Far-from-Equilibrium Electron-Phonon Interactions in Optically Excited Graphene.

Comprehending far-from-equilibrium many-body interactions is one of the major goals of current ultrafast condensed matter physics research. Here, a particularly interesting but barely understood situation occurs during a strong optical excitation, where the electron and phonon systems can be significantly perturbed and the quasiparticle distributions cannot be described with equilibrium functions. In this work, we use time- and angle-resolved photoelectron spectroscopy to study such far-from-equilibrium many-body interactions for the prototypical material graphene. In accordance with theoretical simulations, we find remarkable transient renormalizations of the quasiparticle self-energy caused by the photoinduced nonequilibrium conditions. These observations can be understood by ultrafast scatterings between nonequilibrium electrons and strongly coupled optical phonons, which signify the crucial role of ultrafast nonequilibrium dynamics on many-body interactions. Our results advance the understanding of many-body physics in extreme conditions, which is important for any endeavor to optically manipulate or create non-equilibrium states of matter.

Comparison and Validation of Different Magnetic Force Microscopy Calibration Schemes.

The future of consumer electronics depends on the capability to reliably fabricate nanostructures with given physical properties. Therefore, techniques to characterize materials and devices with nanoscale resolution are crucial. Among these is magnetic force microscopy (MFM), which transduces the magnetic force between the sample and a magnetic oscillating probe into a phase shift, enabling the locally resolved study of magnetic field patterns down to 10 nm. Here, the progress done toward making quantitative MFM a common tool in nanocharacterization laboratories is shown. The reliability and ease of use of the calibration method based on a magnetic reference sample, with a calculable stray field, and a deconvolution algorithm is demonstrated. This is achieved by comparing two calibration approaches combined with numerical modeling as a quantitative link: measuring the probe's effect on the voltage signal when scanning above a nanosized graphene Hall sensor, and recording the MFM phase shift signal when the probe scans across magnetic fields produced by metallic microcoils. Furthermore, in the case of the deconvolution algorithm, it is shown how it can be applied using the open-source software package Gwyddion. The estimated magnetic dipole approximation for the most common probes currently in the market is also reported.

Substrate induced nanoscale resistance variation in epitaxial graphene.

Graphene, the first true two-dimensional material, still reveals the most remarkable transport properties among the growing class of two-dimensional materials. Although many studies have investigated fundamental scattering processes, the surprisingly large variation in the experimentally determined resistances is still an open issue. Here, we quantitatively investigate local transport properties of graphene prepared by polymer assisted sublimation growth using scanning tunneling potentiometry. These samples exhibit a spatially homogeneous current density, which allows to analyze variations in the local electrochemical potential with high precision. We utilize this possibility by examining the local sheet resistance finding a significant variation of up to 270% at low temperatures. We identify a correlation of the sheet resistance with the stacking sequence of the 6H silicon carbide substrate and with the distance between the graphene and the substrate. Our results experimentally quantify the impact of the graphene-substrate interaction on the local transport properties of graphene.

Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics.

This paper reports on the direct qualitative and quantitative performance comparisons of the field-effect transistors (FETs) based on vertical gallium nitride nanowires (GaN NWs) with different NW numbers (i.e., 1-100) and diameters (i.e., 220-640 nm) fabricated on the same wafer substrate to prove the feasibility of employing the vertical 3D architecture concept towards massively parallel electronic integration, particularly for logic circuitry and metrological applications. A top-down approach combining both inductively coupled plasma dry reactive ion etching (ICP-DRIE) and wet chemical etching is applied in the realization of vertically aligned GaN NWs on metalorganic vapor-phase epitaxy (MOVPE)-based GaN thin films with specific doping profiles. The FETs are fabricated involving a stack of n-p-n GaN layers with embedded inverted p-channel, top drain bridging contact, and wrap-around gating technology. From the electrical characterization of the integrated NWs, a threshold voltage (Vth) of (6.6 ± 0.3) V is obtained, which is sufficient for safely operating these devices in an enhancement mode (E-mode). Aluminium oxide (Al2O3) grown by atomic layer deposition (ALD) is used as the gate dielectric material resulting in nearly-zero gate hysteresis (i.e., forward and backward sweep Vth shift (ΔVth) of ~0.2 V). Regardless of the required device processing optimization for having better linearity profile, the upscaling capability of the devices from single NW to NW array in terms of the produced currents could already be demonstrated. Thus, the presented concept is expected to bridge the nanoworld into the macroscopic world, and subsequently paves the way to the realization of innovative large-scale vertical GaN nanoelectronics.

Metrological large range magnetic force microscopy.

A new metrological large range magnetic force microscope (Met. LR-MFM) has been developed. In its design, the scanner motion is measured by using three laser interferometers along the x, y, and z axes. Thus, the scanner position and the lift height of the MFM can be accurately and traceably determined with subnanometer accuracy, allowing accurate and traceable MFM measurements. The Met. LR-MFM has a measurement range of 25 mm × 25 mm × 5 mm, larger than conventional MFMs by almost three orders of magnitude. It is capable of measuring samples from the nanoscale to the macroscale, and thus, it has the potential to bridge different magnetic field measurement tools having different spatially resolved scales. Three different measurement strategies referred to as Topo&MFM, MFMXY, and MFMZ have been developed. The Topo&MFM is designed for measuring topography and MFM phase images, similar to conventional MFMs. The MFMXY differs from the Topo&MFM as it does not measure the topography profile of surfaces at the second and successive lines, thus reducing tip wear and saving measurement time. The MFMZ allows the imaging of the stray field in the xz- or yz-planes. A number of measurement examples on a multilayered thin film reference sample made of [Co(0.4 nm)/Pt(0.9 nm)]100 and on a patterned magnetic multilayer [Co(0.4 nm)/Pt(0.9 nm)]10 with stripes with a 9.9 µm line width and 20 µm periodicity are demonstrated, indicating excellent measurement performance.

Hybrid normal metal/ferromagnetic nanojunctions for domain wall tracking.

Hybrid normal metal/ferromagnetic, gold/permalloy (Au/Py), nanojunctions are used to investigate magnetoresistance effects and track magnetization spatial distribution in L-shaped Py nanostructures. Transversal and longitudinal resistances are measured and compared for both straight and 90° corner sections of the Py nanostructure. Our results demonstrate that the absolute change in resistance is larger in the case of longitudinal measurements. However, due to the small background resistance, the relative change in the transversal resistance along the straight section is several orders of magnitude larger than the analogous longitudinal variation. These results prove that hybrid nanojunctions represent a significant improvement with respect to previously studied all-ferromagnetic crosses, as they also reduce the pinning potential at the junction and allow probing the magnetization locally. In addition, unusual metastable states with longitudinal domain walls along Py straight sections are observed. Micromagnetic simulations in combination with a magnetotransport model allow interpretation of the results and identification of the observed transitions.

GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors.

Vertically aligned gallium nitride (GaN) nanowire (NW) arrays have attracted a lot of attention because of their potential for novel devices in the fields of optoelectronics and nanoelectronics. In this work, GaN NW arrays have been designed and fabricated by combining suitable nanomachining processes including dry and wet etching. After inductively coupled plasma dry reactive ion etching, the GaN NWs are subsequently treated in wet chemical etching using AZ400K developer (i.e., with an activation energy of 0.69 ± 0.02 eV and a Cr mask) to form hexagonal and smooth a-plane sidewalls. Etching experiments using potassium hydroxide (KOH) water solution reveal that the sidewall orientation preference depends on etchant concentration. A model concerning surface bonding configuration on crystallography facets has been proposed to understand the anisotropic wet etching mechanism. Finally, NW array-based vertical field-effect transistors with wrap-gated structure have been fabricated. A device composed of 99 NWs exhibits enhancement mode operation with a threshold voltage of 1.5 V, a superior electrostatic control, and a high current output of >10 mA, which prevail potential applications in next-generation power switches and high-temperature digital circuits.

Quantitative measurement of the magnetic moment of individual magnetic nanoparticles by magnetic force microscopy.

The quantitative measurement of the magnetization of individual magnetic nanoparticles (MNPs) using magnetic force microscopy (MFM) is described. Quantitative measurement is realized by calibration of the MFM signal using an MNP reference sample with traceably determined magnetization. A resolution of the magnetic moment of the order of 10(-18) A m(2) under ambient conditions is demonstrated, which is presently limited by the tip's magnetic moment and the noise level of the instrument. The calibration scheme can be applied to practically any magnetic force microscope and tip, thus allowing a wide range of future applications, for example in nanomagnetism and biotechnology.

A molecular quantized charge pump.

A novel single electron pump based on individual molecules (a single wall carbon nanotube) is discussed in terms of the hybrid superconducting-normal conducting pumping principle. A concept demonstration device has been built based on a carbon nanotube contacted by Nb-Ti leads. Charge current quantization is achieved through rf modulation of the back gate voltage. The device is able to transfer a given number of electrons per pumping cycle. Single electron pumping is achieved for pumping frequencies up to 80 MHz.