Antiferromagnetic textures in BiFeO3 controlled by strain and electric field.

Antiferromagnetic thin films are currently generating considerable excitement for low dissipation magnonics and spintronics. However, while tuneable antiferromagnetic textures form the backbone of functional devices, they are virtually unknown at the submicron scale. Here we image a wide variety of antiferromagnetic spin textures in multiferroic BiFeO3 thin films that can be tuned by strain and manipulated by electric fields through room-temperature magnetoelectric coupling. Using piezoresponse force microscopy and scanning NV magnetometry in self-organized ferroelectric patterns of BiFeO3, we reveal how strain stabilizes different types of non-collinear antiferromagnetic states (bulk-like and exotic spin cycloids) as well as collinear antiferromagnetic textures. Beyond these local-scale observations, resonant elastic X-ray scattering confirms the existence of both types of spin cycloids. Finally, we show that electric-field control of the ferroelectric landscape induces transitions either between collinear and non-collinear states or between different cycloids, offering perspectives for the design of reconfigurable antiferromagnetic spin textures on demand.

Author Correction: Electric and antiferromagnetic chiral textures at multiferroic domain walls.

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

Electric and antiferromagnetic chiral textures at multiferroic domain walls.

Chirality, a foundational concept throughout science, may arise at ferromagnetic domain walls1 and in related objects such as skyrmions2. However, chiral textures should also exist in other types of ferroic materials, such as antiferromagnets, for which theory predicts that they should move faster for lower power3, and ferroelectrics, where they should be extremely small and possess unusual topologies4,5. Here, we report the concomitant observation of antiferromagnetic and electric chiral textures at domain walls in the room-temperature ferroelectric antiferromagnet BiFeO3. Combining reciprocal and real-space characterization techniques, we reveal the presence of periodic chiral antiferromagnetic objects along the domain walls as well as a priori energetically unfavourable chiral ferroelectric domain walls. We discuss the mechanisms underlying their formation and their relevance for electrically controlled topological oxide electronics and spintronics.

Giant rectified voltages from magnetization dynamics of an atomically sharp domain wall.

Magnetization dynamics is of great interest in the aim of using spins in nanoscale information technology, which ultimately should reach the atomic size. In the present work, we explore magnetization and spin dynamics in atomic ferromagnetic contacts both experimentally and theoretically. We demonstrate that domain walls induce a giant rectification effect as the DC voltages measured across the contacts are greatly enhanced by the presence of a domain wall. This effect is understood using multiscale dynamic simulations showing that the atomic sized walls oscillate, both in position and size, when submitted to the radio-frequency excitation. This leads to an increase by three orders of magnitude due to the large atomic scale spin excursion at resonance in the presence of an atomic sized domain wall. Beside the interesting amplified rectification, this could also be used as a unique tool to measure dynamical properties at the atomic scale.

Real-space imaging of non-collinear antiferromagnetic order with a single-spin magnetometer.

Although ferromagnets have many applications, their large magnetization and the resulting energy cost for switching magnetic moments bring into question their suitability for reliable low-power spintronic devices. Non-collinear antiferromagnetic systems do not suffer from this problem, and often have extra functionalities: non-collinear spin order may break space-inversion symmetry and thus allow electric-field control of magnetism, or may produce emergent spin-orbit effects that enable efficient spin-charge interconversion. To harness these traits for next-generation spintronics, the nanoscale control and imaging capabilities that are now routine for ferromagnets must be developed for antiferromagnetic systems. Here, using a non-invasive, scanning single-spin magnetometer based on a nitrogen-vacancy defect in diamond, we demonstrate real-space visualization of non-collinear antiferromagnetic order in a magnetic thin film at room temperature. We image the spin cycloid of a multiferroic bismuth ferrite (BiFeO3) thin film and extract a period of about 70 nanometres, consistent with values determined by macroscopic diffraction. In addition, we take advantage of the magnetoelectric coupling present in BiFeO3 to manipulate the cycloid propagation direction by an electric field. Besides highlighting the potential of nitrogen-vacancy magnetometry for imaging complex antiferromagnetic orders at the nanoscale, these results demonstrate how BiFeO3 can be used in the design of reconfigurable nanoscale spin textures.

Multi-stimuli manipulation of antiferromagnetic domains assessed by second-harmonic imaging.

Among the variety of magnetic textures available in nature, antiferromagnetism is one of the most 'discrete' because of the exact cancellation of its staggered internal magnetization. It is therefore very challenging to probe. However, its insensitivity to external magnetic perturbations, together with the intrinsic sub-picosecond dynamics, make it very appealing for tomorrow's information technologies. Thus, it is essential to understand the microscopic mechanisms governing antiferromagnetic domains to achieve accurate manipulation and control. Using optical second-harmonic generation, a unique and laboratory-available tool, we succeeded in imaging with sub-micrometre resolution both electric and antiferromagnetic orders in the model multiferroic BiFeO3. We show here that antiferromagnetic domains can be manipulated with low power consumption, using sub-coercive electric fields and sub-picosecond light pulses. Interestingly, we also show that antiferromagnetic and ferroelectric domains can behave independently, thus revealing that magneto-electric coupling can lead to various arrangements of the two orders.

Optical Writing of Magnetic Properties by Remanent Photostriction.

We present an optically induced remanent photostriction in BiFeO_{3}, resulting from the photovoltaic effect, which is used to modify the ferromagnetism of Ni film in a hybrid BiFeO_{3}/Ni structure. The 75% change in coercivity in the Ni film is achieved via optical and nonvolatile control. This photoferromagnetic effect can be reversed by static or ac electric depolarization of BiFeO_{3}. Hence, the strain dependent changes in magnetic properties are written optically, and erased electrically. Light-mediated straintronics is therefore a possible approach for low-power multistate control of magnetic elements relevant for memory and spintronic applications.

Interlayer coupling through a dimensionality-induced magnetic state.

Dimensionality is known to play an important role in many compounds for which ultrathin layers can behave very differently from the bulk. This is especially true for the paramagnetic metal LaNiO3, which can become insulating and magnetic when only a few monolayers thick. We show here that an induced antiferromagnetic order can be stabilized in the [111] direction by interfacial coupling to the insulating ferromagnet LaMnO3, and used to generate interlayer magnetic coupling of a nature that depends on the exact number of LaNiO3 monolayers. For 7-monolayer-thick LaNiO3/LaMnO3 superlattices, negative and positive exchange bias, as well as antiferromagnetic interlayer coupling are observed in different temperature windows. All three behaviours are explained based on the emergence of a (»,»,»)-wavevector antiferromagnetic structure in LaNiO3 and the presence of interface asymmetry with LaMnO3. This dimensionality-induced magnetic order can be used to tailor a broad range of magnetic properties in well-designed superlattice-based devices.

Interfacial Control of Magnetic Properties at LaMnO3/LaNiO3 Interfaces.

The functional properties of oxide heterostructures ultimately rely on how the electronic and structural mismatches occurring at interfaces are accommodated by the chosen materials combination. We discuss here LaMnO3/LaNiO3 heterostructures, which display an intrinsic interface structural asymmetry depending on the growth sequence. Using a variety of synchrotron-based techniques, we show that the degree of intermixing at the monolayer scale allows interface-driven properties such as charge transfer and the induced magnetic moment in the nickelate layer to be controlled. Further, our results demonstrate that the magnetic state of strained LaMnO3 thin films dramatically depends on interface reconstructions.

Full control of the spin-wave damping in a magnetic insulator using spin-orbit torque.

It is demonstrated that the threshold current for damping compensation can be reached in a 5 µm diameter YIG(20 nm)|Pt(7 nm) disk. The demonstration rests upon the measurement of the ferromagnetic resonance linewidth as a function of I(dc) using a magnetic resonance force microscope (MRFM). It is shown that the magnetic losses of spin-wave modes existing in the magnetic insulator can be reduced or enhanced by at least a factor of 5 depending on the polarity and intensity of an in-plane dc current I(dc) flowing through the adjacent normal metal with strong spin-orbit interaction. Complete compensation of the damping of the fundamental mode by spin-orbit torque is reached for a current density of ∼3×10(11) A·m(-2), in agreement with theoretical predictions. At this critical threshold the MRFM detects a small change of static magnetization, a behavior consistent with the onset of an auto-oscillation regime.

Revisiting galvanomagnetic effects in conducting ferromagnets.

The recently proposed coupling between the angular momentum density and magnetic moments is shown to provide a straightforward alternative explanation for galvanomagnetic effects, i.e. for both anisotropic magnetoresistance (AMR) and planar Hall effect (PHE). Such coupling naturally reproduces the general formula associated with AMR and PHE and allows for the occurrence of so-called 'negative AMR'. This coupling also provides a unifying link between AMR, PHE and the anomalous Hall effect (AHE) since this same coupling was previously found to give rise to AHE (Bellaiche et al 2013 Phys. Rev. B 88 161102).

Prediction of novel interface-driven spintronic effects.

The recently proposed coupling between the angular momentum density and magnetic moment (Raeliarijaona et al 2013 Phys. Rev. Lett. 110 137205) is shown here to result in the prediction of (i) novel spin currents generated by an electrical current and (ii) new electrical currents induced by a spin current in systems possessing specific interfaces between two different materials. Some of these spin (electrical) currents can be reversed near the interface by reversing the applied electrical (spin) current. Similarities and differences between these novel spintronic effects and the well-known spin Hall and inverse spin Hall effects are also discussed.

Detection of microwave spin pumping using the inverse spin Hall effect.

We report on the electrical detection of the dynamical part of the spin-pumping current emitted during ferromagnetic resonance using inverse spin Hall effect methods. The experiment is performed on a YIG|Pt bilayer. The choice of yttrium iron garnet (YIG), a magnetic insulator, ensures that no charge current flows between the two layers and only the pure spin current produced by the magnetization dynamics is transferred into the adjacent strong spin-orbit Pt layer via spin pumping. To avoid measuring the parasitic eddy currents induced at the frequency of the microwave source, a resonance at half the frequency is induced using parametric excitation in the parallel geometry. Triggering this nonlinear effect allows us to directly detect on a spectrum analyzer the microwave component of the inverse spin Hall effect voltage. Signals as large as 30 µV are measured for precession angles of a couple of degrees. This direct detection provides a novel efficient means to study magnetization dynamics on a very wide frequency range with great sensitivity.

Large RF susceptibility of transverse domain walls.

Changes in domain wall resistance under radio-frequency (RF) irradiation are experimentally studied for transverse walls. An original experimental technique is applied to the measurement in a permalloy nano-stripe with a notch, where the walls are found to provide a largely enhanced resistive response as compared to saturated domains. Their susceptibility is found to be an order of magnitude larger than that of the domains in a frequency range between 5 and 20 GHz. We argue that the RF fields induce an internal distortion of the magnetization profile that depends on the shape of the domain wall.

Light-induced size changes in BiFeO3 crystals.

Multifunctional oxides are promising materials because of their fundamental physical properties as well as their potential in applications. Among these materials, multiferroics exhibiting ferroelectricity and magnetism are good candidates for spin electronic applications using the magnetoelectric effect, which couples magnetism and ferroelectricity. Furthermore, because ferroelectrics are insulators with a reasonable bandgap, photons can efficiently interact with electrons leading to photoconduction or photovoltaic effects. However, until now, coupling of light with mechanical degrees of freedom has been elusive, although ferroelasticity is a well-known property of these materials. Here, we report on the observation, for the first time, of a substantial visible-light-induced change in the dimensions of BiFeO(3) crystals at room temperature. The relative light-induced photostrictive effect is of the order of 10(-5) with response times below 0.1 s. It depends on the polarization of incident light as well as applied magnetic fields. This opens the perspective of combining mechanical, magnetic, electric and optical functionalities in future generations of remote switchable devices.

Electric field switching of the magnetic anisotropy of a ferromagnetic layer exchange coupled to the multiferroic compound BiFeO3.

We report here that a Permalloy layer deposited on top of a multiferroic BiFeO3 single crystal acquires an easy magnetic direction along the propagation vector of the cycloidal arrangement of antiferromagnetic moments in BiFeO3. This anisotropy originates from a direct magnetic coupling with the canted spins forming the cycloid. Moreover, we show that an electric field-induced change of electric polarization is able to toggle the direction of anisotropy in the ferromagnet through the magnetoelectric effect, which links the antiferromagnetic spins to the local polarization in BiFeO3.

Electric-field-induced spin flop in BiFeO3 single crystals at room temperature.

Bismuth ferrite, BiFeO3, is the only known room-temperature magnetic ferroelectric material. We demonstrate here, using neutron scattering measurements in high quality single crystals, that the antiferromagnetic and ferroelectric order parameters are intimately coupled. Initially in a single ferroelectric state, our crystals have a canted antiferromagnetic structure describing a unique cycloid. Under electrical poling, polarization reorientation induces a spin flop. We argue here that the coupling between the two orders may be stronger in the bulk than in thin films where the cycloid is absent.

Magnetic filaments in resistive manganites.

The magnetic phase separation in single crystals of the Pr0.67Ca0.33MnO3 manganites is studied using polarized small angle neutron scattering. The measured spectra give a fractal dimension consistent with a configuration in ferromagnetic filaments of nanometric diameter. We argue here that localized charge carriers hop in a random walk fashion mediating a ferromagnetic "hopping exchange" which coexists with superexchange to create the filamentary phase separation. The arguments for this physical picture are validated by Monte Carlo simulations, where magnetism and transport are treated in a self-consistent manner.

Individual domain wall resistance in submicron ferromagnetic structures.

The resistance generated by individual domain walls is measured in a FePd nanostructure. Combining transport and magnetic imaging measurements, the intrinsic domain wall resistance is quantified. It is found positive and of a magnitude consistent with that predicted by models based on spin scattering effects within the walls. This magnetoresistance at a nanometer scale allows a direct counting of the number of walls inside the nanostructure. The effect is then used to measure changes in the magnetic configuration of submicron stripes under application of a magnetic field.

Anisotropy of domain wall resistance

The resistive effect of domain walls in FePd films with perpendicular anisotropy was studied experimentally as a function of field and temperature. The films were grown directly on MgO substrates, which induces an unusual virgin magnetic configuration composed of 60 nm wide parallel stripe domains. This allowed us to carry out the first measurements of the anisotropy of domain wall resistivity in the two configurations of current perpendicular and parallel to the walls. At 18 K, we find 8.2% and 1.3% for the domain wall magnetoresistance normalized to the wall width (8 nm) in these two respective configurations. These values are consistent with the predictions of Levy and Zhang.