Controlling the spacing of the linked graphene oxide system with dithiol linkers under confinement.

2D nanoscale confined systems exhibit behavior that is markedly different from that observed at the macroscale. Confinement can be tuned by controlling the interlayer spacing between confining layers using organic dithiol linkers. Adjusting spacing and selective intercalation have important impacts for catalysis, superconductivity, spin engineering, sodium ion batteries, 2D magnets, optoelectronics, and many other applications. In this study, we report how reaction conditions and organic linkers can be used to create variable, reproducible spacings between graphene oxide to provide confinement systems. We determined the conditions under which the spacing can be variably adjusted by the type of linker used, the concentration of the linker, and the reaction conditions. Employing dithiol linkers of different lengths, such as three (TPDT) and four (QPDT) aromatic rings, we can adjust the spacing between graphene oxide layers under varied reaction conditions. Here, we show that by varying dithiol linker length and using different reaction conditions, we can reproducibly control the spacing between graphene oxide layers from 0.37 nm to over 0.50 nm.

Semiconductor-to-conductor transition in 2D copper(ii) oxide nanosheets through surface sulfur-functionalization.

Functionalization is a widely-used strategy to modulate and optimize the properties of materials towards various applications, including sensing, catalysis, and energy generation. While the influence of sulfur-functionalization of carbon materials and oxides like ZnO and TiO2 has been studied, far less research has been devoted to analyzing sulfur-functionalization of CuO and other transition metal oxide nanomaterials. Here, we report sulfur-functionalization of copper(ii) oxide nanosheets synthesized by using a soft-templating procedure, with sulfur-addition based on hydrogen sulfide gas as a source. The resulting sulfur-functionalization does not change the overall crystal structure and morphology of the CuO nanosheets, but leads to a decrease in surface hydroxyl groups. Sulfur induces a semiconductor-to-conductor state transition of the CuO nanosheets, which is supported by computational modeling. The metallic transition results from shifting of the Fermi level into the valence band due to formation of Cu-S bonds on the surface of the CuO nanosheets.