Active-matrix digital microfluidics design for field programmable high-throughput digitalized liquid handling.

Digital liquid sample handling is an enabling tool for cutting-edge life-sciences research. We present here an active-matrix thin-film transistor (TFT) based digital microfluidics system, referred to as Field Programmable Droplet Array (FPDA). The system contains 256 × 256 pixels in an active area of 10.65 cm2, which can manipulate thousands of addressable liquid droplets simultaneously. By leveraging a novel TFT device and circuits design solution, we manage to programmatically manipulate droplets at single-pixel level. The minimum achievable droplet volume is around 0.5 nL, which is two orders of magnitude smaller than the smallest droplet ever reported on active-matrix digital microfluidics. The movement of droplets can be either pre-programmed or controlled in real-time. The FPDA system shows great potential of the ubiquitous thin-film electronics technology in digital liquid handling. These efforts will make it possible to create a true programmable lab-on-a-chip device to enable great advances in life science research.

Memristor-based adaptive neuromorphic perception in unstructured environments.

Efficient operation of control systems in robotics or autonomous driving targeting real-world navigation scenarios requires perception methods that allow them to understand and adapt to unstructured environments with good accuracy, adaptation, and generality, similar to humans. To address this need, we present a memristor-based differential neuromorphic computing, perceptual signal processing, and online adaptation method providing neuromorphic style adaptation to external sensory stimuli. The adaptation ability and generality of this method are confirmed in two application scenarios: object grasping and autonomous driving. In the former, a robot hand realizes safe and stable grasping through fast ( ~ 1 ms) adaptation based on the tactile object features with a single memristor. In the latter, decision-making information of 10 unstructured environments in autonomous driving is extracted with an accuracy of 94% with a 40×25 memristor array. By mimicking human low-level perception mechanisms, the electronic neuromorphic circuit-based method achieves real-time adaptation and high-level reactions to unstructured environments.

A 54 µW CMOS Auto-Trimming Bandgap References (ATBGR) Achieving 90 dB PSRR for Artificial Intelligence of Things (AIoT) Chips.

An Auto-Trimming CMOS Bandgap References Circuit (ATBGR) with PSRR enhancement circuit for Artificial Intelligence of Things (AIoT) chips is presented in this paper. The ATBGR is designed with a first-order temperature compensation technique providing a stable reference voltage of 1.25 V in the ranges of input voltages from 1.65 V to 4.5 V. An auto-trimming circuit is integrated into a PTAT resistor of BGR to minimize the influences of the process variations. The four parallel resistor pairs with PMOS switches are connected in series with the PTAT resistor. The reference voltage, VREF, is compared to an external constant value, 1.25 V, through an operational amplifier, and the output of the de-multiplexer is used to configure the PMOS switches. High power supply rejection is achieved through a PSRR enhancement circuit constituting a cascaded PMOS common gate pair. The ATBGR circuit is fabricated in 180 nm CMOS technology, consuming an area of 0.03277 mm2. The auto-trimming method yields an average temperature coefficient of 9.99 ppm/°C with temperature ranges from -40 °C to 125 °C, and a power supply rejection ratio of -90 dB at 100 MHz is obtained. The line regulation of the proposed circuit is 0.434%/V with power consumption of 54.12 µW at room temperature.

A State-of-the-Art Review on CMOS Radio Frequency Power Amplifiers for Wireless Communication Systems.

Wireless communication systems have undergone significant development in recent years, particularly with the transition from fourth generation (4G) to fifth generation (5G). As the number of wireless devices and mobile data usage increase, there is a growing need for enhancements and upgrades to the current wireless communication systems. CMOS transceivers are increasingly being explored to meet the requirements of the latest wireless communication protocols and applications while achieving the goal of system-on-chip (SoC). The radio frequency power amplifier (RFPA) in a CMOS transmitter plays a crucial role in amplifying RF signals and transmitting them from the antenna. This state-of-the-art review paper presents a concise discussion of the performance metrics that are important for designing a CMOS PA, followed by an overview of the trending research on CMOS PA techniques that focuses on efficiency, linearity, and bandwidth enhancement.

A Wide-Bandwidth PVT-Reconfigurable CMOS Power Amplifier with an Integrated Tunable-Output Impedance Matching Network.

This paper proposes a wideband CMOS power amplifier (PA) with integrated digitally assisted wideband pre-distorter (DAWPD) and a transformer-integrated tunable-output impedance matching network. As a continuation of our previous research, which focused only on linearization tuning for wideband and PVT, this work emphasized improving the maximum output power, gain and PAE across the PVT variations while maintaining the linearity for a wide frequency bandwidth of 1 GHz. The DAWPD is employed at the driver stage to realize a pre-distorting characteristic for wideband linearization. The addition of the tunable-output impedance matching technique in this work provides stable output power, PAE and gain across the PVT variations, through which it improves the design's robustness, reliability and production yield. Fabricated in CMOS 130 nm with an 8-metal-layer process, the DAWPD-PA with tunable-output impedance matching can achieve an operating frequency bandwidth of 1 GHz from 1.7 to 2.7 GHz. The DAWPD-PA attained a maximum output power of 27 to 28 dBm with a peak PAE of 38.8 to 41.3%. The power gain achieved was 26.9 to 29.7 dB across the targeted frequencies. In addition, when measured with a 20 MHz LTE modulated signal, the DAWPD-PA achieved a linear output power and PAE of 24.0 to 25.1 dBm and 34.5 to 38.8% across the frequency, respectively. On top of that, in this study, the DAWPD-PA is proven to be resilient to process-voltage-temperature (PVT) variations, where it achieves stable performances via the utilization of the proposed tuning mechanisms, mainly contributed by the proposed transformer-integrated tunable-output impedance matching network.

A 53-µA-Quiescent 400-mA Load Demultiplexer Based CMOS Multi-Voltage Domain Low Dropout Regulator for RF Energy Harvester.

A low-power capacitorless demultiplexer-based multi-voltage domain low-dropout regulator (MVD-LDO) with 180 nm CMOS technology is proposed in this work. The MVD-LDO has a 1.5 V supply voltage headroom and regulates an output from four voltage domains ranging from 0.8 V to 1.4 V, with a high current efficiency of 99.98% with quiescent current of 53 µA with the aid of an integrated low-power demultiplexer controller which consumes only 68.85 pW. The fabricated chip has an area of 0.149 mm2 and can deliver up to 400 mA of current. The MVD-LDO's line and load regulations are 1.85 mV/V and 0.0003 mV/mA for the low-output voltage domain and 3.53 mV/V and 0.079 mV/mA for the high-output voltage domain. The LDO consumes only 174.5 µW in standby mode, making it suitable for integrating with an RF energy harvester chip to power sensor nodes.

CMOS Radio Frequency Energy Harvester (RFEH) with Fully On-Chip Tunable Voltage-Booster for Wideband Sensitivity Enhancement.

Radio frequency energy harvesting (RFEH) is one form of renewable energy harvesting currently seeing widespread popularity because many wireless electronic devices can coordinate their communications via RFEH, especially in CMOS technology. For RFEH, the sensitivity of detecting low-power ambient RF signals is the utmost priority. The voltage boosting mechanisms at the input of the RFEH are typically applied to enhance its sensitivity. However, the bandwidth in which its sensitivity is maintained is very poor. This work implements a tunable voltage boosting (TVB) mechanism fully on-chip in a 3-stage cross-coupled differential drive rectifier (CCDD). The TVB is designed with an interleaved transformer architecture where the primary winding is implemented to the rectifier, while the secondary winding is connected to a MOSFET switch that tunes the inductance of the network. The TVB enables the sensitivity of the rectifier to be maintained at 1V DC output voltage with a minimum deviation of -2 dBm across a wide bandwidth of 3 to 6 GHz of 5G New Radio frequency (5GNR) bands. A DC output voltage of 1 V and a peak PCE of 83% at 3 GHz for -23 dBm input power are achieved. A PCE of more than 50% can be maintained at the sensitivity point of 1 V with the aid of TVB. The proposed CCDD-TVB mechanism enables the CMOS RFEH to be operated for wideband applications with optimum sensitivity, DC output voltage, and efficiency.

Tail state mediated conduction in zinc tin oxide thinfilm phototransistors under below bandgap optical excitation.

We report on the appearance of a strong persistent photoconductivity (PPC) and conductor-like behaviour in zinc tin oxide (ZTO) thinfilm phototransistors. The active ZTO channel layer was prepared by remote plasma reactive sputtering and possesses an amorphous structure. Under sub-bandgap excitation of ZTO with UV light, the photocurrent reaches as high as ~ 10-4 A (a photo-to-dark current ratio of ~ 107) and remains close to this high value after switching off the light. During this time, the ZTO TFT exhibits strong PPC with long-lasting recovery time, which leads the appearance of the conductor-like behaviour in ZTO semiconductor. In the present case, the conductivity changes over six orders of magnitude, from ~ 10-7 to 0.92/Ω/cm. After UV exposure, the ZTO compound can potentially remain in the conducting state for up to a month. The underlying physics of the observed PPC effect is investigated by studying defects (deep states and tail states) by employing a discharge current analysis (DCA) technique. Findings from the DCA study reveal direct evidence for the involvement of sub-bandgap tail states of the ZTO in the strong PPC, while deep states contribute to mild PPC.

Energy Autonomous Sweat-Based Wearable Systems.

The continuous operation of wearable electronics demands reliable sources of energy, currently met through Li-ion batteries and various energy harvesters. These solutions are being used out of necessity despite potential safety issues and unsustainable environmental impact. Safe and sustainable energy sources can boost the use of wearables systems in diverse applications such as health monitoring, prosthetics, and sports. In this regard, sweat- and sweat-equivalent-based studies have attracted tremendous attention through the demonstration of energy-generating biofuel cells, promising power densities as high as 3.5 mW cm-2 , storage using sweat-electrolyte-based supercapacitors with energy and power densities of 1.36 Wh kg-1 and 329.70 W kg-1 , respectively, and sweat-activated batteries with an impressive energy density of 67 Ah kg-1 . A combination of these energy generating, and storage devices can lead to fully energy-autonomous wearables capable of providing sustainable power in the µW to mW range, which is sufficient to operate both sensing and communication devices. Here, a comprehensive review covering these advances, addressing future challenges and potential solutions related to fully energy-autonomous wearables is presented, with emphasis on sweat-based energy storage and energy generation elements along with sweat-based sensors as applications.

An Impedance Sensing Platform for Monitoring Heterogeneous Connectivity and Diagnostics in Lab-on-a-Chip Systems.

Reliable hardware connectivity is vital in heterogeneous integrated systems. For example, in digital microfluidics lab-on-a-chip systems, there are hundreds of physical connections required between a microelectromechanical fabricated device and the driving system that can be remotely located on a printed circuit board. Unfortunately, the connection reliability cannot be checked or monitored by vision-based detection methods that are commonly used in the semiconductor industry. Therefore, a sensing platform that can be seamlessly integrated into existing digital microfluidics systems and provide real-time monitoring of multiconnectivity is highly desired. Here, we report an impedance sensing platform that can provide fast detection of a single physical connection in timescales of milliseconds. Once connectivity is established, the same setup can be used to determine the droplet location. The sensing system can be scaled up to support multiple channels or applied to other heterogeneously integrated systems that require real-time monitoring and diagnostics of multiconnectivity systems.

Printed subthreshold organic transistors operating at high gain and ultralow power.

Overcoming the trade-offs among power consumption, fabrication cost, and signal amplification has been a long-standing issue for wearable electronics. We report a high-gain, fully inkjet-printed Schottky barrier organic thin-film transistor amplifier circuit. The transistor signal amplification efficiency is 38.2 siemens per ampere, which is near the theoretical thermionic limit, with an ultralow power consumption of <1 nanowatt. The use of a Schottky barrier for the source gave the transistor geometry-independent electrical characteristics and accommodated the large dimensional variation in inkjet-printed features. These transistors exhibited good reliability with negligible threshold-voltage shift. We demonstrated this capability with an ultralow-power high-gain amplifier for the detection of electrophysiological signals and showed a signal-to-noise ratio of >60 decibels and noise voltage of <0.3 microvolt per hertz1/2 at 100 hertz.

Optical-reconfigurable carbon nanotube and indium-tin-oxide complementary thin-film transistor logic gates.

Optically transparent thin-film transistors (TFTs) have recently attracted significant attention for a new generation of transparent electronics where p- and n-channel transistors form the basic building block for complementary analog and digital integrated circuits (ICs). This paper reports a hybrid integration of p-channel carbon nanotube (CNT) and n-channel junctionless indium-tin-oxide (ITO) TFTs using a simple and cost-effective shadow mask-assisted fabrication process. The fabricated devices exhibit a high transmittance of ∼90% in the visible light region and function as inverters, NAND and NOR gates. More interestingly, distinct optoelectronic responses of the CNT- and ITO-TFTs to ultraviolet light have been clearly observed. In addition to conventional electrically gated logic operations, simple optical-reconfigurable logic operations have been realized with hybrid CNT/ITO-TFT based logic gates. The results suggest that introducing optical-modulation to the logic gates could increase the functionalities compared with the traditional electrically driven counterparts.

Dirac-Point Shift by Carrier Injection Barrier in Graphene Field-Effect Transistor Operation at Room Temperature.

A positive shift in the Dirac point in graphene field-effect transistors was observed with Hall-effect measurements coupled with Kelvin-probe measurements at room temperature. This shift can be explained by the asymmetrical behavior of the contact resistance by virtue of the electron injection barrier at the source contact. As an outcome, an intrinsic resistance is given to allow a retrieval of an intrinsic carrier mobility found to be decreased with increasing gate bias, suggesting the dominance of short-range scattering in a single-layer graphene field-effect transistor. These results analytically correlate the field-effect parameters with intrinsic graphene properties.

Dye-Assisted Transformation of Cu2O Nanocrystals to Amorphous Cu x O Nanoflakes for Enhanced Photocatalytic Performance.

Amorphous Cu x O nanoflakes with a thickness of 10-50 nm were synthesized through dye-assisted transformation of rhombic dodecahedral Cu2O nanocrystals using a facile solution process. The morphology evolution observed by electron microscopy is highly dependent on the reaction between the surface and the dye. The crystal grain shrinks during the process until the formation of a purely amorphous nanoflake. The amorphous Cu x O nanoflake consists of a combination of Cu(I) and Cu(II) with a ratio close to 1:1. It shows enhanced photocatalytic reactivity toward the degradation of methyl orange compared to that of rhombic dodecahedral Cu2O nanocrystals with all active (110):Cu facets. The chemical composition and architecture remain the same after repeating degradation tests. The high surface-to-volume ratio contributes to its superior photocatalytic performance, whereas its low surface energy, confirmed by density functional theory simulations, explains its improved stability. The nanoflakes also show the ability of degrading nitrobenzene effectively, thus demonstrating great promise as a highly stable and active photocatalyst for environmental applications.

Boosting the efficiency of inverted quantum dot light-emitting diodes by balancing charge densities and suppressing exciton quenching through band alignment.

We report an inverted and multilayer quantum dot light emitting diode (QLED) which boosts high efficiency by tuning the energy band alignment between charge transport and light emitting layers. The electron transport layer (ETL) was ZnO nanoparticles (NPs) with an optimized doping concentration of cesium azide (CsN3) to effectively reduce electron flow and balance charge injection. This is by virtue of a 0.27 eV upshift of the ETL's conduction band edge, which inhibits the quenching of excitons and preserves the superior emissive properties of the quantum dots due to the insulating characteristics of CsN3. The demonstrated QLED exhibits a peak current efficiency, power efficiency and external quantum efficiency of up to 13.5 cd A-1, 10.6 lm W-1 and 13.4% for the red QLED, and correspondingly 43.1 cd A-1, 33.6 lm W-1 and 9.1% for green, and 4.1 cd A-1, 2.0 lm W-1 and 6.6% for the blue counterparts. Compared with QLEDs without optimization, the performance of these modified devices shows drastic improvement by 95.6%, 39.4% and 36.7%, respectively. This novel device architecture with heterogeneous energy levels reported here offers a new design strategy for next-generation high efficiency QLED displays and solid-state lighting technologies.

Surface/Interface Carrier-Transport Modulation for Constructing Photon-Alternative Ultraviolet Detectors Based on Self-Bending-Assembled ZnO Nanowires.

Surface/interface charge-carrier generation, diffusion, and recombination/transport modulation are especially important in the construction of photodetectors with high efficiency in the field of nanoscience. In the paper, a kind of ultraviolet (UV) detector is designed based on ZnO nanostructures considering photon-trapping, surface plasmonic resonance (SPR), piezophototronic effects, interface carrier-trapping/transport control, and collection. Through carefully optimized surface/interface carrier-transport modulation, a designed device with detectivity as high as 1.69 × 1016/1.71 × 1016 cm·Hz1/2/W irradiating with 380 nm photons under ultralow bias of 0.2 V is realized by alternating nanoparticle/nanowire active layers, respectively, and the designed UV photodetectors show fast and slow recovery processes of 0.27 and 4.52 ms, respectively, which well-satisfy practical needs. Further, it is observed that UV photodetection could be performed within an alternative response by varying correlated key parameters, through efficient surface/interface carrier-transport modulation, spectrally resolved photoresponse of the detector revealing controlled detection in the UV region based on the ZnO nanomaterial, photodetection allowed or limited by varying the active layers, irradiation distance from one of the electrodes, standing states, or electric field. The detailed carrier generation, diffusion, and recombination/transport processes are well illustrated to explain charge-carrier dynamics contributing to the photoresponse behavior.

Self-Assembled Molecular Nanowires for High-Performance Organic Transistors.

While organic semiconductors provide tantalizing possibilities for low-cost, light-weight, flexible electronic devices, their current use in transistors-the fundamental building block-is rather limited as their speed and reliability are not competitive with those of their inorganic counterparts and are simply too poor for many practical applications. Through self-assembly, highly ordered nanostructures can be prepared that have more competitive transport characteristics; however, no simple, scalable method has been discovered that can produce devices on the basis of such nanostructures. Here, we show how transistors of self-assembled molecular nanowires can be fabricated using a scalable, gradient sublimation technique, which have dramatically improved characteristics compared to those of their thin-film counterparts, both in terms of performance and stability. Nanowire devices based on copper phthalocyanine have been fabricated with threshold voltages as low as -2.1 V, high on/off ratios of 105, small subthreshold swings of 0.9 V/decade, and mobilities of 0.6 cm2/V s, and lower trap energies as deduced from temperature-dependent properties, in line with leading organic semiconductors involving more complex fabrication. High-performance transistors manufactured using our scalable deposition technique, compatible with flexible substrates, could enable integrated all-organic chips implementing conventional as well as neuromorphic computation and combining sensors, logic, data storage, drivers, and displays.

Ultrathin Multifunctional Graphene-PVDF Layers for Multidimensional Touch Interactivity for Flexible Displays.

This paper presents a flexible graphene/polyvinylidene difluoride (PVDF)/graphene sandwich for three-dimensional touch interactivity. Here, x-y plane touch is sensed using graphene capacitive elements, while force sensing in the z-direction is by a piezoelectric PVDF/graphene sandwich. By employing different frequency bands for the capacitive- and force-induced electrical signals, the two stimuli are detected simultaneously, achieving three-dimensional touch sensing. Static force sensing and elimination of propagated stress are achieved by augmenting the transient piezo output with the capacitive touch, thus overcoming the intrinsic inability of the piezoelectric material in detecting nontransient force signals and avoiding force touch mis-registration by propagated stress.

Controlling Surface Termination and Facet Orientation in Cu2O Nanoparticles for High Photocatalytic Activity: A Combined Experimental and Density Functional Theory Study.

Cu2O nanoparticles with controllable facets are of great significance for photocatalysis. In this work, the surface termination and facet orientation of Cu2O nanoparticles are accurately tuned by adjusting the amount of hydroxylamine hydrochloride and surfactant. It is found that Cu2O nanoparticles with Cu-terminated (110) or (111) surfaces show high photocatalytic activity, while other exposed facets show poor reactivity. Density functional theory simulations confirm that sodium dodecyl sulfate surfactant can lower the surface free energy of Cu-terminated surfaces, increase the density of exposed Cu atoms at the surfaces and thus benefit the photocatalytic activity. It also shows that the poor reactivity of the Cu-terminated Cu2O (100) surface is due to the high energy barrier of holes at the surface region.

Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain.

The quest for low power becomes highly compelling in newly emerging application areas related to wearable devices in the Internet of Things. Here, we report on a Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating in the deep subthreshold regime (i.e., near the OFF state) at low supply voltages (<1 volt) and ultralow power (<1 nanowatt). By using a Schottky-barrier at the source and drain contacts, the current-voltage characteristics of the transistor were virtually channel-length independent with an infinite output resistance. It exhibited high intrinsic gain (>400) that was both bias and geometry independent. The transistor reported here is useful for sensor interface circuits in wearable devices where high current sensitivity and ultralow power are vital for battery-less operation.