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Dense and flat La[Formula: see text]NiFeO[Formula: see text] (LNFO) films were fabricated on the indium tin oxide-coated glass (ITO/glass) substrate by sol-gel method. The bipolar resistive switching behavior (BRS) could be maintained in 100 cycles and remained after 30 days, indicating that the LNFO-based RS device owned good memory stability. Surprisingly, the multilevel RS characteristics were firstly observed in the Au/LNFO/ITO/glass device. The high resistance states (HRSs) and low resistance state (LRS) with the maximum ratio of [Formula: see text] 500 could be remained stably in 900 s and 130 cycles, demonstrating the fine retention and endurance ability of this LNFO-based RS device. The BRS behavior of Au/LNFO/ITO/glass devices primarily obeyed the SCLC mechanism controlled by oxygen vacancies (OVs) dispersed in the LNFO layer. Under the external electric field, injected electrons were captured or discharged by OVs during trapping or detrapping process in the LNFO layer. Thus, the resistive state switched between HRS and LRS reversibly. Moreover, the modulation of Schottky-like barrier formed at the Au/LNFO interface was contributed to the resistive states switchover. It was related to the change in OVs located at the dissipative region near the Au/LNFO interface. The multilevel RS ability of LNFO-based devices in this work provides an opportunity for researching deeply on the high density RS memory in lead-free double perovskite oxides-based devices.
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Correction for 'Enhanced photoluminescence stability and internal defect evolution of the all-inorganic lead-free CsEuCl3 perovskite nanocrystals' by Yalei Gao et al., Phys. Chem. Chem. Phys., 2022, 24, 18860-18867, https://doi.org/10.1039/D2CP01374F.
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A method for gram-scale synthesis of graphitic carbon nitride quantum dots (g-C3N4QDs) was developed. The weight of the g-C3N4QDs was up to 1.32 g in each run with a yield of 66 wt%, and the purity was 99.96 wt%. The results showed that g-C3N4QDs exhibit a stable and strong ultraviolet photoluminescence at a wavelength of 365 nm. More interestingly, the g-C3N4QDs can be used as a high-efficiency, sensitive, and selective fluorescent probe to detect Fe3+ with a detection limit of 0.259 µM.
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Perovskite materials are prominent candidates for many high-performance optoelectronic devices. The rare-earth lead-free CsEuCl3 perovskite nanocrystals are extremely unstable, which makes it very difficult to study their physicochemical properties and applications. Herein, we improved the stability of rare-earth based CsEuCl3 nanocrystals by employing a silica-coating for the first time. Simultaneously, the naturally formed "hollow" regions with an obviously blue-shifted PL emission were first observed inside the CsEuCl3 nanocrystals during the period of storage. Density functional theory (DFT) calculations showed that the formed "hollow" regions are due to the internal defect evolution in the perovskite lattice, which is also responsible for the increase of the bandgap and the blue-shift of emission. Additionally, the rapid decline of luminescence is probably due to the nanocrystals' final cracking with the expansion of the "hollow" regions. This work helps to understand the relationship between defects and luminescence properties, and provides guidance for the design of more stable lead-free perovskite nanocrystals.
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High-density Cs2AgBiBr6 films with uniform grains were prepared by a simple one-step and low-temperature sol-gel method on indium tin oxide (ITO) substrates. An explicit tristate bipolar resistance switching behavior was observed in the Pt/Cs2 AgBiBr6/ITO/glass devices under irradiation of 10 mW/cm2 (445 nm). This behavior was stable over 1200 s. The maximum ratio of the high and low resistance states was about 500. Based on the analysis of electric properties, valence variation and absorption spectra, the resistive switching characteristics were attributed to the trap-controlled space charge-limited current mechanism due to the bromine vacancies in the Cs2AgBiBr6 layer. On the other hand, it is suggested that the ordering of the Schottky-like barrier located at Pt/Cs2AgBiBr6 affects the three-state resistance switching behavior under light irradiation. The ability to adjust the photoelectrical properties of Cs2AgBiBr6-based resistive switching memory devices is a promising strategy to develop high-density memory.
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Light-modulated lead-free perovskites-based memristors, combining photoresponse and memory, are promising as multifunctional devices. In this work, lead-free double perovskite Cs2AgBiBr6 films with dense surfaces and uniform grains were prepared by the low-temperature sol-gel method on indium tin oxide (ITO) substrates. A memory device based on a lead-free double perovskite Cs2AgBiBr6 film, Pt/Cs2AgBiBr6/ITO/glass, presents obvious bipolar resistive switching behavior. The ROFF/RON ratio under 445 nm wavelength light illumination is ~100 times greater than that in darkness. A long retention capability (>2400 s) and cycle-to-cycle consistency (>500 times) were observed in this device under light illumination. The resistive switching behavior is primarily attributed to the trap-controlled space-charge-limited current mechanism caused by bromine vacancies in the Cs2AgBiBr6 medium layer. Light modulates resistive states by regulating the condition of photo-generated carriers and changing the Schottky-like barrier of the Pt/Cs2AgBiBr6 interface under bias voltage sweeping.
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High-quality CH3NH3PbI 3-xClx (MAPIC) films were prepared using potassium chloride (KCl) as an additive on indium tin oxide (ITO)-coated glass substrates using a simple one-step and low-temperature solution reaction. The Au/KCl-MAPIC/ITO/glass devices exhibited obvious multilevel resistive switching behavior, moderate endurance, and good retention performance. Electrical conduction analysis indicated that the resistive switching behavior of the KCl-doped MAPIC films was primarily attributed to the trap-controlled space-charge-limited current conduction that was caused by the iodine vacancies in the films. Moreover, the modulations of the barrier in the Au/KCl-MAPIC interface under bias voltages were thought to be responsible for the resistive switching in the carrier injection trapping/detrapping process.
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Highly efficient H2 production from water splitting has been achieved by N-doped titanate nanotubes (N-TNTs) decorated with graphene quantum dots (GQDs) in this work. In order to promote charge carrier transmission at the interface, a facile and environmentally friendly in situ growth method was employed to construct a strongly coupled N-TNT/GQD composite photocatalyst. The results revealed that N atoms were effectively doped into the crystal lattice of the TNTs in the form of both interstitial N and substitutional N, and the GQDs were decorated onto both the inner and outer surfaces of the N-TNTs through the formation of Ti-O-C chemical bonds. Photoelectrochemical measurements proved that, in N-TNT/GQD composite, N-doping can extend light response to the visible-light range, and the coupling with GQDs not only enhanced visible-light absorption, but also promoted interfacial charge carrier transfer. Due to the synergistic effect between N-doping and GQD coupling, the closely integrated N-TNT/GQD composite exhibits a much superior photocatalytic H2 production performance under UV-vis irradiation, being 2.1 times higher than that of pure TNTs.
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The bipolar resistive switching behavior in a device based on an crystalline iron-based organic-inorganic, perovskite-like material of (CH3NH3)2FeCl4 (MAFC), was examined and studied. Both high and low resistance states appeared to have no obvious degradation during a measurement period of 600 s with 400 cycles in a Ag/MAFC/Cu device, which also exhibited good thermal stability over a wide temperature range of 290 to 340 K. The conductivity-state switching behavior was derived from the competition between the ionic current within the MAFC and the Faradaic current that originated from oxidative reactions at the Ag/MAFC/Cu interface. A model explaining the oxidative reaction process was established to describe the symmetric resistive switching behavior in the Ag/MAFC/Cu cell. With an applied bias voltage sweeping, the oxidative layers passivated and dissipated at the Ag/MAFC/Cu interface that resulted in the competition between the induced current and the ionic current, and thus caused a symmetric resistance change. On the basis of this interfacial effect, the MAFC crystals can be used as memristor elements in devices for write-read-erase-rewrite process.
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We report a novel epitaxial growth of EuTiO3 films on SrTiO3(001) substrate by hydrothermal method. The morphological, structural, chemical, and magnetic properties of these epitaxial EuTiO3 films were examined by scanning electron microscopy, transmission electron microscopy, high-resolution X-ray diffractometry, X-ray photoelectron spectroscopy, and superconducting quantum interference device magnetometry, respectively. As-grown EuTiO3 films with a perovskite structure were found to show an out-of-plane lattice shrinkage and room-temperature ferromagnetism, possibly resulting from an existence of Eu(3+). Postannealing at 1,000°C could reduce the amount of Eu(3+), relax the out-of-plane lattice shrinkage, and impact the magnetic properties of the films. PACS: 81.10.Aj; 81.15.-z; 61.05.-a.