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Colloidal quantum dots (cQDs), semiconductor materials with widely tunable properties, can be printed in submicrometer patterns through electrohydrodynamic printing, avoiding aggressive photolithography steps. Postprinting ligand exchange determines the final optoelectronic properties of the cQD structures. However, achieving a complete bulk exchange is challenging, and the conventional vibrational analysis lacks the required spatial resolution. Infrared nanospectroscopy enables quantitative analysis of vibrational signals and structural topography on the nanometer scale upon ligand substitution on lead sulfide cQDs. A solution of ethanedithiol led to rapid (â¼60 s) exchange of ≤90% of the ligands, in structures up to â¼750 nm thick. Prolonged exposures (>1 h) caused the degradation of the microstructures, with a systematic removal of cQDs regulated by surface:bulk ratios and solvent interactions. This study establishes a method for the development of devices through a combination of tunable photoactive materials, additive manufacturing of microstructures, and their quantitative nanometer-scale analysis.
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With its high mechanical strength and its remarkable thermal and electrical properties, suspended graphene has long been expected to find revolutionary applications in optoelectronics or as a membrane in nano-devices. However, the lack of efficient transfer and patterning processes still limits its potential. In this work, we report an optimized anthracene-based transfer process to suspend few layers of graphene (1-, 2- and 4-layers) in the millimeter range (up to 3 mm) with high reproducibility. We have explored the advantages and limitations for patterning of these membranes with micrometer-resolution by focused ion beam (FIB) and picosecond pulsed laser ablation techniques. The FIB approach offers higher patterning resolution but suffers from the low throughput. We demonstrate that cold laser ablation is a fast and flexible method for micro-structuring of suspended graphene. One promising field of application of ultimately thin, microporous graphene membranes is their use as next-generation cell culture supports as alternative to track-etched polymer membranes, which often exhibit poor permeability and limited cell-to-cell communication across the membranes. To this end, we confirmed good adhesion and high viability of placental trophoblast cells cultivated on suspended porous graphene membranes without rupturing of the membranes. Overall, there is high potential for the further development of ultrathin suspended graphene membranes for many future applications, including their use for biobarrier cell culture models to enable predictive transport and toxicity assessment of drugs, environmental pollutants, and nanoparticles.
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Grafite , Feminino , Gravidez , Humanos , Membranas Artificiais , Reprodutibilidade dos Testes , Placenta , Técnicas de Cultura de CélulasRESUMO
We report a technological concept for freestanding photonic elements based on metamaterials fabricated on polymer films by clean-room processes and framed using 3D printing. A spin-coated cyclic olefin copolymer (TOPAS) of variable thickness down to one micrometer was used as the substrate onto which metamaterials were fabricated using optical lithography. We demonstrate the possibility of applying a second TOPAS layer to protect the device or to allow for stacking another metamaterial layer. To obtain freestanding elements, frames were 3D printed directly on top of the metamaterial before lift-off from the carrier wafer. This ensured maintaining the flatness of the elements. Both the cleanroom process and the 3D printing enabled the design and manufacturing of elements in different sizes and shapes, e.g., to adapt to specific experimental set-ups and holder geometries or to be compatible with standard optical mounts. While TOPAS is transparent for wavelengths from UV to the far infrared, except for a few infrared absorption lines, we illustrate the concept with the simulation and manufacturing of THz band-pass filters. The performance of the fabricated filters was assessed using THz time-domain spectroscopy. The process is scalable to other wavelength ranges and has the potential for upscaling in manufacturing.
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Extreme miniaturization of infrared spectrometers is critical for their integration into next-generation consumer electronics, wearables and ultrasmall satellites. In the infrared, there is a necessary compromise between high spectral bandwidth and high spectral resolution when miniaturizing dispersive elements, narrow band-pass filters and reconstructive spectrometers. Fourier-transform spectrometers are known for their large bandwidth and high spectral resolution in the infrared; however, they have not been fully miniaturized. Waveguide-based Fourier-transform spectrometers offer a low device footprint, but rely on an external imaging sensor such as bulky and expensive InGaAs cameras. Here we demonstrate a proof-of-concept miniaturized Fourier-transform waveguide spectrometer that incorporates a subwavelength and complementary-metal-oxide-semiconductor-compatible colloidal quantum dot photodetector as a light sensor. The resulting spectrometer exhibits a large spectral bandwidth and moderate spectral resolution of 50 cm-1 at a total active spectrometer volume below 100 µm × 100 µm × 100 µm. This ultracompact spectrometer design allows the integration of optical/analytical measurement instruments into consumer electronics and space devices.
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With increasing computing demands, serial processing in von Neumann architectures built with zeroth-order complexity digital circuits is saturating in computational capacity and power, entailing research into alternative paradigms. Brain-inspired systems built with memristors are attractive owing to their large parallelism, low energy consumption, and high error tolerance. However, most demonstrations have thus far only mimicked primitive lower-order biological complexities using devices with first-order dynamics. Memristors with higher-order complexities are predicted to solve problems that would otherwise require increasingly elaborate circuits, but no generic design rules exist. Here, we present second-order dynamics in halide perovskite memristive diodes (memdiodes) that enable Bienenstock-Cooper-Munro learning rules capturing both timing- and rate-based plasticity. A triplet spike timing-dependent plasticity scheme exploiting ion migration, back diffusion, and modulable Schottky barriers establishes general design rules for realizing higher-order memristors. This higher order enables complex binocular orientation selectivity in neural networks exploiting the intrinsic physics of the devices, without the need for complicated circuitry.
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Many in-memory computing frameworks demand electronic devices with specific switching characteristics to achieve the desired level of computational complexity. Existing memristive devices cannot be reconfigured to meet the diverse volatile and non-volatile switching requirements, and hence rely on tailored material designs specific to the targeted application, limiting their universality. "Reconfigurable memristors" that combine both ionic diffusive and drift mechanisms could address these limitations, but they remain elusive. Here we present a reconfigurable halide perovskite nanocrystal memristor that achieves on-demand switching between diffusive/volatile and drift/non-volatile modes by controllable electrochemical reactions. Judicious selection of the perovskite nanocrystals and organic capping ligands enable state-of-the-art endurance performances in both modes - volatile (2 × 106 cycles) and non-volatile (5.6 × 103 cycles). We demonstrate the relevance of such proof-of-concept perovskite devices on a benchmark reservoir network with volatile recurrent and non-volatile readout layers based on 19,900 measurements across 25 dynamically-configured devices.
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Hexagonal boron nitride (hBN) has emerged as a promising material platform for nanophotonics and quantum sensing, hosting optically active defects with exceptional properties such as high brightness and large spectral tuning. However, precise control over deterministic spatial positioning of emitters in hBN remained elusive for a long time, limiting their proper correlative characterization and applications in hybrid devices. Recently, focused ion beam (FIB) systems proved to be useful to engineer several types of spatially defined emitters with various structural and photophysical properties. Here we systematically explore the physical processes leading to the creation of optically active defects in hBN using FIB and find that beam-substrate interaction plays a key role in the formation of defects. These findings are confirmed using transmission electron microscopy, which reveals local mechanical deterioration of the hBN layers and local amorphization of ion beam irradiated hBN. Additionally, we show that, upon exposure to water, amorphized hBN undergoes a structural and optical transition between two defect types with distinctive emission properties. Moreover, using super-resolution optical microscopy combined with atomic force microscopy, we pinpoint the exact location of emitters within the defect sites, confirming the role of defected edges as primary sources of fluorescent emission. This lays the foundation for FIB-assisted engineering of optically active defects in hBN with high spatial and spectral control for applications ranging from integrated photonics, to nanoscale sensing, and to nanofluidics.
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Infrared light detection enables diverse technologies ranging from night vision to gas analysis. Emerging technologies such as low-cost cameras for self-driving cars require highly sensitive, low-cost photodetector cameras with spectral sensitivities up to wavelengths of 10 µm. For this purpose, colloidal quantum dot (QD) graphene phototransistors offer a viable alternative to traditional technologies owing to inexpensive synthesis and processing of QDs. However, the spectral range of QD/graphene phototransistors is thus far limited to 1.6 µm. Here, HgTe QD/graphene phototransistors with spectral sensitivity up to 3 µm are presented, with specific detectivities of 6 × 108 Jones at a wavelength of 2.5 µm and a temperature of 80 K. Even at kHz light modulation frequencies, specific detectivities exceed 108 Jones making them suitable for fast video imaging. The simple device architecture and QD film patterning in combination with a broad spectral sensitivity manifest an important step toward low-cost, multi-color infrared cameras.
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Luminescent organic-inorganic low-dimensional ns2 metal halides are of rising interest as thermographic phosphors. The intrinsic nature of the excitonic self-trapping provides for reliable temperature sensing due to the existence of a temperature range, typically 50-100 K wide, in which the luminescence lifetimes (and quantum yields) are steeply temperature-dependent. This sensitivity range can be adjusted from cryogenic temperatures to above room temperature by structural engineering, thus enabling diverse thermometric and thermographic applications ranging from protein crystallography to diagnostics in microelectronics. Owing to the stable oxidation state of Sb3+ , Sb(III)-based halides are far more attractive than all major non-heavy-metal alternatives (Sn-, Ge-, Bi-based halides). In this work, the relationship between the luminescence characteristics and crystal structure and microstructure of TPP2 SbBr5 (TPP = tetraphenylphosphonium) is established, and then its potential is showcased as environmentally stable and robust phosphor for remote thermography. The material is easily processable into thin films, which is highly beneficial for high-spatial-resolution remote thermography. In particular, a compelling combination of high spatial resolution (1 µm) and high thermometric precision (high specific sensitivities of 0.03-0.04 K-1 ) is demonstrated by fluorescence-lifetime imaging of a heated resistive pattern on a flat substrate, covered with a solution-spun film of TPP2 SbBr5 .
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Colloidal PbS quantum dot (QD)/graphene hybrid photodetectors are emerging QD technologies for affordable infrared light detectors. By interfacing the QDs with graphene, the photosignal of these detectors is amplified, leading to high responsivity values. While these detectors have been mainly operated at room temperature, low-temperature operation is required for extending their spectral sensitivity beyond a wavelength of 3 µm. Here, we unveil the temperature-dependent response of PbS QD/graphene phototransistors by performing steady-state and time-dependent measurements over a large temperature range of 80-300 K. We find that the temperature dependence of photoinduced charge carrier transfer from the QD layer to graphene is (i) not impeded by freeze-out of the (Schottky-like) potential barrier at low temperatures, (ii) tremendously sensitive to QD surface states (surface oxidation), and (iii) minimally affected by the ligand exposure time and QD layer thickness. Moreover, the specific detectivity of our detectors increases with cooling, with a maximum measured specific detectivity of at least 1010 Jones at a wavelength of 1280 nm and a temperature of 80 K, which is an order of magnitude larger compared to the corresponding room temperature value. The temperature- and gate voltage-dependent characterization presented here constitutes an important step in expanding our knowledge of charge transfer at interfaces of low-dimensional materials and toward the realization of next-generation optoelectronic devices.
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The rapid evolution of the neuromorphic computing stimulates the search for novel brain-inspired electronic devices. Synaptic transistors are three-terminal devices that can mimic the chemical synapses while consuming low power, whereby an insulating dielectric layer physically separates output and input signals from each other. Appropriate choice of the dielectric is crucial in achieving a wide range of operation frequencies in these devices. Here we report synaptic transistors with printed aluminum oxide dielectrics, improving the operation frequency of solution-processed synaptic transistors by almost two orders of magnitude to 50 kHz. Fabricated devices, yielding synaptic response for all audio frequencies (20 Hz to 20 kHz), are employed in an acoustic response system to show the potential for future research in neuro-acoustic signal processing with printed oxide electronics.
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Materiais Biomiméticos , Processamento de Sinais Assistido por Computador , Sinapses/fisiologia , Transistores Eletrônicos , Óxido de Alumínio , Biomimética , EletrônicaRESUMO
Attaining thermodynamic stability of colloids in a broad range of concentrations has long been a major thrust in the field of colloidal ligand-capped semiconductor nanocrystals (NCs). This challenge is particularly pressing for the novel NCs of cesium lead halide perovskites (CsPbX3; X = Cl, Br) owing to their highly dynamic and labile surfaces. Herein, we demonstrate that soy lecithin, a mass-produced natural phospholipid, serves as a tightly binding surface-capping ligand suited for a high-reaction yield synthesis of CsPbX3 NCs (6-10 nm) and allowing for long-term retention of the colloidal and structural integrity of CsPbX3 NCs in a broad range of concentrations-from a few ng/mL to >400 mg/mL (inorganic core mass). The high colloidal stability achieved with this long-chain zwitterionic ligand can be rationalized with the Alexander-De Gennes model that considers the increased particle-particle repulsion due to branched chains and ligand polydispersity. The versatility and immense practical utility of such colloids is showcased by the single NC spectroscopy on ultradilute samples and, conversely, by obtaining micrometer-thick, optically homogeneous dense NC films in a single spin-coating step from ultraconcentrated colloids.
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Proteins, nucleic acids and ions secreted from single cells are the key signalling factors that determine the interaction of cells with their environment and the neighbouring cells. It is possible to study individual ion channels by pipette clamping, but it is difficult to dynamically monitor the activity of ion channels and transporters across the cellular membrane. Here we show that a solid-state nanopore integrated in an atomic force microscope can be used for the stochastic sensing of secreted molecules and the activity of ion channels in arbitrary locations both inside and outside a cell. The translocation of biomolecules and ions through the nanopore is observed in real time in live cells. The versatile nature of this approach allows us to detect specific biomolecules under controlled mechanical confinement and to monitor the ion-channel activities of single cells. Moreover, the nanopore microscope was used to image the surface of the nuclear membrane via high-resolution scanning ion conductance measurements.
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Canais Iônicos/análise , Íons/análise , Microscopia de Força Atômica/instrumentação , Nanoporos , Desenho de Equipamento , Células HEK293 , Humanos , Nanoporos/ultraestrutura , Análise de Célula Única/instrumentaçãoRESUMO
This article presents an innovative high spectral resolution waveguide spectrometer, from the concept to the prototype demonstration and the test results. The main goal is to build the smallest possible Fourier transform spectrometer (FTS) with state of the art technology. This waveguide FTS takes advantage of a customized pattern of nano-samplers fabricated on the surface of a planar waveguide that allows the increase of the measurement points necessary for increasing the spectral bandwidth of the FTS in a fully static way. The use of a planar waveguide on the other hand allows enhancing the throughput in a waveguide spectrometer compared to the conventional devices made of single-mode waveguides. A prototype is made in silicon oxynitride/silicon dioxide technology and characterized in the visible range. This waveguide spectrometer shows a nominal bandwidth of 256~nm at a central wavelength of 633~nm thanks to a custom pattern of nanodisks providing a µm sampling interval. The implementation of this innovative waveguide FTS for a real-case scenario is explored and further development of such device for the imaging FTS application is discussed.
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Recent years have seen a great potential of the focused ion beam (FIB) technology for the nanometer-scale patterning of a freestanding two-dimensional (2D) layer. Experimentally determined sputtering yields of the perforation process can be quantitatively explained using the binary collision theory. The main peculiarity of the interaction between the ion beams and the suspended 2D material lies in the absence of collision cascades, featured by no interaction volume. Thus, the patterning resolution is directly set by the beam diameters. Here, we demonstrate pattern resolution beyond the beam size and precise profiling of the focused ion beams. We find out that FIB exposure time of individual pixels can influence the resultant pore diameter. In return, the pore dimension as a function of the exposure dose brings out the ion beam profiles. Using this method of determining an ion-beam point spread function, we verify a Gaussian profile of focused gallium ion beams. Graphene sputtering yield is extracted from the normalization of the measured Gaussian profiles, given a total beam current. Interestingly, profiling of unbeknown helium ion beams in this way results in asymmetry of the profile. Even triangular beam shapes are observed at certain helium FIB conditions, possibly attributable to the trimer nature of the beam source. Our method of profiling ion beams with 2D-layer perforation provides more information on ion beam profiles than the conventional sharp-edge scan method does.
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Carbon-based nanomaterials such as graphene are at a crucial point in application development, and their promising potential, which has been demonstrated at the laboratory scale, must be translated to an industrial setting for commercialization. Graphene nanoribbons in particular overcome one limitation of graphene in some electronic applications because they exhibit a sizeable bandgap. However, synthesis of bottom-up graphene nanoribbons is most commonly performed under ultra-high vacuum conditions, which are costly and difficult to maintain in a manufacturing environment. Additionally, little is known about the stability of graphene nanoribbons under ambient conditions or during transfer to technologically relevant substrates and subsequent device processing. This work addresses some of these challenges, first by synthesizing bottom-up graphene nanoribbons under easily obtained high vacuum conditions and identifying water and oxygen as the residual gases responsible for interfering with proper coupling during the polymerization step. And second, by using Raman spectroscopy to probe the stability of nanoribbons during storage under ambient conditions, after transfer to arbitrary substrates, and after fabrication of field-effect transistor devices, which shows structurally intact nanoribbons even several months after synthesis. These findings demonstrate the potential of graphene nanoribbon technologies by addressing some limitations which might arise in their commercialization.
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Colloidal nanocrystals (NCs) of APbX3-type lead halide perovskites [A = Cs+, CH3NH3+ (methylammonium or MA+) or CH(NH2)2+ (formamidinium or FA+); X = Cl-, Br-, I-] have recently emerged as highly versatile photonic sources for applications ranging from simple photoluminescence down-conversion (e.g., for display backlighting) to light-emitting diodes. From the perspective of spectral coverage, a formidable challenge facing the use of these materials is how to obtain stable emissions in the red and infrared spectral regions covered by the iodide-based compositions. So far, red-emissive CsPbI3 NCs have been shown to suffer from a delayed phase transformation into a nonluminescent, wide-band-gap 1D polymorph, and MAPbI3 exhibits very limited chemical durability. In this work, we report a facile colloidal synthesis method for obtaining FAPbI3 and FA-doped CsPbI3 NCs that are uniform in size (10-15 nm) and nearly cubic in shape and exhibit drastically higher robustness than their MA- or Cs-only cousins with similar sizes and morphologies. Detailed structural analysis indicated that the FAPbI3 NCs had a cubic crystal structure, while the FA0.1Cs0.9PbI3 NCs had a 3D orthorhombic structure that was isostructural to the structure of CsPbBr3 NCs. Bright photoluminescence (PL) with high quantum yield (QY > 70%) spanning red (690 nm, FA0.1Cs0.9PbI3 NCs) and near-infrared (near-IR, ca. 780 nm, FAPbI3 NCs) regions was sustained for several months or more in both the colloidal state and in films. The peak PL wavelengths can be fine-tuned by using postsynthetic cation- and anion-exchange reactions. Amplified spontaneous emissions with low thresholds of 28 and 7.5 µJ cm-2 were obtained from the films deposited from FA0.1Cs0.9PbI3 and FAPbI3 NCs, respectively. Furthermore, light-emitting diodes with a high external quantum efficiency of 2.3% were obtained by using FAPbI3 NCs.
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We report experimentally and theoretically the behavior of freestanding graphene subjected to bombardment of energetic ions, investigating the capability of large-scale patterning of freestanding graphene with nanometer sized features by focused ion beam technology. A precise control over the He(+) and Ga(+) irradiation offered by focused ion beam techniques enables investigating the interaction of the energetic particles and graphene suspended with no support and allows determining sputter yields of the 2D lattice. We found a strong dependency of the 2D sputter yield on the species and kinetic energy of the incident ion beams. Freestanding graphene shows material semi-transparency to He(+) at high energies (10-30 keV) allowing the passage of >97% He(+) particles without creating destructive lattice vacancy. Large Ga(+) ions (5-30 keV), in contrast, collide far more often with the graphene lattice to impart a significantly higher sputter yield of â¼50%. Binary collision theory applied to monolayer and few-layer graphene can successfully elucidate this collision mechanism, in great agreement with experiments. Raman spectroscopy analysis corroborates the passage of a large fraction of He(+) ions across graphene without much damaging the lattice whereas several colliding ions create single vacancy defects. Physical understanding of the interaction between energetic particles and suspended graphene can practically lead to reproducible and efficient pattern generation of unprecedentedly small features on 2D materials by design, manifested by our perforation of sub-5 nm pore arrays. This capability of nanometer-scale precision patterning of freestanding 2D lattices shows the practical applicability of focused ion beam technology to 2D material processing for device fabrication and integration.
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Nanopores fabricated from glass microcapillaries are used in applications ranging from scanning ion conductance microscopy to single-molecule detection. Still, evaluating the nanocapillary tip by a noninvasive means remains challenging. For instance, electron microscopy characterization techniques can charge, heat, and contaminate the glass surface and typically require conductive coatings that influence the final tip geometry. Per contra, electrical characterization by the means of ion current through the capillary lumen provides only indirect geometrical details of the tips. Here, we show that helium scanning transmission ion microscopy provides a nondestructive and precise determination of glass nanocapillary tip geometries. This enables the reproducible fabrication of axially asymmetric blunt, bullet, and hourglass-shaped tips with opening diameters from 20 to 400 nm by laser-assisted pulling. Accordingly, this allows for an evaluation of how tip shape, pore diameter, and opening angle impact ionic current rectification behavior and the translocation of single molecules. Our analysis shows that current drops and translocation dwell times are dominated by the pore diameter and opening angles regardless of nanocapillary tip shape.
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The joining of macroscopic films of vertically aligned multiwalled carbon nanotubes (CNTs) to titanium substrates is demonstrated by active vacuum brazing at 820 °C with a Ag-Cu-Ti alloy and at 880 °C with a Cu-Sn-Ti-Zr alloy. The brazing methodology was elaborated in order to enable the production of highly electrically and thermally conductive CNT/metal substrate contacts. The interfacial electrical resistances of the joints were measured to be as low as 0.35 Ω. The improved interfacial transport properties in the brazed films lead to superior electron field-emission properties when compared to the as-grown films. An emission current of 150 µA was drawn from the brazed nanotubes at an applied electric field of 0.6 V µm-1. The improvement in electron field-emission is mainly attributed to the reduction of the contact resistance between the nanotubes and the substrate. The joints have high re-melting temperatures up to the solidus temperatures of the alloys; far greater than what is achievable with standard solders, thus expanding the application potential of CNT films to high-current and high-power applications where substantial frictional or resistive heating is expected.