The impact of arbuscular mycorrhizal fungi and endophytic bacteria on peanuts under the combined pollution of cadmium and microplastics.

It remains unclear how symbiotic microbes impact the growth of peanuts when they are exposed to the pollutants cadmium (Cd) and microplastics (MPs) simultaneously. This study aimed to investigate the effects of endophytic bacteria Bacillus velezens SC60 and arbuscular mycorrhizal fungus Rhizophagus irregularis on peanut growth and rhizosphere microbial communities in the presence of Cd at 40 (Cd40) or 80 (Cd80) mg kg-1 combined without MP or the presence of low-density polyethylene (LDPE) and poly butyleneadipate-co-terephthalate (PBAT). This study assessed soil indicators, plant parameters, and Cd accumulation indicators. Results showed that the application of R. irregularis and B. velezens significantly enhanced soil organic carbon and increased Cd content under the conditions of Cd80 and MPs co-pollution. R. irregularis and B. velezens treatment increased peanut absorption and the enrichment coefficient for Cd, with predominate concentrations localized in the peanut roots, especially under combined pollution by Cd and MPs. Under treatments with Cd40 and Cd80 combined with PBAT pollution, soil microbes Proteobacteria exhibited a higher relative abundance, while Actinobacteria showed a higher relative abundance under treatments with Cd40 and Cd80 combined with LDPE pollution. In conclusion, under the combined pollution conditions of MPs and Cd, the co-treatment of R. irregularis and B. velezens effectively immobilized Cd in peanut roots, impeding its translocation to the shoot.

A ZnO/porous GaN heterojunction and its application as a humidity sensor.

A heterojunction of ZnO/porous GaN (ZnO/PGAN) was fabricated and directly applied to a diode-type humidity sensor. ZnO disks were loaded onto PGAN using a spraying process. The structure and surface morphology of the ZnO/PGAN were characterized using X-ray diffraction and scanning electron microscopy. The heterojunction displayed an excellent diode nature, which was investigated using photoluminescence spectra and I-V characteristics. The excellent transport capability of ZnO/PGAN contributes to enhanced electron transfer, and hence results in high sensitivity and quick response/recovery properties under different relative humidity (RH) levels. In the range of 12-96% RH, a fast sensing response time as low as 7 s and a recovery time of 13 s can be achieved. The simple design of a ZnO/PGAN based humidity sensor highlights its potential in various applications.