fluorescence imaging with the microendoscopes was tested with fluorescent beads suspended in agarose and fixed mouse brain tissue. Results: Volumetric light-sheet light-field fluorescence imaging was demonstrated using the microendoscopes. Increased imaging depth and enhanced reconstruction accuracy were observed relative to epi-illumination light-field imaging using only a fiber bundle. Conclusions: Our work offers a solution toward volumetric fluorescence imaging of brain tissue with a compact size and high contrast. The proof-of-concept demonstrations herein illustrate the operating principles and methods of the imaging approach, providing a foundation for future investigations of photonic neural probe enabled microendoscopes for deep-brain fluorescence imaging in vivo.

Implantable photonic neural probes with 3D-printed microfluidics and applications to uncaging.

Advances in chip-scale photonic-electronic integration are enabling a new generation of foundry-manufacturable implantable silicon neural probes incorporating nanophotonic waveguides and microelectrodes for optogenetic stimulation and electrophysiological recording in neuroscience research. Further extending neural probe functionalities with integrated microfluidics is a direct approach to achieve neurochemical injection and sampling capabilities. In this work, we use two-photon polymerization 3D printing to integrate microfluidic channels onto photonic neural probes, which include silicon nitride nanophotonic waveguides and grating emitters. The customizability of 3D printing enables a unique geometry of microfluidics that conforms to the shape of each neural probe, enabling integration of microfluidics with a variety of existing neural probes while avoiding the complexities of monolithic microfluidics integration. We demonstrate the photonic and fluidic functionalities of the neural probes via fluorescein injection in agarose gel and photoloysis of caged fluorescein in solution and in fixed brain tissue.

Microcantilever-integrated photonic circuits for broadband laser beam scanning.

Laser beam scanning is central to many applications, including displays, microscopy, three-dimensional mapping, and quantum information. Reducing the scanners to microchip form factors has spurred the development of very-large-scale photonic integrated circuits of optical phased arrays and focal plane switched arrays. An outstanding challenge remains to simultaneously achieve a compact footprint, broad wavelength operation, and low power consumption. Here, we introduce a laser beam scanner that meets these requirements. Using microcantilevers embedded with silicon nitride nanophotonic circuitry, we demonstrate broadband, one- and two-dimensional steering of light with wavelengths from 410 nm to 700 nm. The microcantilevers have ultracompact ~0.1 mm2 areas, consume ~31 to 46 mW of power, are simple to control, and emit a single light beam. The microcantilevers are monolithically integrated in an active photonic platform on 200-mm silicon wafers. The microcantilever-integrated photonic circuits miniaturize and simplify light projectors to enable versatile, power-efficient, and broadband laser scanner microchips.

Thermo-Optic Phase Shifter with Interleaved Suspended Design for Power Efficiency and Speed Adjustment.

Conventional thermo-optic devices-which can be broadly categorized to that with and without a thermal isolation trench-typically come with a tradeoff between thermal tuning efficiency and tuning speed. Here, we propose a method that allows us to directly define the tradeoff using a specially designed thermo-optic phase shifter with an interleaved isolation trench. With the design, the tuning efficiency and speed can be precisely tailored simply by controlling the duty ratio (suspended length over total heater length) of the suspended design. Phase shifters are one of the main components in photonic-integrated circuits, and having phase shifters with a flexible design approach may enable the wide adoption of photonic applications such as an optical neural network and LiDAR.

Power-efficient silicon nitride thermo-optic phase shifters for visible light.

We demonstrate power-efficient, thermo-optic, silicon nitride waveguide phase shifters for blue, green, and yellow wavelengths. The phase shifters operated with low power consumption due to a suspended structure and multi-pass waveguide design. The devices were fabricated on 200-mm silicon wafers using deep ultraviolet lithography as part of an active visible-light integrated photonics platform. The measured power consumption to achieve a π phase shift (averaged over multiple devices) was 0.78, 0.93, 1.09, and 1.20 mW at wavelengths of 445, 488, 532, and 561 nm, respectively. The phase shifters were integrated into Mach-Zehnder interferometer switches, and 10 - 90% rise(fall) times of about 570(590) µs were measured.

Two-dimensional multi-layered SiN-on-SOI optical phased array with wide-scanning and long-distance ranging.

Silicon based optoelectronic integrated optical phased array is attractive owing to large-dense integration, large scanning range and CMOS compatibility. In this paper, we design and fabricate a SiN-on-SOI two-dimensional optical phased array chip. We demonstrate a two-dimensional scanning range of 96°×14.4° and 690 mW peak power of the main lobe. Additionally, we set up the time of flight (ToF) and frequency-modulated continuous-wave (FMCW) ranging systems by using this optical phased array chip, and achieve the objects detection at the range of 20 m in the ToF system and 109 m in the FMCW system, respectively.

Investigation and demonstration of a high-power handling and large-range steering optical phased array chip.

The optical power handling of an OPA scanning beam determines its targeted detection distance. So far, a limited number of investigations have been conducted on the restriction of the beam power. To the best of our knowledge, we for the first time in this paper explore the ability of the silicon photonics based OPA circuit for the high power application. A 64-channel SiN-Si based one-dimensional (1D) OPA chip has been designed to handle high beam power to achieve large scanning range. The chip was fabricated on the standard silicon photonics platform. The main lobe power of our chip can reach 720 mW and its peak side-lobe level (PSLL) is -10.33 dB. We obtain a wide scanning range of 110° in the horizontal direction at 1550 nm wavelength, with a compressed longitudinal divergence angle of each scanning beam of 0.02°.

Thermal annealing study of the mid-infrared aluminum nitride on insulator (AlNOI) photonics platform.

Aluminum nitride on insulator (AlNOI) photonics platform has great potential for mid-infrared applications thanks to the large transparency window, piezoelectric property, and second-order nonlinearity of AlN. However, the deployment of AlNOI platform might be hindered by the high propagation loss. We perform thermal annealing study and demonstrate significant loss improvement in the mid-infrared AlNOI photonics platform. After thermal annealing at 400°C for 2 hours in ambient gas environment, the propagation loss is reduced by half. Bend loss and taper coupling loss are also investigated. The performance of multimode interferometer, directional coupler, and add/drop filter are improved in terms of insertion loss, quality factor, and extinction ratio. Fourier-transform infrared spectroscopy, Raman spectroscopy, and X-ray diffraction spectroscopy suggest the loss improvement is mainly attributed to the reduction of extinction coefficient in the silicon dioxide cladding. Apart from loss improvement, appropriate thermal annealing also helps in reducing thin film stress.

Broadband couplers for hybrid silicon-chalcogenide glass photonic integrated circuits.

We report on the design, fabrication and testing of three types of coupling structures for hybrid chalcogenide glass Ge23Sb7S70-Silicon (GeSbS-Si) photonic integrated circuit platforms. The first type is a fully etched GeSbS grating coupler defined directly in the GeSbS film. Coupling losses of 5.3 dB and waveguide-to-waveguide back-reflections of 3.4% were measured at a wavelength of 1553 nm. Hybrid GeSbS-to-Si butt couplers and adiabatic couplers transmitting light between GeSbS and Si single-mode waveguides were further developed. The hybrid butt couplers (HBCs) feature coupling losses of 2.7 dB and 9.2% back-reflection. The hybrid adiabatic couplers (HACs) exhibit coupling losses of 0.7 dB and negligible back-reflection. Both HBCs and HACs have passbands exceeding the 100 nm measurement range of the test setup. GeSbS grating couplers and GeSbS-to-Si waveguide couplers can be co-fabricated in the same process flow, providing, for example, a means to first couple high optical power levels required for nonlinear signal processing directly into GeSbS waveguides and to later transition into Si waveguides after attenuation of the pump. Moreover, GeSbS waveguides and HBC transitions have been fabricated on post-processed silicon photonics chips obtained from a commercially available foundry service, with a previously deposited 2 µm thick top waveguide cladding. This fabrication protocol demonstrates the compatibility of the developed integration scheme with standard silicon photonics technology with a complete back-end-of-line process.

Aluminum nitride on insulator (AlNOI) platform for mid-infrared photonics.

We report an aluminum nitride on insulator platform for mid-infrared (MIR) photonics applications beyond 3 µm. Propagation loss and bending loss are studied, while functional devices such as directional couplers, multimode interferometers, and add/drop filters are demonstrated with high performance. The complementary metal-oxide-semiconductor-compatible aluminum nitride offers advantages ranging from a large transparency window, high thermal and chemical resistance, to piezoelectric tunability and three-dimensional integration capability. This platform can have synergy with other photonics platforms to enable novel applications for sensing and thermal imaging in MIR.

Efficient and broadband subwavelength grating coupler for 3.7 µm mid-infrared silicon photonics integration.

A grating coupler is an essential building block for compact and flexible photonics integration. In order to meet the increasing demand of mid-infrared (MIR) integrated photonics for sensitive chemical/gas sensing, we report a silicon-on-insulator (SOI) based MIR subwavelength grating coupler (SWGC) operating in the 3.7 µm wavelength range. We provide the design guidelines of a uniform and apodized SWGC, followed by numerical simulations for design verification. We experimentally demonstrate both types of SWGC. The apodized SWGC enables high coupling efficiency of -6.477 dB/facet with 3 dB bandwidth of 199 nm, whereas the uniform SWGC shows larger 3dB bandwidth of 263.5 nm but slightly lower coupling efficiency of -7.371 dB/facet.

Wavelength-Flattened Directional Coupler Based Mid-Infrared Chemical Sensor Using Bragg Wavelength in Subwavelength Grating Structure.

In this paper, we report a compact wavelength-flattened directional coupler (WFDC) based chemical sensor featuring an incorporated subwavelength grating (SWG) structure for the mid-infrared (MIR). By incorporating a SWG structure into directional coupler (DC), the dispersion in DC can be engineered to allow broadband operation which is advantageous to extract spectroscopic information for MIR sensing analysis. Meanwhile, the Bragg reflection introduced by the SWG structure produces a sharp trough at the Bragg wavelength. This sharp trough is sensitive to the surrounding refractive index (RI) change caused by the existence of analytes. Therefore, high sensitivity can be achieved in a small footprint. Around fivefold enhancement in the operation bandwidth compared to conventional DC is achieved for 100% coupling efficiency in a 40 µm long WFDC experimentally. Detection of dichloromethane (CH2Cl2) in ethanol (C2H5OH) is investigated in a SWG-based WFDC sensor 136.8 µm long. Sensing performance is studied by 3D finite-difference time domain (FDTD) simulation while sensitivity is derived by computation. Both RI sensing and absorption sensing are examined. RI sensing reveals a sensitivity of -0.47% self-normalized transmitted power change per percentage of CH2Cl2 concentration while 0.12% change in the normalized total integrated output power is realized in the absorption sensing. As the first demonstration of the DC based sensor in the MIR, our device has the potential for tertiary mixture sensing by utilizing both changes in the real and imaginary part of RI. It can also be used as a broadband building block for MIR application such as spectroscopic sensing system.

Silicon Photonics Transmitter with SOA and Semiconductor Mode-Locked Laser.

We experimentally investigate an optical link relying on silicon photonics transmitter and receiver components as well as a single section semiconductor mode-locked laser as a light source and a semiconductor optical amplifier for signal amplification. A transmitter based on a silicon photonics resonant ring modulator, an external single section mode-locked laser and an external semiconductor optical amplifier operated together with a standard receiver reliably supports 14 Gbps on-off keying signaling with a signal quality factor better than 7 for 8 consecutive comb lines, as well as 25 Gbps signaling with a signal quality factor better than 7 for one isolated comb line, both without forward error correction. Resonant ring modulators and Germanium waveguide photodetectors are further hybridly integrated with chip scale driver and receiver electronics, and their co-operability tested. These experiments will serve as the basis for assessing the feasibility of a silicon photonics wavelength division multiplexed link relying on a single section mode-locked laser as a multi-carrier light source.

Experimental realization of an O-band compact polarization splitter and rotator.

We experimentally realize a compact wideband polarization splitter and rotator (PSR) with CMOS compatibility. The fabricated PSR is then tested by utilizing a fabrication-tolerant TE-pass on-chip polarizer we propose to practically solve the issue of accurately aligning the polarizations in fiber and modes on chip. Both of these polarization handling devices take the advantage of bend structure that confines TE mode better than TM mode. The fabricated PSR has a high TM-TE and TE-TE mode conversion efficiency of -0.4 dB and -0.2 dB at 1310 nm, while the extinction ratio is better than 18 dB and the broad bandwidth exceeds 100 nm.

Real-time dynamics and cross-correlation gating spectroscopy of free-carrier Drude slow-light solitons.

Optical solitons-stable waves balancing delicately between nonlinearities and dispersive effects-have advanced the field of ultrafast optics and dynamics, with contributions spanning from supercontinuum generation to soliton fission, optical event horizons, Hawking radiation and optical rogue waves, among others. Here, we investigate picojoule soliton dynamics in silicon slow-light, photonic-bandgap waveguides under the influence of Drude-modeled, free-carrier-induced nonlinear effects. Using real-time and single-shot amplified dispersive Fourier transform spectroscopy simultaneously with high-fidelity cross-correlation frequency resolved optical gating at femtojoule sensitivity and femtosecond resolution, we examine the soliton stability limits, the soliton dynamics including free-carrier quartic slow-light scaling and acceleration, and the Drude electron-hole plasma-induced perturbations in the Cherenkov radiation and modulation instability. Our real-time single-shot and time-averaged cross-correlation measurements are matched with our detailed theoretical modeling, examining the reduced group velocity free-carrier kinetics on solitons at the picojoule scale.

Aluminum nitride electro-optic phase shifter for backend integration on silicon.

An AlN electro-optic phase shifter with a parallel plate capacitor structure is fabricated on Si using the back-end complementary metal-oxide-semiconductor technology, which is feasible for multilayer photonics integration. The modulation efficiency (Vπ⋅Lπ product) measured from the fabricated waveguide-ring resonators and Mach-Zehnder Interferometer (MZI) modulators near the 1550-nm wavelength is ∼240 V⋅cm for the transverse electric (TE) mode and ∼320 V⋅cm for the transverse magnetic (TM) mode, from which the Pockels coefficient of the deposited AlN is deduced to be ∼1.0 pm/V for both TE and TM modes. The methods for further modulation efficiency improvement are addressed.

Compact highly-efficient polarization splitter and rotator based on 90° bends.

We propose a compact highly-efficient CMOS-compatible polarization splitter and rotator (PSR) with a wide bandwidth covering the whole O-band. It benefits from the different confinement capability of TE and TM modes in bend structure. This bend structure helps shorten the PSR and maintain high efficiency, achieving the bending, polarization splitting, rotating of light beam at the same time. Numerical simulations utilizing Lumerical 3-D FDTD solutions demonstrate that the present PSR has a high TM-TE conversion efficiency of -0.11 dB and high TE-TE conversion efficiency of -0.09 dB at 1310 nm, while the extinction ratio is 27.36 dB and 30.61 dB respectively.

Integrated photonics with programmable non-volatile memory.

Silicon photonics integrated circuits (Si-PIC) with well-established active and passive building elements are progressing towards large-scale commercialization in optical communications and high speed optical interconnects applications. However, current Si-PICs do not have memory capabilities, in particular, the non-volatile memory functionality for energy efficient data storage. Here, we propose an electrically programmable, multi-level non-volatile photonics memory cell (PMC) fabricated by standard complementary-metal-oxide-semiconductor (CMOS) compatible processes. A micro-ring resonator (MRR) was built using the PMC to optically read the memory states. Switching energy smaller than 20 pJ was achieved. Additionally, a MRR memory array was employed to demonstrate a four-bit memory read capacity. Theoretically, this can be increased up to ~400 times using a 100 nm free spectral range broadband light source. The fundamental concept of this design provides a route to eliminate the von Neumann bottleneck. The energy-efficient optical storage can complement on-chip optical interconnects for neutral networking, memory input/output interfaces and other computational intensive applications.