How Photogenerated I2 Induces I-Rich Phase Formation in Lead Mixed Halide Perovskites.

Bandgap tunability of lead mixed halide perovskites (LMHPs) is a crucial characteristic for versatile optoelectronic applications. Nevertheless, LMHPs show the formation of iodide-rich (I-rich) phase under illumination, which destabilizes the semiconductor bandgap and impedes their exploitation. Here, it is shown that how I2 , photogenerated upon charge carrier trapping at iodine interstitials in LMHPs, can promote the formation of I-rich phase. I2 can react with bromide (Br- ) in the perovskite to form a trihalide ion I2 Br- (Iδ- -Iδ+ -Brδ- ), whose negatively charged iodide (Iδ- ) can further exchange with another lattice Br- to form the I-rich phase. Importantly, it is observed that the effectiveness of the process is dependent on the overall stability of the crystalline perovskite structure. Therefore, the bandgap instability in LMHPs is governed by two factors, i.e., the density of native defects leading to I2 production and the Br- binding strength within the crystalline unit. Eventually, this study provides rules for the design of chemical composition in LMHPs to reach their full potential for optoelectronic devices.

How Halide Alloying Influences the Optoelectronic Quality in Tin-Halide Perovskite Solar Absorbers.

Halide alloying in tin-based perovskites allows for photostable bandgap tuning between 1.3 and 2.2 eV. Here, we elucidate how the band edge energetics and associated defect activity impact the optoelectronic properties of this class of materials. We find that by increasing the bromide:iodide ratio, a simultaneous destabilization of acceptor defects (tin vacancies and iodine interstitials) and stabilization of donor defects (iodine vacancies and tin interstitials) occurs, with strong changes arising for Br contents exceeding 50%. This translates into a decreased doping which is, however, accompanied by a higher density of nonradiative recombination channels. Films with high Br content show a high degree of disorder and trap state densities, with the best optoelectronic quality being found for Br contents of around 33%. These observations match the open circuit voltage trend of tin-based mixed halide perovskite solar cells, supporting the relevance of optoelectronic properties and chemistry of defects to optimize wide-bandgap tin perovskite devices.

Defect Engineering to Achieve Photostable Wide Bandgap Metal Halide Perovskites.

Bandgap tuning is a crucial characteristic of metal-halide perovskites, with benchmark lead-iodide compounds having a bandgap of 1.6 eV. To increase the bandgap up to 2.0 eV, a straightforward strategy is to partially substitute iodide with bromide in so-called mixed-halide lead perovskites. Such compounds are prone, however, to light-induced halide segregation resulting in bandgap instability, which limits their application in tandem solar cells and a variety of optoelectronic devices. Crystallinity improvement and surface passivation strategies can effectively slow down, but not completely stop, such light-induced instability. Here we identify the defects and the intragap electronic states that trigger the material transformation and bandgap shift. Based on such knowledge, we engineer the perovskite band edge energetics by replacing lead with tin and radically deactivate the photoactivity of such defects. This leads to metal halide perovskites with a photostable bandgap over a wide spectral range and associated solar cells with photostable open circuit voltages.

Lasing in Two-Dimensional Tin Perovskites.

Two-dimensional (2D) perovskites have been proposed as materials capable of improving the stability and surpassing the radiative recombination efficiency of three-dimensional perovskites. However, their luminescent properties have often fallen short of what has been expected. In fact, despite attracting considerable attention for photonic applications during the last two decades, lasing in 2D perovskites remains unclear and under debate. Here, we were able to improve the optical gain properties of 2D perovskite and achieve optically pumped lasing. We show that the choice of the spacer cation affects the defectivity and photostability of the perovskite, which in turn influences its optical gain. Based on our synthetic strategy, we obtain PEA2SnI4 films with high crystallinity and favorable optical properties, resulting in amplified spontaneous emission (ASE) with a low threshold (30 µJ/cm2), a high optical gain above 4000 cm-1 at 77 K, and ASE operation up to room temperature.

Effect of electronic doping and traps on carrier dynamics in tin halide perovskites.

Tin halide perovskites have recently emerged as promising materials for low band gap solar cells. Much effort has been invested on controlling the limiting factors responsible for poor device efficiencies, namely self-p-doping and tin oxidation. Both phenomena are related to the presence of defects; however, full understanding of their implications in the optoelectronic properties of the material is still missing. We provide a comprehensive picture of the competing radiative and non-radiative recombination processes in tin-based perovskite thin films to establish the interplay between doping and trapping by combining photoluminescence measurements with trapped-carrier dynamic simulations and first-principles calculations. We show that pristine Sn perovskites, i.e. sample processed with commercially available SnI2 used as received, exhibit extremely high radiative efficiency due to electronic doping which boosts the radiative band-to-band recombination. Contrarily, thin films where Sn4+ species are intentionally introduced show drastically reduced radiative lifetime and efficiency due to a dominance of Auger recombination at all excitation densities when the material is highly doped. The introduction of SnF2 reduces the doping and passivates Sn4+ trap states but conversely introduces additional non-radiative decay channels in the bulk that fundamentally limit the radiative efficiency. Overall, we provide a qualitative model that takes into account different types of traps present in tin-perovskite thin films and show how doping and defects can affect the optoelectronic properties.

Defect Activity in Lead Halide Perovskites.

The presence of various types of chemical interactions in metal-halide perovskite semiconductors gives them a characteristic "soft" fluctuating structure, prone to a wide set of defects. Understanding of the nature of defects and their photochemistry is summarized, which leverages the cooperative action of density functional theory investigations and accurate experimental design. This knowledge is used to describe how defect activity determines the macroscopic properties of the material and related devices. Finally, a discussion of the open questions provides a path towards achieving an educated prediction of device operation, necessary to engineer reliable devices.