In situcell-scale probing nucleation, growth and evolution of CsPbBr3nanowires by optical absorption spectroscopy.

The growth kinetics of colloidal lead halide perovskite nanomaterials are an integral part of their applications, remains poorly understood due to complex nucleation processes and lack ofin situsize monitoring method. Here we demonstrated that absorption spectra can be used to observein situgrowth processes of ultrathin CsPbBr3nanowires in solution with reference to the effective mass infinite deep square potential well model. By means of this method, we have found that the ultrathin nanowires, fabricated by hot injection method, were firstly formed within one minute. Subsequently, they merge with each other into a thicker structure with increasing reaction time. We revealed that the nucleation, growth, and merging of the CsPbBr3nanowires are determined by the acid concentration and ligand chain length. At lower acidity, the critical nucleation size of the nanowire is smaller, while the shorter the ligand chain length, the faster the merging among the nanowires. Moreover, the merging mode between nanowires changed with their nucleation size. This growth kinetics of CsPbBr3nanowires provides a reference for optimizing the synthesis conditions to obtain the one-dimensional CsPbBr3with desired size, thus enabling accurate control of the nanowire shape.

Multifunctional ytterbium oxide buffer for perovskite solar cells.

Perovskite solar cells (PSCs) comprise a solid perovskite absorber sandwiched between several layers of different charge-selective materials, ensuring unidirectional current flow and high voltage output of the devices1,2. A 'buffer material' between the electron-selective layer and the metal electrode in p-type/intrinsic/n-type (p-i-n) PSCs (also known as inverted PSCs) enables electrons to flow from the electron-selective layer to the electrode3-5. Furthermore, it acts as a barrier inhibiting the inter-diffusion of harmful species into or degradation products out of the perovskite absorber6-8. Thus far, evaporable organic molecules9,10 and atomic-layer-deposited metal oxides11,12 have been successful, but each has specific imperfections. Here we report a chemically stable and multifunctional buffer material, ytterbium oxide (YbOx), for p-i-n PSCs by scalable thermal evaporation deposition. We used this YbOx buffer in the p-i-n PSCs with a narrow-bandgap perovskite absorber, yielding a certified power conversion efficiency of more than 25%. We also demonstrate the broad applicability of YbOx in enabling highly efficient PSCs from various types of perovskite absorber layer, delivering state-of-the-art efficiencies of 20.1% for the wide-bandgap perovskite absorber and 22.1% for the mid-bandgap perovskite absorber, respectively. Moreover, when subjected to ISOS-L-3 accelerated ageing, encapsulated devices with YbOx exhibit markedly enhanced device stability.

Buried-Metal-Grid Electrodes for Efficient Parallel-Connected Perovskite Solar Cells.

The limited conductivity of existing transparent conducting oxide (TCO) greatly restricts the further performance improvement of perovskite solar cells (PSCs), especially for large-area devices. Herein, buried-metal-grid tin-doped indium oxide (BMG ITO) electrodes are developed to minimize the power loss caused by the undesirable high sheet resistance of TCOs. By burying 140-nm-thick metal grids into ITO using a photolithography technique, the sheet resistance of ITO is reduced from 15.0 to 2.7 Ω sq-1 . The metal step of BMG over ITO has a huge impact on the charge carrier transport in PSCs. The PSCs using BMG ITO with a low metal step deliver power conversion efficiencies (PCEs) significantly better than that of their counterparts with higher metal steps. Moreover, compared with the pristine ITO-based PSCs, the BMG ITO-based PSCs show a smaller PCE decrease when scaling up the active area of devices. The parallel-connected large-area PSCs with an active area of 102.8 mm2 reach a PCE of 22.5%. The BMG ITO electrodes are also compatible with the fabrication of inverted-structure PSCs and organic solar cells. The work demonstrates the great efficacy of improving the conductivity of TCO by BMG and opens up a promising avenue for constructing highly efficient large-area PSCs.

Influence of Volatile Organic Compound Adsorption on the Characteristics of Organic Field-Effect Transistors and Rules for Gas-Sensing Measurements.

Owing to the advantages of organic field-effect transistors (OFETs) in the versatility of organic synthesis, multiparameter measurement, and signal amplification, sensors based on OFETs have received increasing attention for detecting volatile organic compounds (VOCs). However, false device operation and gas-sensing measurements often occur to vitiate the advantages of OFETs and even output error gas-sensing signals. In this work, by experimentally and theoretically studying the effects of VOC adsorption on the operational characteristics of the OFET, the proper operations of OFETs in gas-sensing measurements were clarified. The multiparameter measurements of OFETs showed that the source-drain current was the optimized parameter for achieving high responsivity, and other OFET parameters could be used for fingerprint analysis. By operating OFETs in the near-threshold region, the amplification effect was switched to enhance the responsivity by orders of magnitude to VOCs, while in the overthreshold region, the OFETs had a low signal-to-noise ratio. Besides, a counteraction effect and an uncertainty effect were discovered, leading to error gas-sensing signals. A theoretical study was carried out to reveal the dependency of the gas-sensing properties of OFETs on VOC adsorption. A series of rules were proposed for guiding the measurements of OFET sensors by taking full advantage of transistors in gas-sensing applications.

Self-assembled monolayer-based blue perovskite LEDs.

Blue perovskite light-emitting diodes (LEDs) have shown external quantum efficiencies (EQEs) of more than 10%; however, devices that emit in the true blue-those that accord with the emission wavelength required for Rec. 2100 primary blue-have so far been limited to EQEs of ~6%. We focused here on true blue emitting CsPbBr3 colloidal nanocrystals (c-NCs), finding in early studies that they suffer from a high charge injection barrier, a problem exacerbated in films containing multiple layers of nanocrystals. We introduce a self-assembled monolayer (SAM) active layer that improves charge injection. We identified a bifunctional capping ligand that simultaneously enables the self-assembly of CsPbBr3 c-NCs while passivating surface traps. We report, as a result, SAM-based LEDs exhibit a champion EQE of ~12% [CIE of (0.132, 0.069) at 4.0 V with a luminance of 11 cd/m2], and 10-fold-enhanced operating stability relative to the best previously reported Rec. 2100-blue perovskite LEDs.

Stabilization of photoactive phases for perovskite photovoltaics.

Interest in photovoltaics (PVs) based on Earth-abundant halide perovskites has increased markedly in recent years owing to the remarkable properties of these materials and their suitability for energy-efficient and scalable solution processing. Formamidinium lead triiodide (FAPbI3)-rich perovskite absorbers have emerged as the frontrunners for commercialization, but commercial success is reliant on the stability meeting the highest industrial standards and the photoactive FAPbI3 phase suffers from instabilities that lead to degradation - an effect that is accelerated under working conditions. Here, we critically assess the current understanding of these phase instabilities and summarize the approaches for stabilizing the desired phases, covering aspects from fundamental research to device engineering. We subsequently analyse the remaining challenges for state-of-the-art perovskite PVs and demonstrate the opportunities to enhance phase stability with ongoing materials discovery and in operando analysis. Finally, we propose future directions towards upscaling perovskite modules, multijunction PVs and other potential applications.

Suppressed phase segregation for triple-junction perovskite solar cells.

The tunable bandgaps and facile fabrication of perovskites make them attractive for multi-junction photovoltaics1,2. However, light-induced phase segregation limits their efficiency and stability3-5: this occurs in wide-bandgap (>1.65 electron volts) iodide/bromide mixed perovskite absorbers, and becomes even more acute in the top cells of triple-junction solar photovoltaics that require a fully 2.0-electron-volt bandgap absorber2,6. Here we report that lattice distortion in iodide/bromide mixed perovskites is correlated with the suppression of phase segregation, generating an increased ion-migration energy barrier arising from the decreased average interatomic distance between the A-site cation and iodide. Using an approximately 2.0-electron-volt rubidium/caesium mixed-cation inorganic perovskite with large lattice distortion in the top subcell, we fabricated all-perovskite triple-junction solar cells and achieved an efficiency of 24.3 per cent (23.3 per cent certified quasi-steady-state efficiency) with an open-circuit voltage of 3.21 volts. This is, to our knowledge, the first reported certified efficiency for perovskite-based triple-junction solar cells. The triple-junction devices retain 80 per cent of their initial efficiency following 420 hours of operation at the maximum power point.

D-O-A based organic phosphors for both aggregation-induced electrophosphorescence and host-free sensitization.

Pure organic phosphors capable of room-temperature phosphorescence show a great potential in organic light-emitting diodes, while it is limited by the big challenge to realize efficient electroluminescence under electric excitation. Herein, we develop a class of organic phosphors based on acridine as the electron donor, triazine as the electron acceptor and oxygen as the bridge between them. Benefitting from the characteristic donor-oxygen-acceptor geometry, these compounds are found to behave an exciting aggregation-induced organic room-temperature electrophosphorescence, and achieve a record-high external quantum efficiency of 15.8% for non-doped devices. Furthermore, they can sensitize multi-resonant emitters in the absence of any additional wide bandgap host, leading to an effective narrowband emission with a peak external quantum efficiency of 26.4% and a small full-width at half maximum of 26 nm. The results clearly indicate that donor-oxygen-acceptor geometry is a promising strategy to design organic phosphors suitable for organic light-emitting diodes.

Bifunctional Electron-Transporting Agent for Red Colloidal Quantum Dot Light-Emitting Diodes.

Indium phosphide (InP) quantum dots have enabled light-emitting diodes (LEDs) that are heavy-metal-free, narrow in emission linewidth, and physically flexible. However, ZnO/ZnMgO, the electron-transporting layer (ETL) in high-performance red InP/ZnSe/ZnS LEDs, suffers from high defect densities, quenches luminescence when deposited on InP, and induces performance degradation that arises due to trap migration from the ETL to the InP emitting layer. We posited that the formation of Zn2+ traps on the outer ZnS shell, combined with sulfur and oxygen vacancy migration between ZnO/ZnMgO and InP, may account for this issue. We synthesized therefore a bifunctional ETL (CNT2T, 3',3'″,3'″″-(1,3,5-triazine-2,4,6-triyl)tris(([1,1'-biphenyl]-3-carbonitrile)) designed to passivate Zn2+ traps locally and in situ and to prevent vacancy migration between layers: the backbone of the small molecule ETL contains a triazine electron-withdrawing unit to ensure sufficient electron mobility (6 × 10-4 cm2 V-1 s-1), and the star-shaped structure with multiple cyano groups provides effective passivation of the ZnS surface. We report as a result red InP LEDs having an EQE of 15% and a luminance of over 12,000 cd m-2; this represents a record among organic-ETL-based red InP LEDs.

Enhanced Organic Thin-Film Transistor Stability by Preventing MoO3 Diffusion with Metal/MoO3/Organic Multilayered Interface Source-Drain Contact.

The source-drain electrode with a MoO3 interfacial modification layer (IML) is considered the most promising method to solve electrical contact issues impeding organic thin-film transistors (OTFTs) from commercialization. However, this method raises many concerns because MoO3 might diffuse into organic materials, which causes device instability. In this work, we observed a significant device stability degradation by damaging on/off switching performance caused by MoO3 diffusion. To prevent the MoO3 diffusion, a source-drain electrode with a multilayered interface contact (MIC) consisting of a top-down stack of metal, MoO3 IML, and organic buffer layer (OBL) is proposed. In the MIC device, the MoO3 IML serves well for its intended functions of reducing contact resistance and suppressing minority carrier injection to the OTFT channel. The inclusion of OBL to the MIC helps block MoO3 diffusion and thereby leads to better device stability and an increased on/off ratio. Through combinations with several organic compounds as a buffer layer, the MoO3 diffusion related electrical behaviors of OTFTs are systematically studied. Key parameters related to MoO3 diffusion such as the Fick coefficient and bias-stress stability such as carrier trapping time are extracted from numerical device analysis. Finally, we summarize a general rule of material selection for making robust source-drain contact.

Efficient Inverted Perovskite Solar Cells via Improved Sequential Deposition.

Inverted-structure metal halide perovskite solar cells (PSCs) have attractive advantages like low-temperature processability and outstanding device stability. The two-step sequential deposition method shows the benefits of easy fabrication and decent performance repeatability. Nevertheless, it is still challenging to achieve high-performance inverted PSCs with similar or equal power conversion efficiencies (PCEs) compared to the regular-structure counterparts via this deposition method. Here, an improved two-step sequential deposition technique is demonstrated via treating the bottom organic hole-selective layer with the binary modulation system composed of a polyelectrolyte and an ammonium salt. Such improved sequential deposition method leads to the spontaneous refinement of up and buried interfaces for the perovskite films, contributing to high film quality with significantly reduced defect density and better charge transportation. As a result, the optimized PSCs show a large enhancement in the open-circuit voltage by 100 mV and a dramatic lift in the PCE from 18.1% to 23.4%, delivering the current state-of-the-art performances for inverted PSCs. Moreover, good operational and thermal stability is achieved upon the improved inverted PSCs. This innovative strategy helps gain a deeper insight into the perovskite crystal growth and defect modulation in the inverted PSCs based on the two-step sequential deposition method.

Refining Perovskite Heterojunctions for Effective Light-Emitting Solar Cells.

Solar cells capable of light-harvesting during daytime and light-emission at night are multifunctional semiconductor devices with many potential applications. Here, it is reported that halide perovskite heterojunction interfaces can be refined to yield stable and efficient solar cells. The cell can also operate effectively as an ultralow-voltage light-emitting diode (LED) with a peak external quantum efficiency of electroluminescence (EQEEL ) of 3.3%. Spectroscopic and microscopic studies reveal that double-heterojunction refinement with wide-bandgap salts is key to densifying the packing of perovskite grains and enlarging the bandgaps of the perovskite surfaces that are in contact with charge-transport semiconductors. The refined perovskite enables a simple device with dual actions of solar cells and LEDs. This type of all-in-one device has the potential to be used in multifunctional harvesting-storage-utilization (HSU) systems.

Fast Near-Infrared Photodetection Using III-V Colloidal Quantum Dots.

Colloidal quantum dots (CQDs) are promising materials for infrared (IR) light detection due to their tunable bandgap and their solution processing; however, to date, the time response of CQD IR photodiodes is inferior to that provided by Si and InGaAs. It is reasoned that the high permittivity of II-VI CQDs leads to slow charge extraction due to screening and capacitance, whereas III-Vs-if their surface chemistry can be mastered-offer a low permittivity and thus increase potential for high-speed operation. In initial studies, it is found that the covalent character in indium arsenide (InAs) leads to imbalanced charge transport, the result of unpassivated surfaces, and uncontrolled heavy doping. Surface management using amphoteric ligand coordination is reported, and it is found that the approach addresses simultaneously the In and As surface dangling bonds. The new InAs CQD solids combine high mobility (0.04 cm2 V-1 s-1 ) with a 4× reduction in permittivity compared to PbS CQDs. The resulting photodiodes achieve a response time faster than 2 ns-the fastest photodiode among previously reported CQD photodiodes-combined with an external quantum efficiency (EQE) of 30% at 940 nm.

Distribution control enables efficient reduced-dimensional perovskite LEDs.

Light-emitting diodes (LEDs) based on perovskite quantum dots have shown external quantum efficiencies (EQEs) of over 23% and narrowband emission, but suffer from limited operating stability1. Reduced-dimensional perovskites (RDPs) consisting of quantum wells (QWs) separated by organic intercalating cations show high exciton binding energies and have the potential to increase the stability and the photoluminescence quantum yield2,3. However, until now, RDP-based LEDs have exhibited lower EQEs and inferior colour purities4-6. We posit that the presence of variably confined QWs may contribute to non-radiative recombination losses and broadened emission. Here we report bright RDPs with a more monodispersed QW thickness distribution, achieved through the use of a bifunctional molecular additive that simultaneously controls the RDP polydispersity while passivating the perovskite QW surfaces. We synthesize a fluorinated triphenylphosphine oxide additive that hydrogen bonds with the organic cations, controlling their diffusion during RDP film deposition and suppressing the formation of low-thickness QWs. The phosphine oxide moiety passivates the perovskite grain boundaries via coordination bonding with unsaturated sites, which suppresses defect formation. This results in compact, smooth and uniform RDP thin films with narrowband emission and high photoluminescence quantum yield. This enables LEDs with an EQE of 25.6% with an average of 22.1 ±1.2% over 40 devices, and an operating half-life of two hours at an initial luminance of 7,200 candela per metre squared, indicating tenfold-enhanced operating stability relative to the best-known perovskite LEDs with an EQE exceeding 20%1,4-6.

Bright and Stable Light-Emitting Diodes Based on Perovskite Quantum Dots in Perovskite Matrix.

Light-emitting diodes (LEDs) based on metal halide perovskite quantum dots (QDs) have achieved impressive external quantum efficiencies; however, the lack of surface protection of QDs, combined with efficiency droop, decreases device operating lifetime at brightnesses of interest. The epitaxial incorporation of QDs within a semiconducting shell provides surface passivation and exciton confinement. Achieving this goal in the case of perovskite QDs remains an unsolved challenge in view of the materials' chemical instability. Here, we report perovskite QDs that remain stable in a thin layer of precursor solution of perovskite, and we use strained QDs as nucleation centers to drive the homogeneous crystallization of a perovskite matrix. Type-I band alignment ensures that the QDs are charge acceptors and radiative emitters. The new materials show suppressed Auger bi-excition recombination and bright luminescence at high excitation (600 W cm-2), whereas control materials exhibit severe bleaching. Primary red LEDs based on the new materials show an external quantum efficiency of 18%, and these retain high performance to brightnesses exceeding 4700 cd m-2. The new materials enable LEDs having an operating half-life of 2400 h at an initial luminance of 100 cd m-2, representing a 100-fold enhancement relative to the best primary red perovskite LEDs.

Strain analysis and engineering in halide perovskite photovoltaics.

Halide perovskites are a compelling candidate for the next generation of clean-energy-harvesting technologies owing to their low cost, facile fabrication and outstanding semiconductor properties. However, photovoltaic device efficiencies are still below practical limits and long-term stability challenges hinder their practical application. Current evidence suggests that strain in halide perovskites is a key factor in dictating device efficiency and stability. Here we outline the fundamentals of strain within halide perovskites relevant to photovoltaic applications and rationalize approaches to characterize the phenomenon. We examine recent breakthroughs in eliminating the adverse impacts of strain, enhancing both device efficiencies and operational stabilities. Finally, we discuss further challenges and outline future research directions for placing stress and strain studies at the forefront of halide perovskite research. An extensive understanding of strain in halide perovskites is needed, which would allow effective strain management and drive further enhancements in efficiencies and stabilities of perovskite photovoltaics.

Recent Progress on Perovskite Surfaces and Interfaces in Optoelectronic Devices.

Surfaces and heterojunction interfaces, where defects and energy levels dictate charge-carrier dynamics in optoelectronic devices, are critical for unlocking the full potential of perovskite semiconductors. In this progress report, chemical structures of perovskite surfaces are discussed and basic physical rules for the band alignment are summarized at various perovskite interfaces. Common perovskite surfaces are typically decorated by various compositional and structural defects such as residual surface reactants, discrete nanoclusters, reactions by products, vacancies, interstitials, antisites, etc. Some of these surface species induce deep-level defect states in the forbidden band forming very harmful charge-carrier traps and affect negatively the interface band alignments for achieving optimal device performance. Herein, an overview of research progresses on surface and interface engineering is provided to minimize deep-level defect states. The reviewed subjects include selection of interface and substrate buffer layers for growing better crystals, materials and processing methods for surface passivation, the surface catalyst for microstructure transformations, organic semiconductors for charge extraction or injection, heterojunctions with wide bandgap perovskites or nanocrystals for mitigating defects, and electrode interlayer for preventing interdiffusion and reactions. These surface and interface engineering strategies are shown to be critical in boosting device performance for both solar cells and light-emitting diodes.

All-Inorganic Quantum-Dot LEDs Based on a Phase-Stabilized α-CsPbI3 Perovskite.

The all-inorganic nature of CsPbI3 perovskites allows to enhance stability in perovskite devices. Research efforts have led to improved stability of the black phase in CsPbI3 films; however, these strategies-including strain and doping-are based on organic-ligand-capped perovskites, which prevent perovskites from forming the close-packed quantum dot (QD) solids necessary to achieve high charge and thermal transport. We developed an inorganic ligand exchange that leads to CsPbI3 QD films with superior phase stability and increased thermal transport. The atomic-ligand-exchanged QD films, once mechanically coupled, exhibit improved phase stability, and we link this to distributing strain across the film. Operando measurements of the temperature of the LEDs indicate that KI-exchanged QD films exhibit increased thermal transport compared to controls that rely on organic ligands. The LEDs exhibit a maximum EQE of 23 % with an electroluminescence emission centered at 640 nm (FWHM: ≈31 nm). These red LEDs provide an operating half-lifetime of 10 h (luminance of 200 cd m-2 ) and an operating stability that is 6× higher than that of control devices.

Enhanced CO2 Photocatalysis by Indium Oxide Hydroxide Supported on TiN@TiO2 Nanotubes.

Herein is developed a ternary heterostructured catalyst, based on a periodic array of 1D TiN nanotubes, with a TiO2 nanoparticulate intermediate layer and a In2O3-x(OH)y nanoparticulate shell for improved performance in the photocatalytic reverse water gas shift reaction. It is demonstrated that the ordering of the three components in the heterostructure sensitively determine its activity in CO2 photocatalysis. Specifically, TiN nanotubes not only provide a photothermal driving force for the photocatalytic reaction, owing to their strong optical absorption properties, but they also serve as a crucial scaffold for minimizing the required quantity of In2O3-x(OH)y nanoparticles, leading to an enhanced CO production rate. Simultaneously, the TiO2 nanoparticle layer supplies photogenerated electrons and holes that are transferred to active sites on In2O3-x(OH)y nanoparticles and participate in the reactions occurring at the catalyst surface.

An Electroactive Pure Organic Room-Temperature Phosphorescence Polymer Based on a Donor-Oxygen-Acceptor Geometry.

An electroactive room-temperature phosphorescence (RTP) polymer has been demonstrated based on a characteristic donor-oxygen-acceptor geometry. Compared with the donor-acceptor reference, the inserted oxygen atom between donor and acceptor can not only decrease hole-electron orbital overlap to suppress the charge transfer fluorescence, but also strengthen spin-orbital coupling effect to facilitate the intersystem crossing and subsequent phosphorescence channels. As a result, a significant RTP is observed in solid states under photo excitation. Most noticeably, the corresponding polymer light-emitting diodes (PLEDs) reveal a dominant electrophosphorescence with a record-high external quantum efficiency of 9.7 %. The performance goes well beyond the 5 % theoretical limit for typical fluors, opening a new door to the development of pure organic RTP polymers towards efficient PLEDs.