From graphene to graphene oxide: the importance of extended topological defects.

Graphene oxide (GO) represents a complex family of materials related to graphene: easy to produce in large quantities, easy to process, and convenient to use as a basis for further functionalization, with the potential for wide-ranging applications such as in nanocomposites, electronic inks, biosensors and more. Despite their importance, the key structural traits of GO, and the impact of these traits on properties, are still poorly understood due to the inherently berthollide character of GO which complicates the establishment of clear structure/property relationships. Widely accepted structural models of GO frequently neglect the presence of extended topological defects, structural changes to the graphene basal plane that are not removed by reduction methods. Here, a combination of experimental approaches and molecular simulations demonstrate that extended topological defects are a common feature across GO and that the presence of these defects strongly influences the properties of GO. We show that these extended topological defects are produced following even controlled 'gentle' functionalization by atomic oxygen and are comparable to those obtained by a conventional modified Hummers' method. The presence of the extended topological defects is shown to play an important role in the retention of oxygen functional groups after reduction. As an exemplar of their effect on the physical properties, we show that the GO sheets display a dramatic decrease in strength and stiffness relative to graphene and, due to the presence of extended structural defects, no improvement is seen in the mechanical properties after reduction. These findings indicate the importance of extended topological defects to the structure and properties of functionalized graphene, which merits their inclusion as a key trait in simple structural models of GO.

Covalently Binding Atomically Designed Au9 Clusters to Chemically Modified Graphene.

Atomic-resolution transmission electron microscopy was used to identify individual Au9 clusters on a sulfur-functionalized graphene surface. The clusters were preformed in solution and covalently attached to the surface without any dispersion or aggregation. Comparison of the experimental images with simulations allowed the rotational motion, without lateral displacement, of individual clusters to be discerned, thereby demonstrating a robust covalent attachment of intact clusters to the graphene surface.

One-step grafting of polymers to graphene oxide.

The direct grafting of poly(N-isopropylacrylamide) to the basal plane of graphene oxide has been achieved in a single step: cleavage of the terminal thiocarbonylthio group on RAFT grown poly(N-isopropylacrylamide) reveals a reactive thiol that attacks the epoxides present across the surface of graphene oxide. The new composite material was characterised by a combination of SSNMR, FTIR, Raman, EDX, XPS, TGA and contact angle measurement; it shows enhanced thermal stability and solubility in water.

Sulfur-functionalized graphene oxide by epoxide ring-opening.

The treatment of graphene oxide (GO) with potassium thioacetate followed by an aqueous work-up yields a new material via the ring-opening of the epoxide groups. The new material is a thiol-functionalized GO (GO-SH) which is able to undergo further functionalization. Reaction with butyl bromide gives another new material, GO-SBu, which shows significantly enhanced thermal stability compared to both GO and GO-SH. The thiol-functionalized GO material showed a high affinity for gold, as demonstrated by the selective deposition of a high density of gold nanoparticles.

Concerted reductive coupling of an alkyl chloride at Pt(IV).

Oxidation of a doubly cyclometallated platinum(II) complex results in two isomeric platinum(IV) complexes. Whereas the trans isomer is robust, being manipulable in air at room temperature, the cis isomer decomposes at -20 °C and above. Reductive coupling of an alkyl chloride at the cis isomer gives a new species which can be reoxidised. The independence of this coupling on additional halide rules out the reverse of an S(N)2 reaction, leaving a concerted process as the only sensible reaction pathway.