1.
ACS Appl Mater Interfaces
; 8(32): 21089-94, 2016 Aug 17.
Artigo
em Inglês
| MEDLINE
| ID: mdl-27459343
RESUMO
Nitrogen incorporation to produce negative fixed charge in Al2O3 gate insulator layers is investigated as a path to achieve enhancement mode GaN device operation. A uniform distribution of nitrogen across the resulting AlOxNy films is obtained using N2 plasma enhanced atomic layer deposition (ALD). The flat band voltage (Vfb) increases to a significantly more positive value with increasing nitrogen concentration. Insertion of a 2 nm thick Al2O3 interlayer greatly decreases the trap density of the insulator/GaN interface, and reduces the voltage hysteresis and frequency dispersion of gate capacitance compared to single-layer AlOxNy gate insulators in GaN MOSCAPs.
2.
Rev Med Chir Soc Med Nat Iasi
; 87(2): 283-4, 1983.
Artigo
em Romano
| MEDLINE
| ID: mdl-6675138