Polarization Topology at the Nominally Charged Domain Walls in Uniaxial Ferroelectrics.

Ferroelectric domain walls provide a fertile environment for novel materials physics. If a polarization discontinuity arises, it can drive a redistribution of electronic carriers and changes in band structure, which often result in emergent 2D conductivity. If such a discontinuity is not tolerated, then its amelioration usually involves the formation of complex topological patterns, such as flux-closure domains, dipolar vortices, skyrmions, merons, or Hopfions. The degrees of freedom required for the development of such patterns, in which dipolar rotation is a hallmark, are readily found in multiaxial ferroelectrics. In uniaxial ferroelectrics, where only two opposite polar orientations are possible, it has been assumed that discontinuities are unavoidable when antiparallel components of polarization meet. This perception has been borne out by the appearance of charged conducting domain walls in systems such as hexagonal manganites and lithium niobate. Here, experimental and theoretical investigations on lead germanate (Pb5 Ge3 O11 ) reveal that polar discontinuities can be obviated at head-to-head and tail-to-tail domain walls by mutual domain bifurcation along two different axes, creating a characteristic saddle-point domain wall morphology and associated novel dipolar topology, removing the need for screening charge accumulation and associated conductivity enhancement.

Ultrahigh Carrier Mobilities in Ferroelectric Domain Wall Corbino Cones at Room Temperature.

Recently, electrically conducting heterointerfaces between dissimilar band insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport and fundamental aspects of conduction have been thoroughly explored. Perhaps surprisingly, similar studies on conceptually much simpler conducting homointerfaces, such as domain walls, are not nearly so well developed. Addressing this disparity, magnetoresistance is herein reported in approximately conical 180° charged domain walls, in partially switched ferroelectric thin-film single-crystal lithium niobate. This system is ideal for such measurements: first, the conductivity difference between domains and domain walls is unusually large (a factor of 1013 ) and hence currents driven through the thin film, between planar top and bottom electrodes, are overwhelmingly channeled along the walls; second, when electrical contact is made to the top and bottom of the domain walls and a magnetic field is applied along their cone axes, then the test geometry mirrors that of a Corbino disk: a textbook arrangement for geometric magnetoresistance measurement. Data imply carriers with extremely high room-temperature Hall mobilities of up to ≈3700 cm2 V-1 s-1 . This is an unparalleled value for oxide interfaces (and for bulk oxides) comparable to mobilities in other systems seen at cryogenic, rather than at room, temperature.

Ferroelectric Domain Wall Memristor.

A domain wall-enabled memristor is created, in thin film lithium niobate capacitors, which shows up to twelve orders of magnitude variation in resistance. Such dramatic changes are caused by the injection of strongly inclined conducting ferroelectric domain walls, which provide conduits for current flow between electrodes. Varying the magnitude of the applied electric-field pulse, used to induce switching, alters the extent to which polarization reversal occurs; this systematically changes the density of the injected conducting domain walls in the ferroelectric layer and hence the resistivity of the capacitor structure as a whole. Hundreds of distinct conductance states can be produced, with current maxima achieved around the coercive voltage, where domain wall density is greatest, and minima associated with the almost fully switched ferroelectric (few domain walls). Significantly, this "domain wall memristor" demonstrates a plasticity effect: when a succession of voltage pulses of constant magnitude is applied, the resistance changes. Resistance plasticity opens the way for the domain wall memristor to be considered for artificial synapse applications in neuromorphic circuits.

Electrical Tunability of Domain Wall Conductivity in LiNbO3 Thin Films.

Domain wall nanoelectronics is a rapidly evolving field, which explores the diverse electronic properties of the ferroelectric domain walls for application in low-dimensional electronic systems. One of the most prominent features of the ferroelectric domain walls is their electrical conductivity. Here, using a combination of scanning probe and scanning transmission electron microscopy, the mechanism of the tunable conducting behavior of the domain walls in the sub-micrometer thick films of the technologically important ferroelectric LiNbO3 is explored. It is found that the electric bias generates stable domains with strongly inclined domain boundaries with the inclination angle reaching 20° with respect to the polar axis. The head-to-head domain boundaries exhibit high conductance, which can be modulated by application of the sub-coercive voltage. Electron microscopy visualization of the electrically written domains and piezoresponse force microscopy imaging of the very same domains reveals that the gradual and reversible transition between the conducting and insulating states of the domain walls results from the electrically induced wall bending near the sample surface. The observed modulation of the wall conductance is corroborated by the phase-field modeling. The results open a possibility for exploiting the conducting domain walls as the electrically controllable functional elements in the multilevel logic nanoelectronics devices.

Large Carrier Mobilities in ErMnO3 Conducting Domain Walls Revealed by Quantitative Hall-Effect Measurements.

Kelvin probe force microscopy (KPFM) has been used to directly and quantitatively measure Hall voltages, developed at conducting tail-to-tail domain walls in ErMnO3 single crystals, when current is driven in the presence of an approximately perpendicular magnetic field. Measurements across a number of walls, taken using two different atomic force microscope platforms, consistently suggest that the active p-type carriers have unusually large room temperature mobilities of the order of hundreds of square centimeters per volt second. Associated carrier densities were estimated to be of the order of 1013 cm-3. Such mobilities, at room temperature, are high in comparison with both bulk oxide conductors and LaAlO3-SrTiO3 sheet conductors. High carrier mobilities are encouraging for the future of domain-wall nanoelectronics and, significantly, also suggest the feasibility of meaningful investigations into dimensional confinement effects in these novel domain-wall systems.