Single or Vortex Ferroelectric and Ferromagnetic Domain Nanodot Array of Magnetoelectric BiFe0.9Co0.1O3.

Nanodots composed of multiferroic cobalt-substituted BiFeO3, a ferroelectric ferromagnet at room temperature, are fabricated by pulsed laser deposition using anodized porous alumina as masks. The obtained nanodots are approximately 60 nm in diameter, more than 10 nm in thickness, and approximately 70 Gbit/in.2 in density. Piezoresponse and magnetic force microscopies show both ferroelectricity and ferromagnetism with a single-domain nature. It is also found that the dot with 190 nm diameter had multidomain vortex ferroelectric and magnetic structures indicating the strong magnetoelectric coupling. The single-domain cobalt-substituted BiFeO3 nanodots are suitable for verifying magnetization reversal by the electric field, which is the first step in the development of low-power-consumption nonvolatile magnetic memory devices.

Out-of-plane polarization reversal and changes in in-plane ferroelectric and ferromagnetic domains of multiferroic BiFe0.9Co0.1O3 thin films by water printing.

BiFe0.9Co0.1O3 is a promising material for an ultra-low-power-consumption nonvolatile magnetic memory device because local magnetization reversal is possible through application of an electric field. Here, changes in ferroelectric and ferromagnetic domain structures in a multiferroic BiFe0.9Co0.1O3 thin film induced by "water printing", which is a polarization reversal method involving chemical bonding and charge accumulation at the interface between the liquid and the film, was investigated. Water printing using pure water with pH = 6.2 resulted in an out-of-plane polarization reversal from upward to downward. The in-plane domain structure remained unchanged after the water printing process, indicating that 71° switching was achieved in 88.4% of the observation area. However, magnetization reversal was observed in only 50.1% of the area, indicating a loss of correlation between the ferroelectric and magnetic domains because of the slow polarization reversal due to nucleation growth.

Magnetization controlled by crystallization in soft magnetic Fe-Si-B-P-Cu alloys.

Soft magnetic materials have low coercive fields and high permeability. Recently, nanocrystalline alloys obtained using annealing amorphous alloys have attracted much interest since nanocrystalline alloys with small grain sizes of tens of nanometers exhibit low coercive fields comparable to that of amorphous alloys. Since nanocrystalline soft magnetic materials attain remarkable soft magnetic properties by controlling the grain size, the crystal grains' microstructure has a substantial influence on the soft magnetic properties. In this research, we examined the magnetic properties of Fe-Si-B-P-Cu nanocrystalline soft magnetic alloys obtained by annealing amorphous alloys. During crystallization, the observation findings reveal the correlation between the generated microstructures and soft magnetic properties.

SrV0.3Fe0.7O2.8: A Vacancy-Ordered Fe-Based Perovskite Exhibiting Room-Temperature Magnetoresistance.

We report room-temperature (RT) magnetoresistance (MR) in a novel Fe-based perovskite, SrV0.3Fe0.7O2.8. This compound contains ordered oxygen vacancies in every fifth primitive perovskite (111)p plane, leading to a layered structure consisting of triple-octahedral and double-tetrahedral layers. Along with the oxygen vacancies, the transition-metal ions are also ordered: the octahedral sites are occupied by 100% of Fe ions, while the tetrahedral sites are occupied by 25% of Fe ions and 75% of V ions. As a result, SrV0.3Fe0.7O2.8 forms a magnetically striped lattice in which the octahedral layers with 100% of magnetic Fe ions are separated by the diluted magnetic layer. The compound exhibits weak ferromagnetism and shows a large negative MR (-5% at 3 T) at RT, despite the small saturation moment (0.4 µB/Fe atom). Thus, this type of layered compound is promising for further large MR by an increase of magnetization through chemical substitution.

Stabilized Charge, Spin, and Orbital Ordering by the 6s2 Lone Pair in Bi0.5Pb0.5MnO3.

Bi and Pb ions with charge degree of freedom depending on 6s2 and 6s0 electronic configurations were combined with the Mn ion in a perovskite oxide. Comprehensive theoretical and experimental investigations revealed the Bi3+0.5Pb2+0.5Mn3+0.5Mn4+0.5O3 charge ordered state with CE-type spin and dz2 orbital orderings as observed in La0.5Ca0.5MnO3, Nd0.5Sr0.5MnO3, and Bi0.5Sr0.5MnO3. The charge and orbital orderings were preserved above 500 K owing to the stereochemical activity of Bi3+ and Pb2+ ions which stabilized the structural distortion.

High mobility approaching the intrinsic limit in Ta-doped SnO2 films epitaxially grown on TiO2 (001) substrates.

Achieving high mobility in SnO2, which is a typical wide gap oxide semiconductor, has been pursued extensively for device applications such as field effect transistors, gas sensors, and transparent electrodes. In this study, we investigated the transport properties of lightly Ta-doped SnO2 (Sn1-xTaxO2, TTO) thin films epitaxially grown on TiO2 (001) substrates by pulsed laser deposition. The carrier density (ne) of the TTO films was systematically controlled by x. Optimized TTO (x = 3 × 10-3) films with ne ~ 1 × 1020 cm-3 exhibited a very high Hall mobility (µH) of 130 cm2V-1s-1 at room temperature, which is the highest among SnO2 films thus far reported. The µH value coincided well with the intrinsic limit of µH calculated on the assumption that only phonon and ionized impurities contribute to the carrier scattering. The suppressed grain-boundary scattering might be explained by the reduced density of the {101} crystallographic shear planes.

Direct Observation of Magnetization Reversal by Electric Field at Room Temperature in Co-Substituted Bismuth Ferrite Thin Film.

Using the electric field to manipulate the magnetization of materials is a potential way of making low-power-consumption nonvolatile magnetic memory devices. Despite concentrated effort in the last 15 years on magnetic multilayers and magnetoelectric multiferroic thin films, there has been no report on the reversal of out-of-plane magnetization by an electric field at room temperature without the aid of an electric current. Here, we report direct observation of out-of-plane magnetization reversal at room temperature by magnetic force microscopy after electric polarization switching of cobalt-substituted bismuth ferrite thin film grown on (110)o-oriented GdScO3 substrate. A striped pattern of ferroelectric and weakly ferromagnetic domains was preserved after reversal of the out-of-plane electric polarization.

Electric-Field-Induced Reorientation of the Magnetic Easy Plane in a Co-Substituted BiFeO3 Single Crystal.

Single crystals of BiFe0.9Co0.1O3 and BiFe0.892Mn0.008Co0.1O3, room temperature ferroelectric ferromagnets, were successfully grown by a flux method at a high pressure of 3 GPa. Remanent magnetization measurements along 18 crystallographic directions revealed the existence of a magnetic easy plane perpendicular to the electric polarization. Reorientation of the magnetic easy plane occurred in connection with 71° ferroelectric switching by applying an electric field. This is the first demonstration of an electric field affecting the local magnetic moment of Co-substituted BiFeO3.