Effect of Quasi-One-Dimensional Properties on Source/Drain Contacts in Vertical Nanowire Field-Effect Transistors (VNWFETs).

In this study, we investigated the influence of quasi-one-dimensional (Quasi-1D) characteristics on the source and drain contact resistances within vertical nanowire (NW) field-effect transistors (FETs) of diminutive diameter. The top contact of the NW is segregated into two distinct regions: the first encompassing the upper surface, designated as the axial contact, and the second encircling the side surface, known as the radial contact, which is formed during the top-contact metal deposition process. Quantum confinement effects, prominent within Quasi-1D NWs, exert significant constraints on radial transport, consequently inducing a noticeable impact on contact resistance. Notably, in the radial direction, electron tunneling occurs only through quantized, discrete energy levels. Conversely, along the axial direction, electron tunneling freely traverses continuous energy levels. In a meticulous numerical analysis, these disparities in transport mechanisms unveiled that NWs with diameters below 30 nm exhibit a markedly higher radial contact resistance compared to their axial counterparts. Furthermore, an increase in the overlap length (less than 5 nm) contributes to a modest reduction in radial resistance; however, it remains consistently higher than the axial contact resistance.

Improvement of Fermi-Level Pinning and Contact Resistivity in Ti/Ge Contact Using Carbon Implantation.

Effects of carbon implantation (C-imp) on the contact characteristics of Ti/Ge contact were investigated. The C-imp into Ti/Ge system was developed to reduce severe Fermi-level pinning (FLP) and to improve the thermal stability of Ti/Ge contact. The current density (J)-voltage (V) characteristics showed that the rectifying behavior of Ti/Ge contact into an Ohmic-like behavior with C-imp. The lowering of Schottky barrier height (SBH) indicated that the C-imp could mitigate FLP. In addition, it allows a lower specific contact resistivity (ρc) at the rapid thermal annealing (RTA) temperatures in a range of 450-600 °C. A secondary ion mass spectrometry (SIMS) showed that C-imp facilitates the dopant segregation at the interface. In addition, transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) mapping showed that after RTA at 600 °C, C-imp enhances the diffusion of Ge atoms into Ti layer at the interface of Ti/Ge. Thus, carbon implantation into Ge substrate can effectively reduce FLP and improve contact characteristics.

Fabrication and Characterization of Nanonet-Channel LTPS TFTs Using a Nanosphere-Assisted Patterning Technique.

We present the fabrication and electrical characteristics of nanonet-channel (NET) low-temperature polysilicon channel (LTPS) thin-film transistors (TFTs) using a nanosphere-assisted patterning (NAP) technique. The NAP technique is introduced to form a nanonet-channel instead of the electron beam lithography (EBL) or conventional photolithography method. The size and space of the holes in the nanonet structure are well controlled by oxygen plasma treatment and a metal lift-off process. The nanonet-channel TFTs show improved electrical characteristics in terms of the ION/IOFF, threshold voltage, and subthreshold swing compared with conventional planar devices. The nanonet-channel devices also show a high immunity to hot-carrier injection and a lower variation of electrical characteristics. The standard deviation of VTH (σVTH) is reduced by 33% for a nanonet-channel device with a gate length of 3 µm, which is mainly attributed to the reduction of the grain boundary traps and enhanced gate controllability. These results suggest that the cost-effective NAP technique is promising for manufacturing high-performance nanonet-channel LTPS TFTs with lower electrical variations.

Increased Detection of Colorectal Polyps in Screening Colonoscopy Using High Definition i-SCAN Compared with Standard White Light.

BACKGROUND/AIMS: The aim of this study was to evaluate the efficacy of high definition (HD) i-SCAN for colorectal polyp detection in screening colonoscopy. METHODS: We retrospectively analyzed the records of 501 patients who had undergone screening colonoscopy performed by three endoscopists with either HD i-SCAN (n=149) or standard white light (n=352) from January 2, 2014 through June 30, 2014. Patient information and inter-endoscopist variation as well as polyp number, endoscopic findings, and pathologic characteristics were reviewed. RESULTS: The detection rates of colorectal and neoplastic polyps were significantly higher using HD i-SCAN than standard white light colonoscopy (52% vs. 38.1%, p=0.004 for colorectal polyps; and 37.2% vs. 27.9%, p=0.041 for neoplastic polyps). Analysis of endoscopic findings revealed no difference in detected polyp size between HD i-SCAN and standard white light colonoscopy (4.59±2.35 mm vs. 4.82±2.81 mm, p=0.739), but non-protruding polyps were more commonly detected by i-SCAN than by standard white light colonoscopy (24.6% vs. 13.5%, p=0.007). CONCLUSIONS: Colonoscopy using HD i-SCAN had a significantly higher detection rate of colorectal polyps, including neoplastic polyps, because of improved sensitivity for detecting non-protruding lesions.

Angiosarcomas of the bilateral breast and heart: which one is the primary site?

A 29-year-old pregnant woman with recurrent pericardial effusion and a cardiac tumor, diagnosed as an angiosarcoma, was treated with surgical resection of the tumor followed by radiotherapy. Immediately after completion of radiotherapy, she developed bilateral breast masses, which were also confirmed as angiosarcomas. We thought this might be the first case of bilateral angiosarcoma of the breast metastasizing to heart mimicking a primary cardiac angiosarcoma, although we could not conclude with certainty that angiosarcoma of the heart was not the primary site.