Correction: Integrated silicon photonic MEMS.

[This corrects the article DOI: 10.1038/s41378-023-00498-z.].

Integrated silicon photonic MEMS.

Silicon photonics has emerged as a mature technology that is expected to play a key role in critical emerging applications, including very high data rate optical communications, distance sensing for autonomous vehicles, photonic-accelerated computing, and quantum information processing. The success of silicon photonics has been enabled by the unique combination of performance, high yield, and high-volume capacity that can only be achieved by standardizing manufacturing technology. Today, standardized silicon photonics technology platforms implemented by foundries provide access to optimized library components, including low-loss optical routing, fast modulation, continuous tuning, high-speed germanium photodiodes, and high-efficiency optical and electrical interfaces. However, silicon's relatively weak electro-optic effects result in modulators with a significant footprint and thermo-optic tuning devices that require high power consumption, which are substantial impediments for very large-scale integration in silicon photonics. Microelectromechanical systems (MEMS) technology can enhance silicon photonics with building blocks that are compact, low-loss, broadband, fast and require very low power consumption. Here, we introduce a silicon photonic MEMS platform consisting of high-performance nano-opto-electromechanical devices fully integrated alongside standard silicon photonics foundry components, with wafer-level sealing for long-term reliability, flip-chip bonding to redistribution interposers, and fibre-array attachment for high port count optical and electrical interfacing. Our experimental demonstration of fundamental silicon photonic MEMS circuit elements, including power couplers, phase shifters and wavelength-division multiplexing devices using standardized technology lifts previous impediments to enable scaling to very large photonic integrated circuits for applications in telecommunications, neuromorphic computing, sensing, programmable photonics, and quantum computing.

Silicon photonic microelectromechanical phase shifters for scalable programmable photonics.

Programmable photonic integrated circuits are emerging as an attractive platform for applications such as quantum information processing and artificial neural networks. However, current programmable circuits are limited in scalability by the lack of low-power and low-loss phase shifters in commercial foundries. Here, we demonstrate a compact phase shifter with low-power photonic microelectromechanical system (MEMS) actuation on a silicon photonics foundry platform (IMEC's iSiPP50G). The device attains (2.9π±π) phase shift at 1550 nm, with an insertion loss of (0.33-0.10+0.15)dB, a Vπ of (10.7-1.4+2.2)V, and an Lπ of (17.2-4.3+8.8)µm. We also measured an actuation bandwidth f-3dB of 1.03 MHz in air. We believe that our demonstration of a low-loss and low-power photonic MEMS phase shifter implemented in silicon photonics foundry compatible technology lifts a main roadblock toward the scale-up of programmable photonic integrated circuits.

Compact broadband suspended silicon photonic directional coupler.

Directional couplers are extensively used in photonic integrated circuits as basic components for efficient on-chip photonic signal routing. Conventionally, directional couplers are fully encapsulated in the technology's waveguide cladding material. In this Letter, we demonstrate a compact broadband directional coupler, fully suspended in air and exhibiting efficient power coupling in the cross state. The coupler is designed and built based on IMEC's iSiPP50G standard platform, and hydrofluoric (HF) vapor-etching-based post-processing allows to release the freestanding component. A low insertion loss of 0.5 dB at λ=1560nm and a 1 dB bandwidth of 35 nm at λ=1550nm have been confirmed experimentally. With a small footprint of 20µm×30µm and high mechanical stability, this directional coupler can serve as a basic building block for large-scale silicon photonic microelectromechanical systems (MEMS) circuits.

Silicon Photonic MEMS Phase-Shifter.

We present a design for an analog phase shifter based on Silicon Photonic MEMS technology. The operation principle is based on a two-step parallel plate electrostatic actuation mechanism to bring a vertically movable suspended tapered waveguide in a first step into proximity of the bus waveguide and to tune the phase of the propagating coupled mode in a second step by actuation of the suspended waveguide to tune the vertical gap. In the coupled state, the effective index of the optical supermode and the total accumulated phase delay can be varied by changing the vertical separation between the adiabatically tapered suspended and the fixed bus waveguides. Simulations predict that π phase shift can be achieved with an actuation voltage of 19 V, corresponding to a displacement of 19 nm. With an adiabatic coupler geometry, the optical signal can be coupled between the moving waveguide and the bus waveguide with low loss in a wide wavelength range from 1.5 µm to 1.6 µm keeping the average insertion loss below 0.3 dB.

Precision micro-mechanical components in single crystal diamond by deep reactive ion etching.

The outstanding material properties of single crystal diamond have been at the origin of the long-standing interest in its exploitation for engineering of high-performance micro- and nanosystems. In particular, the extreme mechanical hardness, the highest elastic modulus of any bulk material, low density, and the promise for low friction have spurred interest most notably for micro-mechanical and MEMS applications. While reactive ion etching of diamond has been reported previously, precision structuring of freestanding micro-mechanical components in single crystal diamond by deep reactive ion etching has hitherto remained elusive, related to limitations in the etch processes, such as the need of thick hard masks, micromasking effects, and limited etch rates. In this work, we report on an optimized reactive ion etching process of single crystal diamond overcoming several of these shortcomings at the same time, and present a robust and reliable method to produce fully released micro-mechanical components in single crystal diamond. Using an optimized Al/SiO2 hard mask and a high-intensity oxygen plasma etch process, we obtain etch rates exceeding 30 µm/h and hard mask selectivity better than 1:50. We demonstrate fully freestanding micro-mechanical components for mechanical watches made of pure single crystal diamond. The components with a thickness of 150 µm are defined by lithography and deep reactive ion etching, and exhibit sidewall angles of 82°-93° with surface roughness better than 200 nm rms, demonstrating the potential of this powerful technique for precision microstructuring of single crystal diamond.

Bright off-axis directional emission with plasmonic corrugations.

In this work, a new plasmonic bulls-eye structure is introduced to efficiently harvest the emitted light from diamond nitrogen vacancy (NV) centers. We show that the presence of a simple metal sub-layer underneath of a conventional bulls-eye antenna, separated by a dielectric layer, results in the spontaneous emission enhancement and increment in out-coupled light intensity. High Purcell factor is accessible in such a structure, which consequently boosts efficiency of the radiated light intensity from the structure. The structure shows considerable enhancement in far-field intensity, about three times higher than that of a one-side corrugated (conventional) optimized structure. In addition, we study for the first time asymmetric structures to steer emitted beams in two-axis. Our results show that spatial off-axial steering over a cone is approachable by introducing optimal asymmetries to grooves and ridges of the structure. The steered light retains a level of intensity even higher than conventional symmetric structures. A high value of directivity of 16 for off-axis steering is reported.

Utilizing electromagnetically induced transparency in InAs quantum dots for all-optical transistor design.

We propose a multilayer medium with semiconductor quantum dot nano-structures as a defect layer for all-optical control of the 1.55 µm probe beam. The effect of the coupling field and incoherent pump on absorption and dispersion properties of the quantum dot defect layer is investigated. Depending on the intensity of the coupling field and rate of the incoherent pump field, the possibility of the absorption cancellation and even amplification are demonstrated. The optimum values of the coupling field intensity and incoherent pump field for complete transmission or amplification are obtained. The dynamical behavior of the structure is investigated, and the estimated switching time scales are about tens of picoseconds.

Proposal for a compact design for real-time optical bistability switching via a semiconductor cavity containing quantum wells.

A compact design for semiconductor cavities including coupled AlGaN/AlGaAs quantum wells is proposed for all-optical switching of the bistability process. First, physical and geometrical parameters are optimized to engineer the conducting electrons' energy levels in the quantum wells. Then, finite element simulations based on Schrödinger equations are executed to estimate the states of the charge carriers for AlGaN/AlGaAs as the active region. Next, the optical coupling and pumping fields are applied to the active region to both initiate the bistability and facilitate its real-time control. The Maxwell-Bloch approach based on rotating-wave approximation is employed to analyze the optimal conditions for controlling the behavior of optical bistability (OB). It is found that the threshold of OB can be optimized to have low values by tuning the intensity of coupling fields and the rate of an incoherent pumping field. This provides a fast real-time switching facility to control output intensity of the systems. The proposed scheme could have potential applications in optical memories, in which it is paramount to have active control over the readout of the system's quantum states. Thanks to the high nonlinear response of semiconductors, the featured device would be a prospective candidate for on-chip ultrasubluminal wave propagation studies and narrowband real-time switching and filtering applications.

Compact triple coupled quantum well system for electrical/optical control of optical bi/multistability.

Optical bistability (OB) and optical multistability (OM) are investigated in a triple coupled quantum wells system inside a semiconductor cavity sandwiched by distributed Bragg reflector mirrors. By proper manipulation of the optical and electrical parameters, the behaviors of OB and OM can be efficiently controlled. We show that, by tuning the tunneling rates between the quantum wells, the threshold and hysteresis cycle of OB and OM can be engineered. The effect of the incoherent pump field as well as the cooperation parameter on creation of OB is also discussed.

Optically controllable switch for light propagation based on triple coupled quantum dots.

A switch is proposed for controlling the subluminal and superluminal light propagation through the triple coupled quantum dots system. The steady-state and transient behavior of the absorption and the dispersion of a probe pulse through a triple quantum dots molecule are investigated. We demonstrate that the group velocity of a light pulse can be controlled from subluminal to superluminal or vice versa by controlling the rates of incoherent pumping and tunneling between electronic levels. Switching time is calculated by discussing the dependency of optical transient properties on the incoherent pumping and inter-dot tunneling rates. We introduce three controlling parameters that make it possible to control the wave propagation electrically or even optically in such coupled quantum dot systems.