Effect of an external/internal magnetic field on the photocurrent in Py-topological insulator heterojunction Ni80Fe20/TI (Bi2Te3/Bi2Se3/Bi2Te2Se)/p-Si devices.

This study demonstrates the fabrication and study of a permalloy (Py)/topological insulator heterojunction, i.e., the Ni80Fe20/TI(Bi2Te3/Bi2Se3/Bi2Te2Se)/p-Si heterojunction, for spintronic device applications at room temperature. In this work, the forward current values, under the absence of a magnetic field, for Ni80Fe20/Bi2Te2Se/p-Si, Ni80Fe20/Bi2Se3/p-Si, and Ni80Fe20/Bi2Te3/p-Si heterojunctions were 12.7 µA, 8.7 µA, and 6.85 µA, respectively; while in the presence of a magnetic field, the corresponding values were 10.8 µA, 7.6 µA, and 4.47 µA, respectively. Such reductions in current were attributed to an increase in the resistance of the p-n junction diode due to Lorentz force and a magnetoresistance effect, which was also verified using magneto-transport measurements. This resulted in a modification of the space charge shape and an increase in the potential barrier. Along with this, the magnetic field also affected the diffusion length, leading to a reduction in the current. Such a phenomenon enables the development of durable devices with improved reliability and longevity under harsh environments. The special features of topological edge states in the presence of a magnetic field can be used for sophisticated sensing applications. The future applications will likely lead to the emergence of other novel applications across disciplines such as computing, health, materials science, and energy harvesting.

Aberrant photoelectric effect in the topological insulator/n-GaN heterojunction (Bi2Te3/n-GaN) under unpolarized illumination.

A topological insulator has a unique graphene-like Dirac cone conducting surface state, which is excellent for broadband absorption and photodetector applications. Experimental investigations on the Bi2Te3/n-GaN heterojunction exhibited an aberrant photoelectric effect under the influence of unpolarized light. Transport measurements of the Bi2Te3/n-GaN heterojunction revealed a negative photoconductance, with a sudden increase in resistance. This was consistent with the applied range of wavelength and power used for incident light while it was contrary to the usual gap-state transition model, which states that a negative conductance is due to the trapping of charge carriers. The observed aberrant photoelectric effect seen in Bi2Te3/n-GaN heterojunction devices was due to the polycrystalline nature of the Bi2Te3 topological insulator film, where the incident photon-induced bandgap in the Dirac cone surface state resulted in a negative photoelectric effect. This phenomenon opens the possibility for applications in highly sensitive photodetectors and non-volatile memories, along with employing the bandgap-opening concept in retinomorphic devices.

Recent Advances in the Detection of Food Toxins Using Mass Spectrometry.

Edibles are the only source of nutrients and energy for humans. However, ingredients of edibles have undergone many physicochemical changes during preparation and storage. Aging, hydrolysis, oxidation, and rancidity are some of the major changes that not only change the native flavor, texture, and taste of food but also destroy the nutritive value and jeopardize public health. The major reasons for the production of harmful metabolites, chemicals, and toxins are poor processing, inappropriate storage, and microbial spoilage, which are lethal to consumers. In addition, the emergence of new pollutants has intensified the need for advanced and rapid food analysis techniques to detect such toxins. The issue with the detection of toxins in food samples is the nonvolatile nature and absence of detectable chromophores; hence, normal conventional techniques need additional derivatization. Mass spectrometry (MS) offers high sensitivity, selectivity, and capability to handle complex mixtures, making it an ideal analytical technique for the identification and quantification of food toxins. Recent technological advancements, such as high-resolution MS and tandem mass spectrometry (MS/MS), have significantly improved sensitivity, enabling the detection of food toxins at ultralow levels. Moreover, the emergence of ambient ionization techniques has facilitated rapid in situ analysis of samples with lower time and resources. Despite numerous advantages, the widespread adoption of MS in routine food safety monitoring faces certain challenges such as instrument cost, complexity, data analysis, and standardization of methods. Nevertheless, the continuous advancements in MS-technology and its integration with complementary techniques hold promising prospects for revolutionizing food safety monitoring. This review discusses the application of MS in detecting various food toxins including mycotoxins, marine biotoxins, and plant-derived toxins. It also explores the implementation of untargeted approaches, such as metabolomics and proteomics, for the discovery of novel and emerging food toxins, enhancing our understanding of potential hazards in the food supply chain.

Proximity induced band gap opening in topological-magnetic heterostructure (Ni80Fe20/p-TlBiSe2/p-Si) under ambient condition.

The broken time reversal symmetry states may result in the opening of a band gap in TlBiSe2 leading to several interesting phenomena which are potentially relevant for spintronic applications. In this work, the quantum interference and magnetic proximity effects have been studied in Ni80Fe20/p-TlBiSe2/p-Si (Magnetic/TI) heterostructure using physical vapor deposition technique. Raman analysis shows the symmetry breaking with the appearance of A21u mode. The electrical characteristics are investigated under dark and illumination conditions in the absence as well as in the presence of a magnetic field. The outcomes of the examined device reveal excellent photo response in both forward and reverse bias regions. Interestingly, under a magnetic field, the device shows a reduction in electrical conductivity at ambient conditions due to the crossover of weak localization and separation of weak antilocalization, which are experimentally confirmed by magnetoresistance measurement. Further, the photo response has also been assessed by the transient absorption spectroscopy through analysis of charge transfer and carrier relaxation mechanisms. Our results can be beneficial for quantum computation and further study of topological insulator/ferromagnet heterostructure and topological material based spintronic devices due to high spin orbit coupling along with dissipationless conduction channels at the surface states.

Bi2Te2Se and Sb2Te3 heterostructure based photodetectors with high responsivity and broadband photoresponse: experimental and theoretical analysis.

Topological insulators have emerged as one of the most promising candidates for the fabrication of novel electronic and optoelectronic devices due to the unique properties of nontrivial Dirac cones on the surface and a narrow bandgap in the bulk. In this work, the Sb2Te3 and Bi2Te2Se materials, and their heterostructure are fabricated by metal-organic chemical vapour deposition and evaporation techniques. Photodetection of these materials and their heterostructure shows that they detect light in a broadband range of 600 to 1100 nm with maximum photoresponse of Sb2Te3, Bi2Te2Se and Sb2Te3/Bi2Te2Se at 1100, 1000, and 1000 nm, respectively. The maximum responsivity values of Sb2Te3, Bi2Te2Se, and their heterostructure are 183, 341.8, and 245.9 A W-1 at 1000 nm, respectively. A computational study has also been done using density functional theory (DFT). Using the first-principles methods based on DFT, we have systematically investigated these topological insulators and their heterostructure's electronic and optical properties. The band structures of Sb2Te3 and Bi2Te2Se thin films (3 QL) and their heterostructure are calculated. The bandgaps of Sb2Te3 and Bi2Te2Se are 26.4 and 23 meV, respectively, while the Sb2Te3/Bi2Te2Se heterostructure shows metallic behaviour. For the optical properties, the dielectric function's real and imaginary parts are calculated using DFT and random phase approximation (RPA). It is observed that these topological materials and their heterostructure are light absorbers in a broadband range, with maximum absorption at 1.90, 2.40, and 3.21 eV.

Microbial and immune factors regulate brain maintenance and aging.

Tissue aging can be viewed as a loss of normal maintenance; in advanced age, the mechanisms which keep the tissue healthy on daily bases fail to manage the accumulating "wear and tear", leading to gradual loss of function. In the brain, maintenance is provided primarily by three components: the blood-brain barrier, which allows the influx of certain molecules into the brain while excluding others, the circulation of the cerebrospinal fluid, and the phagocytic function of microglia. Indeed, failure of these systems is associated with cognitive loss and other hallmarks of brain aging. Interestingly, all three mechanisms are regulated not only by internal conditions within the aging brain, but remain highly sensitive to the peripheral signals, such as cytokines or microbiome-derived molecules, present in the systemic circulation. In this article, we discuss the contribution of such peripheral factors to brain maintenance and its loss in aging.

A novel red-emitting phosphor, KAl1-xPO4Cl:Eux(3+) (0.1 ≤ x ≤ 1.0).

A series of phosphors KAl1-xPO4Cl:Eux(3+) (0.1 ≤ x ≤ 1.0) was synthesized using a facile combustion method using urea as a fuel and their structural, morphological and photoluminescence properties were investigated. It was found that the particle size was in the range of 1-2 µm with an irregular shape. The f-f transitions of Eu(3+) in the host lattice were assigned and discussed. The excitation and emission spectra indicated that this phosphor can be efficiently excited by ultraviolet (395 nm), and exhibit reddish orange emission corresponding to the (5)D0 →(7)FJ (J = 0, 1, 2) transitions of Eu(3+). The impact of the Eu(3+) concentration on the relative emission intensity was investigated, and the best doping concentration is 0.5. The present study suggests that the KAl0.5PO4Cl:Eu0.5(3+) phosphor is a strong candidate as a red component for phosphor- converted white light-emitting diodes (LEDs).

Photoluminescence property of A9B(VO4)7 [A = Ca, Sr, Ba and B = La, Gd] phosphors.

A new efficient phosphor, A9B(VO4)7 [A = Ca, Sr, Ba and B = La, Gd] has been synthesized by the solid-state method at high temperature. X-ray diffraction analysis confirmed the formation of the compound. Photoluminescence excitation measurements show that the phosphor can be efficiently excited by near-ultraviolet light from 300 nm to 400 nm to realize emission covering the 397-647 nm region of visible spectrum. Therefore, newly synthesized novel phosphor may be useful as green-emitting phosphor in solid-state lighting.

Dy3+-activated NaM4(VO4)3 (M = Ca, Ba, Sr) phosphor for near-UV solid-state lighting.

We report the photoluminescence characterization of Dy(3+)-activated NaM(4)(VO(4))(3) (M = Ca, Ba, Sr) phosphors prepared by a solid-state method. The synthesis was confirmed by X-ray diffraction (XRD) characterization and photoluminescence (PL) emission results showed sharp blue and yellow bands for NaM(4)(VO(4))(3) (M = Ca, Ba, Sr):Dy(3+) phosphors at the excitation wavelength of 323 nm, which is near-UV excitation. Thus, these phosphors could be applicable for near-UV excited solid-state lighting devices.