RESUMO
This paper presents a highly integrated C-band RF transceiver front-end design consisting of two Single Pole Double Throw (SPDT) transmit/receive (T/R) switches, a Low Noise Amplifier (LNA), and a Power Amplifier (PA) for Ultra-Wideband (UWB) positioning system applications. When fabricated using a 0.25 µm GaAs pseudomorphic high electron mobility transistor (pHEMT) process, the switch is optimized for system isolation and stability using inductive resonance techniques. The transceiver front-end achieves overall bandwidth expansion as well as the flat noise in receive mode using the bandwidth expansion technique. The results show that the front-end modules (FEM) have a typical gain of 22 dB in transmit mode, 18 dB in receive mode, and 2 dB noise in the 4.5-8 GHz band, with a chip area of 1.56 × 1.46 mm2. Based on the available literature, it is known that the proposed circuit is the most highly integrated C-band RF transceiver front-end design for UWB applications in the same process.