RESUMO
Traditional photodetectors usually respond to photons larger than the bandgap of a photosensitive material. In contrast to traditional photodetectors for broad-spectrum detection, the currently reported PbS/PMMA/PbSe CQD silicon-based photodetectors can detect spectrally selective light sources. This is attributed to two layers with specific functions, a filter layer on top and a photosensitive layer in contact with the silicon channel. Each of the target sources of the device has a selectivity factor of more than 10 against non-target sources. The s-PD (selective photodetector) has three significant advantages: the ability to tunably adjust the detectable spectral range by easily adjusting the size of QDs. The second is using a new architecture to achieve a high-performance selective photodetector, and finally, the ease-of-integration with silicon. The above features enable the device to meet the needs of particular fields such as secure communication, surveillance, and infrared imaging.
RESUMO
Silicon-based photodetectors as the main force in visible and near-infrared detection devices have been deeply embedded in modern technology and human society, but due to the characteristics of silicon itself, its response wavelength is generally less than 1100 nm. It is an interesting study to combine the state-of-art silicon processing with emerging infrared-sensitive Lead sulfide colloidal quantum dots (PbS-CQDs) to produce a photodetector that can detect infrared light. Here, we demonstrated a silicon-compatible photodetector that could be integrated on-chip, and also sensitive to infrared light which is owing to a PbS-CQDs absorption layer with tunable bandgap. The device exhibit extremely high gain which reaches maximum detectivity [Formula: see text], fast response 211/558 µs, and extremely high external quantum efficiency [Formula: see text], which is owing to new architecture and reasonable ligand exchange options. The performance of the device originates from the new architecture, that is, using the photovoltaic voltage generated by the surface of PbS-CQDs to change the width of the depletion layer to achieve detection. Besides, the performance improvement of devices comes from the addition of PbS-CQDs (Ethanedithiol treated) layer, which effectively reduces the fall time and makes the device expected to work at higher frequencies. Our work paves the way for the realization of cost-efficient high-performance silicon compatible infrared optoelectronic devices.
RESUMO
A novel controlled drug delivery system based on copolymer covalently linked paclitaxel via a disulfide bond was constructed. Copolymer with poly(ethylene glycol) (PEG) side chains and carboxyl groups on the backbone was prepared by radical copolymerization of tert-butyl acrylate and poly(ethylene glycol) methyl ether acrylate, followed by selectively hydrolyzing tert-butyl groups to carboxyl groups. Utilizing the carboxyl group as an active reaction site, paclitaxel, a well-known chemotherapeutic drug, could be covalently linked to the backbone of a copolymer via a disulfide bond, and the loading content of paclitaxel could reach up to 32 wt %. In aqueous solution, this drug-loaded copolymer could self-assemble into a spherical micelle, with the hydrophobic drug as the core and hydrophilic PEG as the shell. The mean diameter of the micelles evaluated by transmission electron microscopy (TEM) and dynamic light scattering (DLS) was approximately 60 nm. The in vitro cytotoxicity experiments showed that the copolymer was biocompatible and suitable to use as a drug carrier. After covalently loading the drug, the copolymer showed apparent cytotoxicity to OS-RC-2 cells (kidney tumor cells) and low cytotoxicity to macrophage cells (human normal cells), indicating that the disulfide bond was stable in human normal cells, but would be broken in tumor cells. This selective bond scission behavior is potentially favorable for reducing the toxic and side effects of chemotherapeutic drugs.