Ultra-high on-chip optical gain in erbium-based hybrid slot waveguides.

Efficient and reliable on-chip optical amplifiers and light sources would enable versatile integration of various active functionalities on the silicon platform. Although lasing on silicon has been demonstrated with semiconductors by using methods such as wafer bonding or molecular beam epitaxy, cost-effective mass production methods for CMOS-compatible active devices are still lacking. Here, we report ultra-high on-chip optical gain in erbium-based hybrid slot waveguides with a monolithic, CMOS-compatible and scalable atomic-layer deposition process. The unique layer-by-layer nature of atomic-layer deposition enables atomic scale engineering of the gain layer properties and straightforward integration with silicon integrated waveguides. We demonstrate up to 20.1 ± 7.31 dB/cm and at least 52.4 ± 13.8 dB/cm net modal and material gain per unit length, respectively, the highest performance achieved from erbium-based planar waveguides integrated on silicon. Our results show significant advances towards efficient on-chip amplification, opening a route to large-scale integration of various active functionalities on silicon.

Ultra-strong nonlinear optical processes and trigonal warping in MoS2 layers.

Nonlinear optical processes, such as harmonic generation, are of great interest for various applications, e.g., microscopy, therapy, and frequency conversion. However, high-order harmonic conversion is typically much less efficient than low-order, due to the weak intrinsic response of the higher-order nonlinear processes. Here we report ultra-strong optical nonlinearities in monolayer MoS2 (1L-MoS2): the third harmonic is 30 times stronger than the second, and the fourth is comparable to the second. The third harmonic generation efficiency for 1L-MoS2 is approximately three times higher than that for graphene, which was reported to have a large χ (3). We explain this by calculating the nonlinear response functions of 1L-MoS2 with a continuum-model Hamiltonian and quantum mechanical diagrammatic perturbation theory, highlighting the role of trigonal warping. A similar effect is expected in all other transition-metal dichalcogenides. Our results pave the way for efficient harmonic generation based on layered materials for applications such as microscopy and imaging.Harmonic generation is a nonlinear optical process occurring in a variety of materials; the higher orders generation is generally less efficient than lower orders. Here, the authors report that the third-harmonic is thirty times stronger than the second-harmonic in monolayer MoS2.

Rapid visualization of grain boundaries in monolayer MoS2 by multiphoton microscopy.

Grain boundaries have a major effect on the physical properties of two-dimensional layered materials. Therefore, it is important to develop simple, fast and sensitive characterization methods to visualize grain boundaries. Conventional Raman and photoluminescence methods have been used for detecting grain boundaries; however, these techniques are better suited for detection of grain boundaries with a large crystal axis rotation between neighbouring grains. Here we show rapid visualization of grain boundaries in chemical vapour deposited monolayer MoS2 samples with multiphoton microscopy. In contrast to Raman and photoluminescence imaging, third-harmonic generation microscopy provides excellent sensitivity and high speed for grain boundary visualization regardless of the degree of crystal axis rotation. We find that the contrast associated with grain boundaries in the third-harmonic imaging is considerably enhanced by the solvents commonly used in the transfer process of two-dimensional materials. Our results demonstrate that multiphoton imaging can be used for fast and sensitive characterization of two-dimensional materials.

Rapid and Large-Area Characterization of Exfoliated Black Phosphorus Using Third-Harmonic Generation Microscopy.

Black phosphorus (BP) is a layered semiconductor that recently has been the subject of intense research due to its novel electrical and optical properties, which compare favorably to those of graphene and the transition metal dichalcogenides. In particular, BP has a direct bandgap that is thickness-dependent and highly anisotropic, making BP an interesting material for nanoscale optical and optoelectronic applications. Here, we present a study of the anisotropic third-harmonic generation (THG) in exfoliated BP using a fast scanning multiphoton characterization method. We find that the anisotropic THG arises directly from the crystal structure of BP. We calculate the effective third-order susceptibility of BP to be ∼1.64 × 10-19 m2 V-2. Further, we demonstrate that multiphoton microscopy can be used for rapid, large-area characterization indexing of the crystallographic orientations of many exfoliated BP flakes from one set of multiphoton images. This method is therefore beneficial for samples of areas ∼1 cm2 in future investigations of the properties and growth of BP.

Direct observation of confined acoustic phonon polarization branches in free-standing semiconductor nanowires.

Similar to electron waves, the phonon states in semiconductors can undergo changes induced by external boundaries. However, despite strong scientific and practical importance, conclusive experimental evidence of confined acoustic phonon polarization branches in individual free-standing nanostructures is lacking. Here we report results of Brillouin-Mandelstam light scattering spectroscopy, which reveal multiple (up to ten) confined acoustic phonon polarization branches in GaAs nanowires with a diameter as large as 128 nm, at a length scale that exceeds the grey phonon mean-free path in this material by almost an order-of-magnitude. The dispersion modification and energy scaling with diameter in individual nanowires are in excellent agreement with theory. The phonon confinement effects result in a decrease in the phonon group velocity along the nanowire axis and changes in the phonon density of states. The obtained results can lead to more efficient nanoscale control of acoustic phonons, with benefits for nanoelectronic, thermoelectric and spintronic devices.

Titanium dioxide slot waveguides for visible wavelengths.

We present the first, to our knowledge, experimental demonstration of a titanium dioxide slot waveguide operating in the visible range of light. Ring resonators based on slot waveguides were designed, fabricated, and characterized for λ≃650 nm. The fabrication method includes atomic layer deposition, electron beam lithography, and reactive ion etching. The required narrow slot widths of a few tens of nanometers were achieved by using a conformal atomic layer re-coating technique. This unique feature-size-reduction technique was applied after the final etching step.

Investigation of second- and third-harmonic generation in few-layer gallium selenide by multiphoton microscopy.

Gallium selenide (GaSe) is a layered semiconductor and a well-known nonlinear optical crystal. The discovery of graphene has created a new vast research field focusing on two-dimensional materials. We report on the nonlinear optical properties of few-layer GaSe using multiphoton microscopy. Both second- and third-harmonic generation from few-layer GaSe flakes were observed. Unexpectedly, even the peak at the wavelength of 390 nm, corresponding to the fourth-harmonic generation or the sum frequency generation from third-harmonic generation and pump light, was detected during the spectral measurements in thin GaSe flakes.

High-quality crystallinity controlled ALD TiO2 for waveguiding applications.

We demonstrate a novel atomic layer deposition (ALD) process to make high-quality nanocrystalline titanium dioxide (TiO(2)) with intermediate Al(2)O(3) layers to limit the crystal size. The process is based on titanium chloride (TiCl(4))+water and trimethyl aluminum (TMA)+ozone processes at 250°C deposition temperature. The waveguide losses measured using a prism coupling method for 633 and 1551 nm wavelengths are as low as 0.2±0.1 dB/mm with the smallest crystal size, with losses increasing with crystal size. In comparison, plain TiO(2) deposited at 250°C without the intermediate Al(2)O(3) layers shows high scattering losses and is not viable as waveguide material. The third-order optical nonlinearity decreases with smaller crystal size as verified by third-harmonic generation microscopy but still remains high for all samples. Crystallinity controlled ALD-grown TiO(2) is an excellent candidate for various optical applications, where good thermal stability and high third-order optical nonlinearity are needed.

Rapid large-area multiphoton microscopy for characterization of graphene.

Single- and few-layer graphene was studied with simultaneous third-harmonic and multiphoton-absorption-excited fluorescence microscopy using a compact 1.55 µm mode-locked fiber laser source. Strong third-harmonic generation (THG) and multiphoton-absorption-excited fluorescence (MAEF) signals were observed with high contrast over the signal from the substrate. High contrast was also achieved between single- and bilayer graphene. The measurement is straightforward and very fast compared to typical Raman mapping, which is the conventional method for characterization of graphene. Multiphoton microscopy is also proved to be an extremely efficient method for detecting certain structural features in few-layer graphene. The accuracy and speed of multiphoton microscopy make it a very promising characterization technique for fundamental research as well as large-scale fabrication of graphene. To our knowledge, this is the first time simultaneous THG and MAEF microscopy has been utilized in the characterization of graphene. This is also the first THG microscopy study on graphene using the excitation wavelength of 1.55 µm, which is significant in telecommunications and signal processing.

Polarization properties of two-dimensional slot waveguides.

We propose and study slot waveguide geometries where both quasi-TE and quasi-TM modes may propagate highly confined within the same low-index slot region. Conventional horizontal and vertical slot waveguides can only provide high slot confinement for either the quasi-TM or quasi-TE modes, respectively. Different two-dimensional slot waveguide structures are analyzed in terms of their mode characteristics, such as the effective index, the confinement factor, and the overlap of quasi-TE and -TM modes within the slot. Attention is also paid to practical manufacturability. Various waveguide structures can be tailored to have zero birefringence or equal confinement at both polarizations. Values for the confinement factors and the overlap of the two polarizations, in the slot region, can reach 0.4 to 0.5.

Control of optical mode properties in cross-slot waveguides.

A cross-slot waveguide geometry provides high confinement of the mode field of both fundamental quasi-TE and quasi-TM modes in geometrically perpendicular slots. A unique possibility to tailor optical mode characteristics such as effective index and confinement factor quite independently for the two polarizations with geometric and material parameters is shown. Nonbirefringent cross-slot geometries are presented. Fabrication related tolerances of the cross-slot geometry for low birefringence operation are studied. Means to externally tune the birefringence by a thermo-optic effect is also analyzed. Fabrication of a cross-slot waveguide test structure is demonstrated.