1.
Phys Rev Lett
; 106(19): 196404, 2011 May 13.
Artigo
em Inglês
| MEDLINE
| ID: mdl-21668180
RESUMO
Cyclotron resonance of two-dimensional electrons is studied at low temperatures down to 0.4 K for a high-mobility Si/SiGe quantum well which exhibits a metallic temperature dependence of dc resistivity ρ. The relaxation time τ(CR) shows a negative temperature dependence, which is similar to that of the transport scattering time τ(t) obtained from ρ. The ratio τ(CR)/τ(t) at 0.4 K increases as the electron density N(s) decreases, and exceeds unity when N(s) approaches the critical density for the metal-insulator transition.