Scalable interconnection using a superconducting flux qubit.

Superconducting quantum computers are rapidly reaching scales where bottlenecks to scaling arise from the practical aspects of the fabrication process. To improve quantum computer performance, implementation technology that guarantees the scalability of the number of qubits is essential. Increasing the degrees of freedom in routing by 2.5-dimensional implementation is important for realizing circuit scalability. We report an implementation technology to overcome the scaling bottlenecks using a reliable connection qubit with a demonstration of quantum annealing. The method comprises interconnection based on quantum annealing using a superconducting flux qubit, precise coupling status control, and flip-chip bonding. We perform experiments and simulations with a proof-of-concept demonstration of qubit coupling via interconnection using a flux qubit. The coupling status is strictly controllable by quantum annealing. A low-temperature flip-chip bonding technology is introduced for the 2.5-dimensional interconnection. The superconducting flux qubit, formed across two different chips via bumps, is demonstrated for the first time to show a state transition like that in a conventional qubit. The quantum annealing flux qubit and flip-chip bonding enable new interconnections between qubits. A perspective on the possibility of applying this technology to the connection between gate-type qubits is described.

Field-tuned superconductor-insulator transitions and Hall resistance in thin polycrystalline MoN films.

We report on the superconductor-insulator transitions (SITs) of disordered molybdenum nitride (MoN) thin films on (1 0 0) MgO substrates as a function of the film thickness and magnetic fields. The T c of the superconducting MoN films, which exhibit a sharp superconducting transition, monotonically decreases as the normal state R sq increases with a decreasing film thickness. For several films with different thicknesses, we estimate the critical field H c and the product zν ≃ 0.6 of the dynamical exponent z and the correlation length exponent ν using a finite scaling analysis. The value of this product can be explained by the (2 + 1) XY model. We found that the Hall resistance ΔR xy (H) is maximized when the magnetic field satisfies H HP(T) [Formula: see text] |1 - T/T C0| in the superconducting state and also in the normal states owning to the superconducting fluctuation corresponding to the ghost critical magnetic field. We measured the Hall conductivity δσ xy (H) = σ xy (H) - [Formula: see text] and fit the Gaussian approximation theory for δσ xy (H) to the experimental data. Agreement between the data and the theory beyond H c suggests the survival of the Cooper pair in the insulating region of the SIT.

Localization and pair breaking parameter in superconducting molybdenum nitride thin films.

We have investigated the superconductor-insulator transition in molybdenum nitride films prepared by deposition onto MgO substrates. It is indicated that the T c depression from [Formula: see text] for thick films with increase of the normal state sheet resistance [Formula: see text] was well explained by the Finkel'stein formula from the localization theory. Present analysis suggests that the superconducting-insulator transition occurs at a critical sheet resistance [Formula: see text]. It is found that the [Formula: see text] above [Formula: see text] shows different characteristics of [Formula: see text] and [Formula: see text] in the regions [Formula: see text] and [Formula: see text], respectively, where [Formula: see text] is the classical residual resistance and A is a constant. The excess conductance [Formula: see text] due to thermal fluctuation has been analyzed by the sum of the Aslamazov-Larkin and Maki-Thompson correction terms with use of the pair breaking parameter [Formula: see text] in the latter term. The sum agrees well with the data, although the experimental results of the [Formula: see text] dependence of [Formula: see text], that is, [Formula: see text] shows the disagreement with a linear relation [Formula: see text] derived from the localization theory.

Duality picture of Superconductor-insulator transitions on Superconducting nanowire.

In this study, we investigated the electrical transport properties of niobium titanium nitride (NbTiN) nanowire with four-terminal geometries to clarify the superconducting phase slip phenomena and superconducting-insulator transitions (SIT) for one-dimensional superconductors. We fabricated various nanowires with different widths and lengths from epitaxial NbTiN films using the electron beam lithography method. The temperature dependence of resistance R(T) below the superconducting transition temperature Tc was analyzed using thermal activation phase slip (TAPS) and quantum phase slip (QPS) theories. Although the accuracy of experimental data at low temperatures can deviate when using the TAPS model, the QPS model thoroughly represents the R(T) characteristic with resistive tail at low temperatures. From the analyses of data on Tc, we found that NbTiN nanowires exhibit SIT because of the change in the ratio of kinetic inductance energy and QPS amplitude energy with respect to the flux-charge duality theory.

Light-induced collective pseudospin precession resonating with Higgs mode in a superconductor.

Superconductors host collective modes that can be manipulated with light. We show that a strong terahertz light field can induce oscillations of the superconducting order parameter in NbN with twice the frequency of the terahertz field. The result can be captured as a collective precession of Anderson's pseudospins in ac driving fields. A resonance between the field and the Higgs amplitude mode of the superconductor then results in large terahertz third-harmonic generation. The method we present here paves a way toward nonlinear quantum optics in superconductors with driving the pseudospins collectively and can be potentially extended to exotic superconductors for shedding light on the character of order parameters and their coupling to other degrees of freedom.

Microstructural analysis and transport properties of MoO and MoC nanostructures prepared by focused electron beam-induced deposition.

By electron-beam-induced deposition, we have succeeded in the direct fabrication of nanowires of molybdenum oxide (MoOx) and molybdenum carbide (MoC) on a SiO2 substrate set in a scanning electron microscope. In order to prepare MoOx specimens of high purity, a precursor gas of molybdenum hexacarbonyl [Mo(CO)6] is used, mixed with oxygen gas. On the other hand, MoC is grown by mixing H2O gas with the precursor gas. The electrical transport properties of the nanowires are investigated by the DC four-terminal method. A highly resistive MoOx nanowire prepared from an as-deposited specimen by annealing in air shows nonlinear current-voltage characteristics and a high photoconductivity. The resistivity ρ of an as-deposited amorphous MoC (a-MoC) nanowire takes its maximum at a temperature T ≈ 10 K and decreases to ≈ 0 with decreasing temperature. This behavior of ρ(T) indicates the possible occurrence of superconductivity in a-MoC nanowires. The characteristic of ρ(T) below the superconducting transition temperature Tc ≈ 4 K can be well explained by the quantum phase-slip model with a coherence length ξ(0) ≈ 8 nm at T = 0.

Higgs amplitude mode in the BCS superconductors Nb1-xTi(x)N induced by terahertz pulse excitation.

Ultrafast responses of BCS superconductor Nb(1-x)Ti(x)N films in a nonadiabatic excitation regime were investigated by using terahertz (THz) pump-THz probe spectroscopy. After an instantaneous excitation with the monocycle THz pump pulse, a transient oscillation emerges in the electromagnetic response in the BCS gap energy region. The oscillation frequency coincides with the asymptotic value of the BCS gap energy, indicating the appearance of the theoretically anticipated collective amplitude mode of the order parameter, namely the Higgs amplitude mode. Our result opens a new pathway to the ultrafast manipulation of the superconducting order parameter by optical means.

Low-jitter single flux quantum signal readout from superconducting single photon detector.

We developed a single-flux-quantum (SFQ) readout technology for superconducting single-photon detectors (SSPDs) to achieve low-jitter signal readout. By optimizing circuit parameters of the SFQ readout circuit, the input current sensitivity was improved below 10 µA, which is smaller than a typical critical current of SSPD. The experiment using a pulse-pattern generator as an input pulse source revealed that the measured jitter of the SFQ readout circuit is well below the system jitter of our measurement setup for the input current level above 15 µA. The measured jitter of the SSPD connected to the SFQ readout circuit was 37 ps full width at half maximum (FWHM) for an SSPD bias current of around 18 µA, which is a significant improvement on 67 ps FWHM jitter observed in conventional readout without an SFQ readout circuit.

Crosstalk-free operation of multielement superconducting nanowire single-photon detector array integrated with single-flux-quantum circuit in a 0.1 W Gifford-McMahon cryocooler.

We demonstrate the successful operation of a multielement superconducting nanowire single-photon detector (SSPD) array integrated with a single-flux-quantum (SFQ) readout circuit in a compact 0.1 W Gifford-McMahon cryocooler. A time-resolved readout technique, where output signals from each element enter the SFQ readout circuit with finite time intervals, revealed crosstalk-free operation of the four-element SSPD array connected with the SFQ readout circuit. The timing jitter and the system detection efficiency were measured to be 50 ps and 11.4%, respectively, which were comparable to the performance of practical single-pixel SSPD systems.

Superconductivity in transparent zinc-doped In2O3 films having low carrier density.

Thin polycrystalline zinc-doped indium oxide (In2O3-ZnO) films were prepared by post-annealing amorphous films with various weight concentrations x of ZnO in the range 0⩽x ⩽0.06. We have studied the dependences of the resistivity ρ and Hall coefficient on temperature T and magnetic field H in the range 0.5⩽T ⩽300 K, H⩽6 Tfor 350 nm films annealed in air. Films with 0⩽x⩽0.03 show the superconducting resistive transition. The transition temperature Tc is below 3.3 K and the carrier density n is about 1025-1026 m-3. The annealed In2O3-ZnO films were examined by transmission electron microscopy and x-ray diffraction analysis revealing that the crystallinity of the films depends on the annealing time. We studied the upper critical magnetic field Hc2 (T) for the film with x = 0.01. From the slope of dHc2 /dT, we obtain the coherence length ξ (0) ≈ 10 nm at T = 0 K and a coefficient of electronic heat capacity that is small compared with those of other oxide materials.