Phase comparison and equation of state for Ta2O5.

Tantalum pentoxide (Ta2O5) is among the most technologically useful heavy transition metal oxides. Unfortunately, its crystal structure is the subject of long-standing and unresolved disagreement. Among other consequences, this uncertainty has made it impossible to formulate a robust high pressure equation of state for Ta2O5. Here, we report the results of high pressure x-ray diffraction experiments indexed against a comprehensive list of proposed Ta2O5phases. Five of the proposed phases produce good matches to experimental observations, and the compressibility parameters for these phases are all consistent within uncertainty. This means that regardless of the particular phase chosen, the Ta2O5equation of state can be described with bulk modulusK0=138±3.68 GPa and pressure derivativeK0'=1.82±0.45. Combining these experimental results with new density-functional theory calculations allows us to identify theλphase as the best structural model of Ta2O5at ambient conditions.

Effect of ionic disorder on the principal shock Hugoniot.

The effect of ionic disorder on the principal Hugoniot is investigated using multiple scattering theory to very high pressure (Gbar). Calculations using molecular dynamics to simulate ionic disorder are compared to those with a fixed crystal lattice, for both carbon and aluminum. For the range of conditions considered here we find that ionic disorder has a relatively minor influence. It is most important at the onset of shell ionization and we find that, at higher pressures, the subtle effect of the ionic environment is overwhelmed by the larger number of ionized electrons with higher thermal energies.

Highly Efficient Uniaxial In-Plane Stretching of a 2D Material via Ion Insertion.

On-chip dynamic strain engineering requires efficient micro-actuators that can generate large in-plane strains. Inorganic electrochemical actuators are unique in that they are driven by low voltages (≈1 V) and produce considerable strains (≈1%). However, actuation speed and efficiency are limited by mass transport of ions. Minimizing the number of ions required to actuate is thus key to enabling useful "straintronic" devices. Here, it is shown that the electrochemical intercalation of exceptionally few lithium ions into WTe2 causes large anisotropic in-plane strain: 5% in one in-plane direction and 0.1% in the other. This efficient stretching of the 2D WTe2 layers contrasts to intercalation-induced strains in related materials which are predominantly in the out-of-plane direction. The unusual actuation of Lix WTe2 is linked to the formation of a newly discovered crystallographic phase, referred to as Td', with an exotic atomic arrangement. On-chip low-voltage (<0.2 V) control is demonstrated over the transition to the novel phase and its composition. Within the Td'-Li0.5- δ WTe2 phase, a uniaxial in-plane strain of 1.4% is achieved with a change of δ of only 0.075. This makes the in-plane chemical expansion coefficient of Td'-Li0.5-δ WTe2 far greater than of any other single-phase material, enabling fast and efficient planar electrochemical actuation.

Spectrum of Exfoliable 1D van der Waals Molecular Wires and Their Electronic Properties.

Two-dimensional (2D) materials derived from van der Waals (vdW)-bonded layered crystals have been the subject of considerable research focus, but their one-dimensional (1D) analogues have received less attention. These bulk crystals consist of covalently bonded multiatom atomic chains with weak van der Waals bonds between adjacent chains. Using density-functional-theory-based methods, we find the binding energies of several 1D families of materials to be within typical exfoliation ranges possible for 2D materials. In addition, we compute the electronic properties of a variety of insulating, semiconducting, and metallic individual wires and find differences that could enable the identification of and distinction between 1D, 2D, and 3D forms during mechanical exfoliation onto a substrate. We find 1D wires from chemical families of the forms PdBr2, SbSeI, and GePdS3 are likely to be distinguishable from bulk materials via photoluminescence. Like 2D vdW materials, we find some of these 1D vdW materials have the potential to retain their bulk properties down to nearly atomic film thicknesses, including the structural families of HfI3 and PNF2, a useful property for some applications including electronic interconnects. We also study naturally occurring bulk crystalline heterostructures of 1D wires and identify two families that are likely to be exfoliable and identifiable as individual 1D wire subcomponents.

Reversible Electrochemical Phase Change in Monolayer to Bulk-like MoTe2 by Ionic Liquid Gating.

Transition-metal dichalcogenides (TMDs) exist in various crystal structures with semiconducting, semi-metallic, and metallic properties. The dynamic control of these phases is of immediate interest for next-generation electronics such as phase change memories. Of the binary Mo and W-based TMDs, MoTe2 is attractive for electronic applications because it has the lowest energy difference (40 meV) between the semiconducting (2H) and semi-metallic (1T') phases, allowing for MoTe2 phase change by electrostatic doping. Here, we report phase change between the 2H and 1T' polymorphs of MoTe2 in thicknesses ranging from the monolayer to bulk-like case (73 nm) using an ionic liquid electrolyte at room temperature and in air. We find consistent evidence of a partially reversible 2H-1T' transition using in situ Raman spectroscopy where the phase change occurs in the topmost layers of the MoTe2 flake. We find a thickness-dependent transition voltage where higher voltages are necessary to drive the phase change for thicker flakes. We also show evidence of electrochemical activity during the gating process by observation of Te metal formation. This finding suggests the formation of Te vacancies which have been reported to lower the energy difference between the 2H and 1T' phases, potentially aiding the phase change process. Our discovery that the phase change can be achieved on the surface layer of bulk-like materials reveals that this electrochemical mechanism does not require isolation of a single layer and the effect may be more broadly applicable than previously thought.

ODE integration schemes for plane-wave real-time time-dependent density functional theory.

Integration schemes are implemented with a plane-wave basis in the context of real-time time-dependent density functional theory. Crank-Nicolson methods and three classes of explicit integration schemes are explored and assessed in terms of their accuracy and stability properties. Within the framework of plane-wave density functional theory, a graphene monolayer system is used to investigate the error, stability, and serial computational cost of these methods. The results indicate that Adams-Bashforth and Adams-Bashforth-Moulton methods of orders 4 and 5 outperform commonly used methods, including Crank-Nicolson and Runge-Kutta methods, in simulations where a relatively low error is desired. Parallel runtime scaling of the most competitive serial methods is presented, further demonstrating that the Adams-Bashforth and Adams-Bashforth-Moulton methods are efficient methods for propagating the time-dependent Kohn-Sham equations. Our integration schemes are implemented as an extension to the Quantum ESPRESSO code.

New Assembly-Free Bulk Layered Inorganic Vertical Heterostructures with Infrared and Optical Bandgaps.

In principle, a nearly endless number of unique van der Waals heterostructures can be created through the vertical stacking of two-dimensional (2D) materials, resulting in unprecedented potential for material design. However, this widely employed synthetic method for generating van der Waals heterostructures is slow, imprecise, and prone to introducing interlayer contaminants when compared with synthesis methods that are scalable to industrially relevant scales. Herein, we study the properties of a new class of layered bulk inorganic materials that has recently been reported that we call assembly-free bulk layered inorganic heterostructures, wherein the individual layers are of dissimilar chemical composition, distinguishing them from commonly studied layered materials. We find that these bulk materials exhibit properties similar to vertical heterostructures but without the complex and unscalable stacking process. Using state-of-the-art computational approaches, we study the electronic properties of livingstonite (HgSb4S8), a naturally occurring mineral that is a bulk lattice-commensurate heterostructure. We find that isolated bilayers of livingstonite have an intralayer HSE-06 band gap of 2.08 eV. This is the first report of a naturally occurring van der Waals heterostructure with a calculated band gap in the visible spectrum. We also studied the electronic properties of tetragonal Ti3Bi4O12, Sm2Ti3Bi2O12, orthorhombic Ti3Bi4O12, Nb3Bi5O15, LaTiNbBi2O9, and AgPbBrO and found some of them are potentially well-suited for photovoltaic applications. We also provide characterization of the electronic structure of the isolated bilayer and monolayer subcomponents of the bulk heterostructures. The report of the properties of these materials significantly enhances the library of known van der Waals heterostructures.

Defect-Mediated Alloying of Monolayer Transition-Metal Dichalcogenides.

Alloying plays a central role in tailoring the material properties of 2D transition-metal dichalcogenides (TMDs). However, despite widespread reports, the details of the alloying mechanism in 2D TMDs have remained largely unknown and are yet to be further explored. Here, we combine a set of systematic experiments with ab initio density functional theory (DFT) calculations to unravel a defect-mediated mechanism for the alloying of monolayer TMD crystals. In our alloying approach, a monolayer MoSe2 film serves as a host crystal in which exchanging selenium (Se) atoms with sulfur (S) atoms yields a MoS2 xSe2(1- x) alloy. Our study reveals that the driving force required for the alloying of CVD-grown films with abundant vacancy-type defects is significantly lower than that required for the alloying of exfoliated films with fewer vacancies. Indeed, we show that pre-existing Se vacancies in the host MoSe2 lattice mediate the replacement of chalcogen atoms and facilitate the synthesis of MoS2 xSe2(1- x) alloys. Our DFT calculations suggest that S atoms can bind to Se vacancies and then diffuse throughout the host MoSe2 lattice via exchanging the position with Se vacancies, further supporting our proposed defect-mediated alloying mechanism. Beside native vacancy defects, we show that the existence of large-scale defects in CVD-grown MoSe2 films causes the fracture of alloys under the alloying-induced strain, while no such effect is observed in exfoliated MoSe2 films. Our study provides a deep insight into the details of the alloying mechanism and enables the synthesis of 2D alloys with tunable properties.