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1.
Inorg Chem ; 60(17): 12781-12789, 2021 Sep 06.
Artigo em Inglês | MEDLINE | ID: mdl-34492767

RESUMO

The aim of this study was to investigate the thermoelectric properties of hot-pressed Ba3Cu14-δTe12 as well as its stability with regards to Cu ion movement. For the latter, two single crystals were picked from pellets after they were measured up to 573 and 673 K, which showed no significant changes in the occupancies of any of the Cu sites. All investigated Ba3Cu14-δTe12 materials displayed low thermal conductivity values (<1 W m-1 K-1) and appropriate electrical conductivity values (300-600 Ω-1 cm-1). However, the thermopower values were comparably low (<+65 µV K-1), resulting in uncompetitive zT values, with the highest being achieved for Ba3Cu13.175Te12, namely zT = 0.12 at 570 K. In an attempt to decrease the thermal conductivity, and thereby enhance the figure of merit, a brief alloying study with Ag was undertaken. The incorporation of Ag, however, did not produce any significant improvements.

2.
Dalton Trans ; 50(19): 6561-6567, 2021 May 18.
Artigo em Inglês | MEDLINE | ID: mdl-33890955

RESUMO

High-performance thermoelectric materials are currently being sought after to recycle waste heat. Copper chalcogenides in general are materials of great interest because of their naturally low thermal conductivity and readily modifiable electronic properties. The compounds Cu5Sn2Q7 were previously reported to have metal-like properties, which is not a desirable characteristic for thermoelectric materials. The aim of this study was to reduce the carrier concentration of these materials by Zn-doping, and then investigate the electronic and thermoelectric properties of the doped materials in comparison to the undoped ones. The compounds were synthesized using both the traditional solid-state tube method and ball-milling. The crystal structures were characterized using powder X-ray diffraction, which confirmed that all materials crystallize in the monoclinic system with the space group C2. With the partial substitution of zinc for copper atoms, the compounds exhibited an overall improvement in their thermoelectric properties. Figure of merit values were determined to be 0.20 for Cu4ZnSn2Se7 at 615 K and 0.05 for Cu4ZnSn2Te7 at 575 K.

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