An Experimental Study on the Thermal Stability of Mg2Si/Ni Interface under Thermal Cycling.

Mg2Si is a promising eco-friendly thermoelectric material, and Ni is suited for electrical contact on it. In this study, Bi-doped Mg2Si ingots with Ni contacts were fabricated by co-sintering, and thermal stability was investigated by long-time (500 h, 500 cycles) temperature cycling from 25 °C to a peak temperature (Th = 400 and 450 °C) in N2. The as-sintered Ni/Mg2Si interfacial region is a multilayer consisting of Mg3Bi2, a series of MgxSiyNiz ternary compounds (ω, ν, ζ, and η-phases), and MgNi2. In the complex microstructure, the MgNi2 / η-phase interface was vulnerable to stress-induced voiding at Th = 450 °C, which arises from the mismatch of the thermal expansion coefficients. Interfacial voiding was avoided by adding 10 mol% Ag in Ni, which is probably due to the suppression of vacancy migration by the Ag-containing 2nd phase formation at the MgNi2/η-phase interface.

Surface Plasmon Resonance-Enhanced Near-Infrared Absorption in Single-Layer MoS2 with Vertically Aligned Nanoflakes.

The development of MoS2 with two- or three-dimensional heterostructures can provide a significant breakthrough for the enhancement of photodetection abilities such as increase in light absorption and expanding the detection ranges. Till date, although the synthesis of a MoS2 layer with three-dimensional nanostructures using a chemical vapor deposition (CVD) process has been successfully demonstrated, most studies have concentrated on electrochemical applications that utilize structural strengths, for example, a large specific surface area and electrochemically active sites. Here, for the first time, we report spectral light absorption induced by plasmon resonances in single-layer MoS2 (SL-MoS2) with vertically aligned nanoflakes grown by a CVD process. Treatment with oxygen plasma results in the formation of a substoichiometric phase of MoOx in the vertical nanoflakes, which exhibit a high electron density of 4.5 × 1013 cm-2. The substoichiometric MoOx with a high electron-doping level that is locally present on the SL-MoS2 surface induces an absorption band in the near-infrared (NIR) wavelength range of 1000-1750 nm because of the plasmon resonances. Finally, we demonstrate the enhancement of photodetection ability by broadening the detection range from the visible region to the NIR region in oxygen-treated SL-MoS2 with vertically aligned nanoflakes.

Proton Conducting Perhydropolysilazane-Derived Gate Dielectric for Solution-Processed Metal Oxide-Based Thin-Film Transistors.

Perhydropolysilazane (PHPS), an inorganic polymer composed of Si-N and Si-H, has attracted much attention as a precursor for gate dielectrics of thin-film transistors (TFTs) due to its facile processing even at a relatively low temperature. However, an in-depth understanding of the tunable dielectric behavior of PHPS-derived dielectrics and their effects on TFT device performance is still lacking. In this study, the PHPS-derived dielectric films formed at different annealing temperatures have been used as the gate dielectric layer for solution-processed indium zinc oxide (IZO) TFTs. Notably, the IZO TFTs fabricated on PHPS annealed at 350 °C exhibit mobility as high as 118 cm2 V-1 s-1, which is about 50 times the IZO TFTs made on typical SiO2 dielectrics. The outstanding electrical performance is possible because of the exceptional capacitance of PHPS-derived dielectric caused by the limited hydrolysis reaction of PHPS at a low processing temperature (<400 °C). According to our analysis, the exceptional dielectric behavior is originated from the electric double layer formed by mobile of protons in the low temperature-annealed PHPS dielectrics. Furthermore, proton conduction through the PHPS dielectric occurs through a three-dimensional pathway by a hopping mechanism, which allows uniform polarization of the dielectric even at room temperature, leading to amplified performance of the IZO TFTs.

Highly Sensitive and Flexible Strain-Pressure Sensors with Cracked Paddy-Shaped MoS2/Graphene Foam/Ecoflex Hybrid Nanostructures.

Three-dimensional graphene porous networks (GPNs) have received considerable attention as a nanomaterial for wearable touch sensor applications because of their outstanding electrical conductivity and mechanical stability. Herein, we demonstrate a strain-pressure sensor with high sensitivity and durability by combining molybdenum disulfide (MoS2) and Ecoflex with a GPN. The planar sheets of MoS2 bonded to the GPN were conformally arranged with a cracked paddy shape, and the MoS2 nanoflakes were formed on the planar sheet. The size and density of the MoS2 nanoflakes were gradually increased by raising the concentration of (NH4)2MoS4. We found that this conformal nanostructure of MoS2 on the GPN surface can produce improved resistance variation against external strain and pressure. Consequently, our MoS2/GPN/Ecoflex sensors exhibited noticeably improved sensitivity compared to previously reported GPN/polydimethylsiloxane sensors in a pressure test because of the existence of the conformal planar sheet of MoS2. In particular, the MoS2/GPN/Ecoflex sensor showed a high sensitivity of 6.06 kPa-1 at a (NH4)2MoS4 content of 1.25 wt %. At the same time, it displayed excellent durability even under repeated loading-unloading pressure and bending over 4000 cycles. When the sensor was attached on a human temple and neck, it worked correctly as a drowsiness detector in response to motion signals such as neck bending and eye blinking. Finally, a 3 × 3 tactile sensor array showed precise touch sensing capability with complete isolation of electrodes from each other for application to touch electronic applications.

High Durability and Waterproofing rGO/SWCNT-Fabric-Based Multifunctional Sensors for Human-Motion Detection.

Wearable strain-pressure sensors for detecting electrical signals generated by human activities are being widely investigated because of their diverse potential applications, from observing human motion to health monitoring. In this study, we fabricated reduced graphene oxide (rGO)/single-wall carbon nanotube (SWCNT) hybrid fabric-based strain-pressure sensors using a simple solution process. The structural and chemical properties of the rGO/SWCNT fabrics were characterized using scanning electron microscopy (SEM), Raman, and X-ray photoelectron spectroscopy (XPS). Complex networks containing rGO and SWCNTs were homogeneously formed on the cotton fabric. The sensing performance of the devices was evaluated by measuring the effects of bending strain and pressure. When the CNT content was increased, the change in relative resistance decreased, while durability was significantly improved. The rGO/SWCNT (0.04 wt %) fabric sensor showed particularly high mechanical stability and flexibility during 100 000 bending tests at the extremely small bending radius of 3.5 mm (11.6% bending strain). Moreover, the rGO/SWCNT fabric device exhibited excellent water resistant properties after 10 washing tests due to its hydrophobic nature. Finally, we demonstrated a fabric-sensor-based motion glove and confirmed its practical applicability.

Roll-to-Roll Production of Layer-Controlled Molybdenum Disulfide: A Platform for 2D Semiconductor-Based Industrial Applications.

A facile methodology for the large-scale production of layer-controlled MoS2 layers on an inexpensive substrate involving a simple coating of single source precursor with subsequent roll-to-roll-based thermal decomposition is developed. The resulting 50 cm long MoS2 layers synthesized on Ni foils possess excellent long-range uniformity and optimum stoichiometry. Moreover, this methodology is promising because it enables simple control of the number of MoS2 layers by simply adjusting the concentration of (NH4 )2 MoS4 . Additionally, the capability of the MoS2 for practical applications in electronic/optoelectronic devices and catalysts for hydrogen evolution reaction is verified. The MoS2 -based field effect transistors exhibit unipolar n-channel transistor behavior with electron mobility of 0.6 cm2 V-1 s-1 and an on-off ratio of ≈10³. The MoS2 -based visible-light photodetectors are fabricated in order to evaluate their photoelectrical properties, obtaining an 100% yield for active devices with significant photocurrents and extracted photoresponsivity of ≈22 mA W-1 . Moreover, the MoS2 layers on Ni foils exhibit applicable catalytic activity with observed overpotential of ≈165 mV and a Tafel slope of 133 mV dec-1 . Based on these results, it is envisaged that the cost-effective methodology will trigger actual industrial applications, as well as novel research related to 2D semiconductor-based multifaceted applications.

Enhanced thermoelectric properties of AgSbTe2 obtained by controlling heterophases with Ce doping.

We report the enhanced thermoelectric properties of Ce-doped AgSbTe2 (AgSb1-xCexTe2) compounds. As the Ce contents increased, the proportion of heterophase Ag2Te in the AgSbTe2 gradually decreased, along with the size of the crystals. The electrical resistivity and Seebeck coefficient were dramatically affected by Ce doping and the lattice thermal conductivity was reduced. The presence of nanostructured Ag2Te heterophases resulted in a greatly enhanced dimensionless figure of merit, ZT of 1.5 at 673 K. These findings highlight the importance of the heterophase and doping control, which determines both electrical and thermal properties.

AC-Impedance Spectroscopic Analysis on the Charge Transport in CVD-Grown Graphene Devices with Chemically Modified Substrates.

A comprehensive study for the effect of interfacial buffer layers on the electrical transport behavior in CVD-grown graphene based devices has been performed by ac-impedance spectroscopy (IS) analysis. We examine the effects of the trap charges at graphene/SiO2 interface on the total capacitance by introducing self-assembled monolayers (SAMs). Furthermore, the charge transports in the polycrystalline graphene are characterized through the temperature-dependent IS measurement, which can be explained by the potential barrier model. The frequency-dependent conduction reveals that the conductivity of graphene is related with the mobility, which is limited by the scattering caused by charged adsorbates on SiO2 surface.

Direct Determination of Field Emission across the Heterojunctions in a ZnO/Graphene Thin-Film Barristor.

Graphene barristors are a novel type of electronic switching device with excellent performance, which surpass the low on-off ratios that limit the operation of conventional graphene transistors. In barristors, a gate bias is used to vary graphene's Fermi level, which in turn controls the height and resistance of a Schottky barrier at a graphene/semiconductor heterojunction. Here we demonstrate that the switching characteristic of a thin-film ZnO/graphene device with simple geometry results from tunneling current across the Schottky barriers formed at the ZnO/graphene heterojunctions. Direct characterization of the current-voltage-temperature relationship of the heterojunctions by ac-impedance spectroscopy reveals that this relationship is controlled predominantly by field emission, unlike most graphene barristors in which thermionic emission is observed. This governing mechanism makes the device unique among graphene barristors, while also having the advantages of simple fabrication and outstanding performance.

Deposition of n-Type Bi2Te3 Thin Films on Polyimide by Using RF Magnetron Co-Sputtering Method.

Bi2Te3 thermoelectric thin films were deposited on the flexible polyimide substrates by RF magnetron co-sputtering of a Bi and a Te targets. The influence of the substrate temperature and RF power on the microstructure, chemical composition, and the thermoelectric properties of the sputtered films was investigated by using scanning electron microscopy, X-ray diffraction, energy dispersive X-ray spectroscopy, and in-plane resistivity/Seebeck coefficient measurement. It was shown that the thermoelectric properties of the films depend sensitively on the Bi/Te chemical composition ratio and the substrate temperature, and the layered structure was clearly observed from the cross section of the (00L)-oriented, nearly stoichiometric Bi2Te3 films when the substrate temperature is higher than 250 °C. As-deposited Bi2Te3 films deposited at 300 °C show the highest power factor of 0.97 mW/K(2)m and the Seebeck coefficient of -193 µV/K at 32 °C, which also have (00L) preferred orientation and the layered structure. The durability of the Bi2Te3 films on polyimide against repeated bending was also tested by monitoring the film resistance, and it was concluded that the Bi2Te3 films are applicable reliably on the curved surfaces with the radius of curvature larger than 5 mm.

High-mobility ambipolar ZnO-graphene hybrid thin film transistors.

In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of 329.7 ± 16.9 cm(2)/V·s, and a high on-off ratio of 10(5). The ambipolar behavior of the ZnO/graphene hybrid TFT with high electron mobility could be due to the superimposed density of states involving the donor states in the bandgap of ZnO thin films and the linear dispersion of monolayer graphene. We further established an applicable circuit model for understanding the improvement in carrier mobility of ZnO/graphene hybrid TFTs.