Tolerancing of board-level-free-space optical interconnects.

For optical interconnects to become a mature technology they must be amenable to electronic packaging technology. Two main obstacles to including free-space optical interconnects are alignment and heat-dissipation issues. Here we study the issues of alignment tolerancing that are due to assembly and manufacturing variations (passive-element tolerancing) over long board-level distances (>10 cm) for free-space optical interconnects. We also combine these variations with active optoelectronic device variations (active-element tolerancing). We demonstrate a computer-aided analysis procedure that permits one to determine both active- and passive-element tolerances needed to achieve some system-level specification, such as yield or cost. The procedure that we employ relies on developing a detailed design of the system to be studied in a standard optical design program, such as code v. Using information from this model, we can determine the integrated power falling on the detector, which we term optical throughput, by performing Gaussian propagation or general Fresnel propagation (if significant vignetting occurs). This optical throughput can be used to determine system-level performance criteria, such as bit-error rate. With this computer-aided analysis technique, a sensitivity analysis of all the variations under study is made on a system with realistic board-level interconnect distances to find each perturbation's relative effects (with other perturbations set to 0) on the power falling on the detector. This information is used to set initial tolerances for subsequent tolerancing analysis and design runs. A tolerancing analysis by Monte Carlo techniques is applied to determine if the yield or cost (yield is denned as the percentage of systems that have acceptable system performance) is acceptable. With a technique called parametric sampling, a subsequent tolerancing design run can be applied to optimize this yield or cost with little increase in computation. We study a design example and show that most of the tolerances can be achieved with current technology.

Digital free-space optical interconnections: a comparison of transmitter technologies.

We investigate the performance of free-space optical interconnection systems at the technology level. Specifically, three optical transmitter technologies, lead-lanthanum-zirconate-titanate and multiple-quantum-well modulators and vertical-cavity surface-emitting lasers, are evaluated. System performance is measured in terms of the achievable areal data throughput and the energy required per transmitted bit. It is shown that lead-lanthanum-zirconate-titanate modulator and vertical-cavity surface-emitting laser technologies are well suited for applications in which a large fan-out per transmitter is required but the total number of transmitters is relatively small. Multiple-quantum-well modulators, however, are good candidates for applications in which many transmitters with a limited fan-out are needed.

Design considerations and algorithms for partitioning optoelectronic multichip modules.

There is considerable interest in the development of optical interconnects for multichip modules (MCM's) to improve their performance. For effective utilization of the optical and electronic technologies, a methodology for partitioning the system is required. The key question to be answered is which technology should be used for each interconnect in a given netlist: optical or electronic. We introduce the computer-aided design approach for partitioning optoelectronic systems into optoelectronic MCM's. We first discuss the design trade-off issues in an optoelectronic system design, including speed, power dissipation, area, and diffraction limits for free-space optics. We then define a formulation for optoelectronic MCM partitioning and describe new algorithms for optimizing this partitioning based on the minimization of the power dissipation. The models for the algorithms are discussed in detail, and an example of a multistage interconnect network is given. Different results, with the number and size of chips being variable, are presented in which improvement for the system packaging has been observed when the partitioning algorithms are applied.

Monolithic integration of a silicon driver circuit onto a lead lanthanum zirconate titanate substrate for smart spatial light modulator fabrication.

The monolithic integration of N-channel metal-oxide-semiconductor (NMOS) driver circuits in silicon thin films onto a lead lanthanum zirconate titanate (PLZT) substrate is reported. Two integration methods are compared. Both methods result in NMOS transistors that exhibit electrical properties that are close to those of transistors fabricated in bulk silicon. The characteristics of PLZT modulators driven by thin-film transistors are also similar to those of bulk PLZT modulators. These techniques promise new spatial light modulators of high complexity and performance that good-quality silicon and bulk PLZT can offer.

Design issues and development of monolithic silicon/lead lanthanum zirconate titanate integration technologies for smart spatial light modulators.

System, device, and material issues for the design and realization of smart spatial light modulators are discussed. Silicon and lead lanthanum zirconate titanate (PLZT) are two promising materials that meet the system requirements. Two different technologies for the integration of Si and PLZT are described. Results show that large-scale smart spatial light modulators can be realized with Si/PLZT technologies.

Deposition and characterization of thin ferroelectric lead lanthanum zirconate titanate (PLZT) films on sapphire for spatial light modulators applications.

Ferroelectric lead lanthanum zirconate titanate (PLZT) films are deposited on R-plane sapphire using RF triode magnetron sputtering. Perovskite PLZT films with the desired composition (9/65/35) are obtained using compensated deposition techniques around 500 degrees C and postdeposition annealing at 650 degrees C. The deposited films exhibit good optical and electrooptical properties. The room temperature dielectric constant of the films was 1800 at 10 kHz. The refractive index of the films was in the range of 2.2-2.5. The films showed a quadratic electrooptic effect with R=0.6 x10(-16) m(2)/V(2). The development of PLZT on silicon-on-sapphire smart spatial light modulators using these films is also explored.