Novel Tunnel Magnetoresistive Sensor Functionalities via Oblique-Incidence Deposition.

Controlling the magnetic properties of ultrathin films remains one of the main challenges to the further development of tunnel magnetoresistive (TMR) device applications. The magnetic response in such devices is mainly governed by extending the primary TMR trilayer with the use of suitable contact materials. The transfer of magnetic anisotropy to ferromagnetic electrodes consisting of CoFeB layers results in a field-dependent TMR response, which is determined by the magnetic properties of the CoFeB as well as the contact materials. We flexibly apply oblique-incidence deposition (OID) to introduce arbitrary intrinsic in-plane anisotropy profiles into the magnetic layers. The OID-induced anisotropy shapes the magnetic response and eliminates the requirement of additional magnetic contact materials. Functional control is achieved via an adjustable shape anisotropy that is selectively tailored for the ultrathin CoFeB layers. This approach circumvents previous limitations on TMR devices and allows for the design of new sensing functionalities, which can be precisely customized to a specific application, even in the high field regime. The resulting sensors maintain the typical TMR signal strength as well as a superb thermal stability of the tunnel junction, revealing a striking advantage in functional TMR design using anisotropic interfacial roughness.

Anisotropic circular photogalvanic effect in colloidal tin sulfide nanosheets.

Tin sulfide promises very interesting properties such as a high optical absorption coefficient and a small band gap, while being less toxic compared to other metal chalcogenides. However, the limitations in growing atomically thin structures of tin sulfide hinder the experimental exploration of these properties. Due to the flexibility of the colloidal synthesis, it is possible to synthesize very thin and at the same time large nanosheets. Electrical transport measurements show that these nanosheets can function as field-effect transistors with an on/off ratio of more than 105 at low temperatures and p-type behavior. The temperature dependency of the charge transport reveals that defects in the crystal are responsible for the formation of holes as majority carriers. During illumination with circularly polarized light, these crystals generate a helicity dependent photocurrent at zero-volt bias, since their symmetry is broken by asymmetric interfaces (substrate and vacuum). Further, the observed circular photogalvanic effect shows a pronounced in-plane anisotropy, with a higher photocurrent along the armchair direction, originating from the higher absorption coefficient in this direction. Our new insights show the potential of tin sulfide for new functionalities in electronics and optoelectronics, for instance as polarization sensors.

In-Plane Anisotropic Faceting of Ultralarge and Thin Single-Crystalline Colloidal SnS Nanosheets.

The colloidal synthesis of large, thin two-dimensional (2D) nanosheets is fascinating but challenging, since the growth along the lateral and vertical dimensions needs to be controlled independently. In-plane anisotropy in 2D nanosheets is attracting more attention as well. We present a new synthesis for large colloidal single-crystalline SnS nanosheets with the thicknesses down to 7 nm and lateral sizes up to 8 µm. The synthesis uses trioctylphosphine-S (TOP-S) as sulfur source and oleic acid (with or without trioctylphosphine, TOP) as ligands. Upon adjusting the capping ligand amount, the growth direction can be switched between anisotropic directions (armchair and zigzag) and isotropic directions ("ladder" directions), leading to an edge-morphology anisotropy. This is the first report on solution-phase synthesis of large thin tin(II) sulfide (SnS) nanosheets (NSs) with tunable edge faceting. Furthermore, electronic transport measurements show strong dependency on the crystallographic directions confirming structural anisotropy.

Towards colloidal spintronics through Rashba spin-orbit interaction in lead sulphide nanosheets.

Employing the spin degree of freedom of charge carriers offers the possibility to extend the functionality of conventional electronic devices, while colloidal chemistry can be used to synthesize inexpensive and tunable nanomaterials. Here, in order to benefit from both concepts, we investigate Rashba spin-orbit interaction in colloidal lead sulphide nanosheets by electrical measurements on the circular photo-galvanic effect. Lead sulphide nanosheets possess rock salt crystal structure, which is centrosymmetric. The symmetry can be broken by quantum confinement, asymmetric vertical interfaces and a gate electric field leading to Rashba-type band splitting in momentum space at the M points, which results in an unconventional selection mechanism for the excitation of the carriers. The effect, which is supported by simulations of the band structure using density functional theory, can be tuned by the gate electric field and by the thickness of the sheets. Spin-related electrical transport phenomena in colloidal materials open a promising pathway towards future inexpensive spintronic devices.