Emission enhancement of erbium in a reverse nanofocusing waveguide.

Since Purcell's seminal report 75 years ago, electromagnetic resonators have been used to control light-matter interactions to make brighter radiation sources and unleash unprecedented control over quantum states of light and matter. Indeed, optical resonators such as microcavities and plasmonic antennas offer excellent control but only over a limited spectral range. Strategies to mutually tune and match emission and resonator frequency are often required, which is intricate and precludes the possibility of enhancing multiple transitions simultaneously. In this letter, we report a strong radiative emission rate enhancement of Er3+-ions across the telecommunications C-band in a single plasmonic waveguide based on the Purcell effect. Our gap waveguide uses a reverse nanofocusing approach to efficiently enhance, extract and guide emission from the nanoscale to a photonic waveguide while keeping plasmonic losses at a minimum. Remarkably, the large and broadband Purcell enhancement allows us to resolve Stark-split electric dipole transitions, which are typically only observed under cryogenic conditions. Simultaneous radiative emission enhancement of multiple quantum states is of great interest for photonic quantum networks and on-chip data communications.

Polarization Dependent Excitation and High Harmonic Generation from Intense Mid-IR Laser Pulses in ZnO.

The generation of high order harmonics from femtosecond mid-IR laser pulses in ZnO has shown great potential to reveal new insight into the ultrafast electron dynamics on a few femtosecond timescale. In this work we report on the experimental investigation of photoluminescence and high-order harmonic generation (HHG) in a ZnO single crystal and polycrystalline thin film irradiated with intense femtosecond mid-IR laser pulses. The ellipticity dependence of the HHG process is experimentally studied up to the 17th harmonic order for various driving laser wavelengths in the spectral range 3-4 µm. Interband Zener tunneling is found to exhibit a significant excitation efficiency drop for circularly polarized strong-field pump pulses. For higher harmonics with energies larger than the bandgap, the measured ellipticity dependence can be quantitatively described by numerical simulations based on the density matrix equations. The ellipticity dependence of the below and above ZnO band gap harmonics as a function of the laser wavelength provides an efficient method for distinguishing the dominant HHG mechanism for different harmonic orders.

Conversionless efficient and broadband laser light diffusers for high brightness illumination applications.

Laser diodes are efficient light sources. However, state-of-the-art laser diode-based lighting systems rely on light-converting inorganic phosphor materials, which strongly limit the efficiency and lifetime, as well as achievable light output due to energy losses, saturation, thermal degradation, and low irradiance levels. Here, we demonstrate a macroscopically expanded, three-dimensional diffuser composed of interconnected hollow hexagonal boron nitride microtubes with nanoscopic wall-thickness, acting as an artificial solid fog, capable of withstanding ~10 times the irradiance level of remote phosphors. In contrast to phosphors, no light conversion is required as the diffuser relies solely on strong broadband (full visible range) lossless multiple light scattering events, enabled by a highly porous (>99.99%) non-absorbing nanoarchitecture, resulting in efficiencies of ~98%. This can unleash the potential of lasers for high-brightness lighting applications, such as automotive headlights, projection technology or lighting for large spaces.

Strong Light-Field Driven Nanolasers.

Einstein established the quantum theory of radiation and paved the way for modern laser physics including single-photon absorption by charge carriers and finally pumping an active gain medium into population inversion. This can be easily understood in the particle picture of light. Using intense, ultrashort pulse lasers, multiphoton pumping of an active medium has been realized. In this nonlinear interaction regime, excitation and population inversion depend not only on the photon energy but also on the intensity of the incident pumping light, which can be still described solely by the particle picture of light. We demonstrate here that lowering significantly the pump photon energy further still enables population inversion and lasing in semiconductor nanowires. The extremely high electric field of the pump bends the bands and enables tunneling of electrons from the valence to the conduction band. In this regime, the light acts by the classical Coulomb force and population inversion is entirely due to the wave nature of electrons, thus the excitation becomes independent of the frequency but solely depends on the incident intensity of the pumping light.

Improving gas sensing by CdTe decoration of individual Aerographite microtubes.

Novel gas sensors have been realized by decorating clusters of tubular Aerographite with CdTe using magnetron sputtering techniques. Subsequently, individual microtubes were separated and electrically contacted on a SiO2/Si substrate with pre-patterned electrodes. Cathodoluminescence, electron microscopy and electrical characterization prove the successful formation of a polycrystalline CdTe thin film on Aerographite enabling an excellent gas response to ammonia. Furthermore, the dynamical response to ammonia exposure has been investigated, highlighting the quick response and recovery times of the sensor, which is highly beneficial for extremely short on/off cycles. Therefore, this gas sensor reveals a large potential for cheap, highly selective, reliable and low-power gas sensors, which are especially important for hazardous gases such as ammonia.

Electroluminescence of intrashell transitions in Eu doped single ZnO nanowires.

Tunable nanoscale light emitters are essential to accomplish future multifunctional optoelectronic nano-devices. Here, we present an approach for achieving red electroluminescence from single ZnO nanowires (NWs) implanted with europium ions. The electroluminescence is emitted mainly from the end facets of ZnO NWs at room temperature under the application of an AC voltage. The corresponding electroluminescence spectrum is attributed to the radiative intrashell transitions of the Eu ions, while contributions from near band edge or deep level emission of the ZnO remain absent. The total intensity of the electroluminescence is linearly proportional to the length of the NWs, whereas there is no clear correlation with other morphology factors of the NW based device such as the diameter. Furthermore, the underlying excitation mechanism of the electroluminescence is proposed as direct-impact excitation of Eu ions by hot electrons in the ZnO NWs.

Dynamical Tuning of Nanowire Lasing Spectra.

Realizing visionary concepts of integrated photonic circuits, nanospectroscopy, and nanosensing will tremendously benefit from dynamically tunable coherent light sources with lateral dimensions on the subwavelength scale. Therefore, we demonstrate an individual nanowire laser based device which can be gradually tuned by reversible length changes of the nanowire such that uniaxial tensile stress is applied to the respective semiconductor gain material. By straining the device, the spontaneous excitonic emission of the nanowire shifts to lower energies caused by the bandgap reduction of the semiconductor. Moreover, the optical gain spectrum of the nanolaser can be precisely strain-tuned in the high excitation regime. The tuning of the emission does not affect the laser threshold of the device, which is very beneficial for practical applications. The applied length change furthermore adjusts the laser resonances inducing a redshift of the longitudinal modes. Thus, this concept of gradually and dynamically tunable nanolasers enables controlling and modulating the coherent emission on the nanoscale without changing macroscopic ambient conditions. This concept holds therefore huge impact on nanophotonic switches and photonic circuit technology.

Carrier density driven lasing dynamics in ZnO nanowires.

We report on the temporal lasing dynamics of high quality ZnO nanowires using the time-resolved micro-photoluminescence technique. The temperature dependence of the lasing characteristics and of the corresponding decay constants demonstrate the formation of an electron-hole plasma to be the underlying gain mechanism in the considered temperature range from 10 K to 300 K. We found that the temperature-dependent emission onset-time ([Formula: see text]) strongly depends on the excitation power and becomes smallest in the lasing regime, with values below 5 ps. Furthermore, the observed red shift of the dominating lasing modes in time is qualitatively discussed in terms of the carrier density induced change of the refractive index dispersion after the excitation laser pulse. This theory is supported by extending an existing model for the calculation of the carrier density dependent complex refractive index for different temperatures. This model coincides with the experimental observations and reliably describes the evolution of the refractive index after the excitation laser pulse.

Mode Switching and Filtering in Nanowire Lasers.

Coherent light sources confining the light below the vacuum wavelength barrier will drive future concepts of nanosensing, nanospectroscopy, and photonic circuits. Here, we directly image the angular emission of such a light source based on single semiconductor nanowire lasers. It is confirmed that the lasing switches from the fundamental mode in a thin ZnO nanowire to an admixture of several transverse modes in thicker nanowires approximately at the multimode cutoff. The mode competition with higher order modes substantially slows down the laser dynamics. We show that efficient photonic mode filtering in tapered nanowires selects the desired fundamental mode for lasing with improved performance including power, efficiency, and directionality important for an optimal coupling between adjacent nanophotonic waveguides.

Ultrafast Dynamics of Lasing Semiconductor Nanowires.

Semiconductor nanowire lasers operate at ultrafast timescales; here we report their temporal dynamics, including laser onset time and pulse width, using a double-pump approach. Wide bandgap gallium nitride (GaN), zinc oxide (ZnO), and cadmium sulfide (CdS) nanowires reveal laser onset times of a few picoseconds, driven by carrier thermalization within the optically excited semiconductor. Strong carrier-phonon coupling in ZnO leads to the fastest laser onset time of ∼1 ps in comparison to CdS and GaN exhibiting values of ∼2.5 and ∼3.5 ps, respectively. These values are constant between nanowires of different sizes implying independence from any optical influences. However, we demonstrate that the lasing onset times vary with excitation wavelength relative to the semiconductor band gap. Meanwhile, the laser pulse widths are dependent on the optical system. While the fastest ultrashort pulses are attained using the thinnest possible nanowires, a sudden change in pulse width from ∼5 to ∼15 ps occurs at a critical nanowire diameter. We attribute this to the transition from single to multimode waveguiding, as it is accompanied by a change in laser polarization.

Nature of AX centers in antimony-doped cadmium telluride nanobelts.

Single crystalline p-type CdTe:Sb nanobelts were fabricated using an Au-catalyzed chemical vapor deposition method. Low carrier concentration and low mobility even at high Sb incorporation manifest compensation in the system. From cross examination of temperature-dependent charge transport and photoluminescence measurements, two major acceptor levels induced by Sb doping are determined: a shallow level attributed to substitutional Sb dopants without lattice relaxation and an associated deeper level resulted from large lattice relaxation-AX centers. Persistent photoconductivity and hysteresis photoconductance under the thermal cycle elucidate the nature of AX centers. This comprehensive investigation of the impurity levels in the material system is essential for the design and development of nanoelectronic devices based on the CdTe nanostructures.

Intense intrashell luminescence of Eu-doped single ZnO nanowires at room temperature by implantation created Eu-Oi complexes.

Successful doping and excellent optical activation of Eu(3+) ions in ZnO nanowires were achieved by ion implantation. We identified and assigned the origin of the intra-4f luminescence of Eu(3+) ions in ZnO by first-principles calculations to Eu-Oi complexes, which are formed during the nonequilibrium ion implantation process and subsequent annealing at 700 °C in air. Our targeted defect engineering resulted in intense intrashell luminescence of single ZnO:Eu nanowires dominating the photoluminescence spectrum even at room temperature. The high intensity enabled us to study the luminescence of single ZnO nanowires in detail, their behavior as a function of excitation power, waveguiding properties, and the decay time of the transition.

Single step integration of ZnO nano- and microneedles in Si trenches by novel flame transport approach: whispering gallery modes and photocatalytic properties.

Direct growth of quasi-one-dimensional nano- and microstructures in desired places of complex shaped substrates using simple growth methods is highly demanded aspect for various applications. In this work, we have demonstrated direct integration of ZnO nano- and microneedles into Si trenches by a novel flame transport synthesis approach in a single fabrication step. Growth of partially and fully covered or filled trenches in Si substrate with ZnO nano- and microneedles has been investigated and is discussed here. Detailed microstructural studies revealed the evolution of the ZnO nano- and microneedles as well as their firm adhesion to the wall in the Si trenches. Micro-photoluminescence measurements at different locations along the length of needles confirmed the good crystalline quality and also the presence of whispering gallery mode resonances on the top of needles due to their hexagonal shape. Faceted ZnO nano- and microstructures are also very important candidates with regard to photocatalytic activity. First, photocatalytic measurements from the grown ZnO nano- and microneedles have shown strong degradation of methylene blue, which demonstrate that these structures can be of significant interest for photocatalysis and self-cleaning chromatography columns.

Amphoteric nature of Sn in CdS nanowires.

High-quality CdS nanowires with uniform Sn doping were synthesized using a Sn-catalyzed chemical vapor deposition method. X-ray diffraction and transmission electron microscopy demonstrate the single crystalline wurtzite structure of the CdS/Sn nanowires. Both donor and acceptor levels, which originate from the amphoteric nature of Sn in II-VI semiconductors, are identified using low-temperature microphotoluminescence. This self-compensation effect was cross examined by gate modulation and temperature-dependent electrical transport measurement. They show an overall n-type behavior with relatively low carrier concentration and low carrier mobilities. Moreover, two different donor levels due to intrinsic and extrinsic doping could be distinguished. They agree well with both the electrical and optical data.

Continuous wave nanowire lasing.

Tin-doped cadmium sulfide nanowires reveal donor-acceptor pair transitions at low-temperature photoluminescence and furthermore exhibit ideal resonator morphology appropriate for lasing at continuous wave pumping. The continuous wave lasing mode is proven by the evolution of the emitted power and spectrum with increasing pump intensity. The high temperature stability up to 120 K at given pumping power is determined by the decreasing optical gain necessary for lasing in an electron-hole plasma.

Low threshold room-temperature lasing of CdS nanowires.

The synthesis of CdS nanostructures (bands, wires, irregular structures) was investigated by systematic variation of temperature and gas pressure, to deduce a comprehensive growth phase diagram. The high quality nanowires were further investigated and show stoichiometric composition of CdS as well as a single-crystalline lattice without any evidence of extended defects. The luminescence of individual nanowires at low excitation shows a strong near band edge emission at 2.41 eV indicating a low point defect concentration. Sharp peaks evolve at higher laser power and finally dominate the luminescence spectrum. The power dependence of the spectrum clearly shows all the characteristics of amplified stimulated emission and lasing action in the nanowire cavity. A low threshold was determined as 10 kW cm(-2) for lasing at room temperature with a slope efficiency of 5-10% and a Q factor of up to 1200. The length and diameter relations necessary for lasing of individual nanowires was investigated.