Five Low-Noise Stable Oscillators Referenced to the Same Multimode AlN/Si MEMS Resonator.

We report on the first experimental demonstration of five self-sustaining feedback oscillators referenced to a single multimode resonator, using piezoelectric aluminum nitride on silicon (AlN/Si) microelectromechanical systems (MEMS) technology. Integrated piezoelectric transduction enables efficient readout of five resonance modes of the same AlN/Si MEMS resonator, at 10, 30, 65, 95, and 233 MHz with quality ( Q ) factors of 18 600, 4350, 4230, 2630, and 2138, respectively, at room temperature. Five stable self-sustaining oscillators are built, each referenced to one of these high- Q modes, and their mode-dependent phase noise and frequency stability (Allan deviation) are measured and analyzed. The 10, 30, 65, 95, and 233 MHz oscillators exhibit low phase noise of -116, -100, -105, -106, and -92 dBc/Hz at 1 kHz offset frequency, respectively. The 65 MHz oscillator yields the Allan deviation of 4×10-9 and 2×10-7 at 1 and 1000 s averaging time, respectively. The 10 MHz oscillator's low phase noise holds strong promise for clock and timing applications. The five oscillators' overall promising performance suggests suitability for multimode resonant sensing and real-time frequency tracking. This work also elucidates mode dependency in oscillator noise and stability, one of the key attributes of mode-engineerable resonators.

Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring.

Semiconductor nanowires are widely considered as the building blocks that revolutionized many areas of nanosciences and nanotechnologies. The unique features in nanowires, including high electron transport, excellent mechanical robustness, large surface area, and capability to engineer their intrinsic properties, enable new classes of nanoelectromechanical systems (NEMS). Wide bandgap (WBG) semiconductors in the form of nanowires are a hot spot of research owing to the tremendous possibilities in NEMS, particularly for environmental monitoring and energy harvesting. This article presents a comprehensive overview of the recent progress on the growth, properties and applications of silicon carbide (SiC), group III-nitrides, and diamond nanowires as the materials of choice for NEMS. It begins with a snapshot on material developments and fabrication technologies, covering both bottom-up and top-down approaches. A discussion on the mechanical, electrical, optical, and thermal properties is provided detailing the fundamental physics of WBG nanowires along with their potential for NEMS. A series of sensing and electronic devices particularly for environmental monitoring is reviewed, which further extend the capability in industrial applications. The article concludes with the merits and shortcomings of environmental monitoring applications based on these classes of nanowires, providing a roadmap for future development in this fast-emerging research field.

Zero-static-power phase-change optical modulator.

This Letter presents an innovative design of an electro-optical modulator using germanium telluride (GeTe) phase change material with an integrated nano-heater. The refractive index and the electrical conductivity of GeTe significantly change as the GeTe goes though the crystallographic phase change. Amorphization and crystallization of GeTe is achieved using the Joule heating method by passing current through an array of metal gratings, where GeTe fills the slits between the metal lines. These metal slits also increase the contrast between the amorphous (on) and crystalline (off) phases of the modulator by having extraordinary transmission and reflection response based on interactions of surface plasmon polaritons (SPPs) with the incoming light. The modulator is designed for 1550 nm wavelength, where GeTe is transparent in the amorphous phase and provides high optical on/off contrast. The metal-insulator-metal (MIM) is designed in such a way to only support SPP excitation when GeTe is crystalline and slit resonance when it is amorphous to increase the modulation index. The modulator is stable in both phases with higher than 12 dB change in transmission with zero static power consumption at room temperature.

GaN Micromechanical Resonators with Meshed Metal Bottom Electrode.

This work describes a novel architecture to realize high-performance gallium nitride (GaN) bulk acoustic wave (BAW) resonators. The method is based on the growth of a thick GaN layer on a metal electrode grid. The fabrication process starts with the growth of a thin GaN buffer layer on a Si (111) substrate. The GaN buffer layer is patterned and trenches are made and refilled with sputtered tungsten (W)/silicon dioxide (SiO2) forming passivated metal electrode grids. GaN is then regrown, nucleating from the exposed GaN seed layer and coalescing to form a thick GaN device layer. A metal electrode can be deposited and patterned on top of the GaN layer. This method enables vertical piezoelectric actuation of the GaN layer using its largest piezoelectric coefficient (d33) for thickness-mode resonance. Having a bottom electrode also results in a higher coupling coefficient, useful for the implementation of acoustic filters. Growth of GaN on Si enables releasing the device from the frontside using isotropic xenon difluoride (XeF2) etch and therefore eliminating the need for backside lithography and etching.

Phonon-electron interactions in piezoelectric semiconductor bulk acoustic wave resonators.

This work presents the first comprehensive investigation of phonon-electron interactions in bulk acoustic standing wave (BAW) resonators made from piezoelectric semiconductor (PS) materials. We show that these interactions constitute a significant energy loss mechanism and can set practical loss limits lower than anharmonic phonon scattering limits or thermoelastic damping limits. Secondly, we theoretically and experimentally demonstrate that phonon-electron interactions, under appropriate conditions, can result in a significant acoustic gain manifested as an improved quality factor (Q). Measurements on GaN resonators are consistent with the presented interaction model and demonstrate up to 35% dynamic improvement in Q. The strong dependencies of electron-mediated acoustic loss/gain on resonance frequency and material properties are investigated. Piezoelectric semiconductors are an extremely important class of electromechanical materials, and this work provides crucial insights for material choice, material properties, and device design to achieve low-loss PS-BAW resonators along with the unprecedented ability to dynamically tune resonator Q.

Acoustically coupled thickness-mode AIN-on-Si band-pass filters--part I: principle and devices.

In this, the first of two papers, we present the working principle and the implementation of laterally acoustically coupled thickness-mode thin-film piezoelectric-on-substrate (TPoS) filters. This type of filter offers low insertion loss and small bandwidth in a broad frequency range--from a few hundred megahertz up to a few gigahertz--and occupy a small chip area. In this paper, we discuss several design concerns, including the choice of materials for TPoS filters. We demonstrate a design for an air-suspended AlN-on-Si filter, which offers a low insertion loss of 2.4 dB at 2.877 GHz. The bandwidth of this filter is 12 MHz with a return loss of better than 30 dB. In Part II of this paper, we present a comprehensive analysis of the effect of physical layout parameters on the frequency response of TPoS filters.

Acoustically coupled thickness-mode AIN-on-Si band-pass filters--part II: simulation and analysis.

In this, the second of two papers, we present numerical simulations and comprehensive analysis of acoustically coupled thickness-mode AlN-on-Si filters. We simulate the scattering parameters of such acoustically coupled filters using commercially available finite element analysis software and compare the simulation results with a set of measurements. The simulations are in good agreement with the measurements, allowing the optimization of filter characteristics. We analyze the filter response under varying geometric parameters and demonstrate that variations in the top electrode geometry allow the design of low-loss filters (insertion loss <5 dB) with percentage bandwidth up to about 1% and ripple less than 1 dB.