Highly sensitive in situ-synthesized cadmium sulfide (CdS) nanowire photosensor for chemiluminescent immunoassays.

Highly sensitive in situ-synthesized cadmium sulfide (CdS) nanowires (NWs) for the detection of chemiluminescence in immunoassays with a photoresist (PR) layer to stabilize the CdS NWs before and after coating with a parylene film were developed. The thickness of the PR layer was controlled by adjusting the viscosity of the PR solution used for spin-coating. PR2005 was the optimal PR for passivation of the NW surface. After the addition of a parylene coating on the CdS NWs, the photocurrent increased by as much as 50% over a broad range of light intensities, and the additional PR layer increased the photoresponse over the whole range of light intensities. When the photoresponses of the CdS NWs with and without the parylene film were compared after the addition of a PR layer, significant differences were observed in the photocurrent behavior after the incident light was turned off. For the CdS NWs with a parylene film and PR layer, the photocurrent reached the baseline within milliseconds of the incident light being turned off. However, the CdS NWs without a parylene film but with a PR layer required >60 s to reach the baseline level. This difference was due to the capacitance arising from the contact between the NWs. The in situ-synthesized CdS NW photosensor passivated by the parylene film and a PR layer was used in a chemiluminescence-based immunoassay. Finally, the detection of human immunodeficiency virus antibodies was demonstrated via a chemiluminescent enzyme-linked immunosorbent assay based on the CdS NW photosensor in comparison with the optical-density measurement for the chromogenic reaction of TMB(3,3',5,5'-Tetramethylbenzidine).

Optical properties and bridge photodetector integration of lead sulfide nanowires.

We studied optical properties and photocurrent characteristics of PbS nanowires grown by chemical vapor deposition. Distinct bandedge photoluminescence (PL) emission was observed in the mid-infrared spectral range and the quantum confinement effect estimated from the PL peak energy was within 40 meV, consistent with the average diameter of the nanowire (∼70 nm) being significantly larger than the exciton Bohr radius (∼18 nm). We also demonstrated interdigit photo detectors making use of these PbS nanowires suspended between two pre-patterned Ti electrodes, where Ti also acted as metal catalyst for the nanowire growth. The threshold wavelength of the photocurrent was found to be ∼3 µm at room temperature.

In situ-synthesized cadmium sulfide nanowire photosensor with a parylene passivation layer for chemiluminescent immunoassays.

The direct in situ synthesis of cadmium sulfide (CdS) nanowires (NWs) was presented by direct synthesis of CdS NWs on the gold surface of an interdigitated electrode (IDE). In this work, we investigated the effect of a strong oxidant on the surfaces of the CdS NWs using X-ray photoelectron spectroscopy, transmission electron microscopy, and time-of-flight secondary ion mass spectrometry. We also fabricated a parylene-C film as a surface passivation layer for in situ-synthesized CdS NW photosensors and investigated the influence of the parylene-C passivation layer on the photoresponse during the coating of parylene-C under vacuum using a quartz crystal microbalance and a photoanalyzer. Finally, we used the in situ-synthesized CdS NW photosensor with the parylene-C passivation layer to detect the chemiluminescence of horseradish peroxidase and luminol and applied it to medical detection of carcinoembryonic antigen.

Chemiluminescent lateral-flow immunoassays by using in-situ synthesis of CdS NW photosensor.

A hypersensitive CdS nanowire (NW) photosensor was fabricated by an in-situ synthesis process that involved the direct synthesis of CdS NWs on an interdigitated electrode (IDE). Analysis of the photoresponse properties showed that the newly synthesized photosensor had enhanced sensitivity and a highly reproducible photoresponse compared to photosensors prepared from CdS NW suspensions. The NW photosensor was applied to measure the chemiluminescence of luminol, and the sensitivity was compared to a commercial photosensing system. Finally, the feasibility of the CdS NW photosensor for the application to the medical diagnosis of the human hepatitis B surface antigen (hHBsAg) was demonstrated using a lateral-flow immunoassay with a chemiluminescent signal band.

Structural Origin of the Band Gap Anomaly of Quaternary Alloy Cd(x)Zn(1-x)S(y)Se(1-y) Nanowires, Nanobelts, and Nanosheets in the Visible Spectrum.

Single-crystalline alloy II-VI semiconductor nanostructures have been used as functional materials to propel photonic and optoelectronic device performance in a broad range of the visible spectrum. Their functionality depends on the stable modulation of the direct band gap (Eg), which can be finely tuned by controlling the properties of alloy composition, crystallinity, and morphology. We report on the structural correlation of the optical band gap anomaly of quaternary alloy CdxZn1-xSySe1-y single-crystalline nanostructures that exhibit different morphologies, such as nanowires (NWs), nanobelts (NBs), and nanosheets (NSs), and cover a wide range of the visible spectrum (Eg = 1.96-2.88 eV). Using pulsed laser deposition, the nanostructures evolve from NWs via NBs to NSs with decreasing growth temperature. The effects of the growth temperature are also reflected in the systematic variation of the composition. The alloy nanostructures firmly maintain single crystallinity of the hexagonal wurtzite and the nanoscale morphology, with no distortion of lattice parameters, satisfying the virtual crystal model. For the optical properties, however, we observed distinct structure-dependent band gap anomalies: the disappearance of bowing for NWs and maximum and slightly reduced bowing for NBs and NSs, respectively. We tried to uncover the underlying mechanism that bridges the structural properties and the optical anomaly using an empirical pseudopotential model calculation of electronic band structures. From the calculations, we found that the optical bowings in NBs and NSs were due to residual strain, by which they are also distinguishable from each other: large for NBs and small for NSs. To explain the origin of the residual strain, we suggest a semiempirical model that considers intrinsic atomic disorder, resulting from the bond length mismatch, combined with the strain relaxation factor as a function of the width-to-thickness ratio of the NBs or NSs. The model agreed well with the observed optical bowing of the alloy nanostructures in which a mechanism for the maximum bowing for NBs is explained. The present systematic study on the structural-optical properties correlation opens a new perspective to understand the morphology- and composition-dependent unique optical properties of II-VI alloy nanostructures as well as a comprehensive strategy to design a facile band gap modulation method of preparing photoconverting and photodetecting materials.

Germanium microflower-on-nanostem as a high-performance lithium ion battery electrode.

We demonstrate a new design of Ge-based electrodes comprising three-dimensional (3-D) spherical microflowers containing crystalline nanorod networks on sturdy 1-D nanostems directly grown on a metallic current collector by facile thermal evaporation. The Ge nanorod networks were observed to self-replicate their tetrahedron structures and form a diamond cubic lattice-like inner network. After etching and subsequent carbon coating, the treated Ge nanostructures provide good electrical conductivity and are resistant to gradual deterioration, resulting in superior electrochemical performance as anode materials for LIBs, with a charge capacity retention of 96% after 100 cycles and a high specific capacity of 1360 mA h g(-1) at 1 C and a high-rate capability with reversible capacities of 1080 and 850 mA h g(-1) at the rates of 5 and 10 C, respectively. The improved electrochemical performance can be attributed to the fast electron transport and good strain accommodation of the carbon-filled Ge microflower-on-nanostem hybrid electrode.

SnO2 nanowire gas sensor operating at room temperature.

The NO2 gas sensor based on SnO2 semiconducting nanowires workable at room temperature has been investigated. The network structure of SnO2 nanowires was fabricated on the electrodes by a simple thermal evaporation process from Sn metal powders and oxygen gas. The diameter of the nanowires was 20-60 nm depending on the processing conditions. When the concentration of NO2 was 10 ppm, the sensitivity of 43, the response time of 38 s, and the recovery time of 25 s were observed at the operating temperature of 200 degrees C. In particular, the operating temperature of the sensor could be decreased down below 50 degrees C by controlling the properties of the nanowires and the structures of the electrodes. The sensitivities were 10-15 when the NO2 concentrations were 10-50 ppm at the operating temperature of 50 degrees C.

Sn-induced low-temperature growth of Ge nanowire electrodes with a large lithium storage capacity.

We herein present the synthesis of germanium (Ge) nanowires on Au-catalyzed low-temperature substrates using a simple thermal Ge/Sn co-evaporation method. Incorporation of a low-melting point metal (Sn) enables the efficient delivery of Ge vapor to the substrate, even at a source temperature below 600 °C. The as-synthesized nanowires were found to be a core/shell heterostructure, exhibiting a uniform single crystalline Ge sheathed within a thin amorphous germanium suboxide (GeO(x)) layer. Furthermore, these high-density Ge nanowires grown directly on metal current collectors can offer good electrical connection and easy strain relaxation due to huge volume expansion during Li ion insertion/extraction. Therefore, the self-supported Ge nanowire electrodes provided excellent large capacity with little fading upon cycling (a capacity of ∼900 mA h g(-1) at 1C rate).

The effect of the concentration and oxidation state of Sn on the structural and electrical properties of indium tin oxide nanowires.

High quality single-crystalline indium tin oxide (ITO) nanowires with controlled Sn contents of up to 32.5 at.% were successfully synthesized via a thermal metal co-evaporation method, based on a vapor-liquid-solid growth mode, at a substrate temperature of as low as 540 °C. The high solubility of Sn in the nanowires was explained with the existence of Sn(2+) ions along with Sn(4+) ions: the coexistence of Sn(2+) and Sn(4+) ions facilitated their high substitutional incorporation into the In(2)O(3) lattice by relaxing structural and electrical disturbances due to the differences in ionic radii and electrical charges between Sn and In(3+) ions. It was revealed that, while the lattice parameter of the ITO nanowires had a minimum value at a Sn content of 6.3 at.%, the electrical resistivity had a minimum value of about 10(-3) Ω cm at a Sn content of 14 at.%. These structural and electrical behaviors were explained by variation in the relative and total amounts of the two species, Sn(2+) and Sn(4+).

Synthesis of Si nanosheets by a chemical vapor deposition process and their blue emissions.

We synthesized free-standing Si nanosheets (NSs) with a thickness of about <2 nm using a chemical vapor deposition process and studied their optical properties. The Si NSs were formed by the formation of frameworks first along six different <110> directions normal to [111], its zone axis, and then by filling the spaces between the frameworks along the <112> directions under high flow rate of processing gas. The Si NSs showed blue emission at 435 nm, and absorbance and photoluminescence (PL) excitation measurements indicate that enhanced direct band transition attributes to the emission. Time-resolved PL measurement, which showed PL emission at 435 nm and a radiative lifetime of 1.346 ns, also indicates the enhanced direct band gap transition in these Si NSs. These outcomes indicate that dimensionality of Si nanostructures may affect the band gap transition and, in turn, the optical properties.

Network-bridge structure of CdSxSe1-x nanowire-based optical sensors.

We report on the synthesis of CdS(x)Se(1-x) nanowires by pulsed-laser deposition and their application to optical sensors. We developed a suspended structure for a nanowire-based optical sensor. This structure comprised separated nanowires that were suspended in the desired position between two pre-patterned electrodes. We found from measuring photoluminescence that the direct bandgap energy of the nanowires changes linearly with the composition of sulfur in the nanowires. These findings show that the bandgap energy of the nanowires can be systematically modulated in the range of 1.7-2.4 eV. The cutoff wavelength of the fabricated optical sensors shifted toward the longer wavelength with increasing sulfur composition. We found that the CdS(x)Se(1-x) nanowires have sufficient potential for a broad band optoelectronic device involving photosensors.

Enhancement of field-emission properties in ZnO nanowire array by post-annealing in H2 ambient.

We studied the effects of post-annealing in H2 and O2 ambients on field-emission properties of vertically-aligned ZnO nanowire arrays synthesized by carbothermal reduction process. The turn-on electric field was dramatically decreased from 3.78 to 2.37 V/microm after post-annealing in H2 ambient, which was explained by both hydrogen passivation effects of deep levels and surface modification. In other words, we could observe significant decrease of deep level peak in photoluminescence measurements on hydrogen post-annealed ZnO nanowire array. And also hydrogen-related bonds are strongly increased from X-ray photoelectron spectroscopy measurements. These findings suggest that the concentration of conduction electrons increased by hydrogen post-annealing, which results in the enhanced tunneling probability of conduction electrons into the vacuum.

Morphological evolution of CdS nanowires to nanosheets.

We report on the formation mechanism of CdS nanosheets based upon extensive scanning electron microscopy and transmission electron microscopy experiments. Two different CdS nanowires were synthesized, whose axial directions are in parallel with [0001] or [0110]. The [0001]-nanowires sustained one-dimensional growth characteristics irrespective of reaction temperature and duration. On the other hand, we observed two-dimensional lateral growth in the [0110]-nanowires. We proposed a three-step process for the morphological evolution of CdS nanowires to nanosheets; (1) nucleation and growth of nanowires by vapor-liquid-solid mechanism, (2) side-branching of secondary nanowires perpendicular to the original nanowires and filling between them by vapor-solid mechanism, and finally (3) formation of nanosheets through the repetition of side-branching and filling processes.

Self-supported SnO2 nanowire electrodes for high-power lithium-ion batteries.

We propose a promising synthetic technique, which we term 'self-supported nanostructuring', for the direct growth of one-dimensional, SnO2 nanowires on the current collector. The technique is based on a vapor-liquid-solid (VLS) mechanism via thermal evaporation at low synthetic temperature (600 degrees C). The as-synthesized SnO2 nanowire electrode did not have any buffer layer prior to the nanowire evolution, and exhibited a single crystalline phase with highly uniform morphology and a thin diameter ranging from 40 to 50 nm with a length of more than 1 microm. The SnO2 nanowire electrode demonstrated stable cycling behaviors and delivered a high specific discharge capacity of 510 mA h g(-1), even at the 50th cycle, which exceeded that of SnO2 nanopowder and Sn nanopowder electrodes. Furthermore, the SnO2 nanowire electrode displayed superior rate capabilities with a rechargeable discharge capacity of 600 mA h g(-1) at 3 C (where 1 C = 782 mA g(-1)), 530 mA h g(-1) at 5 C, and 440 mA h g(-1) at 10 C. Our results support the potential opportunity for developing high-performance Li-ion batteries based on Li-alloying anode materials in terms of high-power density and high-energy density.

Enhanced cycling performance of an Fe0/Fe3O4 nanocomposite electrode for lithium-ion batteries.

We demonstrate the formation of a highly conductive, Fe0/Fe3O4 nanocomposite electrode by the hydrogen reduction process. Fe2O3 nanobundles composed of one-dimensional nanowires were initially prepared through thermal dehydrogenation of hydrothermally synthesized FeOOH. The systematic phase and morphological evolutions from Fe2O3 to Fe2O3/Fe3O4, Fe3O4, and finally to Fe/Fe3O4 by the controlled thermochemical reduction at 300 degrees C in H2 were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM). The Fe/Fe3O4 nanocomposite electrode shows excellent capacity retention ( approximately 540 mA h g(-1) after 100 cycles at a rate of 185 mA g(-1)), compared to that of Fe2O3 nanobundles. This enhanced electrochemical performance in Fe/Fe3O4 composites was attributed to the formation of unique, core-shell nanostructures offering an efficient electron transport path to the current collector.

Structural, optical, and electrical properties of semiconducting ZnO nanosheets.

ZnO nanosheets were fabricated by an oxygen-assisted carbothermal reduction process and their properties were evaluated. In particular, the FET characteristics and photoluminescence properties of ZnO nanosheets were evaluated. The conduction type of ZnO nanosheets was determined as an n-type and the mobility was 20-40 cm2/ V-s, which is fairly high compared to ZnO nanowires. This might be attributed to the wide conduction area of ZnO nanosheet compared to nanowire structures and their better crystallinity.

Dynamic instability of a sol-gel-derived thin film.

We present a study on the dynamic instability of a sol-gel-derived (SG) thin film on a nonwettable substrate. Because of the structural instability accompanied by syneresis stress in a film deposited on the substrate, there exists a regular distribution of dewetting patterns required to relieve the in-plane stress, such as holes in the earlier stages, and droplets accompanying a regular polygonal distribution in the later stages of the dynamic instability. The characteristic length scales in each stage scaled linearly with the film thickness during the duration of dewetting. For the formation of holes during the earlier stages of rupture of the film, the dewetting velocity was analyzed with a viscous sintering theory of a SG thin film. In the earlier stages of the dynamic instability, the dewetting velocity decreases with increasing dewetting time and increases with increasing the initial film thickness, which indicates that the SG thin film behaves partially like a slipping polymer thin film. In the final times of the film rupture, the radius of the hole has a linear relationship with the film thickness, and the growth rate of the hole (dewetting velocity) is nearly constant, regardless of the film thickness. These dewetting behaviors indicate that the SG thin film in the final times of the rupture is somewhat similar to nonslipping film. From these observations, we found that the dewetting behavior of a SG thin film has ambivalent dewetting characteristics of slipping and nonslipping films and that a SG thin film is not a purely viscous film.

Novel fabrication of an SnO(2) nanowire gas sensor with high sensitivity.

We fabricated a nanowire-based gas sensor using a simple method of growing SnO(2) nanowires bridging the gap between two pre-patterned Au catalysts, in which the electrical contacts to the nanowires are self-assembled during the synthesis of the nanowires. The gas sensing capability of this network-structured gas sensor was demonstrated using a diluted NO(2). The sensitivity, as a function of temperature, was highest at 200 °C and was determined to be 18 and 180 when the NO(2) concentration was 0.5 and 5 ppm, respectively. Our sensor showed higher sensitivity compared to different types of sensors including SnO(2) powder-based thin films, SnO(2) coating on carbon nanotubes or single/multiple SnO(2) nanobelts. The enhanced sensitivity was attributed to the additional modulation of the sensor resistance due to the potential barrier at nanowire/nanowire junctions as well as the surface depletion region of each nanowire.

Stable field emission performance of SiC-nanowire-based cathodes.

In this paper we report the fabrication and testing of diode-type low-voltage field emission display (FED) devices with SiC-nanowire-based cathodes. The SiC-nanowire FEDs (flat vacuum lamps) were characterized by low emission threshold fields (∼2 V µm(-1)), high current density and stable long-term performance. The analysis of field emission data evidenced that the Schottky effect would have a considerable influence on the field emission from nanowire-based samples, leading to the true values of the field enhancement factor being significantly lower than those derived from Fowler-Nordheim plots.

Highly conductive coaxial SnO(2)-In(2)O(3) heterostructured nanowires for Li ion battery electrodes.

Novel SnO(2)-In(2)O(3) heterostructured nanowires were produced via a thermal evaporation method, and their possible nucleation/growth mechanism is proposed. We found that the electronic conductivity of the individual SnO(2)-In(2)O(3) nanowires was 2 orders of magnitude better than that of the pure SnO(2) nanowires, due to the formation of Sn-doped In(2)O(3) caused by the incorporation of Sn into the In(2)O(3) lattice during the nucleation and growth of the In(2)O(3) shell nanostructures. This provides the SnO(2)-In(2)O(3) nanowires with an outstanding lithium storage capacity, making them suitable for promising Li ion battery electrodes.