Trade-offs in ecosystem impacts from nanomaterial versus organic chemical ultraviolet filters in sunscreens.

Both nanoparticulate (nZnO and nTiO2) and organic chemical ultraviolet (UV) filters are active ingredients in sunscreen and protect against skin cancer, but limited research exists on the environmental effects of sunscreen release into aquatic systems. To examine the trade-offs of incorporating nanoparticles (NPs) into sunscreens over the past two decades, we targeted endpoints sensitive to the potential risks of different UV filters: solar reactive oxygen production in water and disruption of zebrafish embryo development. First, we developed methodology to extract nanoparticles from sunscreens with organic solvents. Zebrafish embryos exposed to parts-per-million NPs used in sunscreens displayed limited toxicological effects; nZnO particles appeared to be slightly more toxic than nTiO2 at the highest concentrations. In contrast, seven organic UV filters did not affect zebrafish embryogenesis at or near aqueous solubility. Second, to simulate potent photo-initiated reactions upon release into water, we examined methylene blue (MB) degradation under UV light. nTiO2 from sunscreen caused 10 times faster MB loss than nZnO and approached the photocatalytic degradation rate of a commercial nTiO2 photocatalysts (P25). Organic UV filters did not cause measurable MB degradation. Finally, we estimated that between 1 and 10 ppm of sunscreen NPs in surface waters could produce similar steady state hydroxyl radical concentrations as naturally occurring fluvic acids under sunlight irradiation. Incorporation of NPs into sunscreen may increase environmental concentrations of reactive oxygen, albeit to a limited extent, which can influence transformation of dissolved substances and potentially affect ecosystem processes.

Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating.

The atomic-layer (AL) doping technique in epitaxy has attracted attention as a low-resistive ultrathin semiconductor film as well as a two-dimensional (2-D) carrier transport system. In this paper, we report carrier properties for B AL-doped Si films with suppressed thermal diffusion. B AL-doped Si films were formed on Si(100) by B AL formation followed by Si cap layer deposition in low-energy Ar plasma-enhanced chemical-vapor deposition without substrate heating. After fabrication of Hall-effect devices with the B AL-doped Si films on unstrained and 0.8%-tensile-strained Si(100)-on-insulator substrates (maximum process temperature 350°C), carrier properties were electrically measured at room temperature. Typically for the initial B amount of 2 × 1014 cm-2 and 7 × 1014 cm-2, B concentration depth profiles showed a clear decay slope as steep as 1.3 nm/decade. Dominant carrier was a hole and the maximum sheet carrier densities as high as 4 × 1013 cm-2 and 2 × 1013 cm-2 (electrical activity ratio of about 7% and 3.5%) were measured respectively for the unstrained and 0.8%-tensile-strained Si with Hall mobility around 10-13 cm2 V-1 s-1. Moreover, mobility degradation was not observed even when sheet carrier density was increased by heat treatment at 500-700 °C. There is a possibility that the local carrier (ionized B atom) concentration around the B AL in Si reaches around 1021 cm-3 and 2-D impurity-band formation with strong Coulomb interaction is expected. The behavior of carrier properties for heat treatment at 500-700 °C implies that thermal diffusion causes broadening of the B AL in Si and decrease of local B concentration.