Observation of Ultrathin Precursor Film Formation during Ge-Si Liquid-Phase Epitaxy from an Undersaturated Solution.

Our in situ X-ray study shows that a silicon substrate in contact with an undersaturated In(Ge) solution is wetted by an approximately 1 nm thin germanium film, which does not grow any thicker. The results can be understood by the use of thickness-dependent correlated interfacial energies. This near-equilibrium heterogeneous interface structure marks the initial stage of crystal growth before the formation of bulk material, which can only form under conditions of supersaturation. This finding uncovers a fundamental aspect of the thermodynamics at solid-liquid interfaces relevant for understanding the transition from equilibrium to supersaturation and is of importance for nanoscale solution growth methods.

The new diffractometer for surface X-ray diffraction at beamline BL9 of DELTA.

The experimental endstation of the hard X-ray beamline BL9 of the Dortmund Electron Accelerator is equipped with a Huber six-circle diffractometer. It is dedicated to grazing-incidence X-ray diffraction and X-ray reflectivity experiments on solid surfaces and thin films as well as to powder diffraction measurements. A new set-up for grazing-incidence X-ray scattering of liquids has been built up using a silicon mirror to reflect the incident X-ray to the liquid surface at angles of incidence around the critical angle of total reflection of the sample. X-ray reflectivity measurements of a polymer film and grazing-incidence X-ray diffraction measurements of an epitaxically grown Gd40Y60 film, an oxidized surface of Fe-15at.%Al alloy and aqueous salt solutions are presented and discussed.