Size-Dependent Isovalent Impurity Doping for Ambipolar Control in Cu3N.

Substitutional doping, involving the replacement of a host with an aliovalent impurity ion, is widely used to attain ambipolar controllability in semiconductors, which is crucial for device application. However, its effectiveness for p-type doping is limited in monovalent cation compounds due to the lack of suitable aliovalent (i.e., zerovalent) impurities. We propose an alternative approach for p- and n-type doping, mediated by the sizes of isovalent alkali metal impurities in Cu(I)-based semiconductors, such as copper nitride with an electron concentration of ∼1015 cm-3. Doping of isovalent Li with a smaller size to interstitial positions improves n-type conductivity, and electron concentration is controllable in the range of 1015 to 1018 cm-3. In contrast, larger isovalent Cs and Rb impurities facilitate p-type conversion, resulting in a hole concentration controllability of 1014 to 1017 cm-3. First-principles calculations indicate that Li is placed as an interstitial impurity acting as a shallow donor in conjunction with the formation of a neutral impurity on Cu defects. As the impurity size increases beyond the capacity of the vacant space, the formation of multiple acceptor-type Cu vacancies is enhanced owing to the repulsion between host Cu+ and Cs+/Rb+ impurities. Consequently, the Cs or Rb impurity is located at the sites of the N accompanied by six neighboring Cu vacancies, forming acceptor defect complexes. This size-dependent isovalent impurity doping scheme opens up an alternative avenue for advancement in optoelectronic devices using monovalent cation-based semiconductors.

Emergence of Dynamically-Disordered Phases During Fast Oxygen Deintercalation Reaction of Layered Perovskite.

Determination of a reaction pathway is an important issue for the optimization of reactions. However, reactions in solid-state compounds have remained poorly understood because of their complexity and technical limitations. Here, using state-of-the-art high-speed time-resolved synchrotron X-ray techniques, the topochemical solid-gas reduction mechanisms in layered perovskite Sr3 Fe2 O7- δ (from δ ∼ 0.4 to δ = 1.0), which is promising for an environmental catalyst material is revealed. Pristine Sr3 Fe2 O7- δ shows a gradual single-phase structural evolution during reduction, indicating that the reaction continuously proceeds through thermodynamically stable phases. In contrast, a nonequilibrium dynamically-disordered phase emerges a few seconds before a first-order transition during the reduction of a Pd-loaded sample. This drastic change in the reaction pathway can be explained by a change in the rate-determining step. The synchrotron X-ray technique can be applied to various solid-gas reactions and provides an opportunity for gaining a better understanding and optimizing reactions in solid-state compounds.

Hole-Doping to a Cu(I)-Based Semiconductor with an Isovalent Cation: Utilizing a Complex Defect as a Shallow Acceptor.

p-Type doping in Cu(I)-based semiconductors is pivotal for solar cell photoabsorbers and hole transport materials to improve the device performance. Impurity doping is a fundamental technology to overcome the intrinsic limits of hole concentration controlled by native defects. Here, we report that alkali metal impurities are prominent p-type dopants for the Cu(I)-based cation-deficient hole conductors. When the size mismatch with Cu+ in the host lattice is increased, these isovalent impurities are preferentially located at interstitial positions to interact with the constituent Cu cations, forming stable impurity-defect complexes. We demonstrate that the Cs impurity in γ-CuI semiconductors enhances hole concentration controllability for single crystals and thin films in the range of 1013-1019 cm-3. First-principles calculations indicate that the Cs impurity forms impurity-defect complexes that act as shallow acceptors leading to the increased p-type conductivity. This isovalent doping provides an approach for controlled doping into cation-deficient semiconductors through an interaction of impurities with native defects.

Tuning the optical band gap and electrical properties of NiO thin films by nitrogen doping: a joint experimental and theoretical study.

A joint experimental and theoretical study is presented to reveal the influence of nitrogen doping on the optical and electrical properties of NiO thin films. Nitrogen addition can significantly enhance the subgap absorption. The molecular state of nitrogen (N2) has been identified in these doped thin films by electron energy loss spectroscopy.

Spin-Glass Magnetic Properties of A-Site Columnar-Ordered Quadruple Perovskites Y2MnGa(Mn4-xGax)O12 with 0 ≤ x ≤ 3.

Y2MnGa(Mn4-xGax)O12 solid solutions were synthesized at high pressure of ∼6 GPa and high temperature of ∼1570 K for the 0 ≤ x ≤ 3 compositional range. Synchrotron X-ray and neutron powder diffraction were used to study the crystal structures and cation distributions. These solutions adopt the parent structure of the A-site columnar-ordered quadruple perovskite family with space group P42/nmc (No. 137). They have lattice parameters of a = 7.36095 Å and c = 7.753 84 Å (x = 0), a = 7.361 68 Å and c = 7.716 16 Å (x = 1), a = 7.360 34 Å and c = 7.67142 Å (x = 2), and a = 7.363 93 Å and c = 7.616 85 Å (x = 3) at room temperature. The x = 0 sample has a cation distribution of [Y3+2]A[Mn3+]A'[Ga3+0.68Mn2+0.32]A″[Mn3.68Ga0.32]BO12 with a preferred localization of Ga3+ in the tetrahedral A″ site and with a small amount of Ga3+ in the octahedral B site. A complete triple A-site order, [Y3+2]A[Mn3+]A'[Ga3+]A″[Mn3+4-xGa3+x]BO12, is realized for x ≥ 1. All samples demonstrate spin-glass-like magnetic properties, and the absence of a long-range magnetic order at the ground state at 1.5 K was confirmed by neutron diffraction for the x = 1 sample. First-principles calculations indicated the spin-glass-like magnetic ordering is derived from the Ga substitution to the B sites and gave evidence that the ideal cation distribution could produce robust ferromagnetism in this family of perovskites.

Effect of MnO2 Crystal Structure on Aerobic Oxidation of 5-Hydroxymethylfurfural to 2,5-Furandicarboxylic Acid.

Aerobic oxidation of 5-hydroxymethylfurfural (HMF) to 2,5-furandicarboxylic acid (FDCA) as a bioplastics monomer is efficiently promoted by a simple system based on a nonprecious-metal catalyst of MnO2 and NaHCO3. Kinetic studies indicate that the oxidation of 5-formyl-2-furancarboxylic acid (FFCA) to FDCA is the slowest step for the aerobic oxidation of HMF to FDCA over activated MnO2. We demonstrate through combined computational and experimental studies that HMF oxidation to FDCA is largely dependent on the MnO2 crystal structure. Density functional theory (DFT) calculations reveal that vacancy formation energies at the planar oxygen sites in α- and γ-MnO2 are higher than those at the bent oxygen sites. ß- and λ-MnO2 consist of only planar and bent oxygen sites, respectively, with lower vacancy formation energies. Consequently, ß- and λ-MnO2 are likely to be good candidates as oxidation catalysts. On the other hand, experimental studies reveal that the reaction rates per surface area for the slowest step (FFCA oxidation to FDCA) decrease in the order of ß-MnO2 > λ-MnO2 > γ-MnO2 ≈ α-MnO2 > δ-MnO2 > ε-MnO2; the catalytic activity of ß-MnO2 exceeds that of the previously reported activated MnO2 by three times. The order is in good agreement not only with the DFT calculation results, but also with the reduction rates per surface area determined by the H2-temperature-programmed reduction measurements for MnO2 catalysts. The successful synthesis of high-surface-area ß-MnO2 significantly improves the catalytic activity for the aerobic oxidation of HMF to FDCA.