Surface Modification of Silicon Nanowires with Siloxane Molecules for High-Performance Hydrovoltaic Devices.

Hydrovoltaic devices (HDs) based on silicon nanowires (SiNWs) have attracted significant attention due to their potential of high output power and good compatibility with Si-based photovoltaic devices for integrated power systems. However, it remains a major challenge to further improve the output performance of SiNW HDs for practical applications. Here, a new strategy to modify the surface of SiNWs with siloxane molecules is proposed to improve the output performance of the SiNW HDs. After modification, both the open-circuit voltage (Voc) and short-circuit current density (Jsc) of n-type SiNW HDs can be improved by approximately 30%, while the output power density can be greatly increased by over 200%. With siloxane modification, Si-OH groups on the surface of typical SiNWs are replaced by Si-O-Si chemical bonds that have a weaker electron-withdrawing capability. More free electrons in n-type SiNWs are liberated from surface bound states and participate in directed flow induced by water evaporation, thereby improving the output performance of HDs. The improved performance is significant for system integration applications as it reduces the number of required devices. Three siloxane-modified SiNW HDs in series are able to drive a 2 V light-emitting diode (LED), whereas four unmodified devices in series are initially needed for the same task. This work provides a simple yet effective strategy for surface modification to improve the output performance of SiNW HDs. Further research into the effect of different surface modifications on the performance of SiNW HDs will greatly promote their performance enhancement and practical applications.

Modulating the density of silicon nanowire arrays for high-performance hydrovoltaic devices.

Hydrovoltaic devices (HDs) based on silicon nanowire (SiNW) arrays have received intensive attention due to their simple preparation, mature processing technology, and high output power. Investigating the impact of structure parameters of SiNWs on the performance of HDs can guide the optimization of the devices, but related research is still not sufficient. This work studies the effect of the SiNW density on the performance of HDs. SiNW arrays with different densities were prepared by controlling the react time of Si wafers in the seed solution (tseed) in metal-assisted chemical etching. Density of SiNW array gradually decreases with the increase oftseed. HDs were fabricated based on SiNW arrays with different densities. The research results indicate that the open-circuit voltage gradually decreases with increasingtseed, while the short-circuit current first increases and then decreases with increasingtseed. Overall, SiNW devices withtseedof 20 s and 60 s have the best output performance. The difference in output performance of HDs based on SiNWs with different densities is attributed to the difference in the gap sizes between SiNWs, specific surface area of SiNWs, and the number of SiNWs in parallel. This work gives the corresponding relationship between the preparation conditions of SiNWs, array density, and output performance of hydrovoltaic devices. Density parameters of SiNW arrays with optimized output performance and corresponding preparation conditions are revealed. The relevant results have important reference value for understanding the mechanism of HDs and designing structural parameters of SiNWs for high-performance hydrovoltaic devices.

Array density effect on the optical and photoelectric properties of silicon nanowire arrays via Ag-assisted chemical etching.

Ag-assisted chemical etching (AgACE) is a low-cost method to produce silicon nanowires (SiNWs) for photoelectric applications. Structure parameters of SiNWs have great impact on their optical and photoelectric properties, which are worth studying for fabricating high-performance devices. However, array density of SiNWs via AgACE, as an important structural parameter, has not been sufficiently investigated. Here, array density effect on the optical and photoelectric properties of SiNWs is experimentally investigated. SiNW arrays with different densities (silicon occupation ratio of 7%-34.5%) were prepared through controlling the reaction time of silicon wafers in the seed solution (tseed). The SiNW array with atseedof 90 s shows optimum light absorption over 98% in the wavelength range of 300-1000 nm, though all the samples have light absorption over 95% due to the light trapping effect of nanowire array structure. In addition, the SiNW array with atseedof 90 s exhibits the best photoelectric property. SiNW arrays with shortertseedand higher density suffer more surface recombination, harming the photoelectric property. In SiNW arrays with longertseedthan 90 s and lower density, some SiNWs topple down and break, which has an adverse effect on transport and collection of carriers. These results indicate that the array density of SiNWs via AgACE has obvious effect on their photoelectric property. SiNW arrays via AgACE with atseedof 90 s are ideal for photoelectric devices. This work is potential to guide SiNW fabrication for photoelectric applications.