Magnetic field filtering of the boundary supercurrent in unconventional metal NiTe2-based Josephson junctions.

Topological materials with boundary (surface/edge/hinge) states have attracted tremendous research interest. Additionally, unconventional (obstructed atomic) materials have recently drawn lots of attention owing to their obstructed boundary states. Experimentally, Josephson junctions (JJs) constructed on materials with boundary states produce the peculiar boundary supercurrent, which was utilized as a powerful diagnostic approach. Here, we report the observations of boundary supercurrent in NiTe2-based JJs. Particularly, applying an in-plane magnetic field along the Josephson current can rapidly suppress the bulk supercurrent and retain the nearly pure boundary supercurrent, namely the magnetic field filtering of supercurrent. Further systematic comparative analysis and theoretical calculations demonstrate the existence of unconventional nature and obstructed hinge states in NiTe2, which could produce hinge supercurrent that accounts for the observation. Our results reveal the probable hinge states in unconventional metal NiTe2, and demonstrate in-plane magnetic field as an efficient method to filter out the bulk contributions and thereby to highlight the hinge states hidden in topological/unconventional materials.

A robust and tunable Luttinger liquid in correlated edge of transition-metal second-order topological insulator Ta2Pd3Te5.

The interplay between topology and interaction always plays an important role in condensed matter physics and induces many exotic quantum phases, while rare transition metal layered material (TMLM) has been proved to possess both. Here we report a TMLM Ta2Pd3Te5 has the two-dimensional second-order topology (also a quadrupole topological insulator) with correlated edge states - Luttinger liquid. It is ascribed to the unconventional nature of the mismatch between charge- and atomic- centers induced by a remarkable double-band inversion. This one-dimensional protected edge state preserves the Luttinger liquid behavior with robustness and universality in scale from micro- to macro- size, leading to a significant anisotropic electrical transport through two-dimensional sides of bulk materials. Moreover, the bulk gap can be modulated by the thickness, resulting in an extensive-range phase diagram for Luttinger liquid. These provide an attractive model to study the interaction and quantum phases in correlated topological systems.

Controlled Synthesis of MoxW1-xTe2 Atomic Layers with Emergent Quantum States.

Recently, new states of matter like superconducting or topological quantum states were found in transition metal dichalcogenides (TMDs) and manifested themselves in a series of exotic physical behaviors. Such phenomena have been demonstrated to exist in a series of transition metal tellurides including MoTe2, WTe2, and alloyed MoxW1-xTe2. However, the behaviors in the alloy system have been rarely addressed due to their difficulty in obtaining atomic layers with controlled composition, albeit the alloy offers a great platform to tune the quantum states. Here, we report a facile CVD method to synthesize the MoxW1-xTe2 with controllable thickness and chemical composition ratios. The atomic structure of a monolayer MoxW1-xTe2 alloy was experimentally confirmed by scanning transmission electron microscopy. Importantly, two different transport behaviors including superconducting and Weyl semimetal states were observed in Mo-rich Mo0.8W0.2Te2 and W-rich Mo0.2W0.8Te2 samples, respectively. Our results show that the electrical properties of MoxW1-xTe2 can be tuned by controlling the chemical composition, demonstrating our controllable CVD growth method is an efficient strategy to manipulate the physical properties of TMDCs. Meanwhile, it provides a perspective on further comprehension and sheds light on the design of devices with topological multicomponent TMDC materials.

Magnitude and Spatial Distribution Control of the Supercurrent in Bi2O2Se-Based Josephson Junction.

Many proposals for exploring topological quantum computation are based on superconducting quantum devices constructed on materials with strong spin-orbit coupling (SOC). For these devices, full control of both the magnitude and the spatial distribution of the supercurrent is highly demanded, but has been elusive up to now. We constructed a proximity-type Josephson junction on nanoplates of Bi2O2Se, a new emerging semiconductor with strong SOC. Through electrical gating, we show that the supercurrent can be fully turned ON and OFF, and its real-space pathways can be configured either through the bulk or along the edges. Our work demonstrates Bi2O2Se as a promising platform for constructing multifunctional hybrid superconducting devices as well as for searching for topological superconductivity.

Phase Transition and Superconductivity Enhancement in Se-Substituted MoTe2 Thin Films.

Consecutively tailoring few-layer transition metal dichalcogenides MX2 from 2H to Td phase may realize the long-sought topological superconductivity in a single material system by incorporating superconductivity and the quantum spin Hall effect together. Here, this study demonstrates that a consecutive structural phase transition from Td to 1T' to 2H polytype can be realized by increasing the Se concentration in Se-substituted MoTe2 thin films. More importantly, the Se-substitution is found to dramatically enhance the superconductivity of the MoTe2 thin film, which is interpreted as the introduction of two-band superconductivity. The chemical-constituent-induced phase transition offers a new strategy to study the s+- superconductivity and the possible topological superconductivity, as well as to develop phase-sensitive devices based on MX2 materials.

Transport evidence of asymmetric spin-orbit coupling in few-layer superconducting 1Td-MoTe2.

Two-dimensional transition metal dichalcogenides MX2 (M = W, Mo, Nb, and X = Te, Se, S) with strong spin-orbit coupling possess plenty of novel physics including superconductivity. Due to the Ising spin-orbit coupling, monolayer NbSe2 and gated MoS2 of 2H structure can realize the Ising superconductivity, which manifests itself with in-plane upper critical field far exceeding Pauli paramagnetic limit. Surprisingly, we find that a few-layer 1Td structure MoTe2 also exhibits an in-plane upper critical field which goes beyond the Pauli paramagnetic limit. Importantly, the in-plane upper critical field shows an emergent two-fold symmetry which is different from the isotropic in-plane upper critical field in 2H transition metal dichalcogenides. We show that this is a result of an asymmetric spin-orbit coupling in 1Td transition metal dichalcogenides. Our work provides transport evidence of a new type of asymmetric spin-orbit coupling in transition metal dichalcogenides which may give rise to novel superconducting and spin transport properties.

Band Structure Perfection and Superconductivity in Type-II Dirac Semimetal Ir1-x Ptx Te2.

The discovery of a new type-II Dirac semimetal in Ir1-x Ptx Te2 with optimized band structure is described. Pt dopants protect the crystal structure holding the Dirac cones and tune the Fermi level close to the Dirac point. The type-II Dirac dispersion in Ir1-x Ptx Te2 is confirmed by angle-resolved photoemission spectroscopy and first-principles calculations. Superconductivity is also observed and persists when the Fermi level aligns with the Dirac points. Ir1-x Ptx Te2 is an ideal platform for further studies on the exotic properties and potential applications of type-II DSMs, and opens up a new route for the investigation of the possible topological superconductivity and Majorana physics.

h/e Superconducting Quantum Interference through Trivial Edge States in InAs.

Josephson junctions defined in strong spin orbit semiconductors are highly interesting for the search for topological systems. However, next to topological edge states that emerge in a sufficient magnetic field, trivial edge states can also occur. We study the trivial edge states with superconducting quantum interference measurements on nontopological InAs Josephson junctions. We observe a SQUID pattern, an indication of superconducting edge transport. Also, a remarkable h/e SQUID signal is observed that, as we find, stems from crossed Andreev states.

Giant Spin-Orbit Splitting in Inverted InAs/GaSb Double Quantum Wells.

Transport measurements in inverted InAs/GaSb quantum wells reveal a giant spin-orbit splitting of the energy bands close to the hybridization gap. The splitting results from the interplay of electron-hole mixing and spin-orbit coupling, and can exceed the hybridization gap. We experimentally investigate the band splitting as a function of top gate voltage for both electronlike and holelike states. Unlike conventional, noninverted two-dimensional electron gases, the Fermi energy in InAs/GaSb can cross a single spin-resolved band, resulting in full spin-orbit polarization. In the fully polarized regime we observe exotic transport phenomena such as quantum Hall plateaus evolving in e^{2}/h steps and a nontrivial Berry phase.

Spectroscopic evidence for bulk-band inversion and three-dimensional massive Dirac fermions in ZrTe5.

Three-dimensional topological insulators (3D TIs) represent states of quantum matters in which surface states are protected by time-reversal symmetry and an inversion occurs between bulk conduction and valence bands. However, the bulk-band inversion, which is intimately tied to the topologically nontrivial nature of 3D Tis, has rarely been investigated by experiments. Besides, 3D massive Dirac fermions with nearly linear band dispersions were seldom observed in TIs. Recently, a van der Waals crystal, ZrTe5, was theoretically predicted to be a TI. Here, we report an infrared transmission study of a high-mobility [∼33,000 cm2/(V ⋅ s)] multilayer ZrTe5 flake at magnetic fields (B) up to 35 T. Our observation of a linear relationship between the zero-magnetic-field optical absorption and the photon energy, a bandgap of ∼10 meV and a [Formula: see text] dependence of the Landau level (LL) transition energies at low magnetic fields demonstrates 3D massive Dirac fermions with nearly linear band dispersions in this system. More importantly, the reemergence of the intra-LL transitions at magnetic fields higher than 17 T reveals the energy cross between the two zeroth LLs, which reflects the inversion between the bulk conduction and valence bands. Our results not only provide spectroscopic evidence for the TI state in ZrTe5 but also open up a new avenue for fundamental studies of Dirac fermions in van der Waals materials.

Quantized Conductance and Large g-Factor Anisotropy in InSb Quantum Point Contacts.

Because of a strong spin-orbit interaction and a large Landé g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an alternative approach to nanowires. In this work, we report a pronounced conductance quantization of quantum point contact devices in InSb/InAlSb quantum wells. Using a rotating magnetic field, we observe a large in-plane (|g1| = 26) and out-of-plane (|g1| = 52) g-factor anisotropy. Additionally, we investigate crossings of subbands with opposite spins and extract the electron effective mass from magnetic depopulation of one-dimensional subbands.

Decoupling Edge Versus Bulk Conductance in the Trivial Regime of an InAs/GaSb Double Quantum Well Using Corbino Ring Geometry.

A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2 kΩ/µm. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n type.

A Noninvasive Method for Nanoscale Electrostatic Gating of Pristine Materials.

Electrostatic gating is essential for defining and control of semiconducting devices. However, nanofabrication processes required for depositing gates inevitably degrade the pristine quality of the material of interest. Examples of materials that suffer from such degradation include ultrahigh mobility GaAs/AlGaAs two-dimensional electron gases (2DEGs), graphene, topological insulators, and nanowires. To preserve the pristine material properties, we have developed a flip-chip setup where gates are separated from the material by a vacuum, which allows nanoscale electrostatic gating of the material without exposing it to invasive nanoprocessing. An additional benefit is the vacuum between gates and material, which, unlike gate dielectrics, is free from charge traps. We demonstrate the operation and feasibility of the flip-chip setup by achieving quantum interference at integer quantum Hall states in a Fabry-Pérot interferometer based on a GaAs/AlGaAs 2DEG. Our results pave the way for the study of exotic phenomena including fragile fractional quantum Hall states by preserving the high quality of the material.

Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells.

Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band alignment via electric and magnetic fields. However, the rich trivial-topological phase diagram has yet to be experimentally explored. We present an in situ and continuous tuning between the trivial and topological insulating phases in InAs/GaSb DQWs through electrical dual gating. Furthermore, we show that an in-plane magnetic field shifts the electron and hole bands relatively to each other in momentum space, functioning as a powerful tool to discriminate between the topologically distinct states.

Edge-mode superconductivity in a two-dimensional topological insulator.

Topological superconductivity is an exotic state of matter that supports Majorana zero-modes, which have been predicted to occur in the surface states of three-dimensional systems, in the edge states of two-dimensional systems, and in one-dimensional wires. Localized Majorana zero-modes obey non-Abelian exchange statistics, making them interesting building blocks for topological quantum computing. Here, we report superconductivity induced in the edge modes of semiconducting InAs/GaSb quantum wells, a two-dimensional topological insulator. Using superconducting quantum interference we demonstrate gate-tuning between edge-dominated and bulk-dominated regimes of superconducting transport. The edge-dominated regime arises only under conditions of high-bulk resistivity, which we associate with the two-dimensional topological phase. These experiments establish InAs/GaSb as a promising platform for the confinement of Majoranas into localized states, enabling future investigations of non-Abelian statistics.

Strong superconducting proximity effect in pb-bi(2)te(3) hybrid structures.

To study the interface between a conventional superconductor and a topological insulator, we fabricated Pb-Bi(2)Te(3)-Pb lateral and sandwiched junctions, and performed electron transport measurements down to low temperatures. The results show that there is a strong superconducting proximity effect between Bi(2)Te(3) and Pb, as that a supercurrent can be established along the thickness direction of the Bi(2)Te(3) flakes (100~300 nm thick) at a temperature very close to the superconducting T(c) of Pb. Moreover, a Josephson current can be established over several microns in the lateral direction between two Pb electrodes on the Bi(2)Te(3 )surface. We have further demonstrated that superconducting quantum interference devices can be constructed based on the proximity-effect-induced superconductivity. The critical current of the devices exhibits s-wave-like interference and Fraunhofer diffraction patterns. With improved designs, Josephson devices of this type would provide a test-bed for exploring novel phenomena such as Majorana fermions in the future.

Aharonov-casher effect in Bi2Se3 square-ring interferometers.

Electrical control of spin dynamics in Bi(2)Se(3) was investigated in ring-type interferometers. Aharonov-Bohm and Altshuler-Aronov-Spivak resistance oscillations against a magnetic field, and Aharonov-Casher resistance oscillations against the gate voltage were observed in the presence of a Berry phase of π. A very large tunability of spin precession angle by the gate voltage has been obtained, indicating that Bi(2)Se(3)-related materials with strong spin-orbit coupling are promising candidates for constructing novel spintronic devices.