Adhesion Strength Enhancement of Butyl Rubber and Aluminum Using Nanoscale Self-Assembled Monolayers of Various Silane Coupling Agents for Vibration Damping Plates.

In this paper, we enhance the adhesion strength of butyl rubber-based vibrational damping plates using nanoscale self-assembled monolayers of various silane coupling agents. The silane coupling agents used to chemically modify the plate's aluminum surface include 3-aminopropyltriethoxysilane (APTES), (3-glycidyloxypropyl) triethoxysilane (GPTES), 3-mercaptopropyltrimethoxysilane (MPTMS), and 3-(triethoxysilyl)propyl isocyanate (ICPTES). The modified surfaces were analyzed using Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS), and the enhancement in adhesion strength between the rubber and aluminum was estimated through T-Peel tests. As a result, MPTMS showed the highest enhancement in adhesion strength, of approximately 220% compared to the untreated sample, while GPTES, ICPTES, and APTES resulted in adhesion strength enhancements of approximately 200%, 150%, and 130%, respectively.

Dimensionality Engineering of Magnetic Anisotropy from the Anomalous Hall Effect in Synthetic SrRuO3 Crystals.

Magnetic anisotropy in atomically thin correlated heterostructures is essential for exploring quantum magnetic phases for next-generation spintronics. Whereas previous studies have mostly focused on van der Waals systems, here we investigate the impact of dimensionality of epitaxially grown correlated oxides down to the monolayer limit on structural, magnetic, and orbital anisotropies. By designing oxide superlattices with a correlated ferromagnetic SrRuO3 and nonmagnetic SrTiO3 layers, we observed modulated ferromagnetic behavior with the change of the SrRuO3 thickness. Especially, for three-unit-cell-thick layers, we observe a significant 1500% improvement of the coercive field in the anomalous Hall effect, which cannot be solely attributed to the dimensional crossover in ferromagnetism. The atomic-scale heterostructures further reveal the systematic modulation of anisotropy for the lattice structure and orbital hybridization, explaining the enhanced magnetic anisotropy. Our findings provide valuable insights into engineering the anisotropic hybridization of synthetic magnetic crystals, offering a tunable spin order for various applications.

Symmetry Engineering of Epitaxial Hf0.5Zr0.5O2 Ultrathin Films.

Robust ferroelectricity in HfO2-based ultrathin films has the potential to revolutionize nonvolatile memory applications in nanoscale electronic devices because of their compatibility with the existing Si technology. However, to fully exploit the potential of ferroelectric HfO2-based thin films, it is crucial to develop strategies for the controlled stabilization of various HfO2-based polymorphs in nanoscale heterostructures. This study demonstrates how substrate-orientation-induced anisotropic strain can engineer the crystal symmetry, structural domain morphology, and growth orientation of ultrathin Hf0.5Zr0.5O2 (HZO) films. Epitaxial ultrathin HZO films were grown on the heterostructures of (001)- and (110)-oriented La2/3Sr1/3MnO3/SrTiO3 (LSMO/STO) substrate. Various structural analyses revealed that the (110)-oriented substrate promotes a higher degree of structural order (crystallinity) with improved stability of the (111)-oriented orthorhombic phase (Pca21) of HZO. Conversely, the (001)-oriented substrate not only induces a distorted orthorhombic structure but also facilitates the partial stabilization of nonpolar phases. Electrical measurements revealed robust ferroelectric properties in epitaxial thin films without any wake-up effect, where the well-ordered crystal symmetry stabilized by STO(110) facilitated better ferroelectric characteristics. This study suggests that tuning the epitaxial growth of ferroelectric HZO through substrate orientation can improve the stability of the metastable ferroelectric orthorhombic phase and thereby offer a better understanding of device applications.

Intrinsically Stretchable Floating Gate Memory Transistors for Data Storage of Electronic Skin Devices.

To propel electronic skin (e-skin) to the next level by integrating artificial intelligence features with advanced sensory capabilities, it is imperative to develop stretchable memory device technology. A stretchable memory device for e-skin must offer, in particular, long-term data storage while ensuring the security of personal information under any type of deformation. However, despite the significance of these needs, technology related to stretchable memory devices remains in its infancy. Here, we report an intrinsically stretchable floating gate (FG) polymer memory transistor. The device features a dual-stimuli (optical and electrical) writing system to prevent easy erasure of recorded data. An FG comprising an intermixture of Ag nanoparticles and elastomer and with proper energy-band alignment between the semiconductor and dielectric facilitated sustainable memory performance, while achieving a high memory on/off ratio (>105) and a long retention time (106 s) with the ability to withstand 50% uniaxial or 30% biaxial strain. In addition, our memory transistor exhibited high mechanical durability over multiple stretching cycles (1000 times), along with excellent environmental stability with respect to factors such as temperature, moisture, air, and delamination. Finally, we fabricated a 7 × 7 active-matrix memory transistor array for personalized storage of e-skin data and successfully demonstrated its functionality.

Autonomous self-healing supramolecular polymer transistors for skin electronics.

Skin-like field-effect transistors are key elements of bio-integrated devices for future user-interactive electronic-skin applications. Despite recent rapid developments in skin-like stretchable transistors, imparting self-healing ability while maintaining necessary electrical performance to these transistors remains a challenge. Herein, we describe a stretchable polymer transistor capable of autonomous self-healing. The active material consists of a blend of an electrically insulating supramolecular polymer with either semiconducting polymers or vapor-deposited metal nanoclusters. A key feature is to employ the same supramolecular self-healing polymer matrix for all active layers, i.e., conductor/semiconductor/dielectric layers, in the skin-like transistor. This provides adhesion and intimate contact between layers, which facilitates effective charge injection and transport under strain after self-healing. Finally, we fabricate skin-like self-healing circuits, including NAND and NOR gates and inverters, both of which are critical components of arithmetic logic units. This work greatly advances practical self-healing skin electronics.

Kinetically controlled metal-elastomer nanophases for environmentally resilient stretchable electronics.

Nanophase mixtures, leveraging the complementary strengths of each component, are vital for composites to overcome limitations posed by single elemental materials. Among these, metal-elastomer nanophases are particularly important, holding various practical applications for stretchable electronics. However, the methodology and understanding of nanophase mixing metals and elastomers are limited due to difficulties in blending caused by thermodynamic incompatibility. Here, we present a controlled method using kinetics to mix metal atoms with elastomeric chains on the nanoscale. We find that the chain migration flux and metal deposition rate are key factors, allowing the formation of reticular nanophases when kinetically in-phase. Moreover, we observe spontaneous structural evolution, resulting in gyrified structures akin to the human brain. The hybridized gyrified reticular nanophases exhibit strain-invariant metallic electrical conductivity up to 156% areal strain, unparalleled durability in organic solvents and aqueous environments with pH 2-13, and high mechanical robustness, a prerequisite for environmentally resilient devices.

Skin-Mountable Functional Electronic Materials for Bio-Integrated Devices.

Skin-mountable electronic materials are being intensively evaluated for use in bio-integrated devices that can mutually interact with the human body. Over the past decade, functional electronic materials inspired by the skin are developed with new functionalities to address the limitations of traditional electronic materials for bio-integrated devices. Herein, the recent progress in skin-mountable functional electronic materials for skin-like electronics is introduced with a focus on five perspectives that entail essential functionalities: stretchability, self-healing ability, biocompatibility, breathability, and biodegradability. All functionalities are advanced with each strategy through rational material designs. The skin-mountable functional materials enable the fabrication of bio-integrated electronic devices, which can lead to new paradigms of electronics combining with the human body.

Anti-Neuroinflammatory Effects of Arecae pericarpium on LPS-Stimulated BV2 Cells.

Arecae pericarpium (AP), the fruit peel of the betel palm, is a traditional Oriental herbal medicine. AP is used to treat various diseases and conditions, such as ascites, edema, and urinary retention, in traditional Korean medicine. Recent studies have demonstrated its anti-obesity and antibacterial effects; however, its anti-neuroinflammatory effects have not yet been reported. Therefore, we investigated the anti-neuroinflammatory effects of AP on lipopolysaccharide (LPS)-stimulated mouse microglia in this study. To determine the anti-neuroinflammatory effects of AP on BV2 microglial cells, we examined the production of nitric oxide (NO) using Griess assay and assessed the mRNA expression levels of inflammatory mediators, such as inducible NO synthase (iNOS) and cyclooxygenase (COX)-2, and pro-inflammatory cytokines, such as interleukin (IL)-1ß, IL-6, and tumor necrosis factor (TNF)-α, using a real-time reverse transcription-polymerase chain reaction. Furthermore, we determined the levels of mitogen-activated protein kinases and IκBα via Western blotting to understand the regulating mechanisms of AP. AP treatment decreased NO production in LPS-stimulated BV2 cells. Additionally, AP suppressed the expression of iNOS and COX-2 and the production of pro-inflammatory cytokines. AP also inhibited the activation of p38 and nuclear factor-kappa B (NF-κB) in LPS-stimulated BV2 cells. Therefore, AP exerts anti-neuroinflammatory effects via inactivation of the p38 and NF-κB pathways.

Enhanced Electrical and Optical Properties of Bismuth Tantalum Oxide Thin Films through Graphene Oxide Doping.

In this study, a hybrid thin film was fabricated by doping graphene oxide in a bismuth tantalum oxide solution in the sol-gel state. The thin film was produced by a brush-coating process. The graphene oxide doping ratios used were 0, 5, and 15 wt %. In the process of producing the thin film, the prepared sol-gel solution generates contraction forces, owing to the shear stress from the bristles of the brush, forming a microgroove structure. This structure was confirmed through atomic force microscopy, transmission electron microscopy, and energy-dispersive spectroscopy analyses. As a result of line profile analysis in atomic force microscopy, the groove heights of the thin film surface at 0, 5, and 15 wt % doping were 110, 130, and 160 nm, respectively, and the width of all grooves was 1 µm. The width of all thin films was approximately 1 µm, and microgrooves were confirmed. Moreover, the hybrid thin-film formation was confirmed by X-ray photoelectron spectroscopy. By comparing the electrical properties of the bismuth tantalum oxide thin film without graphene oxide doping and the thin film doped with 15 wt % graphene oxide, it was demonstrated that the electro-optical properties increased excellently with graphene oxide doping. Typically, the threshold voltage was reduced by approximately 0.26 V. Based on these observations, graphene oxide doped bismuth tantalum oxide hybrid thin films can be considered as promising candidates for thin-film applications in next-generation displays.

Advanced thin films of indium-tin oxide doping with photosensitive polymer via embossing process.

We propose a sol-gel thin film formation process involving nanoimprint lithography. First, indium tin oxide was dissolved in 2-methoxyethanol at a ratio of 5:5 and the mixture were mixed with 10 wt% of a UV-curable. Subsequently, a polydimethylsiloxane sheet prepared by covering a silicon wafer with a polydimethylsiloxane mold was attached to a InSnO thin film to duplicate the nanostructure through UV irradiation exposure. The replicated nanostructured thin films formed about morphological and chemical composition changes on the surface, we progressed to x-ray photoelectron spectroscopy and atomic force microscopy analysis. Furthermore, atomic force microscopy image analysis showed superior patterned grooves for a UV exposure time of 3 min. A suitability test involving the measurement of the transmittance was performed for examining the suitability of the thin film for use in display devices.

High electrical characteristics through graphene oxide doping process on physicochemically reformed inorganic thin films.

This study investigated the improvement of the electro-optical properties of a liquid crystal (LC) cell fabricated through brush coating using graphene oxide (GO) doping. The physical deformation of the surface was analyzed using atomic force microscopy. The size of the groove increased as the GO dopant concentration increased, but the direction of the groove along the brush direction was maintained. X-ray photoelectron spectroscopy analysis confirmed that the number of C-C and O-Sn bonds increased as the GO concentration increased. Since the van der Waals force on the surface increases as the number of O-metal bonds increases, we were able to determine why the anchoring energy of the LC alignment layer increased. This was confirmed by residual DC voltage and anchoring energy measurements that were later performed. As the GO concentration increased, the width of the hysteresis curve decreased, indicating that the residual DC voltage decreased. Additionally, the 15% GO-doped sample exhibited a significant increase in its anchoring energy up to 1.34 × 10-3 J/m2, which is similar to that of rubbed polyimide. It also secured a high level of electro-optical properties and demonstrated potential as a next-generation thin-film display despite being produced via a simple brush-coating process.

Guggulsterone protects against lipopolysaccharide-induced inflammation and lethal endotoxemia via heme oxygenase-1.

Guggulsterone (GS) is a phytosterol used to treat inflammatory diseases. Although many studies have examined the anti-inflammatory activities of GS, the detailed mechanisms of GS in lipopolysaccharide (LPS)-induced inflammation and endotoxemia have not yet been examined. Therefore, we investigated the anti-inflammatory effects of GS on LPS-induced inflammation. In murine peritoneal macrophages, the anti-inflammatory activity of GS was primarily mediated by heme oxygenase-1 (HO-1) induction. HO-1 induction by GS was mediated by GSH depletion and reactive oxygen species (ROS) production. The ROS generated by GS caused the phosphorylation of GSK3ß (ser9/21) and p38, leading to the translocation of nuclear factor erythroid-related factor 2 (Nrf2), which ultimately induced HO-1. In addition, GS pretreatment significantly inhibited inducible nitric oxide synthase (iNOS), iNOS-derived NO, and COX-2 protein and mRNA expression, and production of COX-derived prostaglandin PGE2, interleukin (IL)-1ß, IL-6, and tumor necrosis factor-α (TNF-α). In a mouse model of endotoxemia, GS treatment prolonged survival and inhibited the expression of inflammatory mediators, including IL-1ß, IL-6, and TNF-α. GS treatment also inhibited LPS-induced liver injury. These results suggest that GS-induced HO-1 could exert anti-inflammatory effects via ROS-dependent GSK (ser21/9)-p38 phosphorylation and nuclear translocation of Nrf2.

Catechin hydrate ameliorates cerulein­induced chronic pancreatitis via the inactivation of TGF­ß/Smad2 signaling.

Chronic pancreatitis (CP) is a pancreatic inflammatory disease associated with histological changes, including fibrosis, acinar cell loss and immune cell infiltration, and leads to damage of the pancreas, which results in pain, weight loss and loss of pancreas function. Catechin or catechin hydrate (CH) has antioxidant, anticancer and immune­regulatory effects. However, unlike other catechins, the antifibrotic effects of (+)­CH have not been widely studied in many diseases, including CP. Therefore, the anti­fibrotic effects of (+)­CH against CP were evaluated in the present study. To assess the prophylactic effects of CH, (+)­CH (1, 5 or 10 mg/kg) or ethanol was administered 1 h before first cerulein (50 µg/kg) injection. To assess the therapeutic effects, (+)­CH (5 mg/kg) or ethanol was administered after cerulein injection for one or two weeks. In both methods, cerulein was injected intraperitoneally into mice once every hour, six times a day, four times a week, for a total of three weeks, to induce CP. The data showed that (+)­CH markedly inhibited glandular destruction and inflammation during CP. Moreover, (+)­CH prevented pancreatic stellate cell (PSC) activation and the production of extracellular matrix components, such as fibronectin 1 and collagens, which suggested that it may act as a novel therapeutic agent. Furthermore, the mechanism and effectiveness of (+)­CH on pancreatic fibrosis were investigated in isolated PSCs. (+)­CH suppressed the activation of Smad2 and fibrosis factors that act through transforming growth factor­ß (TGF­ß) or platelet­derived growth factor. These findings suggest that (+)­CH exhibits antifibrotic effects in cerulein­induced CP by inactivating TGF­ß/Smad2 signaling.

Black Bone Disease: Ochronotic Arthritis Detected during Knee Arthroplasty.

Alkaptonuria is an extremely rare autosomal recessive metabolic disorder characterized by dark urine, ochronosis, and arthritis of the spine and major joints. We report a case of ochronotic arthritis observed during total knee replacement surgery in a 65-year-old male patient with no relevant medical history. Based on a literature review, this is the first case of ochronotic arthritis reported in Korea.

Exotic Magnetic Anisotropy Near Digitized Dimensional Mott Boundary.

The magnetic anisotropy of low-dimensional Mott systems exhibits unexpected magnetotransport behavior useful for spin-based quantum electronics. Yet, the anisotropy of natural materials is inherently determined by the crystal structure, highly limiting its engineering. The magnetic anisotropy modulation near a digitized dimensional Mott boundary in artificial superlattices composed of a correlated magnetic monolayer SrRuO3 and nonmagnetic SrTiO3 , is demonstrated. The magnetic anisotropy is initially engineered by modulating the interlayer coupling strength between the magnetic monolayers. Interestingly, when the interlayer coupling strength is maximized, a nearly degenerate state is realized, in which the anisotropic magnetotransport is strongly influenced by both the thermal and magnetic energy scales. The results offer a new digitized control for magnetic anisotropy in low-dimensional Mott systems, inspiring promising integration of Mottronics and spintronics.

Intrinsically stretchable three primary light-emitting films enabled by elastomer blend for polymer light-emitting diodes.

Intrinsically stretchable light-emitting materials are crucial for skin-like wearable displays; however, their color range has been limited to green-like yellow lights owing to the restricted stretchable light-emitting materials (super yellow series materials). To develop skin-like full-color displays, three intrinsically stretchable primary light-emitting materials [red, green, and blue (RGB)] are essential. In this study, we report three highly stretchable primary light-emitting films made from a polymer blend of conventional RGB light-emitting polymers and a nonpolar elastomer. The blend films consist of multidimensional nanodomains of light-emitting polymers that are interconnected in an elastomer matrix for efficient light-emitting under strain. The RGB blend films exhibited over 1000 cd/m2 luminance with low turn-on voltage (<5 Von) and the selectively stretched blend films on rigid substrate maintained stable light-emitting performance up to 100% strain even after 1000 multiple stretching cycles.

A Hemispherical Image Sensor Array Fabricated with Organic Photomemory Transistors.

Hemispherical image sensors simplify lens designs, reduce optical aberrations, and improve image resolution for compact wide-field-of-view cameras. To achieve hemispherical image sensors, organic materials are promising candidates due to the following advantages: tunability of optoelectronic/spectral response and low-temperature low-cost processes. Here, a photolithographic process is developed to prepare a hemispherical image sensor array using organic thin film photomemory transistors with a density of 308 pixels per square centimeter. This design includes only one photomemory transistor as a single active pixel, in contrast to the conventional pixel architecture, consisting of select/readout/reset transistors and a photodiode. The organic photomemory transistor, comprising light-sensitive organic semiconductor and charge-trapping dielectric, is able to achieve a linear photoresponse (light intensity range, from 1 to 50 W m-2 ), along with a responsivity as high as 1.6 A W-1 (wavelength = 465 nm) for a dark current of 0.24 A m-2 (drain voltage = -1.5 V). These observed values represent the best responsivity for similar dark currents among all the reported hemispherical image sensor arrays to date. A transfer method was further developed that does not damage organic materials for hemispherical organic photomemory transistor arrays. These developed techniques are scalable and are amenable for other high-resolution 3D organic semiconductor devices.

A low-power stretchable neuromorphic nerve with proprioceptive feedback.

By relaying neural signals from the motor cortex to muscles, devices for neurorehabilitation can enhance the movement of limbs in which nerves have been damaged as a consequence of injuries affecting the spinal cord or the lower motor neurons. However, conventional neuroprosthetic devices are rigid and power-hungry. Here we report a stretchable neuromorphic implant that restores coordinated and smooth motions in the legs of mice with neurological motor disorders, enabling the animals to kick a ball, walk or run. The neuromorphic implant acts as an artificial efferent nerve by generating electrophysiological signals from excitatory post-synaptic signals and by providing proprioceptive feedback. The device operates at low power (~1/150 that of a typical microprocessor system), and consists of hydrogel electrodes connected to a stretchable transistor incorporating an organic semiconducting nanowire (acting as an artificial synapse), connected via an ion gel to an artificial proprioceptor incorporating a carbon nanotube strain sensor (acting as an artificial muscle spindle). Stretchable electronics with proprioceptive feedback may inspire the further development of advanced neuromorphic devices for neurorehabilitation.

Mechanically robust stretchable semiconductor metallization for skin-inspired organic transistors.

Despite recent remarkable advances in stretchable organic thin-film field-effect transistors (OTFTs), the development of stretchable metallization remains a challenge. Here, we report a highly stretchable and robust metallization on an elastomeric semiconductor film based on metal-elastic semiconductor intermixing. We found that vaporized silver (Ag) atom with higher diffusivity than other noble metals (Au and Cu) forms a continuous intermixing layer during thermal evaporation, enabling highly stretchable metallization. The Ag metallization maintains a high conductivity (>104 S/cm) even under 100% strain and successfully preserves its conductivity without delamination even after 10,000 stretching cycles at 100% strain and several adhesive tape tests. Moreover, a native silver oxide layer formed on the intermixed Ag clusters facilitates efficient hole injection into the elastomeric semiconductor, which transcends previously reported stretchable source and drain electrodes for OTFTs.

Physicochemically modified high-resolution tin oxide thin film using soft imprinting.

We carried out nanoimprinting lithography on solution-processed tin oxide (SnO) film for use as a liquid crystal (LC) alignment layer, for which we used a parallel configuration. To transfer the nanostructures onto the SnO film, we conducted an experiment according to curing, from which fine nanostructures on the SnO film were obtained at a curing temperature of 200 °C. These acted as a guide for the arrangement of the LC molecules and induced geometric restriction which minimized elastic distortion energies, and so the LC molecules could be aligned in the direction of the nanostructures. The LC alignment state was investigated using polarized optical microscopy, and the pre-tilt angle was measured using a crystal rotation method. With high thermal endurance and drastically low power consumption, the nano patterned SnO was shown to be a promising candidate for LC applications. The nanopatterning process combined with nanoimprinting lithography and solution-processed inorganic materials exhibited the possibility of broadening the features of nanostructure-mounted applications, including LC devices.