X-band MMICs for a Low-Cost Radar Transmit/Receive Module in 250 nm GaN HEMT Technology.

This paper describes Monolithic Microwave Integrated Circuits (MMICs) for an X-band radar transceiver front-end implemented in 0.25 µm GaN High Electron Mobility Transistor (HEMT) technology. Two versions of single pole double throw (SPDT) T/R switches are introduced to realize a fully GaN-based transmit/receive module (TRM), each of which achieves an insertion loss of 1.21 dB and 0.66 dB at 9 GHz, IP1dB higher than 46.3 dBm and 44.7 dBm, respectively. Therefore, it can substitute a lossy circulator and limiter used for a conventional GaAs receiver. A driving amplifier (DA), a high-power amplifier (HPA), and a robust low-noise amplifier (LNA) are also designed and verified for a low-cost X-band transmit-receive module (TRM). For the transmitting path, the implemented DA achieves a saturated output power (Psat) of 38.0 dBm and output 1-dB compression (OP1dB) of 25.84 dBm. The HPA reaches a Psat of 43.0 dBm and power-added efficiency (PAE) of 35.6%. For the receiving path, the fabricated LNA measures a small-signal gain of 34.9 dB and a noise figure of 2.56 dB, and it can endure higher than 38 dBm input power in the measurement. The presented GaN MMICs can be useful in implementing a cost-effective TRM for Active Electronically Scanned Array (AESA) radar systems at X-band.

A Direct Feedback FVF LDO for High Precision FMCW Radar Sensors in 65-nm CMOS Technology.

A direct feedback flipped voltage follower (FVF) LDO for a high-precision frequency-modulated continuous-wave (FMCW) radar is presented. To minimize the effect of the power supply ripple on the FMCW radar sensor's resolution, a folded cascode error amplifier (EA) was connected to the outer loop of the FVF to increase the open-loop gain. The direct feedback structure enhances the PSRR while minimizing the power supply ripple path and not compromising a transient response. The flipped voltage follower with a super source follower forms a fast feedback loop. The stability and parameter variation sensitivity of the multi-loop FVF LDO were analyzed through the state matrix decomposition. We implemented the FVF LDO in TSMC 65 nm CMOS technology. The fabricated FVF LDO supplied a maximum load current of 20 mA with a 1.2 V power supply. The proposed FVF LDO achieved a full-spectrum PSR with a low-frequency PSRR of 66 dB, unity-gain bandwidth of 469 MHz, and 20 ns transient settling time with a load current step from 1 mA to 20 mA.

A 90 GHz Broadband Balanced 8-Way Power Amplifier for High Precision FMCW Radar Sensors in 65-nm CMOS.

We present a W-band 8-way wideband power amplifier (PA) for a high precision frequency modulated continuous wave (FMCW) radar in 65-nm CMOS technology. To achieve a broadband operation with an improved output power for a high range resolution and high distance coverage of FMCW radar sensors, a balanced architecture is employed with the Lange coupler which naturally combines the output powers from two 4-way push-pull PAs. By utilizing a transformer-based push-pull structure with a cross-coupled capacitive neutralization technique, the gate-drain capacitance of the 4-way PA is compensated for the stabilization with an improved power gain. Interstage matching was performed with transformers for a reduced loss from the matching network and minimal area occupation. The implemented balanced 8-way PA achieved a saturated output power (Psat) of 16.5 dBm, a 1-dB compressed output power (OP1dB) of 13.3 dBm, a power-added efficiency (PAE) of 9.9% at 90 GHz and 3-dB power bandwidth was 20.4 GHz (79.2-99.6 GHz).

A 78.8-84 GHz Phase Locked Loop Synthesizer for a W-Band Frequency-Hopping FMCW Radar Transceiver in 65 nm CMOS.

A W-band integer-N phase-locked loop (PLL) for a frequency hopping frequency modulation continuous wave (FMCW) radar is implemented in 65-nm CMOS technology. The cross-coupled voltage-controlled oscillator (VCO) was designed based on a systematic analysis of the VCO combined with its push-pull buffer to achieve high efficiency and high output power. To provide a frequency hopping functionality without any overhead in the implementation, the center frequency of the VCO is steeply controlled by the gate voltage of the buffer, which effectively modifies the susceptance of the VCO load. A stand-alone VCO with the proposed architecture is fabricated, and it achieves an output power of 13.5 dBm, a peak power efficiency of 9.6%, and a tuning range of 3.5%. The phase noise performance of the VCO is -92.6 dBc/Hz at 1-MHz and -106.1 dBc/Hz at 10 MHz offset. Consisting of a third-order loop filter and a divider chain with a total modulus of 48, the locking range of the implemented PLL with the cross-coupled VCO is recorded from 78.84 GHz to 84 GHz, and its phase noise is -85.2 dBc/Hz at 1-MHz offset.

An X-band Bi-Directional Transmit/Receive Module for a Phased Array System in 65-nm CMOS.

We present an X-band bi-directional transmit/receive module (TRM) for a phased array system utilized in radar-based sensor systems. The proposed module, comprising a 6-bit phase shifter, a 6-bit digital step attenuator, and bi-directional gain amplifiers, is fabricated using 65-nm CMOS technology. By constructing passive networks in the phase-shifter and the variable attenuator, the implemented TRM provides amplitude and phase control with 360° phase coverage and 5.625° as the minimum step size while the attenuation range varies from 0 to 31.5 dB with a step size of 0.5 dB. The fabricated T/R module in all of the phase shift states had RMS phase errors of less than 4° and an RMS amplitude error of less than 0.93 dB at 9⁻11 GHz. The output 1dB gain compression point (OP1dB) of the chip was 5.13 dBm at 10 GHz. The circuit occupies 3.92 × 2.44 mm² of the chip area and consumes 170 mW of DC power.

The Smallest Form Factor UWB Antenna with Quintuple Rejection Bands for IoT Applications Utilizing RSRR and RCSRR.

In this paper, we present the smallest form factor microstrip-fed ultra-wideband antenna with quintuple rejection bands for use in wireless sensor networks, mobile handsets, and Internet of things (IoT). Five rejection bands have been achieved at the frequencies of 3.5, 4.5, 5.25, 5.7, and 8.2 GHz, inseminating four rectangular complementary split ring resonators (RCSRRs) on the radiating patch and placing two rectangular split-ring resonators (RSRR) near the feedline-patch junction of the conventional ultra-wideband (UWB) antenna. The design guidelines of the implemented notched bands are provided at the desired frequency bands and analyzed. The measured results demonstrate that the proposed antenna delivers a wide impedance bandwidth from 3 to 11 GHz with a nearly omnidirectional radiation pattern, high rejection in the multiple notched-bands, and good radiation efficiency over the entire frequency band except at the notched frequencies. Simulated and measured response match well specifically at the stop-bands.

A Compact Multiple Notched Ultra-Wide Band Antenna with an Analysis of the CSRR-TO-CSRR Coupling for Portable UWB Applications.

We present a compact ultra-wideband (UWB) antenna integrated with sharp notches with a detailed analysis of the mutual coupling of the multiple notch resonators. By utilizing complementary split ring resonators (CSRR) on the radiating semi-circular patch, we achieve the sharp notch-filtering of various bands within the UWB band without increasing the antenna size. The notched frequency bands include WiMAX, INSAT, and lower and upper WLAN. In order to estimate the frequency shifts of the notch due to the coupling of the nearby CSRRs, an analysis of the coupling among the multiple notch resonators is carried out and we construct the lumped-circuit equivalent model. The time domain analysis of the proposed antenna is performed to show its validity on the UWB application. The measured frequency response of the input port corresponds quite well with the calculations and simulations. The radiation pattern of the implemented quad-notched UWB antenna is nearly omnidirectional in the passband.

Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices.

Because of the "Boltzmann tyranny" (i.e., the nonscalability of thermal voltage), a certain minimum gate voltage in metal-oxide-semiconductor (MOS) devices is required for a 10-fold increase in drain-to-source current. The subthreshold slope (SS) in MOS devices is, at best, 60 mV/decade at 300 K. Negative capacitance in organic/ferroelectric materials is proposed in order to address this physical limitation in MOS technology. Here, we experimentally demonstrate the steep switching behavior of a MOS device-that is, SS ∼ 18 mV/decade (much less than 60 mV/decade) at 300 K-by taking advantage of negative capacitance in a MOS gate stack. This negative capacitance, originating from the dynamics of the stored energy in a phase transition of a ferroelectric material, can achieve the step-up conversion of internal voltage (i.e., internal voltage amplification in a MOS device). With the aid of a series-connected negative capacitor as an assistive device, the surface potential in the MOS device becomes higher than the applied gate voltage, so that a SS of 18 mV/decade at 300 K is reliably observed.

Reliability of the pinch strength with digitalized pinch dynamometer.

OBJECTIVE: To examine the intra-rater, inter-rater, and inter-instrumental reliability of the digitalized pinch muscle strength dynamometer. METHOD: Thirty normal subjects were examined for pinch strength, using both the Preston pinch gauge and the digitalized pinch dynamometer. The participants performed all pinch strength tests in the seated position as recommended by the American Society of Hand Therapists (ASHT). Three successive measurements were taken for each hand. The mean of the three trials was used for data analysis. The pinch strength tests performed used a repeated measure design and measurements were taken by each rater. RESULTS: The relationship between the Preston pinch gauge and the digitalized pinch dynamometer in pinch strength was reliable (the ICC were 0.821 and 0.785 in rater 1 and rater 2 respectively). The relationship between the first session and second session in pinch strength using the digitalized pinch dynamometer was reliable (the ICC were 0.872 and 0.886 in rater A and rater B respectively). The relationship between rater A and rater B in pinch strength using the digitalized pinch dynamometer was reliable (the ICC was 0.754). CONCLUSION: The pinch strength measurement using the digitalized pinch dynamometer is reliable within the rater and between raters. Thus, the Preston pinch gauge and the digitalized dynamometer measure grip strength equivalently, and can be used interchangeably.